Elpida LPDDR2 Memory
Abstract: MT46H32M32LF MT46H64M16LF
Contextual Info: 1Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H64M16LF – 16 Meg x 16 x 4 Banks MT46H32M32LF – 8 Meg x 32 x 4 Banks Features Options Marking • VDD/VDDQ – 1.8V/1.8V • Configuration – 64 Meg x 16 16 Meg x 16 x 4 banks
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mt46h64m16lfmt46h32m32lf09005aef82ce3074elpida lpddr2 memory |
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ELPIDA mobile dram LPDDR2
Abstract: LPDDR2 SDRAM micron infineon power cycling
Contextual Info: 256Mb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H16M16LF – 4 Meg x 16 x 4 Banks MT46H8M32LF – 2 Meg x 32 x 4 Banks Features Marking Options • VDD/VDDQ – 1.8V/1.8V • Configuration – 16 Meg x 16 4 Meg x 16 x 4 banks – 8 Meg x 32 (2 Meg x 32 x 4
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256mbmt46h16m16lfmt46h8m32lf09005aef834bf85b+3elpida mobile dram lpddr2lpddr2 sdram microninfineon power cycling
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transistor D613 equivalent
Abstract: TRANSISTOR D613 41e hall sensor transistor marking 9D transistor bc 567
Contextual Info: 123455678 LIN-Slave for relay and DC motor control 9ABCDEAF8 Microcontroller: MLX16x8 RISC CPU o o o 16 bit RISC-CPU Co-processor for fast multiplication and division In-circuit debug and emulation Memories o o o 32 kByte Flash with ECC 2 kByte RAM 384 Byte EEPROM with ECC for customer purpose
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mlx16x8j2602iso/ts16949iso14001+6mlx81150transistor d613 equivalenttransistor d61341e hall sensortransistor marking 9dtransistor bc 567
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f1f9
Contextual Info: 123456781 12345674869AB4C9DEFB469F46649B47941 9ABCADEFEADE A 6 !"#34678"E$%&&&%444%9' (6) !"#346783E$%&&&%444%9' (6) !"#34678"E$%&&&%444%9# (6) !"#346783E$%&&&%444%9# CCAACBC (5) "1(%D4*$115+4*$)1 31(%D4*$1156+*$)
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12345674869ab4c9defb4346783e0f1a1219aaba165f+3ba1959abc144d1f1f9
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pnp transistor A1 sot-23
Abstract: FAIRCHILD SOT-23 MARK 30 MARKING 3E SOT23-3 Cross Reference sot23 SOT-23 Product Code Top Mark PC mark code 14 SOT-23 16 TRANSISTOR sot-23 3B SOT23-3 FAIRCHILD SOT-23 MARK PC 9aa marking
Contextual Info: BC856/857/858/859/860 BC856/857/858/859/860 Switching and Amplifier Applications • Suitable for automatic insertion in thick and thin-film circuits • Low Noise: BC859, BC860 • Complement to BC846 . BC850 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector
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bc856/857/858/859/860bc859bc860bc846+15bc850ot-23bc856bc857/860bc858/859pnp transistor a1 sot-23fairchild sot-23 mark 30marking 3e sot23-3cross reference sot23sot-23 product code top mark pcmark code 14 sot-2316 transistor sot-233b sot23-3fairchild sot-23 mark pc9aa marking
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Datasheet AGLN060
Abstract: agl030 QN68 AGLN010 CS81 VQ100 AGLN125 QN48 nano technology AGLN060 actel part markings
Contextual Info: Advance v0.7 IGLOO nano Low-Power Flash FPGAs with Flash*Freeze Technology Features and Benefits Advanced I/Os • 1.2 V, 1.5 V, 1.8 V, 2.5 V, and 3.3 V Mixed-Voltage Operation • Bank-Selectable I/O Voltages—up to 4 Banks per Chip • Single-Ended I/O Standards: LVTTL, LVCMOS
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jesd8-12datasheet agln060agl030 qn68agln010+7cs81vq100agln125qn48nano technologyagln060actel part markings
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QN48
Abstract: AGLN010
Contextual Info: Advance v0.8 IGLOO nano Low-Power Flash FPGAs with Flash*Freeze Technology Features and Benefits High-Performance Routing Hierarchy Low Power Advanced I/Os • Segmented, Hierarchical Routing and Clock Structure • • • • • nanoPower Consumption—Industry’s Lowest Power
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actel part markings
Abstract: QN48 Thin Quad flat package A3PN015 QN68 nano high side switch ProASIC3 VQ100 Actel igloo AGL030V5-UCG81 actel die run marking
Contextual Info: Advance v0.5 ProASIC®3 nano Flash FPGAs Features and Benefits Advanced I/Os Wide Range of Features • 10 k to 250 k System Gates • Up to 36 kbits of True Dual-Port SRAM • Up to 71 User I/Os Reprogrammable Flash Technology • • • • 130-nm, 7-Layer Metal 6 Copper , Flash-Based CMOS Process
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130-nm128-bitactel part markingsqn48+8thin quad flat package a3pn015qn68nano high side switchproasic3vq100actel iglooagl030v5-ucg81actel die run marking
