MARKING 52 TSOP 6 Search Results

Schottky Diode 20V 5A

Abstract: Bi-Directional P-Channel mosfet IR P-Channel mosfet SPC6801 SPC6801ST6RG P-Channel MOSFET code 1A
Contextual Info: SPC6801 P-Channel Trench MOSFET with Schottky Diode DESCRIPTION The SPC6801combines the Trench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an TSOP-6P package. The Trench MOSFET is the P-Channel enhancement mode power field effect

P-Channel MOSFET code 1A

Abstract: P-channel Trench MOSFET Bi-Directional P-Channel mosfet SPC6801 SPC6801ST6RG 6P marking P-channel MOSFET VGS -25V
Contextual Info: SPC6801 P-Channel Trench MOSFET with Schottky Diode DESCRIPTION The SPC6801combines the Trench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an TSOP-6P package. The Trench MOSFET is the P-Channel enhancement mode power field effect

Contextual Info: ADVANCE M IC H D IM I M T28F800S2/M T28F008S 2 V 512K x 16, 1 MEG x 8 FLASH MEM ORY 8 MEG SVT-II , LOW POWER, SECTORED ERASE S martV oltage FEATURES PIN ASSIGNMENT (Top View) • • • • Sixteen 64K B/(32K -w ord) erase blocks Programmable sector protect

L640ML12P

Abstract: 64 fortified bga ei 306 20 64
Contextual Info: ADVANCE INFORMATION Am29LV640MH/L 64 Megabit 4 M x 16-Bit/8 M x 8-Bit MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 V for read, erase, and program operations

Contextual Info: ADVANCE MT28F161 1 MEG x 16, 2 MEG x 8 FLASH MEMORY 1 MEG x 16, 2 MEG x 8 5V/5V SECTORED ERASE FEATURES PIN ASSIGNMENT Top View • Thirty-two 64KB/(32K-word) erase blocks • Programmable sector lock • Deep Power-Down Mode: 5|lA MAX • 5V ±10% V cc and Vpp

S24C MARK

Abstract: tsop 3602 9020 8-pin SOP SIP 400B nec 1251 P100G thomson 462 t P5VP-340B3-2 J 80222 P28D-100-600A1-1
Contextual Info: Packages Plastic DIP Dual In-line Package Units in mm 8-pin plastic DIP (300mil) 8 5 1 4 14-pin plastic DIP with TAB (300mil) 14 8 1 7 20.32 MAX. 7.62 10.16 MAX. 24.60 MAX. 7.62 4.31 MAX. 6.4 0.9 MIN. 6.4 5.08 MAX. 5.08 MAX. 4.31 MAX. 2.54 0.51 MIN. 2.54

Contextual Info: ADVANCE MT28F800S2/MT28F008S2 V 512K x 16,1 MEG x 8 FLASH MEMORY FLASH MEMORY 8 MEG SVT-II , LOW POWER, SECTORED ERASE S m a r tV o lta g e FEATURES • • • • Sixteen 64KB/(32K-word) erase blocks Programmable sector protect Deep Power-Down Mode: 10(iA MAX

tsop 66

Abstract: MICRON 63 micron ddr TSOP RECEIVER general architecture of ddr sdram TSOP 66 Package MT46LC8M8TG-10 sdram pins detail
Contextual Info: ADVANCE 64 MEG: x8 DDR SDRAM MT46LC8M8 - 2 Meg x 8 x 4 banks DOUBLE DATA RATE SDRAM For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES • Internal, pipelined double data rate DDR architecture; two data accesses per clock cycle

Contextual Info: ADVANCE MT28F161 1 MEG x 16, 2 MEG x 8 FLASH MEMORY |V |IC = R O N 5V/5V SECTORED ERASE FEATURES • • • • • • • • • • PIN ASSIGNMENT Top View Thirty-two 64KB/(32K-word) erase blocks Programmable sector lock Deep Power-Down Mode: 5|iA MAX

63-Ball

Abstract: fbe063-63-ball ei 306 20 64
Contextual Info: ADVANCE INFORMATION Am29LV640M 64 Megabit 4 M x 16-Bit or 4 M x 16-Bit/8 M x 8-Bit MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation

Contextual Info: ADVANCE 64 MEG: x8 DDR SDRAM MICRON I TECHNOLOGY, INC. MT46LC8M8 - 2 Meg x 8 x 4 banks DOUBLE DATA RATE SDRAM For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES • Internal, pipelined double data rate DDR architec­

