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    MARKING 544 LOW NOISE AMPLIFIER Search Results

    MARKING 544 LOW NOISE AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CLC425A/BPA
    Rochester Electronics LLC CLC425 - Op Amp, Wideband, Low-Noise - Dual marked (5962-9325901MPA) PDF Buy
    LM1536J/883
    Rochester Electronics LLC LM1536 - Operational Amplifier - Dual marked (7800304PA) PDF Buy
    LM747A/BCA
    Rochester Electronics LLC LM747A/BCA - General Purpose Operational Amplifier, Dual marked (M38510/10102BCA) PDF Buy
    LM7709AH/883
    Rochester Electronics LLC LM7709 - OP AMP, GENERAL PURPOSE - Dual marked (7800701GA) PDF Buy
    LM7709AW/883
    Rochester Electronics LLC LM7709 - OP AMP, GENERAL PURPOSE - Dual marked (7800701HA) PDF Buy

    MARKING 544 LOW NOISE AMPLIFIER Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Thin-Film Cascadable Amplifier 10 to 500 MHz Technical Data UTO/UTC 544 Series Features Description Pin Configuration • Frequency Range: 10 to 500 MHz The 544 Series is a thin-film RF bipolar amplifier using lossless feedback for optimum noise figure and high dynamic range, and


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    PP-38 PDF

    SN62PRMAB3

    Contextual Info: H Avantek Products Thin-Film Cascadable Amplifier 10 to 500 MHz Technical Data UTO/UTC/PPA 544 Series Features Description Pin Configuration • Frequency Range: 10 to 500␣MHz The 544 Series is a thin-film RF bipolar amplifier using lossless feedback for optimum noise figure


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    500MHz PP-38 5963-3232E 5963-2536E SN62PRMAB3 PDF

    0709s

    Contextual Info: 2SC4842 SILICQN NPN EPITAXIAL PLANAR TYPE TRANSISTOR U nit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. N F = l.ldB , |S2le|2= 14dB f=lGHz 2 1 J:0 .1 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage


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    2SC4842 20niA 0709s PDF

    Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range


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    2SC5006 2SC5006 PDF

    2SC5006

    Abstract: 2SC5006-T1 "Small Signal Amplifiers" P1038 TD-2399
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range


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    2SC5006 2SC5006 2SC5006-T1 "Small Signal Amplifiers" P1038 TD-2399 PDF

    Contextual Info: TOSHIBA 2SC4322 Transistor U n it in m m i-0 5 2 5 -0 3 -0.25 1.5 - 0 . 1 5 , Silicon NPN Epitaxial Planar Type VHF ~ UHF Band Low Noise Amplifier Applications - o o o Egi F e a tu re s • Low Noise Figure, High Gain + • NF = 1 ,8dB, IS21ei2 = 7.5dB f = 2GHz


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    2SC4322 IS21ei2 PDF

    TP3053

    Abstract: 26B01 tp3057 tp3057n 0z2 marking
    Contextual Info: TP3054 TP3057 ‘‘Enhanced’’ Serial Interface CODEC Filter COMBO Family General Description Features The TP3054 TP3057 family consists of m-law and A-law monolithic PCM CODEC filters utilizing the A D and D A conversion architecture shown in Figure 1 and a serial PCM


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    TP3054 TP3057 TP3057 TP3057N TP3057V TP3057V-X TP3057V TP3053 26B01 0z2 marking PDF

    marking 1p

    Contextual Info: MMBT2222ATT1 Preferred Device General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–416/SC–75 package which is designed for low power surface mount applications. http://onsemi.com


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    MMBT2222ATT1 416/SC marking 1p PDF

    22-H-1

    Abstract: 2SC484 TRANSISTOR 4841 2SC4841 NF 7513
    Contextual Info: TOSHIBA 2SC4841 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4841 V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. . N F = 1.8dB, |S2 iel2 = 8.5dB f = 2GHz MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC RATING


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    2SC4841 22-H-1 2SC484 TRANSISTOR 4841 2SC4841 NF 7513 PDF

    Contextual Info: W hnl H EW LETT mL'fLMP A C K A R D 0.5 - 6 GHz Low Noise GaAs MMIC Amplifier Technical Data MGA-86563 Features • Ultra-Miniature Package • Internally Biased, Single +5 V Supply 14 mA • 1.6 dB Noise Figure at 2.4 GHz • 21.8 dB Gain at 2.4 GHz • +3.1 dBm PldB at 2.4 GHz


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    MGA-86563 OT-363 MGA-86563 MGA-86563-TR1 MGA-86563-BLK OT-363/SC-70) DG143S4 PDF

    TP3020

    Abstract: TP3064WM-X TP3067n AN370
    Contextual Info: TP3064 TP3067 ‘‘Enhanced’’ Serial Interface CMOS CODEC Filter COMBO General Description Features The TP3064 m-law and TP3067 (A-law) are monolithic PCM CODEC Filters utilizing the A D and D A conversion architecture shown in Figure 1 and a serial PCM interface


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    TP3064 TP3067 TP3064 TP305X -law-TP3064 -law-TP3067 9-Aug-2002] TP3020 TP3064WM-X TP3067n AN370 PDF

    Contextual Info: TP3064 TP3067 ‘‘Enhanced’’ Serial Interface CMOS CODEC Filter COMBO General Description Features The TP3064 m-law and TP3067 (A-law) are monolithic PCM CODEC Filters utilizing the A D and D A conversion architecture shown in Figure 1 and a serial PCM interface


