MARKING 9CA Search Results

2N3904

Abstract: MMBA812M7 2N3906 TMPT4403 BC818-25 BC818-40 BC848A BC848B BC848C KST06
Contextual Info: Surface Mount General Purpose Transistors hFE Part No., Marking Code and Polarity VC E O NPN BC848A BC848B BC848C BC818-16 BC818-25 BC818-40 MMBTA06 TMPTA06 KST06 MMBTA05 KST05 MMBT100 MMBT2222A TMPT2222A KST2222A MMBT4401 TMPT4401 KST4401 MMBT3903 KST3903

pnp transistor A1 sot-23

Abstract: FAIRCHILD SOT-23 MARK 30 MARKING 3E SOT23-3 Cross Reference sot23 SOT-23 Product Code Top Mark PC mark code 14 SOT-23 16 TRANSISTOR sot-23 3B SOT23-3 FAIRCHILD SOT-23 MARK PC 9aa marking
Contextual Info: BC856/857/858/859/860 BC856/857/858/859/860 Switching and Amplifier Applications • Suitable for automatic insertion in thick and thin-film circuits • Low Noise: BC859, BC860 • Complement to BC846 . BC850 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector

Transistor Equivalent list

Contextual Info: Formosa MS Dual NPN Epitaxial Planar Transistor FMBT2222ADW1 & FMBT2222ADW2 List List. 1 Package outline. 2

MARKING 9AB

Abstract: BC856 9aa marking 9AB TRANSISTOR sot 23 mark 9CB 9EA marking marking 9aa MARKING 9CA 860C BC846
Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC856/857/858/859/860 SWITCHING AND AMPLIFIER APPLICATIONS SOT-23 • Sutable for automatic insertion in thick and thin-film circuits • LOW NOISE: BC859, BC860 • Complement to BC846 . BC850  ABSOLUTE MAXIMUM RATINGS TA=25

Contextual Info: SSC2139 1.55A CMOS Low Dropout Voltage Regulator Elektronische Bauelemente RoHS Compliant Product Description The SSC2139 positive,linear regulators feature low quiescent current 45µA typ. with low dropout voltage, making them ideal for battery applications. Output voltage are set at the factory and

GSC2139

Abstract: transistor 7686
Contextual Info: ISSUED DATE :2006/04/14 REVISED DATE : GSC2139 1 . 5 5 A C M O S L o w D r o p o u t Vo l t a g e R e g u l a t o r Description The GSC2139 of positive, linear regulators feature low ground current 45 A typ. with low dropout voltage, making them ideal for battery applications.

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC856/857/858/859/860 SWITCHING AND AMPLIFIER APPLICATIONS SOT-23 • Suitable for automatic insertion in thick and thin-film circuits • LOW NOISE: BC859, BC860 • Complement to BC846 . BC850 ABSOLUTE MAXIMUM RATINGS TA=25°C

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC856/857/858/859/860 SWITCHING AND AF AMPLIFIER APPLICATIONS • SUITABLE FOR AUTOMATIC INSERTION IN THICK AND THIN-FILM CIRCUITS • LOW NOISE: BC859, BC860 _ • Complement to BC846 . BC8S0 SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 25°C

SOT-23 MARK 9B

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC856/857/858/859/860 SWITCHING AND AMPLIFIER APPLICATIONS SOT-23 • Sutable for automatic insertion in thick and thin-film circuits . L O W NOISE: BC859, BC860 • Complement to BC846 . BC850 ABSOLUTE MAXIMUM RATINGS TA=25'C

MARKING 9AB

Abstract: 9aa marking ROA sot 23 BC846 BC850 BC856 BC859 BC860 859-C TRANSISTOR 9BB
Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC856/857/858/859/860 SWITCHING AND AMPLIFIER APPLICATIONS S O T-23 • S uitable fo r auto m atic insertion in th ick and thin-film circuits • LO W NOISE: BC859, BC860 • C om plem ent to BC846 . BC850 ABSOLUTE MAXIMUM RATINGS TA=25°C

MARKING 9AB

Abstract: 9AB TRANSISTOR Code 9CB BC859 BC846 BC856 BC860 sot 23 mark 9CB
Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC856/857/858/859/860 SWITCHING AND AF AMPLIFIER APPLICATIONS • SUITABLE FOR AUTOMATIC INSERTION IN THICK AND THIN-FILM CIRCUITS • LOW NOISE: BC859, BC860 • Complement to BC846 . BC8S0 SO T -2 3 ABSOLUTE MAXIMUM RATINGS Ta=25°C

