MARKING 9L Search Results

CMSH3-40

Abstract: CMPS5064 CMPD1001A marking db6 BCW71 AG marking 1FF MARKING CODE 8Y marking code k9 MARKING CODE 9k 6K MARKING CODE
Contextual Info: Marking Codes Marking Code Part Number Marking Code Part Number Marking Code Part Number 02D CMPS5064 5G BC808.40 91E CMPZ4706 1A BC846A 6A BC817.16 91F CMPZ4707 1B BC846B 6B BC817.25 91G CMPZ4708 1E BC847A 6B CMPF5484 91H CMPZ4709 1F BC847B 6B1 CMPF5485 91J

A09 N03 MOSFET

Abstract: marking B3A sot23-5 t7G SOT23-6 marking H2A sot-23 ADM2004 marking moy sot-23 A06 N03 MOSFET SOT23-5 D2Q M05 SOT-23 M2A MARKING SOT-23
Contextual Info: Tiny Part Number Cross Reference Package Marking Model Function Package Description Package Marking Model Function Package Description 0Axx 0Bxx 2A0A 2B0A 2C0A 3A0A 3B0A 3C0A 4A0A 4B0A 4C0A 5A0A 5B0A 5C0A 9Jxx 9Lxx 9Mxx 9Rxx 9Sxx 9Txx 9Zxx A00 A01 A02 A04

Contextual Info: FMMTA42 SOT23 NPN Silicon planar high voltage transistor Device marking FMMTA42 - 3E Complementary types FMMTA92 Absolute maximum ratings Parameter Collector-base voltage Symbol VCBO FMMTA42 300 Unit V Collector-emitter voltage VCEO 300 V Emitter-base voltage

FMMTA42

Abstract: FMMTA92 TS16949 semiconductors 3E
Contextual Info: FMMTA42 SOT23 NPN Silicon planar high voltage transistor Device marking FMMTA42 - 3E Complementary types FMMTA92 Absolute maximum ratings Parameter Collector-base voltage Symbol VCBO FMMTA42 300 Unit V Collector-emitter voltage VCEO 300 V Emitter-base voltage

B-9220

Contextual Info: TECHNICAL DATA SHEET E M U I R404441121 TITLE: 1 W lGHZ BNC/m LTR.C COAXIAL TERMINATION DRAWING General tolerances: + /- 0.5 mm Without marking ELECTRICAL CHARACTERISTICS -FRE-GUENCY RANGE -IMPEDANCE DC RESISTANCE AVERAGE POWER HANDLING PEAK POWER HANDLING

marking code g1s

Abstract: marking g1s marking G2s
Contextual Info: SIEMENS BF 2030W Silicon N-Channel MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V ESD: Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code

design ideas

Abstract: ZHCS400 TS16949
Contextual Info: ZHCS400 SOD323 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT” FEATURES PINOUT - TOP VIEW • Low VF SOD323 • High current capability • Miniature surface mount package APPLICATIONS • DC - DC converters • Mobile telecomms • PCMCIA DEVICE MARKING

SOT89 52 10A

Abstract: FCX495 TS16949 marking N95
Contextual Info: FCX495 SOT89 NPN silicon planar high voltage transistor Features • 150 Volt VCEO • 1 Amp continuous current E C C Device marking B N95 Pinout - top view Absolute maximum ratings Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage

Contextual Info: FCX593 SOT89 Silicon planar high voltage transistor Complementary part number - FMMT493 C Device marking - P93 B E E C C B Pinout - top view Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage VCBO -120 V Collector-emitter voltage VCEO

SOT89 52 10A

Abstract: Marking P93 sot89 FCX593 FMMT493 TS16949
Contextual Info: FCX593 SOT89 Silicon planar high voltage transistor Complementary part number - FMMT493 C Device marking - P93 B E E C C B Pinout - top view Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage VCBO -120 V Collector-emitter voltage VCEO

FMMT497

Abstract: FMMT597 TS16949
Contextual Info: FMMT497 SOT23 NPN silicon planar high voltage high performance transistor Complementary part number - FMMT597 C Device marking - 497 B E E C B Pinout - top view Absolute maximum ratings Parameter Symbol Value Unit Collector-base voltage VCBO 300 V Collector-emitter voltage

FMMT597

Abstract: FMMT497 TS16949
Contextual Info: FMMT497 SOT23 NPN silicon planar high voltage high performance transistor Complementary part number - FMMT597 C Device marking - 497 B E E C B Pinout - top view Absolute maximum ratings Parameter Symbol Value Unit Collector-base voltage VCBO 300 V Collector-emitter voltage

pnp transistor 1000v

Abstract: TS665 FMMT596 FMMT596TA TS16949 PNP 1000V 100a
Contextual Info: FMMT596 SOT 23 PNP silicon planar high voltage transistor Ordering information Device Reel size inches Tape width (mm Quantity per reel 7 8 3,000 FMMT596TA Device marking C E 596 C B B Pinout - top view E Absolute maximum ratings Parameter Symbol Value Unit

