MARKING 4A SOT23 Search Results

MARKING 4a

Abstract: BC859 .a h marking marking 4a sot23
Contextual Info: SEMICONDUCTOR BC859 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 4A 1 2 Item Marking Description Device Mark 4 BC859 hFE Grade A A, B * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

Mosfet

Abstract: SSF3051G7
Contextual Info: SSF3051G7 30V P-Channel MOSFET Main Product Characteristics D RDS on 3051G7 VDSS -30V 45mohm(typ.) G S ID -4A Marking and Pin SOT23-6 Assignment Schematic Diagram Features and Benefits:       Advanced trench MOSFET process technology Special designed for buttery protection, load

BC859 smd

Abstract: BC859A BC859B BC859C BC860 BC860A BC860B BC860C BC859
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BC859 = 4D BC859A = 4A BC859B = 4B BC859C = 4C BC860 = 4H BC860A = 4E

Mosfet

Abstract: SSF2341E marking 2341E 2341E marking 4a sot23
Contextual Info: SSF2341E 20V P-Channel MOSFET Main Product Characteristics VDSS -20V RDS on 37mΩ (typ.) ID -4A ① SOT-23 Marking and Pin Schematic Diagram Assignment Features and Benefits   Advanced MOSFET process technology Special designed for PWM, load switching and

bc860

Abstract: bc858 BC857 BC857A BC857B BC858A BC858B BC859A BC859B BC860A
Contextual Info: BC857/BC858 BC859/BC860 SMALL SIGNAL PNP TRANSISTORS • ■ ■ ■ Type Marking BC857A 3E BC857B 3F BC858A 3J BC858B 3K BC859A 4A BC859B 4B BC860A 4E BC860B 4F SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING

BC859

Abstract: BC859A BC859B BC859C BC860 BC860A BC860B BC860C
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BC859 = 4D BC859A = 4A BC859B = 4B BC859C = 4C BC860 = 4H BC860A = 4E BC860B = 4F

marking 1d4

Contextual Info: A Product Line of Diodes Incorporated ZXTN07045EFF 45V NPN MEDIUM POWER PLANAR TRANSISTOR IN SOT23F Features and Benefits Mechanical Data • • • • • • • • • • • • • BVCEO > 45V IC = 4A Continuous Collector Current Low Saturation Voltage VCE sat < 80mV @ 1A

marking 1d4

Contextual Info: A Product Line of Diodes Incorporated ZXTN07045EFF 45V NPN MEDIUM POWER PLANAR TRANSISTOR IN SOT23F Features and Benefits Mechanical Data • • • • • • • • • • • • • BVCEO > 45V IC = 4A Continuous Collector Current Low Saturation Voltage VCE sat < 80mV @ 1A

IC 7495 pin configuration

Abstract: ic 7495 ZXTN25040DFH 50mmx50mm ZXTP25040DFH
Contextual Info: A Product Line of Diodes Incorporated ZXTN25040DFH 40V NPN MEDIUM POWER PLANAR TRANSISTOR IN SOT23 Features and Benefits Mechanical Data • • • • • • • • • • • • • • • BVCEO > 40V IC = 4A Continuous Collector Current Low Saturation Voltage VCE sat < 55mV @ 1A

Contextual Info: A Product Line of Diodes Incorporated ZXTN25040DFH 40V NPN MEDIUM POWER PLANAR TRANSISTOR IN SOT23 Features and Benefits Mechanical Data • • • • • • • • • • • • • • • BVCEO > 40V IC = 4A Continuous Collector Current Low Saturation Voltage VCE sat < 55mV @ 1A

marking 12W SOT23

Abstract: ZXTN2020F
Contextual Info: ZXTN2020F 100V, SOT23, NPN medium power transistor Summary V BR CEV > 160V, V(BR)CEO > 100V IC(cont) = 4A RCE(sat) = 30m⍀ typical VCE(sat) < 50mV @ 1A PD = 1.2W Complementary part number: ZXTP2029F Description Advanced process capability and package design have been used to

OUTLINE DIMENSIONS in inche

Abstract: marking 951 12W MARKING sot23 ZXTN2018F ZXTP2027F ZXTP2027FTA
Contextual Info: ZXTP2027F 60V, SOT23, PNP medium power transistor Summary V BR CEV > -100V, V(BR)CEO > -60V IC(cont) = -4A RCE(sat) = 31 m⍀ typical VCE(sat) < -60 mV @ -1A PD = 1.2W Complementary part number: ZXTN2018F Description Advanced process capability and package design have been used to

marking 12W SOT23

Abstract: ZXTN2020F ZXTN2020FTA ZXTP2029F plc lamp 12W MARKING sot23
Contextual Info: ZXTN2020F 100V, SOT23, NPN medium power transistor Summary V BR CEV > 160V, V(BR)CEO > 100V IC(cont) = 4A RCE(sat) = 30m⍀ typical VCE(sat) < 50mV @ 1A PD = 1.2W Complementary part number: ZXTP2029F Description Advanced process capability and package design have been used to