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    TP3064 TP3067 TP3064 TP305X AN-370 -law-TP3064 -law-TP3067 9-Aug-2002] allot/20aug2002/TP3064 PDF

    gaas fet marking

    Contextual Info: In fineon •i c h r t l o g ifci CMH192 GaAs MMIC Target Data Sheet • High-Linearity, PCS LNA/Mixer 1C for use in US and Korean band CDMA Mobile Phones • Integrated bypass switch for LNA • GaAs PHEMT Process • Leadless 3.5 x 3.5 mm. SMT package • LO - Input power range: - 7.0 to 0 dBm


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    CMH192 Q62705-K0608 P-VQFN-20 gaas fet marking PDF

    Burr Brown part marking

    Abstract: OPA4243 OPA4243EA
    Contextual Info: B U R R - BROW N n ^ OPA4243 n For most current data sheet and other product information, visit www.burr-brown.com Quad OPERATIONAL AMPLIFIER AT/croPOWER, Single-Supply FEATURES DESCRIPTION • MICRO-SIZE, TSSOP PACKAGE The OPA4243 is a four-channel op amp specifically


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    OPA4243 45fiA/chan 430kHz OPA4243 Burr Brown part marking OPA4243EA PDF

    Contextual Info: HMC548LP3 / 548LP3E v02.0706 AMPLIFIERS - SMT 5 SiGe HBT MMIC LOW NOISE AMPLIFIER, 1.2 - 3.0 GHz Typical Applications Features The HMC548LP3 / HMC548LP3E is ideal for: Single Supply: Vcc = +5V • Automotive Telematics Low Noise Figure: 1.3 dB • GPS Antenna Modules / Boosters


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    HMC548LP3 548LP3E HMC548LP3E HMC548LP3 PDF

    nec 2532

    Abstract: NEC JAPAN 282 110 01 NEC 282 185 01 816-102 2SC5014 2SC5014-T1 2SC5014-T2 NEC 2134 transistor
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fT = 12 GHz TYP. in millimeters • Low Noise, High Gain


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    2SC5014 2SC5014) 2SC5014-T2 nec 2532 NEC JAPAN 282 110 01 NEC 282 185 01 816-102 2SC5014 2SC5014-T1 2SC5014-T2 NEC 2134 transistor PDF

    Contextual Info: GaAs MMIC CMH 192 Target Data Sheet • High-Linearity, PCS LNA/Mixer IC for use in US and Korean band CDMA Mobile Phones • Integrated bypass switch for LNA • GaAs PHEMT Process • Leadless 3.5 x 3.5 mm. SMT package • LO - Input power range: – 7.0 to 0 dBm


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    P-VQFN-20-3 Q62705-K0608 P-VQFN-20 EHA07523 GVQ09290 PDF

    transistor NEC D 882 p

    Abstract: transistor NEC b 882 p transistor NEC 882 p transistor NEC b 882 nec d 882 p transistor nec 358 amplifier transistor NEC D 587 34077 6069 marking
    Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fr = 9 GHz TYP. • Low Noise, High Gain •


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    2SC5012 2SC5012-T1 2SC5012-T2 transistor NEC D 882 p transistor NEC b 882 p transistor NEC 882 p transistor NEC b 882 nec d 882 p transistor nec 358 amplifier transistor NEC D 587 34077 6069 marking PDF

    NEC 2532 n 749

    Abstract: NEC 2532 PT1060 transistor NEC D 822 P transistor NEC D 587 NEC 2134 transistor transistor c 6091 transistor sp 772 SP 2822
    Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Small Package • High Gain Bandwidth Product fr = 12 GHz TYP. • Low Noise, High Gain • Low Voltage Operation


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    2SC5014 2SC5014-T1 2SC5014-T2 2SC5014) NEC 2532 n 749 NEC 2532 PT1060 transistor NEC D 822 P transistor NEC D 587 NEC 2134 transistor transistor c 6091 transistor sp 772 SP 2822 PDF

    nec 2412

    Abstract: transistor NEC 882 p 2412 NEC 2SC5012-T1 2SC5012 2SC5012-T2 NEC 2403 106 NEC 2403 545 TD-2412 nec 2702
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fT = 9 GHz TYP. in millimeters 2.1 ± 0.2 1.25 ± 0.1


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    2SC5012 2SC5012-T1 2SC5012-T2 nec 2412 transistor NEC 882 p 2412 NEC 2SC5012-T1 2SC5012 2SC5012-T2 NEC 2403 106 NEC 2403 545 TD-2412 nec 2702 PDF

    BFR96

    Abstract: BFR96TS B 1359
    Contextual Info: BFR96TS Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency


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    BFR96TS BFR96TS D-74025 31-Oct-97 BFR96 B 1359 PDF

    BFR96TS

    Contextual Info: BFR96TS Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure


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    BFR96TS BFR96TS D-74025 22-Jan-01 PDF

    B 1359

    Abstract: BFR96TS
    Contextual Info: BFR96TS Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure


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    BFR96TS BFR96TS D-74025 22-Jan-01 B 1359 PDF

    B 1359

    Abstract: BFR96TS
    Contextual Info: BFR96TS Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure


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    BFR96TS BFR96TS D-74025 20-Jan-99 B 1359 PDF