MARKING 544 LOW NOISE AMPLIFIER Search Results

SMA 905 Connector Dimensions

Abstract: c1137
Contextual Info: Thin-Film Cascadable Amplifier 10 to 500 MHz Technical Data UTO/UTC 544 Series Features Description Pin Configuration • Frequency Range: 10 to 500 MHz The 544 Series is a thin-film RF bipolar amplifier using lossless feedback for optimum noise figure and high dynamic range, and

Contextual Info: Thin-Film Cascadable Amplifier 10 to 500 MHz Technical Data UTO/UTC 544 Series Features Description Pin Configuration • Frequency Range: 10 to 500 MHz The 544 Series is a thin-film RF bipolar amplifier using lossless feedback for optimum noise figure and high dynamic range, and

SN62PRMAB3

Contextual Info: H Avantek Products Thin-Film Cascadable Amplifier 10 to 500 MHz Technical Data UTO/UTC/PPA 544 Series Features Description Pin Configuration • Frequency Range: 10 to 500␣MHz The 544 Series is a thin-film RF bipolar amplifier using lossless feedback for optimum noise figure

0709s

Contextual Info: 2SC4842 SILICQN NPN EPITAXIAL PLANAR TYPE TRANSISTOR U nit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. N F = l.ldB , |S2le|2= 14dB f=lGHz 2 1 J:0 .1 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range

2SC5006

Abstract: 2SC5006-T1 "Small Signal Amplifiers" P1038 TD-2399
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range

Contextual Info: TOSHIBA 2SC4322 Transistor U n it in m m i-0 5 2 5 -0 3 -0.25 1.5 - 0 . 1 5 , Silicon NPN Epitaxial Planar Type VHF ~ UHF Band Low Noise Amplifier Applications - o o o Egi F e a tu re s • Low Noise Figure, High Gain + • NF = 1 ,8dB, IS21ei2 = 7.5dB f = 2GHz

TP3053

Abstract: 26B01 tp3057 tp3057n 0z2 marking
Contextual Info: TP3054 TP3057 ‘‘Enhanced’’ Serial Interface CODEC Filter COMBO Family General Description Features The TP3054 TP3057 family consists of m-law and A-law monolithic PCM CODEC filters utilizing the A D and D A conversion architecture shown in Figure 1 and a serial PCM

marking 1p

Contextual Info: MMBT2222ATT1 Preferred Device General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–416/SC–75 package which is designed for low power surface mount applications. http://onsemi.com

22-H-1

Abstract: 2SC484 TRANSISTOR 4841 2SC4841 NF 7513
Contextual Info: TOSHIBA 2SC4841 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4841 V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. . N F = 1.8dB, |S2 iel2 = 8.5dB f = 2GHz MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC RATING

Contextual Info: W hnl H EW LETT mL'fLMP A C K A R D 0.5 - 6 GHz Low Noise GaAs MMIC Amplifier Technical Data MGA-86563 Features • Ultra-Miniature Package • Internally Biased, Single +5 V Supply 14 mA • 1.6 dB Noise Figure at 2.4 GHz • 21.8 dB Gain at 2.4 GHz • +3.1 dBm PldB at 2.4 GHz

TP3020

Abstract: TP3064WM-X TP3067n AN370
Contextual Info: TP3064 TP3067 ‘‘Enhanced’’ Serial Interface CMOS CODEC Filter COMBO General Description Features The TP3064 m-law and TP3067 (A-law) are monolithic PCM CODEC Filters utilizing the A D and D A conversion architecture shown in Figure 1 and a serial PCM interface

Contextual Info: TP3064 TP3067 ‘‘Enhanced’’ Serial Interface CMOS CODEC Filter COMBO General Description Features The TP3064 m-law and TP3067 (A-law) are monolithic PCM CODEC Filters utilizing the A D and D A conversion architecture shown in Figure 1 and a serial PCM interface

gaas fet marking

Contextual Info: In fineon •i c h r t l o g ifci CMH192 GaAs MMIC Target Data Sheet • High-Linearity, PCS LNA/Mixer 1C for use in US and Korean band CDMA Mobile Phones • Integrated bypass switch for LNA • GaAs PHEMT Process • Leadless 3.5 x 3.5 mm. SMT package • LO - Input power range: - 7.0 to 0 dBm

marking package 545 amplifier

Abstract: marking 544 low noise amplifier 544 mmic MMIC 545 smt a1 transistor AMOBP1575P02 AMOBP1575P02-A1 AMOTECH marking 544 amplifier marking package 545 mmic
Contextual Info: HMC548LP3 / 548LP3E v00.0406 AMPLIFIERS - SMT 5 SiGe HBT MMIC LOW NOISE AMPLIFIER, 1.2 - 3.0 GHz Typical Applications Features The HMC548LP3 / HMC548LP3E is ideal for: Single Supply: Vcc = +5V • Automotive Telematics Low Noise Figure: 1.3 dB • GPS Antenna Modules / Boosters

Contextual Info: HMC548LP3 / 548LP3E v02.0706 AMPLIFIERS - SMT 5 SiGe HBT MMIC LOW NOISE AMPLIFIER, 1.2 - 3.0 GHz Typical Applications Features The HMC548LP3 / HMC548LP3E is ideal for: Single Supply: Vcc = +5V • Automotive Telematics Low Noise Figure: 1.3 dB • GPS Antenna Modules / Boosters

nec 2532

Abstract: NEC JAPAN 282 110 01 NEC 282 185 01 816-102 2SC5014 2SC5014-T1 2SC5014-T2 NEC 2134 transistor
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fT = 12 GHz TYP. in millimeters • Low Noise, High Gain

Contextual Info: GaAs MMIC CMH 192 Target Data Sheet • High-Linearity, PCS LNA/Mixer IC for use in US and Korean band CDMA Mobile Phones • Integrated bypass switch for LNA • GaAs PHEMT Process • Leadless 3.5 x 3.5 mm. SMT package • LO - Input power range: – 7.0 to 0 dBm

NE42484C

Abstract: 2608 surface mount transistor NE42484C-T1 Ga FET marking k C band FET transistor s-parameters L to Ku BAND LOW NOISE AMPLIFIER NEC Ga FET marking C 1S1220 THE TRANSISTOR MANUAL (JAPANESE) 1993 nec gaas fet marking
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE42484C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit : mm The NE42484C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent

transistor NEC D 882 p

Abstract: transistor NEC b 882 p transistor NEC 882 p transistor NEC b 882 nec d 882 p transistor nec 358 amplifier transistor NEC D 587 34077 6069 marking
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fr = 9 GHz TYP. • Low Noise, High Gain •

NEC 2532 n 749

Abstract: NEC 2532 PT1060 transistor NEC D 822 P transistor NEC D 587 NEC 2134 transistor transistor c 6091 transistor sp 772 SP 2822
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Small Package • High Gain Bandwidth Product fr = 12 GHz TYP. • Low Noise, High Gain • Low Voltage Operation

nec 2412

Abstract: transistor NEC 882 p 2412 NEC 2SC5012-T1 2SC5012 2SC5012-T2 NEC 2403 106 NEC 2403 545 TD-2412 nec 2702
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fT = 9 GHz TYP. in millimeters 2.1 ± 0.2 1.25 ± 0.1

BFR96

Abstract: BFR96TS B 1359
Contextual Info: BFR96TS Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency

BFR96TS

Contextual Info: BFR96TS Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure