MARKING 544 LOW NOISE AMPLIFIER Search Results
MARKING 544 LOW NOISE AMPLIFIER Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CLC425A/BPA |
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CLC425 - Op Amp, Wideband, Low-Noise - Dual marked (5962-9325901MPA) |
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HA4-5114/883 |
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HA4-5114 - Quad, Low Noise, Uncompensated Operational Amplifier - Dual marked (5962-89634012A) |
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CLC428A/BPA |
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CLC428 - OP AMP, DUAL, LOW NOISE, WIDEBAND, VOLT FDBK - Dual marked (5962-9470801MPA) |
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NFMJMPL226R0G5D | Murata Manufacturing Co Ltd | Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose | |||
NFMJMPC156R0G3D | Murata Manufacturing Co Ltd | Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose |
MARKING 544 LOW NOISE AMPLIFIER Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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SMA 905 Connector Dimensions
Abstract: c1137
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PP-38 SMA 905 Connector Dimensions c1137 | |
Contextual Info: Thin-Film Cascadable Amplifier 10 to 500 MHz Technical Data UTO/UTC 544 Series Features Description Pin Configuration • Frequency Range: 10 to 500 MHz The 544 Series is a thin-film RF bipolar amplifier using lossless feedback for optimum noise figure and high dynamic range, and |
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PP-38 | |
SN62PRMAB3Contextual Info: H Avantek Products Thin-Film Cascadable Amplifier 10 to 500 MHz Technical Data UTO/UTC/PPA 544 Series Features Description Pin Configuration • Frequency Range: 10 to 500␣MHz The 544 Series is a thin-film RF bipolar amplifier using lossless feedback for optimum noise figure |
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500MHz PP-38 5963-3232E 5963-2536E SN62PRMAB3 | |
0709sContextual Info: 2SC4842 SILICQN NPN EPITAXIAL PLANAR TYPE TRANSISTOR U nit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. N F = l.ldB , |S2le|2= 14dB f=lGHz 2 1 J:0 .1 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage |
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2SC4842 20niA 0709s | |
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range |
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2SC5006 2SC5006 | |
2SC5006
Abstract: 2SC5006-T1 "Small Signal Amplifiers" P1038 TD-2399
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2SC5006 2SC5006 2SC5006-T1 "Small Signal Amplifiers" P1038 TD-2399 | |
Contextual Info: TOSHIBA 2SC4322 Transistor U n it in m m i-0 5 2 5 -0 3 -0.25 1.5 - 0 . 1 5 , Silicon NPN Epitaxial Planar Type VHF ~ UHF Band Low Noise Amplifier Applications - o o o Egi F e a tu re s • Low Noise Figure, High Gain + • NF = 1 ,8dB, IS21ei2 = 7.5dB f = 2GHz |
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2SC4322 IS21ei2 | |
TP3053
Abstract: 26B01 tp3057 tp3057n 0z2 marking
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TP3054 TP3057 TP3057 TP3057N TP3057V TP3057V-X TP3057V TP3053 26B01 0z2 marking | |
marking 1pContextual Info: MMBT2222ATT1 Preferred Device General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–416/SC–75 package which is designed for low power surface mount applications. http://onsemi.com |
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MMBT2222ATT1 416/SC marking 1p | |
22-H-1
Abstract: 2SC484 TRANSISTOR 4841 2SC4841 NF 7513
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2SC4841 22-H-1 2SC484 TRANSISTOR 4841 2SC4841 NF 7513 | |
Contextual Info: W hnl H EW LETT mL'fLMP A C K A R D 0.5 - 6 GHz Low Noise GaAs MMIC Amplifier Technical Data MGA-86563 Features • Ultra-Miniature Package • Internally Biased, Single +5 V Supply 14 mA • 1.6 dB Noise Figure at 2.4 GHz • 21.8 dB Gain at 2.4 GHz • +3.1 dBm PldB at 2.4 GHz |
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MGA-86563 OT-363 MGA-86563 MGA-86563-TR1 MGA-86563-BLK OT-363/SC-70) DG143S4 | |
TP3020
Abstract: TP3064WM-X TP3067n AN370
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TP3064 TP3067 TP3064 TP305X -law-TP3064 -law-TP3067 9-Aug-2002] TP3020 TP3064WM-X TP3067n AN370 | |
