MARKING 619 SOT23 Search Results

SOT23 marking 619

Abstract: marking 619 npn sot23
Contextual Info: A Product Line of Diodes Incorporated FMMT619 50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23 Features and Benefits Mechanical Data • • • • • • • • • • • • • • • BVCEO > 50V IC = 2A Continuous Collector Current Low Saturation Voltage VCE sat < 200mV @ 1A

Contextual Info: A Product Line of Diodes Incorporated FMMT619 50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23 Features and Benefits Mechanical Data • • • • • • • • • • • • BVCEO > 50V IC = 2A Continuous Collector Current Low Saturation Voltage VCE sat < 200mV @ 1A

FMMT619TA

Abstract: FMMT619TC FMMT619 FMMT720
Contextual Info: A Product Line of Diodes Incorporated FMMT619 50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23 Features and Benefits Mechanical Data • • • • • • • • • • • • BVCEO > 50V IC = 2A Continuous Collector Current Low Saturation Voltage VCE sat < 200mV @ 1A

FMMT619

Abstract: fmmt720
Contextual Info: A Product Line of Diodes Incorporated FMMT619 50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • • • BVCEO > 50V IC = 2A Continuous Collector Current 625mW power dissipation

all diodes ratings

Abstract: FMMT619TA SOT23 marking 619 marking 619 sot23 marking 619 FMMT619 led driver sot-23
Contextual Info: A Product Line of Diodes Incorporated FMMT619 50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • VCEO > 50V IC cont = 2A 625mW Power dissipation Low Equivalent On Resistance

BSS81C

Abstract: BSS79 BSS79B BSS79C BSS80 BSS81 BSS81B BSS82
Contextual Info: BSS79, BSS81 NPN Silicon Switching Transistors 3
High DC current gain: 0.1mA to 500 mA
Low collector-emitter saturation voltage
Complementary types: BSS80, BSS82 PNP 2 1 Type Marking Pin Configuration BSS79B CEs 1=B 2=E 3=C SOT23 BSS79C CFs 1=B 2=E

BSS79

Contextual Info: BSS79, BSS81 NPN Silicon Switching Transistors 3
High DC current gain: 0.1mA to 500 mA
Low collector-emitter saturation voltage
Complementary types: BSS80, BSS82 PNP 2 1 Type Marking Pin Configuration BSS79B CEs 1=B 2=E 3=C SOT23 BSS79C CFs 1=B 2=E

br 2222 npn

Abstract: SMBT2222A SMBT2907A
Contextual Info: SMBT2222A NPN Silicon Switching Transistor 3
High DC current gain: 0.1mA to 500 mA
Low collector-emitter saturation voltage
Complementary type: SMBT2907A PNP 2 1 Type Marking SMBT2222A s1P Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings

npn 2222 transistor

Abstract: s1P SOT23 SMBT2222A SOT23 SMBT2222A SMBT2907A MARKING s1P MARKING 1B SOT23 EHN00056
Contextual Info: SMBT2222A NPN Silicon Switching Transistor 3
High DC current gain: 0.1mA to 500 mA
Low collector-emitter saturation voltage
Complementary type: SMBT2907A PNP 2 1 Type Marking SMBT2222A s1P Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings

MARKING s1P

Abstract: 99V0
Contextual Info: SMBT2222A NPN Silicon Switching Transistor 3
High DC current gain: 0.1mA to 500 mA
Low collector-emitter saturation voltage
Complementary type: SMBT2907A PNP 2 1 Type Marking SMBT2222A s1P Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings

Contextual Info: BSS79, BSS81 NPN Silicon Switching Transistors 3
High DC current gain: 0.1mA to 500 mA
Low collector-emitter saturation voltage
Complementary types: BSS80, BSS82 PNP 2 1 Type Marking Pin Configuration BSS79B CEs 1=B 2=E 3=C SOT23 BSS79C CFs 1=B 2=E