MR26T51203L

Abstract: OKI date code MR26T51203L-XXXMB
Contextual Info: PEDR26T51203L-02-03 OKI Semiconductor MR26T51203L 32M–Word x 16–Bit or 64M–Word × 8–Bit Issue Date: Jun. 17, 2003 Preliminary P2ROM FEATURES • 33,554,432-word × 16-bit/67,108,864-word × 8-bit electrically switchable configuration · 2.7 V to 3.6 V power supply

30V 20A power p MOSFET

Abstract: Transistor Mosfet N-Ch 30V SPC6602 SPC6602ST6RG
Contextual Info: SPC6602 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC6602 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state

IDT package marking

Abstract: IDT marking IDT marking TQFP IDT TOP SIDE package marking A-0410-02 IDT CODE DATE marking MQUAD pbga 144 TQFP 132 PACKAGE PDIP-48
Contextual Info: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: A-0410-02 Product Affected: Date Effective: Contact: Title: Phone #: Fax #: E-mail: 10/5/2004 DATE: All IDT Products (see attached list)

SPC6602ST6RG

Abstract: SPC6602 N and P MOSFET
Contextual Info: SPC6602 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC6602 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state

SPC6604

Abstract: SPC6604ST6RG N and P MOSFET
Contextual Info: SPC6604 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC6604 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state

SPC6601

Abstract: SPC6601ST6RG 6P marking TSOP 6 marking 52 N and P MOSFET
Contextual Info: SPC6601 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC6601 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state

TOP SIDE MARKING OF MICRON

Abstract: ba0 marking
Contextual Info: ADVANCE 64Mb: x4, x8, x16 DDR SDRAM MT46V16M4 - 4 Meg x 4 x 4 banks MT46V8M8 - 2 Meg x 8 x 4 banks MT46V4M16 - 1 Meg x 16 x 4 banks DOUBLE DATA RATE SDRAM For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html

Contextual Info: UG416S6486KSE-PHPN Data sheets can be downloaded at www.unigen.com 128M Bytes 16M x 64 bits SYNCHRONOUS DRAM MODULE PC100 SDRAM Unbuffered SODIMM based on 4 pcs 16M x 16 SDRAM with LVTTL, 4 banks & 8K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View)

Contextual Info: UG42S6428GSG-PL Data sheets can be downloaded at www.unigen.com 16M Bytes 2M x 64 bits SYNCHRONOUS DRAM MODULE PC100 SDRAM Unbuffered SODIMM based on 8 pcs 2M x 8 SDRAM with LVTTL, 2 banks & 2K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View) 144-Pin SODIMM

Contextual Info: UGM16T6686KA-PH Data sheets can be downloaded at www.unigen.com 128M Bytes 16M x 64 bits SYNCHRONOUS DRAM MODULE PC133 SDRAM Unbuffered MicroDIMM based on 4 pcs 16M x 16 SDRAM with LVTTL, 4 banks & 8K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View)

UG432S6488KSG

Contextual Info: UG432S6488KSG Data sheets can be downloaded at www.unigen.com 256M Bytes 32M x 64 bits SYNCHRONOUS DRAM MODULE PC100 SDRAM Unbuffered SODIMM based on 8 pcs 32M x 8 SDRAM with LVTTL, 4 banks & 8K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View) 144-Pin SODIMM

MARKING U1

Contextual Info: UG42S6442HSG Data sheets can be downloaded at www.unigen.com 16M Bytes 2M x 64 bits SYNCHRONOUS DRAM MODULE PC100 SDRAM Unbuffered SODIMM based on 2 pcs 2M x 32 SDRAM with LVTTL, 4 banks & 4K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View) 144-Pin SODIMM

PC100-compliant

Abstract: MT48LCxMxA2 mt48lc8m8b4 SDRAM MICRON micron x8 pc100 sdram mt48lc8m8b4tg-8e 54pin TSOP SDRAM
Contextual Info: 64Mb: x4, x8, x16 SDRAM ADDENDUM FOR B4 MT48LC16M4B4 -4 Meg x 4 x 4 banks MT48LC8M8B4 - 2 Meg x 8 x 4 banks MT48LC4M16B4 -1 Meg x 16 x 4 banks SYNCHRONOUS DRAM Refer to the Micron Web site: www.micron.com/mti/msp/html/ datasheet.html for the latest full-length data sheet this applies to.