MARKING 2GM X Search Results
MARKING 2GM X Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 2910/BQA |
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2910 - Microprogram Controller - Dual marked (7801701QA) |
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| MQ80C186-12/BYA |
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80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850102YA) |
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| 54L04/BDA |
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54L04 - Hex Inverter - Dual marked (M38510/02005BDA) |
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| 9936/BCA |
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9936 - Hex Inverter - Dual marked (M38510/03003BCA) |
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| 54AC86/SDA-R |
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54AC86/SDA-R - Dual marked (M38510R75202SDA) |
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MARKING 2GM X Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: MMBTA55 THRU MMBTA56 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • This device is designed for general purpose amplifier applications at collector current to 300mA Marking Code: MMBTA55=2H MMBTA56=2GM |
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MMBTA55 MMBTA56 300mA MMBTA55 MMBTA56 OT-23 | |
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Contextual Info: MCC MMBTA55 THRU MMBTA56 omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • This device is designed for general purpose amplifier applications at collector current to 300mA Marking Code: MMBTA55=2H MMBTA56=2GM |
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MMBTA55 MMBTA56 OT-23 300mA MMBTA56 | |
marking 2GM xContextual Info: MCC MMBTA55 THRU MMBTA56 omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • This device is designed for general purpose amplifier applications at collector current to 300mA Marking Code: MMBTA55=2H MMBTA56=2GM |
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MMBTA55 MMBTA56 300mA MMBTA55 MMBTA56 OT-23 marking 2GM x | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. Driver Transistors PNP Silicon LMBTA55WT1G LMBTA56WT1G S-LMBTA55WT1G S-LMBTA56WT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 |
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LMBTA55WT1G LMBTA56WT1G S-LMBTA55WT1G S-LMBTA56WT1G AEC-Q101 LMBTA55 LMBTA56 SC-70 | |
Marking 2GM
Abstract: LMBTA56LT1G LMBTA55LT1G LMBTA56 2GM sot LMBTA55 2GM j sot23 6 device Marking 2GM 4
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LMBTA55LT1G LMBTA56LT1G LMBTA55 LMBTA56 236AB) LMBTA55LT1G OT-23 Marking 2GM LMBTA56LT1G LMBTA56 2GM sot 2GM j sot23 6 device Marking 2GM 4 | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. Driver Transistors PNP Silicon LMBTA55LT1G LMBTA56LT1G S-LMBTA55LT1G S-LMBTA56LT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 |
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LMBTA55LT1G LMBTA56LT1G S-LMBTA55LT1G S-LMBTA56LT1G AEC-Q101 LMBTA55 LMBTA56 236AB) LMBTA55LT1G | |
marking 2GM
Abstract: LMBTA55WT1G 2GM transistor LMBTA55 sc70 marking 2H 2GM j marking 2GM x
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LMBTA55WT1G LMBTA56WT1G LMBTA55 LMBTA56 SC-70 LMBTA55WT1G marking 2GM 2GM transistor sc70 marking 2H 2GM j marking 2GM x | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. Driver Transistors PNP Silicon LMBTA55LT1G LMBTA56LT1G S-LMBTA55LT1G S-LMBTA56LT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 |
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LMBTA55LT1G LMBTA56LT1G S-LMBTA55LT1G S-LMBTA56LT1G AEC-Q101 LMBTA55 LMBTA56 236AB) LMBTA55LT1G | |
MMBTA56LT1
Abstract: marking code 2GM SOT 23
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MMBTA55LT1, MMBTA56LT1 MMBTA56LT1 MMBTA55 MMBTA56 MMBTA55LT1 OT-23 marking code 2GM SOT 23 | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. Driver Transistors PNP Silicon LMBTA55LT1G LMBTA56LT1G 3 COLLECTOR Pb-free package is available. The suffix G means Pb-free. 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value LMBTA55 LMBTA56 Collector–Emitter Voltage V |
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LMBTA55LT1G LMBTA56LT1G LMBTA55 LMBTA56 236AB) | |