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actel part markings
Abstract: QN48 actel die run marking QN68 qfn132 ProASIC3 VQ100
Contextual Info: Advance v0.4 ProASIC®3 nano Flash FPGAs Features and Benefits Advanced I/Os Wide Range of Features • 10 k to 250 k System Gates • Up to 36 kbits of True Dual-Port SRAM • Up to 71 User I/Os Reprogrammable Flash Technology • • • • 130-nm, 7-Layer Metal 6 Copper , Flash-Based CMOS Process
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130-nm128-bitactel part markingsqn48+5actel die run markingqn68qfn132proasic3vq100
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Contextual Info: Axial Leads/SpinGuard GENERAL DESCRIPTION L.D. AVX SA Series Conformally Coated Axial Leaded MLC Temperature Coefficients: C0G NP0 , X7R , Z5U 50, 100, 200 Volts Case Material: Epoxy (Flame Retardant to UL Bulletin 492, Par. 280) Lead Material: Solderable
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SA305E474ZAA
Abstract: marking code 54 SA305C274KAA SA05 SA055E104ZAA SA10 SA102A1R0DAA SA105E104ZAA SA11 SA20
Contextual Info: Axial Leads/SpinGuard GENERAL DESCRIPTION L.D. AVX SA Series Conformally Coated Axial Leaded MLC Temperature Coefficients: C0G NP0 , X7R , Z5U 50, 100, 200 Volts Case Material: Epoxy (Flame Retardant to UL Bulletin 492, Par. 280) Lead Material: Solderable
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113mm255mmsa305e474zaamarking code 54+8sa305c274kaasa05sa055e104zaasa10sa102a1r0daasa105e104zaasa11sa20
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BC857
Abstract: 9AB TRANSISTOR MARKING 9AB 9aa marking BC856 856A 856B BC846 BC847 B 856B
Contextual Info: BC856/BC857 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES *Suitable for automatic insertion in thick and thin-film circuits *Complement to BC846 / BC847 2 1 3 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise noted
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bc856/bc857bc846bc847ot-23+10bc856bc857noted-300qw-r206-0289ab transistormarking 9ab9aa marking856a856bb 856b
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MARKING 9AB
Abstract: BC856 9aa marking 9AB TRANSISTOR sot 23 mark 9CB 9EA marking marking 9aa MARKING 9CA 860C BC846
Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC856/857/858/859/860 SWITCHING AND AMPLIFIER APPLICATIONS SOT-23 • Sutable for automatic insertion in thick and thin-film circuits • LOW NOISE: BC859, BC860 • Complement to BC846 . BC850 ABSOLUTE MAXIMUM RATINGS TA=25
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bc856/857/858/859/860ot-23bc859bc860+13bc846bc850bc856bc857/860bc858/859marking 9ab9aa marking9ab transistorsot 23 mark 9cb9ea markingmarking 9aamarking 9ca860c
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QFN48 5x5 package
Contextual Info: MLX81205/07/10/15 123456278 Microcontroller: MLX16-FX RISC CPU o o o o 16 bit RISC CPU with 20DMIPS and Power-Saving-Modes Co-processor for fast multiplication and division Flash and EEPROM memory with EEC In-circuit debug and emulation Supported bus interfaces:
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ACTEL CCGA 624 mechanical
Abstract: CCGA ACTEL CCGA 1152 mechanical CG1152 pogo pin cleaning CGS624 a440 ceramic actel package mechanical drawing RTAX2000 90Pb 10Sn solder paste
Contextual Info: Application Note AC190 Ceramic Column Grid Array Introduction Ceramic Column Grid Array CCGA packages are becoming increasingly popular as an alternative to Ceramic Ball Grid Array (CBGA) packages for applications requiring very high-density interconnections
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ac190624-pincg624cg1152+101272-pinactel ccga 624 mechanicalccgaactel ccga 1152 mechanicalpogo pin cleaningcgs624a440 ceramicactel package mechanical drawingrtax200090pb 10sn solder paste
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MARKING CODE 028 sot 23
Abstract: 9aa marking bc857 9AB TRANSISTOR
Contextual Info: BC856/BC857 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES *Suitable for automatic insertion in thick and thin-film circuits *Complement to BC846 / BC847 2 1 3 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise noted
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bc856/bc857bc846bc847ot-23+6bc856bc857qw-r206-028marking code 028 sot 239aa marking9ab transistor
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Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC856/857/858/859/860 SWITCHING AND AMPLIFIER APPLICATIONS SOT-23 • Suitable for automatic insertion in thick and thin-film circuits • LOW NOISE: BC859, BC860 • Complement to BC846 . BC850 ABSOLUTE MAXIMUM RATINGS TA=25°C
