MARKING A1 SOT23 Search Results

sod-23

Abstract: diode sod23 SOD 23 marking a7 SOD23 marking A4 marking A1 diode marking a4 MARKING A4 transistor SILICON SWITCHING DIODE
Contextual Info: BAV70 SWITCHING DIODE PRODUCT SUMMARY SOT-23 SOD-23 Plastic-Encapsulate Diodes FEATURES Fast Switching Speed For General Purpose Switching Applications High Conductance BAW56 Marking: A1 BAV70 Marking: A4 BAV99 Marking: A7 Pb-free; RoHS-compliant MAXIMUM RATINGS @TA=25°C

diode 4148

Abstract: DIODE-4148 A4 marking diode diode MARKING CODE 5d marking A4 marking A7 marking codes sot-23 A4 4148CA 4148SE diode 4148 sot-23
Contextual Info: MMBD4148 / SE / CC / CA SURFACE MOUNT SWITCHING DIODE 4148 4148SE 3 1 4148CC 3 3 2 1 1 2 2 4148CA 3 1 MMBD4148 Marking Code: 5D MMBD4148SE Marking Code: A7 MMBD4148CC Marking Code: A4 MMBD4148CA Marking Code: A1 SOT-23 Plastic Package 2 Absolute Maximum Ratings Ta = 25 OC

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Diodes BAW56/BAV70/BAV99 SOT-23 SWITCHING DIODE FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance BAW56 Marking: A1 BAV70 Marking: A4

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Diodes BAW56/BAV70/BAV99 SOT-23 SWITCHING DIODE FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance BAW56 Marking: A1 BAV70 Marking: A4

marking a7

Abstract: marking a1 marking A4 BAV99 BAW56 A7 marking bav99 marking Diode BAV99 SOT23 A4 marking diode diode bav70
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Diodes BAW56/BAV70/BAV99 SOT-23 SWITCHING DIODE FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance BAW56 Marking: A1 BAV70 Marking: A4

sot23 marking y5

Abstract: BZX84C18 FMMD914 FMMD6050 BZX84-C27 BAR99 MARKING W4 sot 23 C3V9 C5V1 c5v6
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION DIODES DIODES Device Type Device Type Device marking Device marking BAL99 E2 BZX84-C43 X6 BAR99 E3 BZX84-C47 X7 BAS16 A3 FMMD914 5D BAV70 A4 FMMD6050 5A BAV74 JA BAV99 A7 BAW56 A1 HD2A 5D HD3A

BAW56 application note

Abstract: A1s sot23 BAW56 V6010 ta1504 A2 SOT23
Contextual Info: BAW56 Silicon Switching Diode Array 3
For high-speed switching applications
Common anode 2 1 VPS05161 3 1 2 EHA07006 Type Marking BAW56 A1s Pin Configuration 1 = C1 2 = C2 Package 3=A1/A2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage VR

BAV170

Contextual Info: BAV170 3 Silicon Low Leakage Diode Array
Low-leakage applications
Medium speed switching times 2
Common cathode 1 VPS05161 3 1 2 EHA07004 Type BAV170 Marking JXs Pin Configuration 1 = A1 2 = A2 3 = C1/2 Package SOT23 Maximum Ratings Parameter Symbol

BAV70

Contextual Info: BAV70 Silicon Switching Diode Array 3
For high-speed switching applications
Common cathode 2 1 VPS05161 3 1 2 EHA07004 Type Marking BAV70 A4s Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage

BAV99

Abstract: free pdf transistor a7s bav99 marking diode bav A2 SOT23
Contextual Info: BAV99 Silicon Switching Diode Array 3
For high-speed switching applications
Connected in series 2 1 VPS05161 3 1 2 EHA07005 Type Marking BAV99 A7s Pin Configuration 1 = A1 2 = C2 Package 3=C1/A2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage

s3s sot23

Abstract: BBY51
Contextual Info: BBY51 Silicon Tuning Diode 3
High Q hyperabrupt dual tuning diode
Designed for low tuning voltage operation
For VCO's in mobile communications equipment 2 1 Type Marking BBY51 S3s Pin Configuration 1 = A1 2 = A2 VPS05161 Package 3 = C1/2 SOT23 Maximum Ratings

