MARKING 76 AMPLIFIER Search Results

BFR90

Contextual Info: SIEMENS NPN Silicon RF Transistor BFR 90 • For broadband amplifiers up to 2 GHz at collector currents from 1 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFR 90 BFR 90 Q62702-F560 Pin Configuration

Contextual Info: LMV710, LMV711, LMV715 SINGLE LOW-POWER RRIO OPERATIONAL AMPLIFIERS WITH HIGH OUTPUT CURRENT DRIVE AND SHUTDOWN www.ti.com SLOS463A – APRIL 2005 – REVISED JULY 2005 FEATURES • • • • • • • • • 2.7-V and 5-V Performance Low Offset Voltage . . . 0.4 mV Typ, 3 mV Max

Contextual Info: LMV710, LMV711, LMV715 SINGLE LOW-POWER RRIO OPERATIONAL AMPLIFIERS WITH HIGH OUTPUT CURRENT DRIVE AND SHUTDOWN www.ti.com SLOS463A – APRIL 2005 – REVISED JULY 2005 FEATURES • • • • • • • • • 2.7-V and 5-V Performance Low Offset Voltage . . . 0.4 mV Typ, 3 mV Max

Contextual Info: Not Recommended for New Designs LMV710, LMV711, LMV715 SINGLE LOW-POWER RRIO OPERATIONAL AMPLIFIERS WITH HIGH OUTPUT CURRENT DRIVE AND SHUTDOWN www.ti.com SLOS463A – APRIL 2005 – REVISED JULY 2005 FEATURES • • • • • • • • • 2.7-V and 5-V Performance

Contextual Info: Product Description Sirenza Microdevices’ SGB-4533 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 3V to

20j* sot-23-6

Abstract: LMV710 LMV710IDBVR LMV711 LMV715
Contextual Info: LMV710, LMV711, LMV715 SINGLE LOW-POWER RRIO OPERATIONAL AMPLIFIERS WITH HIGH OUTPUT CURRENT DRIVE AND SHUTDOWN www.ti.com SLOS463A – APRIL 2005 – REVISED JULY 2005 FEATURES • • • • • • • • • 2.7-V and 5-V Performance Low Offset Voltage . . . 0.4 mV Typ, 3 mV Max

Contextual Info: Product Description Sirenza Microdevices’ SGB-4333 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 3V to

simple circuit diagram of electronic choke

Abstract: 80021 SGB-4333
Contextual Info: Product Description Sirenza Microdevices’ SGB-4333 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 3V to

Contextual Info: Semiconductor US3881 CMOS Chopper Stabilized, Hall-Effect Sensor Latch 2.2V-18V Features □ □ □ □ □ □ □ Optimized for BCD Motor Applications Operating Voltage Range: 2.2V to 18V CM OS Device for Optimal Stability Chopper Stabilized: No Amplifier Offset

smd transistor marking a7

Abstract: amplifier A62 marking A76A LMV711 LMV712 LMV712BL LMV712BLX LMV712LD LMV712LDX LMV712MM
Contextual Info: LMV712 Low Power, Low Noise, High Output, RRIO Dual Operational Amplifier with Independent Shutdown General Description Features The LMV712 duals are high performance BiCMOS operational amplifiers intended for applications requiring Rail-to-Rail inputs combined with speed and low noise. They

A48A

Abstract: marking A48A LMV710 DIE
Contextual Info: LMV710 and LMV711 Low Power, RRIO Operational Amplifiers with High Output Current Drive and Shutdown Option General Description Features The LMV710 and LMV711 are BiCMOS operational amplifiers with a CMOS input stage. Both devices have greater than RR input common mode voltage range, rail-to-rail output and high output current drive. They offer a bandwidth of

Contextual Info: www.ti.com LMV712 LOW-POWER LOW-NOISE HIGH-OUTPUT RRIO DUAL OPERATIONAL AMPLIFIER WITH INDEPENDENT SHUTDOWN SLOS485 – JANUARY 2006 FEATURES • • • • • • • • • • APPLICATIONS 5-MHz Gain Bandwidth Product 5-V/ s Slew Rate Low Noise: 20 nV/√Hz

