MARKING 2GM X Search Results
MARKING 2GM X Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| MG80C186-10/BZA |
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80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101ZA) |
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| ICM7555MTV/883 |
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ICM7555MTV/883 - Dual marked (5962-8950303GA) |
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| MQ80C186-10/BYA |
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80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101YA) |
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| 54121/BCA |
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54121 - Multivibrator, Monostable - Dual marked (M38510/01201BCA) |
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| 54AC20/SDA-R |
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54AC20/SDA-R - Dual marked (M38510R75003SDA) |
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MARKING 2GM X Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: MMBTA55 THRU MMBTA56 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • This device is designed for general purpose amplifier applications at collector current to 300mA Marking Code: MMBTA55=2H MMBTA56=2GM |
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MMBTA55 MMBTA56 300mA MMBTA55 MMBTA56 OT-23 | |
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Contextual Info: MCC MMBTA55 THRU MMBTA56 omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • This device is designed for general purpose amplifier applications at collector current to 300mA Marking Code: MMBTA55=2H MMBTA56=2GM |
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MMBTA55 MMBTA56 OT-23 300mA MMBTA56 | |
marking 2GM xContextual Info: MCC MMBTA55 THRU MMBTA56 omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • This device is designed for general purpose amplifier applications at collector current to 300mA Marking Code: MMBTA55=2H MMBTA56=2GM |
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MMBTA55 MMBTA56 300mA MMBTA55 MMBTA56 OT-23 marking 2GM x | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. Driver Transistors PNP Silicon LMBTA55WT1G LMBTA56WT1G S-LMBTA55WT1G S-LMBTA56WT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 |
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LMBTA55WT1G LMBTA56WT1G S-LMBTA55WT1G S-LMBTA56WT1G AEC-Q101 LMBTA55 LMBTA56 SC-70 | |
Marking 2GM
Abstract: LMBTA56LT1G LMBTA55LT1G LMBTA56 2GM sot LMBTA55 2GM j sot23 6 device Marking 2GM 4
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LMBTA55LT1G LMBTA56LT1G LMBTA55 LMBTA56 236AB) LMBTA55LT1G OT-23 Marking 2GM LMBTA56LT1G LMBTA56 2GM sot 2GM j sot23 6 device Marking 2GM 4 | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. Driver Transistors PNP Silicon LMBTA55LT1G LMBTA56LT1G S-LMBTA55LT1G S-LMBTA56LT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 |
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LMBTA55LT1G LMBTA56LT1G S-LMBTA55LT1G S-LMBTA56LT1G AEC-Q101 LMBTA55 LMBTA56 236AB) LMBTA55LT1G | |
marking 2GM
Abstract: LMBTA55WT1G 2GM transistor LMBTA55 sc70 marking 2H 2GM j marking 2GM x
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LMBTA55WT1G LMBTA56WT1G LMBTA55 LMBTA56 SC-70 LMBTA55WT1G marking 2GM 2GM transistor sc70 marking 2H 2GM j marking 2GM x | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. Driver Transistors PNP Silicon LMBTA55LT1G LMBTA56LT1G S-LMBTA55LT1G S-LMBTA56LT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 |
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LMBTA55LT1G LMBTA56LT1G S-LMBTA55LT1G S-LMBTA56LT1G AEC-Q101 LMBTA55 LMBTA56 236AB) LMBTA55LT1G | |
MMBTA56LT1
Abstract: marking code 2GM SOT 23
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MMBTA55LT1, MMBTA56LT1 MMBTA56LT1 MMBTA55 MMBTA56 MMBTA55LT1 OT-23 marking code 2GM SOT 23 | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. Driver Transistors PNP Silicon LMBTA55LT1G LMBTA56LT1G 3 COLLECTOR Pb-free package is available. The suffix G means Pb-free. 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value LMBTA55 LMBTA56 Collector–Emitter Voltage V |
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LMBTA55LT1G LMBTA56LT1G LMBTA55 LMBTA56 236AB) | |
