MARKING 3800 SO8 Search Results

4435a

Abstract: 9435a 4410b 9407a 9952a 9936A 9926A Sc 6200 equivalent 993-9A 8435a
Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 TYPE Marking Drain Current Static Drain to Source On Resistance Max. Gate Threshold Voltage Zero Gate Voltage Drain Current VGSS ID DC RDS(ON) @ ID / VGS VGS(th) IDSS @ VDS,VGS=0V

912I st

Abstract: 912I 275U-000U TS912 TS912AIN TS912IN 912bI
Contextual Info: TS912 Rail-to-Rail CMOS Dual Operational Amplifier • Rail-to-rail input and output voltage ranges ■ Single or dual supply operation from 2.7V to 16V ■ Extremely low input bias current: 1pA typ. ■ Low input offset voltage: 2mv max. ■ Specified for 600Ω and 100Ω loads

912I

Abstract: TS912 TS912AIN TS912IN 912I st kf656
Contextual Info: TS912 Rail-to-Rail CMOS Dual Operational Amplifier • Rail-to-rail input and output voltage ranges ■ Single or dual supply operation from 2.7V to 16V ■ Extremely low input bias current: 1pA typ. ■ Low input offset voltage: 2mV max. ■ Specified for 600Ω and 100Ω loads

Contextual Info: LF PA K 56 BUK7Y12-100E N-channel 100 V, 12 mΩ standard level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101

Contextual Info: New Product SiR814DP Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) a RDS(on) () 40 ID (A) 0.0021 at VGS = 10 V 60 0.0029 at VGS = 4.5 V 60 Qg (Typ.) 27 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 • • • •

Si7894ADP

Abstract: 42014
Contextual Info: Si7894ADP New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D 100% Rg Tested PRODUCT SUMMARY

FDS7779Z

Contextual Info: FDS7779Z 30 Volt P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers.

FDS7779Z

Contextual Info: FDS7779Z 30 Volt P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers.

4435 mosfet

Abstract: Mi 4435 MOSFET 4435 APM4435 4435 so8 4435D 4435 B Mos-Fet apm4435 4435 marking 4435
Contextual Info: APM4435 P-Channel Enhancement Mode MOSFET Features • Pin Description -30V/-8A, RDS ON = 16mΩ(typ.) @ VGS = -10V S 1 8 D Super High Density Cell Design S 2 7 D Reliable and Rugged S 3 6 D SO-8 Package G 4 5 D RDS(ON) = 24mΩ(typ.) @ VGS = -4.5V • •

4835D

Abstract: 4835 D 4835 mosfet mosfet 4835 APM4835 APM4835 mosfet 7F MARKING 4835 so-8
Contextual Info: APM4835 P-Channel Enhancement Mode MOSFET Features • Pin Description -30V/-8A, RDS ON = 16mΩ(typ.) @ VGS = -10V RDS(ON) = 24mΩ(typ.) @ VGS = -4.5V • • • Super High Density Cell Design Reliable and Rugged SO-8 Package S 1 8 D S 2 7 D S 3 6 D G

Contextual Info: Si7894ADP New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D 100% Rg Tested PRODUCT SUMMARY

Contextual Info: Si7894ADP New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D 100% Rg Tested PRODUCT SUMMARY

Si7894ADP

Abstract: Si7894ADP-T1-E3
Contextual Info: Si7894ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0036 at VGS = 10 V 25 0.0045 at VGS = 4.5 V 23 Qg (Typ.) 58 PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

SI7380ADP

Contextual Info: Si7380ADP Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID rDS(on) (W) 30 (A)a 0.003 @ VGS = 10 V 40 0.0035 @ VGS = 4.5 V 40 Qg (Typ) 54 nC D TrenchFETr Power MOSFET D PWM Optimized D New Low Thermal Resistance PowerPAKr

SI4634

Abstract: Si4634DY-T1-GE3 SI4634DY-T1-E3 Si4634DY
Contextual Info: Si4634DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0052 at VGS = 10 V 24.5 0.0067 at VGS = 4.5 V 21.7 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested

Contextual Info: Si7894ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0036 at VGS = 10 V 25 0.0045 at VGS = 4.5 V 23 Qg (Typ.) 58 PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

Contextual Info: New Product Si7634BDP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0054 at VGS = 10 V 40g 0.007 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ) 21.5 nC • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % Avalanche Tested

SI7380ADP

Contextual Info: Si7380ADP Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID rDS(on) (W) 30 (A)a 0.003 @ VGS = 10 V 40 0.0035 @ VGS = 4.5 V 40 Qg (Typ) 54 nC D TrenchFETr Power MOSFET D PWM Optimized D New Low Thermal Resistance PowerPAKr

Contextual Info: New Product Si4634DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0052 at VGS = 10 V 24.5 0.0067 at VGS = 4.5 V 21.7 VDS (V) 30 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) RoHS COMPLIANT

SI7380ADP

Contextual Info: Si7380ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.003 at VGS = 10 V 40 0.0035 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ.) 54 nC PowerPAK SO-8 • • • • Halogen-free available TrenchFET Power MOSFET PWM Optimized

Si7634BDP-T1-E3

Abstract: Si7634BDP Si7634BDP-T1-GE3
Contextual Info: New Product Si7634BDP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0054 at VGS = 10 V 40g 0.007 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 21.5 nC PowerPAK SO-8 • Notebook PC Core - Low Side - High Side 5.15 mm

Contextual Info: Si7894ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0036 at VGS = 10 V 25 0.0045 at VGS = 4.5 V 23 Qg (Typ.) 58 PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

Contextual Info: New Product SiR862DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0028 at VGS = 10 V 50 0.0035 at VGS = 4.5 V 50 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

SI7634BDP-T1-GE3

Abstract: Si7634BDP Si7634BDP-T1-E3
Contextual Info: New Product Si7634BDP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0054 at VGS = 10 V 40g 0.007 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 21.5 nC PowerPAK SO-8 • Notebook PC Core - Low Side - High Side 5.15 mm