MARKING 62M Search Results

h114

Contextual Info: FAST RECOVERY DIODE H114 OUTLINE DRAWING Color of marking H114B 200V H114D (400V) H114E (500V) H114F (600V) Red Yellow Green Blue Lot mark Cathode band φ 0.8 (0.03) H 29MIN. (1.14) Type 5MAX (0.2) 62MIN. (2.44) 29MIN. (1.14) Direction of polarity Unit in mm(inch)

H114F

Abstract: H114B H114 H114D H114E
Contextual Info: FAST RECOVERY DIODE H114 OUTLINE DRAWING Color of marking H114B 200V H114D (400V) H114E (500V) H114F (600V) Red Yellow Green Blue Lot mark Cathode band φ 0.8 (0.03) H 29MIN. (1.14) Type 5MAX (0.2) 62MIN. (2.44) 29MIN. (1.14) Direction of polarity Unit in mm(inch)

H114B

Abstract: H114 HITACHI H114 H114D H114E H114F Hitachi DSA0047
Contextual Info: FAST RECOVERY DIODE H114 OUTLINE DRAWING Color of marking H114B 200V H114D (400V) H114E (500V) H114F (600V) Red Yellow Green Blue Lot mark Cathode band φ 0.8 (0.03) H 29MIN. (1.14) Type 5MAX (0.2) 62MIN. (2.44) 29MIN. (1.14) Direction of polarity Unit in mm(inch)

Contextual Info: SCRH124B SMD POWER INDUCTORS XXX MARKING Features 1. Magnetically shielded construction 2. Excellent Power Density 3. Engineered to Provide High Efficiency CHARACTERISTICS 2 (1) SCRH124B-3R9 SCRH124B-4R7 SCRH124B-6R8 SCRH124B-8R2 SCRH124B-100 SCRH124B-120

Contextual Info: SCRH124B SMD POWER INDUCTORS XXX MARKING ● Features 1. Magnetically shielded construction 2. Excellent Power Density 3. Engineered to Provide High Efficiency CHARACTERISTICS 2 (1) SCRH124B-3R9 SCRH124B-4R7 SCRH124B-6R8 SCRH124B-8R2 SCRH124B-100 SCRH124B-120

Contextual Info: SC63LCB SMD POWER INDUCTORS XXX MARKING ● Features 1. Magnetically shielded construction 2. LOW Profile 3.0mm max. height x 6.3mm square 3. Low DC resistance makes this product very suitable for large current applications CHARACTERISTICS SC63LCB-1R0 1.0

Contextual Info: SCC5D23 SMD POWER INDUCTORS XXX MARKING Features 1. Magnetically shielded construction – Low EMI 2 Excellent Power Density 3 Engineered to Provide High Efficiency ELECTRICAL CHARACTERISTICS 2 (1) SCC5D23-2R7 SCC5D23-3R3 SCC5D23-3R9 SCC5D23-4R7 SCC5D23-5R6

Contextual Info: SC63LCB SMD POWER INDUCTORS XXX MARKING Features 1. Magnetically shielded construction 2. LOW Profile 3.0mm max. height x 6.3mm square 3. Low DC resistance makes this product very suitable for large current applications CHARACTERISTICS SC63LCB-1R0 1.0 100KHZ

Contextual Info: SCC5D23 SMD POWER INDUCTORS XXX MARKING ● Features 1. Magnetically shielded construction – Low EMI 2 Excellent Power Density 3 Engineered to Provide High Efficiency ELECTRICAL CHARACTERISTICS 2 (1) SCC5D23-2R7 SCC5D23-3R3 SCC5D23-3R9 SCC5D23-4R7 SCC5D23-5R6

Contextual Info: Specification Sheet Outdoor Extreme Eyeleds Outdoor Extreme is a range of exterior recessed LED pathway lighting, designed to last in harsh environmental conditions and heavy traffic areas. Outdoor Extreme is intended for decoration, orientation, marking for guiding, and safety, in

H114F

Abstract: H114B H114 H114E H114D
Contextual Info: FAST RECOVERY DIODE H114 OUTLINE DRAWING Color of marking H114B 200V H114D (400V) H114E (500V) H114F (600V) Red Yellow Green Blue H 29MIN. (1.14) Type Lot mark 62MIN. (2.44) • 高速スイッチング用 •拡散接合形ガラスモールド構造 φ 0.8

DMN4060SVT

Abstract: dmn4060 2012 62m
Contextual Info: DMN4060SVT 45V N-CHANNEL ENHANCEMENT MODE MOSFET V BR DSS Features and Benefits • • • • • • ID RDS(on) max TA = 25°C 46mΩ @ VGS = 10V 4.8A 62mΩ @ VGS = 4.5V 4.1A 45V Low Input Capacitance Low On-Resistance Fast Switching Speed Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1)