Q1205

Abstract: ss92 BSS92 transistor sS92 siemens ss92
Contextual Info: SIEMENS BSS92 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • ^GS th = -0.8.-2.0 V Type b -0.15 A BSS92 ^DS -240 V Type BSS92 BSS92 BSS 92 Ordering Code Q62702-S497 Q62702-S633 Q62702-S502 flDS(on) 20 a Package Marking

Contextual Info: Sil 901 DL_ Vishay Siliconix New Product P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS(V) r D S (on) ( Q ) Id (mA) 3.8 e VGS = -4 .5 V -1 8 0 5.0 0 V GS = - 2 5 V -1 0 0 -2 0 SOT-363 SC-70 (6-Leads) S, [ 7 Gn [ F nr Marking Code

Contextual Info: BSS 7728 In fin e o n technologies SIPMOS Small-Signal Transistor b • N channel 7 y SX/N. • Enhancement mode • '|/GS(tti = 1-°—2.5V 1 Pin 1 VPS05557 Pin 2 G Pin 3 S Type Vds fe f lDS(on) Package Marking BSS 7728 60 V 0.15 A 7.5 £1 SOT-23 sSJ

MM486

Abstract: MARKING code VG
Contextual Info: S IE M E N S SIPMOS Small-Signal Transistor BSS 145 Prelim inary D ata = 65 V = 0.22 A ^ O SIon = 3 - 5 ß VDS lD • N channel • Enhancem ent m ode • Package: S O T -2 3 ') Type Marking Ordering code for version in bulk Ordering code for version on 8-mm tape

Contextual Info: ADVANCE M T9LD T 272(X)(S) 2 MEG X 72 DRAM M OD ULE I^ IIC R O N DRAM B a / \ r M i i M U D U L W W 2 MEG x 72 rC 16 MEGABYTE, ECC, 3.3V, OPTIONAL SELF REFRESH, FAST PAGE OR EDO PAGE MODE FEATURES OPTIONS MARKING • T im in g 60n s access 70n s access -6

BZX 48c 6v8

Abstract: PT2369 code Cj5 CMXZ11VTO 7006S
Contextual Info: M arking Codes Marking Code Part Number 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1RC 2AC 2B 2C 2C A 2F 2FC 2G 2 PC 2Q C 2P 3A 3AE 3B 3CE 3E 3F 3G 3J 3K 3L 3P 3SE 4A 4B 4C 4E 4F 4G 4P

LLP1713-9L

Contextual Info: VEMI45LA-HNH Vishay Semiconductors 4-Channel LCR - EMI-Filter with ESD-Protection Features • • • • • • • • Ultra compact LLP1713-9L package Low package profile of 0.6 mm 4-channel LC EMI-filter Low leakage current Line inductance LS = 10 nH

LLP1713-9L

Abstract: VESD05A8C-HNH-GS08
Contextual Info: VESD05A8C-HNH Vishay Semiconductors 8-Line ESD-Protection Diode Array in LLP1713-9L Features • • • • • • Ultra compact LLP1713-9L package Low package profile < 0.6 mm 8-line ESD-protection Low leakage current IR < 0.1 µA Low load capacitance CD = 10 pF

LLP1713-9L

Abstract: VEMI45AC-HNH
Contextual Info: VEMI45AC-HNH Vishay Semiconductors 4-Channel EMI-Filter with ESD-Protection Features • • • • • • • Ultra compact LLP1713-9L package Low package profile of 0.6 mm 4-channel EMI-filter Low leakage current Line resistance RS = 100 Ω Typical cut off frequency f3dB = 240 MHz

LLP1713-9L

Abstract: VEMI45AA-HNH
Contextual Info: VEMI45AA-HNH Vishay Semiconductors 4-Channel EMI-Filter with ESD-Protection Features • • • • • • • Ultra compact LLP1713-9L package Low package profile of 0.6 mm 4-channel EMI-filter Low leakage current Line resistance RS = 100 Ω Typical cut off frequency f3dB = 100 MHz

Contextual Info: VESD05A8B-HNH Vishay Semiconductors 8-Line ESD-Protection Diode Array in LLP1713-9L Features • • • • • • Ultra compact LLP1713-9L package Low package profile < 0.6 mm 8-line ESD-protection Low leakage current IR < 0.5 µA Low load capacitance CD = 20 pF