MARKING 340G Search Results

ON semiconductor 340g

Abstract: 340g marking 340g
Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−3BPL TO−264 CASE 340G−02 ISSUE J DATE 17 DEC 2004 SCALE 1:2 Q 0.25 (0.010) −B− M T B M −T− C E U N DIM A B C D E F G H J K L N P Q R U W A 1 R 2 L 3 P K W F 2 PL G J H D 3 PL 0.25 (0.010) STYLE 1:

ON 4998

Contextual Info: SPECIFICATIONS ISA Connector EQ Series Vertical Type, Kink B/L 2.54mm [.100”] Pitch 98 Pos. Mechanical Contact Retention Force: 1.80kgf min. Mating Force: 340gf max. per Contact Pair Unmating Force: 28gf min. per Contact pair Durability: 100 Cycles Electrical

Contextual Info: SPECIFICATIONS ISA Connector EQ Series Vertical Type, Kink B/L 2.54mm [.100”] Pitch 98 Pos. Mechanical Contact Retention Force: 1.80kgf min. Mating Force: 340gf max. per Contact Pair Unmating Force: 28gf min. per Contact pair Durability: 100 Cycles Electrical

Contextual Info: SMD Schottky Barrier Rectifiers CDBA320-G Thru. CDBA3100-G Reverse Voltage: 20 to 100 Volts Forward Current: 3.0 Amp RoHS Device Halogen Free Features DO-214AC SMA -Ideal for surface mount applications. 0.177(4.50) 0.157(3.99) -Easy pick and place. -Plastic package has Underwriters Lab.

Contextual Info: SMD Schottky Barrier Rectifiers CDBA320-G Thru. CDBA3100-G Reverse Voltage: 20 to 100 Volts Forward Current: 3.0 Amp RoHS Device DO-214AC SMA Features -Ideal for surface mount applications. 0.177(4.50) 0.157(3.99) -Easy pick and place. -Plastic package has Underwriters Lab.

Contextual Info: SMD Schottky Barrier Rectifiers CDBC320-G Thru. CDBC3100-G Reverse Voltage: 20 to 100 Volts Forward Current: 3.0 Amp RoHS Device Features DO-214AB SMC -Ideal for surface mount applications. -Easy pick and place. 0.280(7.11) 0.260(6.60) -Plastic package has Underwriters Lab.

schottky marking 3100 sma

Abstract: Diode SMA marking code 15 smd diode code marking 27 35 marking code do-214ac DIODE MARKING code 14 DO214AC
Contextual Info: SMD Schottky Barrier Rectifiers CDBA320-G Thru. CDBA3100-G Reverse Voltage: 20 to 100 Volts Forward Current: 3.0 Amp RoHS Device Halogen Free Features DO-214AC SMA -Ideal for surface mount applications. 0.177(4.50) 0.157(3.99) -Easy pick and place. -Plastic package has Underwriters Lab.

marking 340G

Abstract: 340g
Contextual Info: SMD Schottky Barrier Rectifiers CDBB320-G Thru. CDBB3100-G Reverse Voltage: 20 to 100 Volts Forward Current: 3.0 Amp RoHS Device Features DO-214AA SMB -Ideal for surface mount applications. -Easy pick and place. 0.185(4.70) 0.160(4.06) -Plastic package has Underwriters Lab.

Contextual Info: SMD Schottky Barrier Rectifiers CDBB320-G Thru. CDBB3100-G Reverse Voltage: 20 to 100 Volts Forward Current: 3.0 Amp RoHS Device Features DO-214AA SMB -Ideal for surface mount applications. -Easy pick and place. 0.185(4.70) 0.160(4.06) -Plastic package has Underwriters Lab.

Contextual Info: SMD Schottky Barrier Rectifiers CDBC320-G Thru. CDBC3100-G Reverse Voltage: 20 to 100 Volts Forward Current: 3.0 Amp RoHS Device Features DO-214AB SMC -Ideal for surface mount applications. -Easy pick and place. 0.280(7.11) 0.260(6.60) -Plastic package has Underwriters Lab.

