MARKING A4 TRANSISTOR Search Results

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual Switching Diodes LBAV70WT1G FEATURE ƽSmall plastic SMD package. 3 ƽFor high-speed switching applications. ƽPb-Free Package is available. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LBAV70WT1G A4 3000/Tape&Reel

sot23 marking y5

Abstract: BZX84C18 FMMD914 FMMD6050 BZX84-C27 BAR99 MARKING W4 sot 23 C3V9 C5V1 c5v6
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION DIODES DIODES Device Type Device Type Device marking Device marking BAL99 E2 BZX84-C43 X6 BAR99 E3 BZX84-C47 X7 BAS16 A3 FMMD914 5D BAV70 A4 FMMD6050 5A BAV74 JA BAV99 A7 BAW56 A1 HD2A 5D HD3A

Contextual Info: UTC MMBT1015 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES *Collector-Emitter Voltage: BVCEO=-50V *Collector current up to 150mA *High Hfe linearity *Complement to MMBT1815 2 1 3 MARKING A4 SOT-113 1:EMITTER 2:BASE 3: COLLECTOR

Contextual Info: UTC MMBT1015 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES *Collector-Emitter Voltage: BVCEO=-50V *Collector current up to 150mA *High Hfe linearity *Complement to MMBT1815 2 1 3 MARKING A4 SOT-23 1:EMITTER 2:BASE 3: COLLECTOR

Contextual Info: UTC MMBT1015 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES *Collector-Emitter Voltage: BVCEO=-50V *Collector current up to 150mA *High Hfe linearity *Complement to MMBT1815 2 1 3 MARKING A4 SOT-113 1:EMITTER 2:BASE 3: COLLECTOR

MMBT1015

Abstract: marking a4 sot-23
Contextual Info: UTC MMBT1015 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES *Collector-Emitter Voltage: BVCEO=-50V *Collector current up to 150mA *High Hfe linearity *Complement to MBT1815 2 1 3 MARKING A4 SOT-23 1:EMITTER 2:BASE 3: COLLECTOR

DSAFG01

Contextual Info: DSAFG01 Tentative page Total pages DSAFG01 Silicon PNP epitaxial planar type For High-frequency Amplifier Marking Symbol A4 Package Code : ML3-N4-B Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)

DSA4G01

Contextual Info: DSA4G01 Tentative Total pages page DSA4G01 Silicon PNP epitaxial planar type For High-frequency Amplifier Marking Symbol A4 Package Code : NS-B1-B-B Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)

Contextual Info: DSA3G01 Silicon PNP epitaxial planar type Unit: mm For high-frequency amplification DSA9G01 in SSSMini3 type package • Features  High transition frequency fT  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant  Marking Symbol: A4

Contextual Info: DSA9G01 Silicon NPN epitaxial planar type For high-frequency amplification DSA5G01 in SSMini3 type package Unit: mm • Features  High transition frequency fT  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant  Marking Symbol: A4

Contextual Info: DSA5G01 Silicon PNP epitaxial planar type For high-frequency amplification DSA2G01 in SMini3 type package Unit: mm • Features  High transition frequency fT  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant  Marking Symbol: A4

Contextual Info: DSA2G01 Silicon PNP epitaxial planar type Unit: mm For high-frequency amplification • Features  High transition frequency fT  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant  Marking Symbol: A4  Packaging DSA2G01x0L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)

Contextual Info: EMA4 / UMA4N / EMB4 / UMB4N / UMB8N / FMA4A / IMB4A Transistors General purpose dual digital transistors EMA4 / UMA4N / EMB4 / UMB4N / UMB8N / FMA4A / IMB4A !Feature 1) Two DTA114T chips in a EMT or UMT or SMT package. !Equivalent circuits EMA4 / UMA4N (3)

DTA114T

Abstract: T110 T148
Contextual Info: EMA4 / UMA4N / EMB4 / UMB4N / UMB8N / FMA4A / IMB4A Transistors General purpose dual digital transistors EMA4 / UMA4N / EMB4 / UMB4N / UMB8N / FMA4A / IMB4A !Feature 1) Two DTA114T chips in a EMT or UMT or SMT package. !Equivalent circuits EMA4 / UMA4N (3)