BAV199

Abstract: marking jys jys diode
Contextual Info: BAV199 3 Silicon Low Leakage Diode Array
Low-leakage applications
Medium speed switching times 2
Connected in series 1 VPS05161 3 1 2 EHA07005 Type BAV199 Marking JYs Pin Configuration 1 = A1 2 = C2 Package 3 = C1/A2 SOT23 Maximum Ratings Parameter Symbol

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAW56 SWITCHING DIODES SOT-23 FEATURES Monolithic dual switching diode common anode 3 1 MARKING: A1 2 Maximum Ratings @TA=25℃ Parameter Symbol Peak Repetitive Peak reverse voltage

BAW156

Contextual Info: BAW156 3 Silicon Low Leakage Diode Array
Low-leakage applications
Medium speed switching times 2
Common anode 1 VPS05161 3 1 2 EHA07006 Type BAW156 Marking JZs Pin Configuration 1 = C1 2 = C2 3 = A1/2 Package SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage

"MARKING CODE A1"

Abstract: MMBD2835 MMBD2836 a1 sot-23
Contextual Info: MMBD2835, MMBD2836 Dual Switching Diodes Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance 3 1 2 Marking Code: A1 SOT-23 Plastic Package Applications • Ultra high speed switching application Absolute Maximum Ratings Ta = 25 OC

a1 sot-23

Abstract: "MARKING CODE A1" 1SS181 marking codes transistors a1 sot-23 marking code A1 marking 724 diode sot-23 marking code A1 SOT 23
Contextual Info: 1SS181 SILICON EPITAXIAL PLANAR DIODE Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance 3 1 2 Marking Code: A1 SOT-23 Plastic Package Applications • Ultra high speed switching application Absolute Maximum Ratings Ta = 25 OC

Contextual Info: BAR 66 Silicon PIN Diode Array 3
Surge protection device
Two PIN diodes, series configuration
Designed for surge overvoltage clamping in antiparallel connection 2 1 VPS05161 3 1 2 EHA07005 Type Marking BAR 66 PMs Pin Configuration 1 = A1 2 = C2 Package

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual Switching Diodes LBAW56WT1G z Pb-Free Package is Available. 3 DEVICE MARKING 1 LBAW56WT1G = A1 2 MAXIMUM RATINGS TA = 25°C CASE 419–04, STYLE 4 Rating Symbol Max Unit Reverse Voltag VR Forward Current Peak Forward Surge Current

BBY 52

Contextual Info: BBY 52 Silicon Tuning Diode 3 • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment 2 1 Type Marking BBY 52 S5s Pin Configuration 1 = A1 2 = A2 VPS05161 Package 3 = C1/2 SOT-23

BAW56

Contextual Info: BAW56 HIGH SPEED DOUBLE SWITCHING DIODE Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance 3 1 2 Marking Code: A1 SOT-23 Plastic Package Applications • Ultra high speed switching application Absolute Maximum Ratings Ta = 25 OC

Contextual Info: BGX 400 Silicon Switching Diodes Preliminary data 3
Switching applications
High breakdown voltage
Halfbridge rectifier 2 1 VPS05161 1 3 2 EHA07365 Type Marking BGX 400 GXs Pin Configuration 1=C1/A2 2=C2 Package 3=A1 SOT-23 Maximum Ratings Parameter Symbol

BBY53

Contextual Info: BBY53 3 Silicon Tuning Diode
High Q hyperabrupt tuning diode
Designed for low tuning voltage operation 2 for VCOs in mobile communications equipment
High ratio at low reverse voltage Type BBY53 Marking S7s 1 Pin Configuration 1 = A1 2 = A2 3 = C1/2

a1 sot-23

Contextual Info: BGX 400 Silicon Switching Diodes 3
Switching applications
High breakdown voltage
Halfbridge rectifier 2 1 1 3 VPS05161 2 EHA07365 Type Marking BGX 400 GXs Pin Configuration 1=C1/A2 2=C2 Package 3=A1 SOT-23 Maximum Ratings Parameter Symbol Diode reverse voltage

baw156

Contextual Info: BAW 156 Silicon Low Leakage Diode Array 3 • Low-leakage applications • Medium speed switching times • Common anode 2 1 VPS05161 3 1 2 EHA07006 Type Marking BAW 156 JZs Pin Configuration 1 = C1 2 = C2 Package 3 = A1/2 SOT-23 Maximum Ratings Parameter