SB320-G

Abstract: SB345-G SB350-G SB360-G SB380-G SB3100-G
Contextual Info: Comchip Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB320-G Thru. SB3100-G Voltage: 20 to 100 V Current: 3.0 A RoHS Device DO-201AD Features -Low drop down voltage. 1.0 25.4 Min. -Metal-Semiconductor junction with guard ring 0.210(5.3) 0.189(4.8)

Contextual Info: Comchip Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB320-G Thru. SB3100-G Voltage: 20 to 100 V Current: 3.0 A RoHS Device DO-201AD Features -Low drop down voltage. -Metal-Semiconductor junction with guard ring 1.0 25.4 Min. 0.210(5.3) 0.189(4.8)

Contextual Info: SMD Schottky Barrier Rectifiers SMD Diodes Specialist CDBW320-G Thru. CDBW3100-G Reverse Voltage: 20 to 100 Volts Forward Current: 3.0 Amp RoHS Device SOD-123T Features 0.154 3.9 0.138(3.5) 0.012(0.3) Typ. -Ideal for surface mount applications. -Easy pick and place.

smd diode H3

Abstract: smd diode marking BM SMD MARKING CODE h3 330g smd marking CODE 32 SMD DIODE DEVICE marking H3
Contextual Info: SMD Schottky Barrier Rectifiers SMD Diodes Specialist CDBMH320-G Thru. CDBMH3100-G Reverse Voltage: 20 to 100 Volts Forward Current: 3.0 Amp RoHS Device SOD-123T Features 0.154 3.9 0.138(3.5) 0.012(0.3) Typ. -Ideal for surface mount applications. -Easy pick and place.

Contextual Info: SMD Schottky Barrier Rectifiers CDBMH320-G Thru. CDBMH3100-G Reverse Voltage: 20 to 100 Volts Forward Current: 3.0 Amp RoHS Device SOD-123T Features -Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.

SS34 DO-214AC

Abstract: 340g CDBA340-G SS34 D2 SS34 sma CDBA3100-G CDBA320-G
Contextual Info: SMD Schottky Barrier Rectifiers SMD Diodes Specialist CDBA320-G Thru. CDBA3100-G Reverse Voltage: 20 to 100 Volts Forward Current: 3.0 Amp RoHS Device Features DO-214AC SMA -Ideal for surface mount applications. -Easy pick and place. 0.177(4.50) 0.157(3.99)

Contextual Info: SMD Schottky Barrier Rectifiers SMD Diodes Specialist CDBA320-G Thru. CDBA3100-G Reverse Voltage: 20 to 100 Volts Forward Current: 3.0 Amp RoHS Device Features DO-214AC SMA -Ideal for surface mount applications. -Easy pick and place. 0.177(4.50) 0.157(3.99)

CDBA3100-G

Abstract: CDBA320-G CDBA340-G
Contextual Info: SMD Schottky Barrier Rectifiers SMD Diodes Specialist CDBA320-G Thru. CDBA3100-G Reverse Voltage: 20 to 100 Volts Forward Current: 3.0 Amp RoHS Device Features DO-214AC SMA -Ideal for surface mount applications. -Easy pick and place. 0.180(4.57) 0.160(4.06)

marking 340G

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3400 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UTC UT3400 is an N-ch enhancement MOSFET providing the customers with perfect RDS ON and low gate charge. This device can be operated with 2.5V low gate voltage.

MJL3281AG

Abstract: TO-264 home theater ic ON semiconductor 340g MJL1302A MJL1302AG MJL3281A 340G-02 marking 340G to264
Contextual Info: MJL3281A NPN MJL1302A (PNP) Preferred Devices Complementary Bipolar Power Transistors Features • • • • • • Exceptional Safe Operating Area NPN/PNP Gain Matching within 10% from 50 mA to 5 A Excellent Gain Linearity High BVCEO High Frequency Pb−Free Packages are Available

marking 340G

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3400 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UTC UT3400 is an N-ch enhancement MOSFET providing the customers with perfect RDS ON and low gate charge. This device can be operated with 2.5V low gate voltage.

MJL21194G

Abstract: MJL2119x MJL21194 MJL21193G MJL21193
Contextual Info: MJL21193, MJL21194 Preferred Device Silicon Power Transistors The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Features • Total Harmonic Distortion Characterized

ON semiconductor 340g

Contextual Info: Series PRG 150Amp • 120/240, 480, 600 Vac - AC OUTPUT • Zero Voltage and Random Turn-On Switching • Extra High Steady-State Current • Panel Mount • Internal Snubber DC CONTROL AC CONTROL MODEL NUMBERS Featuring state-of-the-art Surface Mount Technology, this SPST-NO

Contextual Info: Series PRG 150Amp • 120/240, 480 Vac - AC OUTPUT • Zero Voltage and Random Turn-On Switching • Extra High Steady-State Current • Panel Mount • Internal Snubber DC CONTROL AC CONTROL MODEL NUMBERS Featuring state-of-the-art Surface Mount Technology, this SPST-NO