Contextual Info: SupreMOS TM FCH47N60N N-Channel MOSFET 600V, 47A, 62mΩ Features Description o • 650V @TJ = 150 C The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based

Contextual Info: LESHAN RADIO COMPANY, LTD. 30V N-Channel Enhancement-Mode MOSFET LN2306LT1G VDS= 30V RDS ON , Vgs@10V, Ids@5.8A = 38mΩ RDS(ON), Vgs@4.5V, Ids@5.0A = 43mΩ RDS(ON), Vgs@2.5V, Ids@4.0A = 62mΩ 3 1 2 Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance

N06 MOSFET

Abstract: LN2306LT1G n06g ln2306 43m marking N-Channel, 30V, 4.0A, Power MOSFET SOT-23
Contextual Info: LESHAN RADIO COMPANY, LTD. 30V N-Channel Enhancement-Mode MOSFET LN2306LT1G VDS= 30V RDS ON , Vgs@10V, Ids@5.8A = 38mΩ RDS(ON), Vgs@4.5V, Ids@5.0A = 43mΩ RDS(ON), Vgs@2.5V, Ids@4.0A = 62mΩ 3 1 2 Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance

Contextual Info: LESHAN RADIO COMPANY, LTD. LN2306LT1G S-LN2306LT1G 30V N-Channel Enhancement-Mode MOSFET VDS= 30V RDS ON , Vgs@10V, Ids@5.8A = 38mΩ RDS(ON), Vgs@4.5V, Ids@5.0A = 43mΩ RDS(ON), Vgs@2.5V, Ids@4.0A = 62mΩ 3 1 2 Features Advanced trench process technology

FCH47N60N

Abstract: Tl141
Contextual Info: SupreMOSTM FCH47N60N N-Channel MOSFET 600V, 47A, 62mΩ Features Description • RDS on = 51.5mΩ ( Typ.)@ VGS = 10V, ID =23.5 A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based

Contextual Info: FDS3992 Dual N-Channel PowerTrench MOSFET 100V, 4.5A, 62mΩ Features Applications • rDS ON = 54mΩ (Typ.), VGS = 10V, ID = 4.5A • DC/DC converters and Off-Line UPS • Qg(tot) = 11nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge

Contextual Info: RQ5A030AP Pch -12V -3A Middle Power MOSFET Datasheet l Outline VDSS -12V RDS on (Max.) 62mΩ ID ±3.0A PD 1.0W TSMT3 l Inner circuit l Features 1) Low on - resistance.

STM6920A

Abstract: WT6920AM
Contextual Info: WT6920AM DRAIN SOURCE VOLTAGE 6 5 D2 4 G2 5 AMPERES D2 7 3 S2 D1 G1 2 Features: DRAIN CURRENT 8 S1 1 P b Lead Pb -Free D1 Surface Mount N-Channel Enhancement Mode MOSFET 40 VOLTAGE *Super high dense cell design for low RDS(ON) RDS(ON)<35mΩ@VGS = 10V RDS(ON)<62mΩ@VGS = 4.5V

LR29862

Abstract: NBK030205-E10480B NBK101105-E184655
Contextual Info: Surface Mount Fuses NANO2 > Very Fast-Acting > 451/453 Series 451/453 Series Fuse PS E Description Features t
7FSZ
GBTU
BDUJOH t
4NBMM
TJ[F
t
8JEF
SBOHF
PG
DVSSFOU
rating available 62mA to 15A Agency Approvals AGENCY AGENCY FILE NUMBER AMPERE RANGE

Contextual Info: Surface Mount Fuses NANO2 > Very Fast-Acting > 451/453 Series 451/453 Series Fuse PS E Description Features t
7FSZ
GBTU
BDUJOH t
4NBMM
TJ[F
t
8JEF
SBOHF
PG
DVSSFOU
rating available 62mA to 15A Agency Approvals AGENCY AGENCY FILE NUMBER AMPERE RANGE

FUSE 451

Abstract: NBK030205-E10480B LR29862 NBK101105-E184655 littelfuse 451
Contextual Info: Surface Mount Fuses NANO2 > Very Fast-Acting > 451/453 Series 451/453 Series Fuse PS E Description Features t
7FSZ
GBTU
BDUJOH t
4NBMM
TJ[F
t
8JEF
SBOHF
PG
DVSSFOU
rating available 62mA to 15A Agency Approvals AGENCY AGENCY FILE NUMBER AMPERE RANGE

EIA rs 481-2

Contextual Info: Surface Mount Fuses NANO2 > Very Fast-Acting > 451/453 Series 451/453 Series Fuse PS E Description Features • Very fast acting • Small size • Wide range of current rating available 62mA to 15A Agency Approvals AGENCY AGENCY FILE NUMBER AMPERE RANGE