Contextual Info: ZXTN2020F 100V, SOT23, NPN medium power transistor Summary V BR CEV > 160V, V(BR)CEO > 100V IC(cont) = 4A RCE(sat) = 30m⍀ typical VCE(sat) < 50mV @ 1A PD = 1.2W Complementary part number: ZXTP2029F Description Advanced process capability and package design have been used to

marking 1A3

Abstract: ZXTN25020DFH ZXTP25020DFH ZXTP25020DFHTA
Contextual Info: ZXTP25020DFH 20V, SOT23, PNP medium power transistor Summary BVCEO > -20V BVECO > -4V IC cont = 4A VCE(sat) < 60 mV @ 1A RCE(sat) = 39 m⍀ PD = 1.25W Complementary part number ZXTN25020DFH Description C Advanced process capability and package design have been used to

marking 12W SOT23

Abstract: 12W MARKING sot23 IB100mA Marking 853
Contextual Info: ZXTN2020F 100V, SOT23, NPN medium power transistor Summary V BR CEV > 160V, V(BR)CEO > 100V IC(cont) = 4A RCE(sat) = 30m⍀ typical VCE(sat) < 50mV @ 1A PD = 1.2W Complementary part number: ZXTP2029F Description Advanced process capability and package design have been used to

ZXTN25015DFH

Abstract: ZXTP25015DFH ZXTP25015DFHTA
Contextual Info: ZXTP25015DFH 15V, SOT23, PNP medium power transistor Summary BVCEO > -15V BVECO > -3V IC cont = -4A RCE(sat) = 33m⍀ VCE(sat) < -55mV @ 1A PD = 1.25W Complementary part number ZXTN25015DFH Description C Advanced process capability and package design have been used to

ZXTN25015DFH

Abstract: ZXTP25015DFH ZXTP25015DFHTA
Contextual Info: ZXTP25015DFH 15V, SOT23, PNP medium power transistor Summary BVCEO > -15V BVECO > -3V IC cont = -4A RCE(sat) = 33m⍀ VCE(sat) < -55mV @ 1A PD = 1.25W Complementary part number ZXTN25015DFH Description C Advanced process capability and package design have been used to

ZXTN25020CFH

Abstract: ZXTP25020CFH ZXTP25020CFHTA small driver igbt
Contextual Info: ZXTP25020CFH 20V, SOT23, PNP medium power transistor Summary BVCEO > -20V BVECO > -7V IC cont = -4A RCE(sat) = 34m⍀ VCE(sat) < -55mV @ 1A PD = 1.25W Complementary part number ZXTN25020CFH Description C Advanced process capability and package design have been used to

Contextual Info: ZXTN25050DFH 50V, SOT23, NPN medium power transistor Summary BVCEX > 150V BVCEO > 50V BVECO > 5V IC cont = 4A VCE(sat) < 60mV @ 1A RCE(sat) = 40m⍀ PD = 1.25W Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline

ZXTN25040DFH

Abstract: ZXTN25040DFHTA ZXTP25040DFH
Contextual Info: ZXTN25040DFH 40V, SOT23, NPN medium power transistor Summary BVCEX > 130V BVCEO > 40V BVECO > 6V IC cont = 4A VCE(sat) < 55 mV @ 1A RCE(sat) = 35 m⍀ PD = 1.25W Complementary part number ZXTP25040DFH Description C Advanced process capability and package design have been used to

zxtn25050dfhta

Contextual Info: ZXTN25050DFH 50V, SOT23, NPN medium power transistor Summary BVCEX > 150V BVCEO > 50V BVECO > 5V IC cont = 4A VCE(sat) < 60mV @ 1A RCE(sat) = 40m⍀ PD = 1.25W Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline

TRANSISTOR marking 489 code

Contextual Info: A Product Line of Diodes Incorporated FMMT489 30V NPN MEDIUM POWER TRANSISTOR IN SOT23 Features Mechanical Data • BVCEO > 30V  Case: SOT-23  IC = 1A high Continuous Collector Current  Case material: Molded Plastic. “Green” Molding Compound.

ZXTN25020BFH

Abstract: ZXTP25020BFH ZXTP25020BFHTA
Contextual Info: ZXTP25020BFH 20V, SOT23, PNP medium power transistor Summary BVCEX > -40V BVCEO > -20V BVECO > -7V IC cont = -4A RCE(sat) = 32 m⍀ VCE(sat) < -60mV @ 1A PD = 1.25W Complementary part number ZXTN25020BFH Description C Advanced process capability and package design have been used to