MARKING 49A Search Results

chip resistor marking

Abstract: NRC06FxxxxTR 604K-Ohm marking 53d marking 34x NRC06F1273TR 511K-Ohm NRC06F21R0TR NRC06F20R5TR NRC06F2000TR
Contextual Info: NIC COMPONENTS CORP. www.nicccomp.com NRC06FxxxxTR 0603 Size Thick Film Chip Resistor Marking Guide 3-Digit Marking Codes for +/-1% F tolerance E96 Values RESISTANCE VALUE NIC P/N 3 DIGIT MARKING 10.0 Ohm NRC06F10R0TR 01X 10.2 Ohm NRC06F10R2TR 02X 10.5 Ohm

FFM107

Abstract: FFM101 FFM105 FFM102 FFM103 FFM104 FFM106
Contextual Info: LESHAN RADIO COMPANY, LTD. FFM101 – FFM107 1A 1A FAST RECOVERY SMA DIODES TYPE Marking FFM101 FFM102 FFM103 FFM104 FFM105 FFM106 FFM107 FF1 FF2 FF3 FF4 FF5 FF6 FF7 50 100 200 400 600 800 1000 V F V IF (A) VRRM(V) 1.3 1.0 IRMI(µA) IP8M(A) 5.0 Package Dimensions

75 517

Contextual Info: SOLDER SUFFIX CUSTOMER TERMINAL RoHS LEAD Pb -FREE LF3 SnIOOX Yes Yes f - 7/|=om p"°n| fczJW E-M ID C O M MARKING DETAIL ON TOP SU R F A C E OF SH IELD / I * = " ELECTRICAL SPECIFICATIONS <D 25°C u n less otherw ise n o ted : \ jT lki û K ) LJ \ l SOLDER SUFFIX

Contextual Info: DMT6008LFG N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TC = +25°C 7.5mΩ @ VGS = 10V 60A 11.5mΩ @ VGS = 4.5V 49A V(BR)DSS NEW PRODUCT ADVANCE INFORMATION NEW PRODUCT 60V Features and Benefits • Low RDS(ON) – Ensures on State Losses Are Minimized

217a marking

Contextual Info: FDMS8460 N-Channel Power Trench MOSFET 40V, 49A, 2.2m: Features General Description „ Max rDS on = 2.2m: at VGS = 10V, ID = 25A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and

Contextual Info: FDMS8333 N-Channel Power Trench MOSFET 40V, 49A, 2.2m: Features General Description „ Max rDS on = 2.2m: at VGS = 10V, ID = 25A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and

DAT02

Contextual Info: Pomona 1 0.57 14 ,4 8 8-13-99 From: OocuFACTSitm) Ph# 949-253-7438 To: 16638801932 6 :49am p. 3 of 4 Model 1661 BNC Male - One End Only - 1.06 ( 2 6 ,9 2 ) X - 60 ±.50 (± 12 ,7 0 ) " - — -i- - FEATURES: • Connector One End Only to Allow customer Modification.

FDB150N10

Abstract: marking 49a
Contextual Info: FDB150N10 tm N-Channel PowerTrench MOSFET 100V, 57A, 15mΩ Features General Description • RDS on = 12mΩ ( Typ.) @ VGS = 10V, ID = 49A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet

FDP150N10

Contextual Info: FDP150N10 tm N-Channel PowerTrench MOSFET 100V, 57A, 15mΩ Features General Description • RDS on = 12mΩ ( Typ.) @ VGS = 10V, ID = 49A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet

Contextual Info: FDP150N10 tm N-Channel PowerTrench MOSFET 100V, 57A, 15mΩ Features General Description • RDS on = 12mΩ ( Typ.) @ VGS = 10V, ID = 49A • Fast switching speed • Low gate charge This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been

pd25a

Abstract: FDMS8460
Contextual Info: FDMS8460 tm N-Channel Power Trench MOSFET 40V, 49A, 2.2mΩ Features General Description „ Max rDS on = 2.2mΩ at VGS = 10V, ID = 25A „ Advanced Package and Silicon combination for low rDS(on) This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has

FDMS3500

Contextual Info: FDMS3500 tm N-Channel Power Trench MOSFET 75V, 49A, 14.5mΩ Features General Description „ Max rDS on = 14.5mΩ at VGS = 10V, ID = 11.5A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and

FDMS5352

Contextual Info: FDMS5352 tm N-Channel Power Trench MOSFET 60V, 49A, 6.7mΩ Features General Description „ Max rDS on = 6.7mΩ at VGS = 10V, ID = 13.6A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and

FDMS3662

Abstract: PF110F
Contextual Info: FDMS3662 tm N-Channel Power Trench MOSFET 100V, 49A, 14.8mΩ Features General Description „ Max rDS on = 14.8mΩ at VGS = 10V, ID = 8.9A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and

Fairchild Power MOSFET

Abstract: FDMS3662
Contextual Info: FDMS3662 tm N-Channel Power Trench MOSFET 100V, 49A, 14.8m: Features General Description „ Max rDS on = 14.8m: at VGS = 10V, ID = 8.9A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and

FDMS8660AS

Contextual Info: FDMS8660AS N-Channel PowerTrench SyncFET tm TM 30V, 49A, 2.1mΩ Features General Description „ Max rDS on = 2.1mΩ at VGS = 10V, ID = 28A The FDMS8660AS has been designed to minimize losses in power conversion application. Advancements in both silicon and

Contextual Info: FDMS3662 tm Trench N-Channel Power MOSFET 100V, 49A, 14.8m: Features General Description „ Max rDS on = 14.8m: at VGS = 10V, ID = 8.9A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and

Contextual Info: FDI150N10 N-Channel PowerTrench MOSFET tm 100V, 57A, 16m Features General Description • RDS on = 12m ( Typ.) @ VGS = 10V, ID = 49A • Fast switching speed • Low gate charge This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been

FDI150N10

Contextual Info: FDI150N10 tm N-Channel PowerTrench MOSFET 100V, 57A, 16m Features General Description • RDS on = 12m ( Typ.) @ VGS = 10V, ID = 49A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet

fairchild top marking

Abstract: FDMS5352 marking 123a
Contextual Info: FDMS5352 tm N-Channel Power Trench MOSFET 60V, 49A, 6.7m: Features General Description „ Max rDS on = 6.7m: at VGS = 10V, ID = 13.6A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and

surface mount IRFZ44N

Abstract: AN-994 IRFZ44N IRFZ44NL IRFZ44NS IRFZ44N APPLICATION NOTE irfz44nsl
Contextual Info: PD - 9.1315A IRFZ44NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRFZ44NS Low-profile through-hole (IRFZ44NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.022Ω G ID = 49A

Contextual Info: FDMS8460 tm Trench N-Channel Power MOSFET 40V, 49A, 2.2m: Features General Description „ Max rDS on = 2.2m: at VGS = 10V, ID = 25A „ Advanced Package and Silicon combination for low rDS(on) This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has

FDMS3500

Contextual Info: FDMS3500 tm N-Channel Power Trench MOSFET 75V, 49A, 14.5m: Features General Description „ Max rDS on = 14.5m: at VGS = 10V, ID = 11.5A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and

FDMS8460

Contextual Info: FDMS8460 tm N-Channel Power Trench MOSFET 40V, 49A, 2.2m: Features General Description „ Max rDS on = 2.2m: at VGS = 10V, ID = 25A „ Advanced Package and Silicon combination for low rDS(on) This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has