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bc856/857/858/859/860ot-23bc859bc860+5bc846bc850bc856bc857/860bc858/859
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SEMIKRON Application Note AN-7006
Contextual Info: SKYPER 32 R UL Absolute Maximum Ratings SKYPER IGBT Driver Core Symbol Conditions Vs Supply voltage primary ViH Input signal voltage HIGH UL recognized according UL 508C UL report reference E242581 Two output channels Integrated potential free power supply
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104k 630 capacitor
Abstract: TT 2206 transistor tt 2206 substitute MARKING CODE ZAA diode cc 3053 HP 1003 WA Transistor TT 2246 transistor tt 2206 M.A ENGLISH DATE SHEET 2011 mx 2262
Contextual Info: A KYOCERA GROUP COMPANY AVX Multilayer Ceramic Leaded Capacitors NOTICE: Specifications are subject to change without notice. Contact your nearest AVX Sales Office for the latest specifications. All statements, information and data given herein are believed to be accurate and reliable, but are presented without guarantee,
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s-mclc20m199-c104k 630 capacitortt 2206transistor tt 2206 substitute+7marking code zaadiode cc 3053hp 1003 watransistor tt 2246transistor tt 2206m.a english date sheet 2011mx 2262
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Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC856/857/858/859/860 SWITCHING AND AF AMPLIFIER APPLICATIONS • SUITABLE FOR AUTOMATIC INSERTION IN THICK AND THIN-FILM CIRCUITS • LOW NOISE: BC859, BC860 _ • Complement to BC846 . BC8S0 SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 25°C
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bc856/857/858/859/860bc859bc860bc846+4ot-23bc856bc857/860bc858/859
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transistor tt 2206
Abstract: MX 0541 tt 2246 104k 630 capacitor TT 2206 y5v 104z sec capacitor Transistor TT 2246 a5e 104 transistor tt 2206 substitute diode cc 3053
Contextual Info: A KYOCERA GROUP COMPANY AVX Multilayer Ceramic Leaded Capacitors NOTICE: Specifications are subject to change without notice. Contact your nearest AVX Sales Office for the latest specifications. All statements, information and data given herein are believed to be accurate and reliable, but are presented without guarantee,
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s-mclc20m199-ctransistor tt 2206mx 0541tt 2246+7104k 630 capacitortt 2206y5v 104z sec capacitortransistor tt 2246a5e 104transistor tt 2206 substitutediode cc 3053
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A1232
Abstract: a5e 104 3573 1231 transistor tt 2206 substitute TT 2206 transistor tt 2206 tt 2246 transistor equivalent book FOR D 1047 minitan MIL-C-11015
Contextual Info: Index The Capacitor . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-9 Dielectrics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10-13 Radial Leads SKYCAPS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14-19 CERALAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20-23
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s-mclc20m199-ca1232a5e 1043573 1231+7transistor tt 2206 substitutett 2206transistor tt 2206tt 2246transistor equivalent book for d 1047minitanmil-c-11015
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SOT-23 MARK 9B
Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC856/857/858/859/860 SWITCHING AND AMPLIFIER APPLICATIONS SOT-23 • Sutable for automatic insertion in thick and thin-film circuits . L O W NOISE: BC859, BC860 • Complement to BC846 . BC850 ABSOLUTE MAXIMUM RATINGS TA=25'C
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bc856/857/858/859/860bc859bc860bc846+6bc850ot-23bc856bc857/860bc858/859sot-23 mark 9b
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MARKING 9AB
Abstract: 9aa marking ROA sot 23 BC846 BC850 BC856 BC859 BC860 859-C TRANSISTOR 9BB
Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC856/857/858/859/860 SWITCHING AND AMPLIFIER APPLICATIONS S O T-23 • S uitable fo r auto m atic insertion in th ick and thin-film circuits • LO W NOISE: BC859, BC860 • C om plem ent to BC846 . BC850 ABSOLUTE MAXIMUM RATINGS TA=25°C
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bc856/857/858/859/860bc859bc860bc846+9bc850bc856bc857/860bc858/859marking 9ab9aa markingroa sot 23859-ctransistor 9bb
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