MARKING 5S4 Search Results

Contextual Info: 32E D • aS3b3S0 Q Q lbSS? 7 H S I P Silicon Switching Diode Array SMBD 2837/38 _ SIEMENS/ S P C L i T-O%~03 SEMICONDS • For high-speed switching applications • Common cathode Type Marking Ordering code for versions in bulk Ordering code for versions on 8-mm tape

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MGBR5S45 Preliminary DIODE MOS GATED BARRIER RECTIFIER  DESCRIPTION The UTC MGBR5S45 is a surface mount mos gated barrier rectifier, it uses UTC’s advanced technology to provide customers with low forward voltage drop and high switching speed, etc.

marking 1F

Abstract: RDC5 HP4280A LES3811T SGE2660-3
Contextual Info: Magnetic Component Specification Specification Number SGE2660-3 Rev.A 100402 This Document describes and specifies the electrical and mechanical characteristics of SGE2660-3 high voltage transformer for CCFL inverter power supply. This component should be designed and manufactured in accordance with Engineering

Contextual Info: MOT OROL A SC XSTRS/R F> 4bE b3b7S5M D QQIBTB? b «M O T bT Order this data sheet By MUN2211/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MUN2211 MUN2212 MUN2213 Bias Resistor Transistor NPN Silicon Surface Mount Transistor With Monolithic Bias Resistor Network

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MGBR5S40 Preliminary DIODE MOS GATED BARRIER RECTIFIER  DESCRIPTION The UTC MGBR5S40 is a surface mount mos gated barrier rectifier, it uses UTC’s advanced technology to provide customers with low forward voltage drop and high switching speed, etc.

Contextual Info: VITELIC CORP Tfl VITELIC Ì>E| TS0S310 DDDD303 T 23-12 V61C35 FAMILY HIGH PERFORMANCE LOW POWER 2 Kx 8 DUAL PORT MEMORY Description Features • 2K x 8 bit CM OS Static RAM with 3-state outputs ■ High Speed Multiplexed Dual Port operation • 55ns, 70ns, 90ns, 120ns access time

Contextual Info: International PD'9-1229 [jogRectifier_ IRFP350LC HEXFET Power MOSFET • • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced Cjgg, C0Ss, ^rss Isolated Central Mounting Hole Dynamic dv/dt Rated

Contextual Info: International I« ] Rectifier PD-9.751 IRFIZ24G fc>5E D INTERNATIONAL R E C T I F I E R HEXFET® Power M O SFET • • • • • • I IN R • " K S ' a ools37b 0T6 Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm

MOSFET 50V 100A TO-220

Contextual Info: 4055452 International E?R Rectifier PD-9.909 IIN R DD15fi5b Ô14 IRL530S b5E D INTERNATIONAL R E C T IF IE R HEXFET Power MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at V gs=4V & 5V

Contextual Info: UNR International Rectifier MflSSMSB 0015030 ATT HEXFET Pow er M O S F E T INTERNATIONAL RECTIFIER PD-9.561C IRL520 Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at V g s =4V & 5V 175°C Operating Temperature Fast Switching

D10N2

Abstract: marking dC
Contextual Info: Order this data sheet by MRF10070H/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF10070H* Microwave Pulse Power Transistor 70 Watts Peak NPN 1025-1150 MHz Designed for 1025-1150 MHz pulse common base amplifiers. C P liO • Guaranteed Performance at 1090 MHz - Output Power = 70 Watts Peak

RB040-40T

Abstract: Schaffner load dump generator rb040 load dump test Car Battery 12V short circuit marking 5S4 ASD 32 pin marking 113a RB04 Schaffner 781
Contextual Info: X= 7 SGS-THOMSON ^7# IM niE ^llILlO fæ m O S _ R B 0 4 0 -4 0 T REVERSED-BATTERY AND OVERVOLTAGE PROTECTION Application Specific Discretes a.S.d. FEATURES . PROTECTION AGAINST"LOAD DUMP” EFFECT • DIODE TO GUARD AGAINST BATTERY REVERSAL

Contextual Info: PD-9.1647 International IQR Rectifier IRF7523D1 PRELIMINARY FETKY MOSFET and Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation V Technology Micro8 Footprint a o r- ID K ur * - - 3 g an

Q02c

Contextual Info: P D -9 .1 5 6 8 B International I R Rectifier IRF7317 PRELIMINARY HEXFET Power M O S F E T • Generation V Technology • Ultra Low On-Resistance • Dual N and P Channel MOSFET • Surface Mount • Fully Avalanche Rated Description Fifth Generation HEXFETsfrom International Rectifier

Contextual Info: NEC MOS INTEGRATED CIRCUIT juPD42S4400L, 424400L 3.3 V OPERATION 4 M BIT DYNAMIC RAM 1 M-WORD BY 4-BIT, FAST PAGE MODE Description The /¿PD42S4400L, 424400L are 1 048 576 w ords by 4 bits dynam ic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.

CH340

Abstract: CS61535A CS61574A CS61575 CS62180A CS62180A-IL CS62180A-IP CS62180B DS2180A PLS151
Contextual Info: A Cirrus Logic Company T1 Framer Features General Description The CS62180A and CS62180B are monolithic CMOS devices which encode and decode T 1 framing formats. The devices support bit-seven and B8ZS zero suppres­ sion, and bit-robbed signaling. Clear channel mode can

ssy 1920

Abstract: ssy 1920 8 pin MF-4MA MWAVE sc filter ic mf4 CHIP SM 4108
Contextual Info: CS4216 Semiconductor Corporation 16-Bit Stereo Audio Codec Features General Description C3lwave • CMOS Stereo Audio Input/Output System Delta-Sigma A/D Converters Delta-Sigma D/A Converters Input Anti-Aliasing and Output Smoothing Filters Programmable Input Gain and

sn55470

Abstract: 7544-1 transistor SN75326 SN7401 SN75426 54175 SN75270 SN55450 sn75493 National Semiconductor Linear Data Book
Contextual Info: The Interface Circuits Data Book for Design Engineers First Edition IM P O R T A N T NO TICES Texas Instruments reserves the right to make changes at any tim e in order to im prove design and to supply the best product possible. T l cannot assume any responsibility for any circuits shown or