856B

Abstract: BC846 BC850 BC856 BC859 BC860 9aa marking TRANSISTOR 9BB
Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC856/857/858/859/860 SWITCHING AND AMPLIFIER APPLICATIONS SOT-23 • Suitable for automatic insertion in thick and thin-film circuits • LOW NOISE: BC859, BC860 • Complement to BC846 . BC850 ABSOLUTE MAXIMUM RATINGS TA=25°°C

resistor cross reference

Abstract: 503-0 Vitrohm 502 Vitrohm Phycomp 232270591001 power 4532M BC Z5U 1KV Phycom 23227046 Phycom RC22H 232270492007 10K 471
Contextual Info: Innovative Service Around the Globe Chip Capacitors www.yageo.com Chip Resistors + HF Products www.yageo.com GENERAL INFORMATION Part numbering system and ordering You can order components from this catalogue in two ways. Both ways give logistic and packing

HE6851

Abstract: HBC858
Contextual Info: HI-SINCERITY Spec. No. : HE6851 Issued Date : 1994.09.02 Revised Date : 2004.09.01 Page No. : 1/4 MICROELECTRONICS CORP. HBC858 PNP EPITAXIAL PLANAR TRANSISTOR Description The HBC858 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits.

fe marking code

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC856/857/858/859/860 SWITCHING AND AMPLIFIER APPLICATIONS S O T-23 • S uitable fo r auto m atic insertion in th ick and thin-film circuits • LOW NOISE: BC859, BC860 • C om plem ent to BC846 . BC850 ABSOLUTE MAXIMUM RATINGS TA=25°C

BC859

Abstract: BC846 BC850 BC856 BC860
Contextual Info: BC856/857/858/859/860 BC856/857/858/859/860 Switching and Amplifier Applications • Suitable for automatic insertion in thick and thin-film circuits • Low Noise: BC859, BC860 • Complement to BC846 . BC850 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector

tocos HR

Abstract: KTM 7
Contextual Info: 0 @% TOC=OS TOCOS AMERICA JNC. Specifications m!I $ 6 Model Carbon film variable resistor @P+ktk#%F Customer Specification Number @Pkt#@i% Customer Part Name 53P+kEDZ%F Customer Part Number *;f.fR?% TOCOS Part Name %+ktM%5 TOCOS Specification Number P ~

Contextual Info: PJB24N10 100V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@30A=24mΩ • Low On Resistance • Excellent Gate Charge x RDS(ON) Product ( FOM ) • Fully Characterized Avalanche Voltage and Current • Specially Designed for AC Adapter, High-Frequency Switch

Contextual Info: PJP24N10 / PJF24N10 TO-220AB / ITO-220AB 100V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@30A=24mΩ TO-220AB ITO-220AB • Low On Resistance • Excellent Gate Charge x RDS(ON) Product ( FOM ) • Fully Characterized Avalanche Voltage and Current

Contextual Info: UG64U6400L8DU Data sheets can be downloaded at www.unigen.com Solutions For A Real Time World TM 512M Bytes 64M x 64 bits SYNCHRONOUS DRAM MODULE 240 Pin DDR3 SDRAM Unbuffered DIMM based on 8 pcs 64M x 8 DDR3 SDRAM 8K Refresh FEATURES SPECIFICATIONS • Density: 512MB

Contextual Info: PJN1N60D TO-92 600V N-Channel Enhancement Mode MOSFET FEATURES • 0.5A, 600V, RDS ON =15Ω@VGS=10V, ID=0.5A • • • • • • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS

MV TRANSISTOR SOT23

Contextual Info: BC856- BC860 tm PNP Epitaxial Silicon Transistor Features • Switching and Amplifier Applications • Suitable for automatic insertionin thick and thin-film circuits • Low Noise: BC859, BC860 • Complement to BC846 . BC850 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector

Contextual Info: PJ04N03D 25V N-Channel Enhancement Mode Field Effect Transistor TO-252 FEATURES • RDS ON ,VGS@10V,I DS@30A=4mΩ • RDS(ON),VGS@5.0V,I DS@24A=6mΩ • Advanced trench process technology • High Density Cell Design For Uitra Low On-Resistance • Specially Designed for DC/DC Converters and Motor Drivers

BC857CMTF

Abstract: PNP Epitaxial Silicon Transistor sot-23 BC857BMTF BC857AMTF BC859BMTF marking 25 SOT-23 ref IC BC860 bc856bmtf BC846 BC850
Contextual Info: BC856- BC860 tm PNP Epitaxial Silicon Transistor Features • Switching and Amplifier Applications • Suitable for automatic insertion in thick and thin-film circuits 3 • Low Noise: BC859, BC860 • Complement to BC846 . BC850 2 1 SOT-23 1. Base 2. Emitter 3. Collector