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Contextual Info: Driver Transistors PNP Silicon MMBTA55LT1 MMBTA56LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value MMBTA55 MMBTA56 Collector–Emitter Voltage V CEO –60 –80 Vdc Collector–Base Voltage V CBO –60 –80 Vdc Emitter–Base Voltage |
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MMBTA55LT1 MMBTA56LT1 MMBTA55 MMBTA56 236AB) AmbientMBTA56LT1 100mAdc, 10mAdc) | |
marking 2GM
Abstract: 2GM transistor marking M29 MMBTA56LT1 M292 2GM j MMBTA55 MMBTA55LT1 MMBTA56
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MMBTA55LT1 MMBTA56LT1 MMBTA55 MMBTA56 236AB) MMBTA55LT1 100mAdc, 10mAdc) marking 2GM 2GM transistor marking M29 MMBTA56LT1 M292 2GM j MMBTA56 | |
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Contextual Info: ON Semiconductort Driver Transistors MMBTA55LT1 MMBTA56LT1 PNP Silicon MMBTA56LT1 is a Preferred Device MAXIMUM RATINGS Rating Symbol MMBTA55 MMBTA56 Unit Collector–Emitter Voltage VCEO –60 –80 Vdc Collector–Base Voltage VCBO –60 –80 Vdc Emitter–Base Voltage |
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MMBTA55 MMBTA56 MMBTA55LT1 MMBTA56LT1 MMBTA56LT1 MMBTA55LT1 MMBTA55LT1/D | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. Driver Transistors PNP Silicon LMBTA55LT1G LMBTA56LT1G 3 COLLECTOR Pb-free package is available. The suffix G means Pb-free. 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value LMBTA55 LMBTA56 Collector–Emitter Voltage V CEO |
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LMBTA55LT1G LMBTA56LT1G LMBTA55 LMBTA56 236AB) 100mAdc, 10mAdc) | |
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Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Driver Transistors PNP SilÌCOn MMBTA55LT1 M MBTA56LT1* COLLECTOR 3 ‘Motorola Preferred Device 2 MAXIMUM RATINGS EMITTER Symbol MMBTA55 MMBTA56 Unit C ollector-E m itter Voltage VCEO -6 0 -8 0 Vdc C ollecto r-B a se Voltage |
OCR Scan |
MMBTA55LT1 MBTA56LT1* MMBTA55 MMBTA56 OT-23 O-236AB) MMBTA55LT1 MMBTA56LT1 | |
MMBTA55
Abstract: MMBTA55 MMBTA56 2gm transistor 6 MMBTA56 2gm transistor 2GM H transistor 2GM sot-23 transistor
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MMBTA55 MMBTA56 OT-23 01-Jun-2002 MMBTA55 MMBTA56 2gm transistor 6 MMBTA56 2gm transistor 2GM H transistor 2GM sot-23 transistor | |
MMBTA56Contextual Info: MCC MMBTA55 THRU MMBTA56 omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components Features • This device is designed for general purpose amplifier applications at collector current to 300mA |
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MMBTA55 MMBTA56 OT-23 300mA MMBTA56 | |
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Contextual Info: MCC MMBTA55 THRU MMBTA56 omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components Features • This device is designed for general purpose amplifier applications at collector current to 300mA |
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MMBTA55 MMBTA56 OT-23 300mA 2H/B55, MMBTA56 2GM/B56 | |
MMBTA55
Abstract: MMBTA55LT1 MMBTA56 MMBTA56LT1
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MMBTA55LT1/D MMBTA55LT1 MMBTA56LT1* MMBTA55 MMBTA56 236AB) MMBTA56LT1 MMBTA55LT1/D* MMBTA55 MMBTA55LT1 MMBTA56 MMBTA56LT1 | |
MMBTA55
Abstract: MMBTA55LT1 MMBTA56 MMBTA56LT1
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MMBTA55LT1/D MMBTA55LT1 MMBTA56LT1* MMBTA55 MMBTA56 236AB) MMBTA56LT1 MMBTA55LT1/D* MMBTA55 MMBTA55LT1 MMBTA56 MMBTA56LT1 | |
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Contextual Info: WILLAS FM120-M+ THRU MMBTA5xLT1 Driver Transistors FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers PNP Silicon better reverse leakage current and thermal resistance. |
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FM120-M+ FM1200-M+ OD-123+ OD-123H FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH | |
MMBTA55
Abstract: MMBTA55LT1 MMBTA56 MMBTA56LT1 MMBTA55L
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MMBTA55LT1/D MMBTA55LT1 MMBTA56LT1* MMBTA55 MMBTA56 236AB) MMBTA56LT1 MMBTA55LT1/D* MMBTA55 MMBTA55LT1 MMBTA56 MMBTA56LT1 MMBTA55L | |
MMBTA55
Abstract: MMBTA55LT1 MMBTA56 MMBTA56LT1
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MMBTA55LT1 MMBTA56LT1 MMBTA55 MMBTA56 r14525 MMBTA55LT1/D MMBTA55 MMBTA55LT1 MMBTA56 MMBTA56LT1 | |
smd k72 y5
Abstract: K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89
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1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 smd k72 y5 K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89 | |