MARKING 7N6 MOSFET Search Results

Marking 7n6 Mosfet

Abstract: marking 7n6 7n6 diode zxmn6a07f
Contextual Info: ZXMN6A07F 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS Max RDS(on) 60V 250mΩ@ VGS= 10V 350mΩ @ VGS= 4.5V Max ID TA = 25°C (Note 7) 1.4A 1.2A Description This MOSFET utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed, making it ideal for

Marking 7n6 Mosfet

Abstract: 7n6 diode marking 7n6 ZXMN6A07F ZXMN6A07FQTA tr/transistor 7n6
Contextual Info: A Product Line of Diodes Incorporated ZXMN6A07F 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS Max RDS(on) 60V 250mΩ @ VGS= 10V 350mΩ @ VGS= 4.5V Max ID TA = 25°C (Note 7) 1.4A 1.2A Description This MOSFET utilizes a unique structure that combines the benefits

7n6 TRANSISTOR

Abstract: Marking 7n6 TRANSISTOR transistor 7n6 07n60 Marking 7n6 Mosfet 7n6 diode H07N60 H07N60E H07N60F marking code PB
Contextual Info: HI-SINCERITY Spec. No. : MOS200604 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 1/5 MICROELECTRONICS CORP. H07N60 Series H07N60 Series Pin Assignment Tab N-Channel Power Field Effect Transistor 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate

ZXMN6A07F

Abstract: ZXMN6A07FTA ZXMN6A07FTC 18a diode sot23 18a sot23 Marking 7n6 Mosfet
Contextual Info: ZXMN6A07F 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY BR DSS=60V; RDS(ON)=0.4 D=1.05A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power

ZXMN6A07Z

Abstract: ZXMN6A07ZTA
Contextual Info: ZXMN6A07Z 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 100V; RDS(ON)= 0.4 ID= 1.9A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This

0018g

Abstract: ZXMN6A07Z ZXMN6A07ZTA Marking 7n6 Mosfet
Contextual Info: ZXMN6A07Z 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=60V; RDS(ON)=0.4⍀; ID=1.9A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage,

Contextual Info: ZXMN6A07F 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=60V; RDS(ON)=0.4⍀ D=1.05A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power

ZXMN6A07F

Abstract: ZXMN6A07FTA ZXMN6A07FTC Marking 7n6 Mosfet
Contextual Info: ZXMN6A07F 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=60V; RDS(ON)=0.4 ID=1A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This

Marking 7n6 Mosfet

Abstract: marking 7n6 18a diode sot23 7n6 diode ZXMN6A07F
Contextual Info: ZXMN6A07F 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 60V; RDS(ON) = 0.300 ID = 1A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This

ZXMN6A07Z

Abstract: ZXMN6A07ZTA 7n6 diode
Contextual Info: ZXMN6A07Z 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 60V; RDS(ON)= 0.300 ID= 2.2A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This

ZXMN6A07F

Abstract: Marking 7n6 Mosfet
Contextual Info: ZXMN6A07F 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 60V; RDS(ON) = 0.300 ID = 1.2A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This

Marking 7n6 Mosfet

Contextual Info: ZXMN6A07Z 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 60V; RDS(ON)= 0.300 ID= 2.2A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This

Marking 7n6 Mosfet

Abstract: 7n6 diode
Contextual Info: ZXMN6A07Z 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 60V; RDS(ON)= 0.300 ID= 1.9A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This

Contextual Info: ZXMN6A07Z 60V SOT89 N-channel enhancement mode mosfet Summary V BR DSS 60 RDS(on) (⍀) ID (A) 0.250 @ VGS= 10V 2.5 0.350 @ VGS= 4.5V 2.1 Description D This new generation trench MOSFET from Zetex utilizes a unique structure combining the benefits of low on-state resistance with fast

Contextual Info: ZXMN6A07F 60V SOT23 N-channel enhancement mode mosfet Summary V BR DSS 60 RDS(on) (⍀) ID (A) 0.250 @ VGS= 10V 1.4 0.350 @ VGS= 4.5V 1.2 Description D This new generation trench MOSFET from Zetex utilizes a unique structure combining the benefits of low on-state resistance with fast

marking 7n6

Abstract: 7n6 SOT23 TS16949 ZXMN6A07F ZXMN6A07FTA regulator 59
Contextual Info: ZXMN6A07F 60V SOT23 N-channel enhancement mode mosfet Summary RDS on (⍀) ID (A) 0.250 @ VGS= 10V 1.4 0.350 @ VGS= 4.5V 1.2 V(BR)DSS 60 Description D This new generation trench MOSFET from Zetex utilizes a unique structure combining the benefits of low on-state resistance with fast