Contextual Info: Transistors SMD Type Product specification FMMT619 SOT-23 • Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● Collector current:IC=2A 0.4 3 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 ● power dissipation :PC=625mw 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01

smd transistor MARKING 2A

Contextual Info: Transistors SMD Type NPN Silicon Power Switching Transistor FMMT619 SOT-23 • Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● Collector current:IC=2A 0.4 3 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 ● power dissipation :PC=625mw 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1

marking SH SOT23

Abstract: smd marking 619 BB505B smd marking bb marking 12 SOD123 SOD-123 BB801 BB409 BA 811 SIEMENS marking
Contextual Info: SIEMENS AKTIEN 6E SEL LSCHAF 47E D 0235bDS OOebBST T « S I E G NF-Dioden / AF Diodes PIN Diodes Glass Package Type Max. ratine3s 1/r h mA V Marking Fig. nX 50 150 < 50 0.55 1 < 40 100 < 1 DO-35 DHD - 2 20 o 0.92 0.28 1 1 < 0.7 22 100 100 < 1 < 1.1 SOD-123

THS3201MDGNREP

Contextual Info: D-8 DBV-5 DGN-8 THS3201-EP DGK-8 www.ti.com SGLS283 – APRIL 2005 1.8-GHz, LOW DISTORTION, CURRENT FEEDBACK AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • • • • • • Controlled Baseline One Assembly / Test Site, One Fabrication

SOT23 marking 619

Abstract: SN74AHCT MARKING 313 sc70 359 SOT23 Buffer gate 6 pin sot23 SOT23 MARKING SB AHC* marking marking 619 sot23 abstract Buffer gate sot23
Contextual Info: LL Non-Inverting Buffer and Driver - LL Buffer Gate with 3-State Output - SN74AHCT. TI Home > Semiconductors > Logic > Little Logic > LL Buffer, Driver and Transceiver > LL Non-Inverting Buffer and Driver > LL Buffer Gate with 3-State Output > SN74AHCT1G125 Status:

hearing aids amplifiers

Contextual Info: SST200/200A Vishay Siliconix New Product N-Channel JFETs PRODUCT SUMMARY VGS off 0 0 V(BR}GSS -0 .3 to -0 .9 00 9 is M in (m S ) lo s s 0.25 -2 5 Min (mA) 0.15 FEATURES BENEFITS APPLICATIONS • Low Cutoff Voltage: <0 .9 V • • Mini-Microphones • High Input Im pedance

MV409

Contextual Info: MOTOROLA •i SEMICONDUCTOR TECHNICAL DATA MMBV409L MV409 Silicon Epicap Diodes . . . designed for general frequency control and tuning applications; providing solid-state reliability in replacement of mechanical tuning methods. • High Q with Guaranteed Minimum Values at VHF Frequencies

Contextual Info: D-8 DBV-5 DGN-8 THS3201 DGK-8 www.ti.com . SLOS416C – JUNE 2003 – REVISED JUNE 2009 1.8-GHz, LOW DISTORTION, CURRENT-FEEDBACK AMPLIFIER

Contextual Info: D-8 DBV-5 DGN-8 THS3201-EP DGK-8 www.ti.com SGLS283 – APRIL 2005 1.8-GHz, LOW DISTORTION, CURRENT FEEDBACK AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • • • • • • Controlled Baseline One Assembly / Test Site, One Fabrication

EME-G600

Abstract: 15-V THS3001 THS3122 THS3201 THS3201-EP THS3202 THS4271
Contextual Info: D-8 DBV-5 DGN-8 THS3201-EP DGK-8 www.ti.com SGLS283 – APRIL 2005 1.8-GHz, LOW DISTORTION, CURRENT FEEDBACK AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • • • • • • Controlled Baseline One Assembly / Test Site, One Fabrication

Contextual Info: D-8 DBV-5 DGN-8 THS3201-EP DGK-8 www.ti.com SGLS283 – APRIL 2005 1.8-GHz, LOW DISTORTION, CURRENT FEEDBACK AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • • • • • • Controlled Baseline One Assembly / Test Site, One Fabrication

Contextual Info: D-8 DBV-5 DGN-8 THS3201-EP DGK-8 www.ti.com SGLS283 – APRIL 2005 1.8-GHz, LOW DISTORTION, CURRENT FEEDBACK AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • • • • • • Controlled Baseline One Assembly / Test Site, One Fabrication

Contextual Info: D-8 DBV-5 DGN-8 THS3201-EP DGK-8 www.ti.com SGLS283 – APRIL 2005 1.8-GHz, LOW DISTORTION, CURRENT FEEDBACK AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • • • • • • Controlled Baseline One Assembly / Test Site, One Fabrication