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Contextual Info: Driver Transistors PNP Silicon MMBTA55LT1 MMBTA56LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value MMBTA55 MMBTA56 Collector–Emitter Voltage V CEO –60 –80 Vdc Collector–Base Voltage V CBO –60 –80 Vdc Emitter–Base Voltage |
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MMBTA55LT1 MMBTA56LT1 MMBTA55 MMBTA56 236AB) AmbientMBTA56LT1 100mAdc, 10mAdc) | |
marking 2GM
Abstract: 2GM transistor marking M29 MMBTA56LT1 M292 2GM j MMBTA55 MMBTA55LT1 MMBTA56
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MMBTA55LT1 MMBTA56LT1 MMBTA55 MMBTA56 236AB) MMBTA55LT1 100mAdc, 10mAdc) marking 2GM 2GM transistor marking M29 MMBTA56LT1 M292 2GM j MMBTA56 | |
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Contextual Info: ON Semiconductort Driver Transistors MMBTA55LT1 MMBTA56LT1 PNP Silicon MMBTA56LT1 is a Preferred Device MAXIMUM RATINGS Rating Symbol MMBTA55 MMBTA56 Unit Collector–Emitter Voltage VCEO –60 –80 Vdc Collector–Base Voltage VCBO –60 –80 Vdc Emitter–Base Voltage |
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MMBTA55 MMBTA56 MMBTA55LT1 MMBTA56LT1 MMBTA56LT1 MMBTA55LT1 MMBTA55LT1/D | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. Driver Transistors PNP Silicon LMBTA55LT1G LMBTA56LT1G 3 COLLECTOR Pb-free package is available. The suffix G means Pb-free. 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value LMBTA55 LMBTA56 Collector–Emitter Voltage V CEO |
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LMBTA55LT1G LMBTA56LT1G LMBTA55 LMBTA56 236AB) 100mAdc, 10mAdc) | |
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Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Driver Transistors PNP SilÌCOn MMBTA55LT1 M MBTA56LT1* COLLECTOR 3 ‘Motorola Preferred Device 2 MAXIMUM RATINGS EMITTER Symbol MMBTA55 MMBTA56 Unit C ollector-E m itter Voltage VCEO -6 0 -8 0 Vdc C ollecto r-B a se Voltage |
OCR Scan |
MMBTA55LT1 MBTA56LT1* MMBTA55 MMBTA56 OT-23 O-236AB) MMBTA55LT1 MMBTA56LT1 | |
2GM smd
Abstract: SMD 2GM MMBTA55 MMBTA56
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MMBTA56 OT-23 500mA 225mW 50MHz 10mAdc) 100mA) 100mAdc, 2GM smd SMD 2GM MMBTA55 MMBTA56 | |
MMBTA55
Abstract: MMBTA55 MMBTA56 2gm transistor 6 MMBTA56 2gm transistor 2GM H transistor 2GM sot-23 transistor
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MMBTA55 MMBTA56 OT-23 01-Jun-2002 MMBTA55 MMBTA56 2gm transistor 6 MMBTA56 2gm transistor 2GM H transistor 2GM sot-23 transistor | |
MMBTA56Contextual Info: MCC MMBTA55 THRU MMBTA56 omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components Features • This device is designed for general purpose amplifier applications at collector current to 300mA |
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MMBTA55 MMBTA56 OT-23 300mA MMBTA56 | |
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Contextual Info: MCC MMBTA55 THRU MMBTA56 omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components Features • This device is designed for general purpose amplifier applications at collector current to 300mA |
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MMBTA55 MMBTA56 OT-23 300mA 2H/B55, MMBTA56 2GM/B56 | |
MMBTA55
Abstract: MMBTA55LT1 MMBTA56 MMBTA56LT1
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MMBTA55LT1/D MMBTA55LT1 MMBTA56LT1* MMBTA55 MMBTA56 236AB) MMBTA56LT1 MMBTA55LT1/D* MMBTA55 MMBTA55LT1 MMBTA56 MMBTA56LT1 | |
MMBTA55
Abstract: MMBTA55LT1 MMBTA56 MMBTA56LT1
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MMBTA55LT1/D MMBTA55LT1 MMBTA56LT1* MMBTA55 MMBTA56 236AB) MMBTA56LT1 MMBTA55LT1/D* MMBTA55 MMBTA55LT1 MMBTA56 MMBTA56LT1 | |
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Contextual Info: WILLAS FM120-M+ THRU MMBTA5xLT1 Driver Transistors FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers PNP Silicon better reverse leakage current and thermal resistance. |
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FM120-M+ FM1200-M+ OD-123+ OD-123H FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH | |
MMBTA55
Abstract: MMBTA55LT1 MMBTA56 MMBTA56LT1 MMBTA55L
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MMBTA55LT1/D MMBTA55LT1 MMBTA56LT1* MMBTA55 MMBTA56 236AB) MMBTA56LT1 MMBTA55LT1/D* MMBTA55 MMBTA55LT1 MMBTA56 MMBTA56LT1 MMBTA55L | |
MMBTA55
Abstract: MMBTA55LT1 MMBTA56 MMBTA56LT1
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MMBTA55LT1 MMBTA56LT1 MMBTA55 MMBTA56 r14525 MMBTA55LT1/D MMBTA55 MMBTA55LT1 MMBTA56 MMBTA56LT1 | |