TN3000

Abstract: MARKING A4 transistor MARKING T108 inverter ic marking H.A SMT6 T108 G7 marking Code marking tA2 marking a4 transistors
Contextual Info: UMA4N / UMB4N / UMB8N / FMA4A / IMB4A / IMB8A UMG4N / UMG7N / UMH4N / UMH8N / FMG4A / FMG7A / IMH4A / IMH8A Transistors I Digital Transistor Duai Digital Transistors for Inverter Driver UMA4N / UMB4N / UMB8N / FMA4A / IMB4A / IMB8A •Features 1 ) Two DTA114T transistors are housed in a UMT or SMT package.

Contextual Info: EMA4 / UMA4N / EMB4 / UMB4N / UMB8N / FMA4A / IMB4A Transistors General purpose dual digital transistors EMA4 / UMA4N / EMB4 / UMB4N / UMB8N / FMA4A / IMB4A !Feature 1) Two DTA114T chips in a EMT or UMT or SMT package. !Equivalent circuits EMA4 / UMA4N (3)

atk63

Abstract: 4N28 4n26 example circuit 4N26 4N25 applications optocoupler 4N25
Contextual Info: 4N25/ 4N26/ 4N27/ 4N28 VISHAY Vishay Telefun ken Y Optocoupler with Phototransistor Output Description The 4N25/ 4N26/ 4N27/ 4N28 consist of a photo­ transistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual-inline

CNY70

Abstract: sensor cny70 ir sensing circuit using CNY70
Contextual Info: CNY70 Vishay Telefunken Reflective Optical Sensor with Transistor Output Description The CNY70 has a compact construction where the emitting light source and the detector are arranged in the same direction to sense the presence of an object by using the reflective IR beam from the object.

CNY70

Abstract: sensor cny70 ir sensing circuit using CNY70 CNY70 DATASHEET
Contextual Info: CNY70 Vishay Semiconductors Reflective Optical Sensor with Transistor Output Description The CNY70 has a compact construction where the emitting light source and the detector are arranged in the same direction to sense the presence of an object by using the reflective IR beam from the object.

marking CJD

Abstract: A6 marking MRF947t1 marking 6B
Contextual Info: SC-70/SQT-323 Devices_ Maximum die size 20 mil x 20 mil CASE 419-02 RF Transistors Maximum Ratings Gain-Bandwldth NF @ <§ Device t f Gain @ Marking h Typ GHz lc mA Typ dB MHz Typ dB MHz A H B 8 8 8 15 15 30 2.1 2.1 2.0 1500 1500 1500 10.5 10.5

ir sensing circuit using CNY70

Abstract: sensor cny70
Contextual Info: CNY70 Vishay Semiconductors Reflective Optical Sensor with Transistor Output Description The CNY70 has a compact construction where the emitting light source and the detector are arranged in the same direction to sense the presence of an object by using the reflective IR beam from the object.

IC 4N35 circuit diagram

Abstract: 4N25GV
Contextual Info: 4N25 G V/ 4N35(G)V Series Vishay Telefunken Optocoupler with Phototransistor Output Description The 4N25(G)V/4N35(G)V series consists of a photo­ transistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package.

CNY65

Abstract: photo coupler 601 CNY64A u763 cny65a CNY64
Contextual Info: CNY64/ CNY65/ CNY66 V ISH A Y Vishay Telefunken ▼ Optocoupler with Phototransistor Output Description The CNY64/ CNY65/ CNY66 consist of a photo­ transistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic package. The single components are mounted in opposite oneanother, providing a distance between input and

Contextual Info: MJD31/31C NPN Epitaxial Silicon Transistor Features • • • • • General Purpose Amplifier Low Speed Switching Applications Load Formed for Surface Mount Application No Suffix Straight Lead (I-PAK, “- I” Suffix) Electrically Similar to Popular TIP31 and TIP31C