Contextual Info: LMV712 Low Power, Low Noise, High Output, RRIO Dual Operational Amplifier with Independent Shutdown General Description Features The LMV712 duals are high performance BiCMOS operational amplifiers intended for applications requiring Rail-to-Rail inputs combined with speed and low noise. They

948C

Abstract: MRFIC1805 MRFIC1805R2
Contextual Info: MOTOROLA Order this document by MRFIC1805/D SEMICONDUCTOR TECHNICAL DATA The MRFIC Line MRFIC1805 1.9 GHz GaAs Power Amplifier This two–stage class AB monolithic GaAs amplifier in a low–cost 16 lead plastic package is designed for output or driver applications in 1.9 GHz PCS

trimmer cw 3296

Abstract: trimmer 3296 Vertical trimpot 3296 bourns 3386 horizontal bourns 3296 potentiometer 1m trimpot Bourns 3296 202 trimmer 3296 code trimpot catalog trimpot multiturn
Contextual Info: *R oH V SC AV ER OM AI SIO PL LA N IA BL S NT E Features Model 3296-OT1 is available but not recommended for new designs. • 3/8 ” Square/ Multiturn / Cermet Industrial / Sealed ■ Designed for operational amplifier offset voltage adjustment applications

trimmer 3296

Abstract: 1m trimpot trimmer cw 3296 trimmer 3296 code Bourns 3296 202 3296 potentiometer 100k trimmer 3386 cw Bourns 3296
Contextual Info: *R oH V SC AV ER OM AI SIO PL LA N IA BL S NT E Features Model 3296-OT1 is obsolete and not recommended for new designs. • 3/8 ” Square/ Multiturn / Cermet Industrial / Sealed ■ Designed for operational amplifier offset voltage adjustment applications

ic MIP 411

Abstract: MIP 411 1N4148 BS170 JESD97 KP1040 TS4956 TS4956EIJT
Contextual Info: TS4956 Stereo audio amplifier system with I2C bus interface • Operating from VCC = 2.7 V to 5.5 V ■ I²C bus control interface ■ 38 mW output power @ VCC = 3.3 V, THD = 1%, F = 1 kHz, with 16Ω Load ■ Ultra low consumption in standby mode: 0.5 µA

P10568EJ2V0DS00

Abstract: NEC 939 u79 transistor u79 335 NEC 2134 transistor NEC m 2134 transistor
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK206 RF AMP. FOR UHF TV TUNER N-CHANNEL G a As DUAL GATE MES FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD FEATURES • Suitable for use as RF amplifier in UHF TV tuner. • Low Crss: • • High G p s : 20 dB TYP. Low NF:

4250CN

Abstract: lm4250 ua244 lm42 LM4250CH/NOPB
Contextual Info: LM4250 Programmable Operational Amplifier General Description Features The LM4250 and LM4250C are extremely versatile programmable monolithic operational amplifiers. A single external master bias current setting resistor programs the input bias current, input offset current, quiescent power consumption,

Contextual Info: Preliminary SBB-4089 SBB-4089Z Product Description Sirenza Microdevices’ SBB-4089 is a high performance InGaP HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and

NEC 41-A 002

Abstract: 8085 based traffic control system
Contextual Info: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK135A RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD PACKAGE DIMENSIONS FEATURES • in millimeters Suitable for use as RF amplifier in UHF TV tuner. • Low C rss

BB4Z

Abstract: SBB-4089 1008CS SBB-4089Z sbb4089 85C72
Contextual Info: SBB-4089 SBB-4089Z Product Description Sirenza Microdevices’ SBB-4089 is a high performance InGaP HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 5V supply, the

chebyshev 0.01dB

Contextual Info: LT1462/LT1463 / T u i e « TECHNOLOGY D u a l/Q u a d M icropow er, 260^iW C -Load P icoam pere Bias C urrent JFET Input O p Am ps KATURCS DCSCRIPTIOn • Input Bias Current: 20pA Max * Supply Current per Amplifier: 45pA Max The LT 1462 dual and LT1463 (quad) are the first

BFY 94 transistor

Contextual Info: SIEM ENS NPN Silicon RF Transistor BFY 90 • For broadband amplifiers up to 1 GHz and non-saturated switches at collector currents from 1 mA to 20 mA. € CECC-type available: GEGC 50002/253. ESD: Electrostatic discharge sensitive device, observe handling precautions!