Contextual Info: TP3064 TP3067 ‘‘Enhanced’’ Serial Interface CMOS CODEC Filter COMBO General Description Features The TP3064 m-law and TP3067 (A-law) are monolithic PCM CODEC Filters utilizing the A D and D A conversion architecture shown in Figure 1 and a serial PCM interface |
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TP3064 TP3067 TP3064 TP305X AN-370 -law-TP3064 -law-TP3067 9-Aug-2002] allot/20aug2002/TP3064 | |
gaas fet markingContextual Info: In fineon •i c h r t l o g ifci CMH192 GaAs MMIC Target Data Sheet • High-Linearity, PCS LNA/Mixer 1C for use in US and Korean band CDMA Mobile Phones • Integrated bypass switch for LNA • GaAs PHEMT Process • Leadless 3.5 x 3.5 mm. SMT package • LO - Input power range: - 7.0 to 0 dBm |
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CMH192 Q62705-K0608 P-VQFN-20 gaas fet marking | |
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marking package 545 amplifier
Abstract: marking 544 low noise amplifier 544 mmic MMIC 545 smt a1 transistor AMOBP1575P02 AMOBP1575P02-A1 AMOTECH marking 544 amplifier marking package 545 mmic
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HMC548LP3 548LP3E HMC548LP3E HMC548LP3 marking package 545 amplifier marking 544 low noise amplifier 544 mmic MMIC 545 smt a1 transistor AMOBP1575P02 AMOBP1575P02-A1 AMOTECH marking 544 amplifier marking package 545 mmic | |
Contextual Info: HMC548LP3 / 548LP3E v02.0706 AMPLIFIERS - SMT 5 SiGe HBT MMIC LOW NOISE AMPLIFIER, 1.2 - 3.0 GHz Typical Applications Features The HMC548LP3 / HMC548LP3E is ideal for: Single Supply: Vcc = +5V • Automotive Telematics Low Noise Figure: 1.3 dB • GPS Antenna Modules / Boosters |
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HMC548LP3 548LP3E HMC548LP3E HMC548LP3 | |
nec 2532
Abstract: NEC JAPAN 282 110 01 NEC 282 185 01 816-102 2SC5014 2SC5014-T1 2SC5014-T2 NEC 2134 transistor
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2SC5014 2SC5014) 2SC5014-T2 nec 2532 NEC JAPAN 282 110 01 NEC 282 185 01 816-102 2SC5014 2SC5014-T1 2SC5014-T2 NEC 2134 transistor | |
Contextual Info: GaAs MMIC CMH 192 Target Data Sheet • High-Linearity, PCS LNA/Mixer IC for use in US and Korean band CDMA Mobile Phones • Integrated bypass switch for LNA • GaAs PHEMT Process • Leadless 3.5 x 3.5 mm. SMT package • LO - Input power range: – 7.0 to 0 dBm |
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P-VQFN-20-3 Q62705-K0608 P-VQFN-20 EHA07523 GVQ09290 | |
NE42484C
Abstract: 2608 surface mount transistor NE42484C-T1 Ga FET marking k C band FET transistor s-parameters L to Ku BAND LOW NOISE AMPLIFIER NEC Ga FET marking C 1S1220 THE TRANSISTOR MANUAL (JAPANESE) 1993 nec gaas fet marking
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NE42484C NE42484C NE42484C-SL 2608 surface mount transistor NE42484C-T1 Ga FET marking k C band FET transistor s-parameters L to Ku BAND LOW NOISE AMPLIFIER NEC Ga FET marking C 1S1220 THE TRANSISTOR MANUAL (JAPANESE) 1993 nec gaas fet marking | |
transistor NEC D 882 p
Abstract: transistor NEC b 882 p transistor NEC 882 p transistor NEC b 882 nec d 882 p transistor nec 358 amplifier transistor NEC D 587 34077 6069 marking
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2SC5012 2SC5012-T1 2SC5012-T2 transistor NEC D 882 p transistor NEC b 882 p transistor NEC 882 p transistor NEC b 882 nec d 882 p transistor nec 358 amplifier transistor NEC D 587 34077 6069 marking | |
NEC 2532 n 749
Abstract: NEC 2532 PT1060 transistor NEC D 822 P transistor NEC D 587 NEC 2134 transistor transistor c 6091 transistor sp 772 SP 2822
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2SC5014 2SC5014-T1 2SC5014-T2 2SC5014) NEC 2532 n 749 NEC 2532 PT1060 transistor NEC D 822 P transistor NEC D 587 NEC 2134 transistor transistor c 6091 transistor sp 772 SP 2822 | |
nec 2412
Abstract: transistor NEC 882 p 2412 NEC 2SC5012-T1 2SC5012 2SC5012-T2 NEC 2403 106 NEC 2403 545 TD-2412 nec 2702
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2SC5012 2SC5012-T1 2SC5012-T2 nec 2412 transistor NEC 882 p 2412 NEC 2SC5012-T1 2SC5012 2SC5012-T2 NEC 2403 106 NEC 2403 545 TD-2412 nec 2702 | |
BFR96
Abstract: BFR96TS B 1359
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BFR96TS BFR96TS D-74025 31-Oct-97 BFR96 B 1359 | |
BFR96TSContextual Info: BFR96TS Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure |
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BFR96TS BFR96TS D-74025 22-Jan-01 |