MARKING 8A0 Search Results

Contextual Info: 外形寸法図・参考パターン寸法 ●USP-8A01 Unit: mm •外形寸法図 ■参考パターンレイアウト 参考メタルマスクデザイン テーピング仕様 ●USP-8A01 リール Unit: mm 3000 個/リール ■テーピング仕様 R タイプ：標準挿入

Contextual Info: 管理計画 USP-8A01 CONTROL PLAN (USP-8A01) ﾄﾚｯｸｽ・ｾﾐｺﾝﾀﾞｸﾀｰ株式会社 代表例 TOREX SEMICONDUCTOR LTD. 工程記号 No. 工程名 Flow Process 1 ｳｴﾊ受入 ◇ Wafer incoming 2 酸化 ○ Oxide 3 酸化膜ﾁｪｯｸ

marking SMD crystal CODES

Abstract: Q 8,0-JXG75P2-12-30/100-T3-LF JTX310 Q25,0-SMU4-18-30/50-FU-LF JAUCH Quartz Crystals 16 Mhz Q8.0-SMU4-18-30/50-T1-LF
Contextual Info: F REQUENCY C ONTROL P RODUCTS JAUCH QUARTZ CRYSTALS individual working copy 03/11/14 THE SPECIALIST FOR FREQUENCY CONTROL PRODUCTS The Specialist for frequency control products Worldwide Presence expert advice by quartz crystal specialists Technical Customer Support

IVT2200K

Contextual Info: IT2200K -SMD Temperature Compensated Crystal Oscillators - SMD TCXO using analogue ASIC for compensation and an optional Enable/Disable pin for efficient power management. - Product description -The I V T2200K employs an analogue ASIC for the oscillator and a high order temperature

SMQ JAUCH

Abstract: JXG84P2 8A000
Contextual Info: SMD Quartz Crystal • JXG84P2 2 Pad Version · 8.0 x 4.5 mm RoHS • automotive temperature range available ■ reflow soldering temperature: 260 °C max. ■ ceramic package actual size General Data 2002/95/EC RoHS compliant Pb free: pins / pads ESR series resistance Rs

8a000

Abstract: Jauch Quartz JXG75P4
Contextual Info: SMD Quartz Crystal • JXG75P4 4 Pad Version · 7.0 x 5.0 mm • ■ ■ ■ actual size automotive temperature range available high mechanical reliability type available reflow soldering temperature: 260 °C max. ceramic package RoHS 2002/95/EC RoHS compliant

JXG75P2

Contextual Info: SMD Quartz Crystal • JXG75P2 2 Pad Version · 7.0 x 5.0 mm • ■ ■ ■ actual size glass sealed ceramic package extended temperature ranges available high mechanical reliability type available for automotive type, see automotive datasheet RoHS 2002/95/EC

JXG75P4

Contextual Info: SMD Quartz Crystal • JXG75P4 4 Pad Version · 7.0 x 5.0 mm • ■ ■ ■ actual size glass sealed ceramic package extended temperature ranges available high mechanical reliability type available for automotive type, see automotive datasheet RoHS 2002/95/EC

JXG75P2

Contextual Info: Quartz Crystal • JXE• JXG75P2 63 Automotive SMD Crystal 2 Pad Version · 7.0 x 5.0 mm • ■ ■ ■ actual size glass sealed ceramic package all versions are AEC-Q200 qualified HMR version with extended shock & vibration immunity RKE version withstands 100x drop test from 150 cm

JXE75-1

Abstract: JXE 32 JXE75/2 JXE75 SMQ Series quartz 12 MHz SMQ JAUCH
Contextual Info: JXE 75 Quartz Crystal • JXE75 Surface Mount Quartz Crystal actual size Features • RoHS compliant ■ ceramic/ceramic package General Data ESR series resistance Rs type JXE75 frequency range frequency vibration ESR max. ESR typ. 6.00 ~ 60.0 MHz ( fund. AT-cut )

