LN2306LT1G Search Results
LN2306LT1G Price and Stock
LRC (Leshan Radio Co., Ltd) LN2306LT1GTrans MOSFET N-CH 30V 5.8A 3-Pin SOT-23 T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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LN2306LT1G | 3,000 |
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LN2306LT1G Datasheets Context Search
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Contextual Info: LESHAN RADIO COMPANY, LTD. LN2306LT1G S-LN2306LT1G 30V N-Channel Enhancement-Mode MOSFET VDS= 30V RDS ON , Vgs@10V, Ids@5.8A = 38mΩ RDS(ON), Vgs@4.5V, Ids@5.0A = 43mΩ RDS(ON), Vgs@2.5V, Ids@4.0A = 62mΩ 3 1 2 Features Advanced trench process technology |
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LN2306LT1G S-LN2306LT1G AEC-Q101 236AB) LN2306LT3G S-LN2306LT3G 3000/Tape 10000/Tape | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. 30V N-Channel Enhancement-Mode MOSFET LN2306LT1G VDS= 30V RDS ON , Vgs@10V, Ids@5.8A = 38mΩ RDS(ON), Vgs@4.5V, Ids@5.0A = 43mΩ RDS(ON), Vgs@2.5V, Ids@4.0A = 62mΩ 3 1 2 Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance |
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LN2306LT1G 236AB) 3000/Tape LN2306LT3G 10000/Tape 06LT1G OT-23 | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. LN2306LT1G ▼ Capable of 2.5V gate drive ▼ Lower on-resistance 3 ▼ Surface mount package ▼ Pb-Free package is available 1 2 SOT– 23 TO–236AB D G S Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS |
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LN2306LT1G 236AB) | |
N06 MOSFET
Abstract: LN2306LT1G n06g ln2306 43m marking N-Channel, 30V, 4.0A, Power MOSFET SOT-23
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LN2306LT1G 236AB) 3000/Tape LN2306LT3G 10000/Tape OT-23 N06 MOSFET LN2306LT1G n06g ln2306 43m marking N-Channel, 30V, 4.0A, Power MOSFET SOT-23 | |
2x062h
Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
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ZMM22 ZMM24 ZMM27 ZMM43 ZMM47 2x062h gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062 |