MARKING 7T SOT Search Results

marking codes SOT23 SS

Abstract: marking 7T
Contextual Info: IIV C CMPT3904 NPN CMPT3906 PNP COMPLEMENTARY SILICON TRANSISTORS bvceo b v ebo VCE SAT VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE hFE r a l The C E NTRAL S E M IC O N D U C TO R CM P T3904, CM P T3906 types are co m p le m e n ta ry s ilico n tra n s is to rs

Contextual Info: LESHAN RADIO COMPANY, LTD. GENERAL PURPOES LUMH14NDW1T1 dual digital transistors 6 5 4 1 2 3 SC-88/SOT-363 3 (2) (1) R1 Q1 Q2 R1 MAXIMUM RATINGS (TA = 25°C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-base voltage Collector Current Collector power dissipation

s 8550 d

Abstract: s8550LT1 8550 sot-23 pnp SS8550LT1 SS8550
Contextual Info: MC C SOT-23 P la s tic -E n c a p s u la te T ra n s is to rs ^ ^ 1.BASE 2.EMITTER 3.COLLECTOR S S 8550LT 1 TR A N S IS TO R PNP 7T oi FEATURES '¿ r Power dissipation PCM: 0.625 W CTamb=25T ) Collector current ICM: -1.5 A Collector-base voltage V(BR)CBo:-40V

Contextual Info: KSC2734 NPN EPITAXIAL SILICON TRANSISTOR MIXER, OSC. FOR UHF TV TUNER SOT-23 High fT: 3.5GHz TYP ABSOLUTE MAXIMUM RATINGS (Ta= 25°C ) Characteristic Collector-Base Voltage Collector-Emltter Voltage Emitter-Base Voltage Collector Current (DC) Collector Dissipation

AOE SOT-23

Contextual Info: Central CMPT4401 NPN CMPT4403 PNP Semiconductor Corp. COMPLEMENTARY SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEM ICONDUCTOR CMPT4401, CM PT4403 types are com plem entary silicon tra n sisto rs manufactured by the epitaxial planar process, epoxy molded in a surface mount package,

CMXT2222A

Abstract: NPN transistor marking NY
Contextual Info: Data Sheet Central' CMXT2222A Sem iconductor Corp. SURFACE MOUNT DUAL NPN SILICON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 SOT-26 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION:

marking 6a2 smd

Contextual Info: BSS 123 In fin e o n technologies SIPMOS Small-Signal T ransistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Pin 2 Pin 1 G Pin 3 S Type l'os fc BDS(on) Package Marking BSS 123 100 V 0.17 A 6Í2 SOT-23 SAs Type BSS 123 BSS 123

E200765

Abstract: style 20276 hdmi. cable HDMI cable CONNECTOR HIGH SPEED HDMI Connector HDMI hdmi 20276 STYLE 20276 hdmi
Contextual Info: 171 L ± 3% y / 19 CN1 MATERIAL LIST: 1 NO. PARTS NAME SPECIFICATION DESCRIPTIO N UL20276 30AWC* 1P+AL+D+MYLA *4+30AWG* 1P+30AWG*5C CABLE <2> HOMI CONNECTOR ÏÏ w ~ OUT CN2 CN1 RED 1 0 7T W— 12.-M _ WHITE 2 ^ 1 1 ii D R A IN D R A IN ^ 2 +AL+D+B(AL 60%) 0 0 :6 .0 ± 0 .2 m m COLOR:BLACK

marking 7T

Abstract: PF0224US6
Contextual Info: SEM ICO NDUCTO R PF0224US6 TECHNICAL DATA EMI Filtering TVS APPLICATION EMI Filter and line termination for USB upstream ports on. • USB Hubs • PC peripherals DIM A Al B Bl C D G H T FEATURES • EMI/RFI filtering. • ESD Protection to IEC 61000-4-2 Level 4.

Contextual Info: S C S -IH O M S O N I0 J I« W B e S Í t p s Ü ocÍ STPS240CE SCHOTTKY RECTIFIER PRELIMINARY DATA . • ■ ■ ■ ■ VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP LOW THERMAL RESISTANCE EXTREMELY FAST SWITCHING SURFACE MOUNTED DEVICE

BFR106

Contextual Info: , Unc. LS 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BFR106 Silicon NPN RF Transistor DESCRIPTION • Low Noise Figure NF = 2.5 dB TYP. @VCE = 8 V, lc = 20 mA, f = 900 MHz • High Gain I S2ie I 2 = 10.5 dB TYP. @VCE= 8 V,lc = 70 mA,f = 900 MHz

Contextual Info: WT431LT1 PROGRAMMABLE PRECISION REFERENCE P b Lead Pb -Free 3 1 Features: * Programmagle output voltage to 36V. * Low dynamic output impedance 0.2Ω. * Sink current capability of 1 to 100mA. * Equivalent full-range temperature coefficient of 50ppm/°C typical for operation over full rated operating temperature range.