JXG75P4

Contextual Info: Quartz Crystal • JXE• JXG75P4 63 Automotive SMD Crystal 4 Pad Version · 7.0 x 5.0 mm • ■ ■ ■ actual size glass sealed ceramic package all versions are AEC-Q200 qualified HMR version with extended shock & vibration immunity RKE version withstands 100x drop test from 150 cm

2SK2391

Contextual Info: TO SHIBA 2SK2391 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2391 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS r 4V Gate Drive

8XC251SB

Abstract: 8XC251 8XC251SA 8XC251SP 8XC251SQ 272617 intel DOC 272795 A5028-02
Contextual Info: 8XC251Sx 8XC251SA, SB, SP, SQ SPECIFICATION UPDATE Release Date: September, 1996 Order Number 272836-003 The 8XC251Sx may contain design defects or errors known as errata. Characterized errata that may cause the 8XC251Sx’s behavior to deviate from published specifications are documented in

A5028

Abstract: 8xC251SX 272617 8XC251 step 8XC251 8XC251SA 8XC251SB 8XC251SP 8XC251SQ intel DOC
Contextual Info: 8XC251Sx 8XC251SA, SB, SP, SQ SPECIFICATION UPDATE Release Date: July, 1997 Order Number: 272836-004 The 8XC251Sx may contain design defects or errors known as errata which may cause the 8XC251Sx to deviate from published specifications. Current characterized

8xC251SX

Abstract: 272617 intel MCS-251 8XC251SA 8XC251SB 8XC251SP 8XC251SQ
Contextual Info: 8xC251Sx 8XC251SA, SB, SP, SQ Specification Update August 1999 Notice: The 8xC251Sx may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Current characterized errata are documented in this specification update.

8XC251

Abstract: 8XC251SA 8XC251SB 8XC251SP 8XC251SQ 272617 272936 intel DOC
Contextual Info: 8XC251Sx 8XC251SA, SB, SP, SQ SPECIFICATION UPDATE Release Date: September, 1998 Order Number: 272836-006 Notice: The 8XC251Sx may contain design defects or errors known as errata. Characterized errata that may cause the 8XC251Sx’s behavior to deviate from

8xC251SX

Abstract: 8XC251SP 272617 87C251* errata 8XC251SA/SB/SP/SQ Embedded Microcontroller 8XC251SQ 8XC251 8XC251SA 8XC251SB intel DOC
Contextual Info: 8XC251Sx 8XC251SA, SB, SP, SQ SPECIFICATION UPDATE Release Date: December, 1998 Order Number: 272836-007 Notice: The 8XC251Sx may contain design defects or errors known as errata. Characterized errata that may cause the 8XC251Sx’s behavior to deviate from

Contextual Info: TPCA8A02-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type U-MOS V-H TPCA8A02-H High Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications Unit: mm 0.4±0.1 1.27 0.5±0.1

Contextual Info: TPCA8A01-H ＴOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type Ultra-High-Speed U-MOS Ⅲ TPCA8A01-H High Efficiency DC／DC Converter Applications Notebook PC Applications Portable Equipment Applications Unit: mm

8A02-H

Contextual Info: TPCA8A02-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type U-MOS V-H TPCA8A02-H High Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications Unit: mm 0.4±0.1 1.27 0.5±0.1

TPCA 8a04

Abstract: 8A04h TPCA8A04-H
Contextual Info: TPCA8A04-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type U-MOS V-H TPCA8A04-H High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications 0.5 ± 0.1 Small gate charge: QSW = 13.4 nC (typ.)

8A05

Contextual Info: TPCA8A05-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type U-MOS V-H TPCA8A05-H High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications 1.27 0.4 ± 0.1 8 • Low drain-source ON-resistance: RDS (ON) = 9.2 mΩ (typ.)

s29gl032m10tair

Contextual Info: S29GLxxxM MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology Datasheet PRELIMINARY Distinctive Characteristics

TPCC8A01-H

Contextual Info: TPCC8A01-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type U-MOS V-H TPCC8A01-H High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications • Unit: mm Built-in a Schottky barrier diode