Contextual Info: WT431LT1 PROGRAMMABLE PRECISION REFERENCE P b Lead Pb -Free 3 1 Features: * Programmagle output voltage to 36V. * Low dynamic output impedance 0.2Ω. * Sink current capability of 1 to 100mA. * Equivalent full-range temperature coefficient of 50ppm/°C typical for operation over full rated operating temperature range.

marking r2k

Abstract: marking r1c GAJ SOT23 R1P SOT-223
Contextual Info: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) •N P N Transistors General purpose small signal amplifiers SST SMT BV qbo Min. BV ceo Min. b v EB0 Min. SSTH30 MMST1130 30V 25V 5V SST5088 MMST5088 35V 30V 4.6V 'f° Max. @VCB . hF.E.

pt2222a

Abstract: MARKING code oJ sot23 PT2222
Contextual Info: TM C C M PT2222A e n t r a l Sem i c o n d u c t o r C o r p . NPN SILICON TRANSISTOR DESCRIPTION: The C ENTRAL S E M IC O N D U C TO R CMPT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package,

Contextual Info: Central CM PT4401 NPN C M PT4403 PN P Semiconductor Corp. COMPLEMENTARY SILICON TRANSISTORS DESCRIPTION: The C E N T R A L S EM IC O N D U C T O R C M P T4401, CM PT4403 types are com plem entary silicon tran sisto rs manufactured by the epitaxial planar process,

Contextual Info: SGS-THOMSON * 7 # . l« e iI Í L I « M D g t BAT 17, D S SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION BAT 17 is a metal silioon junction diode featuring low turn-on voltage, low capacitance and ultrafast switching. Single or double series connected di­ odes are available. Two double diodes can be

Contextual Info: SILICON HOT-CARRIER DIODE SCHOTTKY BARRIER DIODE . designed primarily for UHF mixer applications but suitable also for use in detector and ultra-fast switching circuits. Supplied in an inexpensive plas­ tic package for low-cost, high-volume consum er requirements. A lso avail­

j 6910

Abstract: transistor j 6910
Contextual Info: S IE M E N S PNP Silicon AF Transistor • • • • • BCP 69 For general AF application High collector current High current gain Low collector-emitter saturation voltage Complementary type: BCP 68 NPN Type Marking Ordering Code (tape and reel) Pin Coni igura tion

Contextual Info: C A L IF O R N IA MICRO DEVICES CMC71 01A ► ► ► ► ► CM C710 1A Low Power Operational Amplifier, RRIO, SOT23-5 Features A pplications Tiny SOT23-5 package Guaranteed specs at 2.7V, 3V and 5V Low supply current typically 300/j A Rail-to-Rail input and output RRIO

smd code HF transistor

Abstract: transistor SMD MARKING CODE HF marking code CIE SMD Transistor transistor smd marking hf SMD HF transistor smd code marking rf ft sot23 SMD Transistor 7e K TRANSISTOR SMD MARKING CODE 596 m 147 smd transistor SMD TRANSISTOR MARKING 76
Contextual Info: • hbS3131 0DE47Qfl 14fl ■ N AMER P H I L I P S / D I S C R E T E APX BF824 fc.7E D J V_ H.F. SILICON PLANAR EPITAXIAL T RA N SIST O R P-N-P transistor in a plastic SO T-23 envelope especially intended for r.f. stages in f.m. front-ends in common base configuration for S M D applications.

Contextual Info: International [iorIRectifier PD - 2.480A 20CJQ100 2 Amp SCHOTTKY RECTIFIER Major Ratings and Characteristics C h a ra c te ris tic s 20C JQ 100 U n its 2.0 A 100 V 380 A 0.67 V -5 5 to 175 °C I f a v > R ectangular w aveform V rrm Ifsm @ Vf tp = 5ps sine

3SK240

Contextual Info: TOSHIBA 3SK240 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N-CHANNEL DUAL GATE MES TYPE 3SK240 Unit in mm TV TUNER, UHF RF AM PLIFIER APPLICATIONS + 0.2 M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Gatel-Drain Voltage Gate2-Drain Voltage Gatel-Souree Voltage

Contextual Info: bbS3T31 QQ23b34 4tl N AflER PHILIPS/DISCRETE b?E D Philips Semiconductors Data sheet status Product specification T APX BF998 date of issue April 1991 Silicon n-channel dual gate MOS-FET FEATURES QUICK REFERENCE DATA • Short channel transistor with high