MARKING 24 DIODE Search Results

marking P2 sot-23

Abstract: marking wa sot-23
Contextual Info: CONNECTION DIAGRAMS 3 3 3 1201 3 1203 24 2 NC 1 1 2 SOT-23 2 MARKING MMBD1201 24 MMBD1204 27 MMBD1203 26 MMBD1205 28 1 1 2 3 3 1204 1 1205 2 1 2 High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

transistor 1201 1203 1205

Abstract: MMBD1201 MMBD1203 MMBD1204A MMBD1205A wA MARKING SOT-23 SERIES DIODE marking P2 sot-23 fairchild s sot-23 Device Marking
Contextual Info: CONNECTION DIAGRAMS 3 3 1201 3 1203 24 3 2 NC 1 1 2 SOT-23 2 MARKING MMBD1201 24 MMBD1204A 27 MMBD1203 26 MMBD1205A 28 1 1 2 3 3 1204 1 2 1 1205 2 High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

itt ol 170

Contextual Info: HAL114 ADVANCE INFORMATION Hall Effect Sensor 1C in CMOS technology Marking Code Type Tern perature Rimge Features: A - operates from 4.5 V to 24 V supply voltage HAL114S HAL114UA - overvoltage and reverse-voltage protection 114A 114E 114C - short-circuit protected open-drain output switch

Contextual Info: DGS 15-018CS DGSK 32-018CS Advanced Technical Information VRRM = 180 V IDC = 24 A CJunction = 21 pF Gallium Arsenide Schottky Rectifier Second generation Type Marking on product DGS 15-018CS 15A18CS DGSK 32-018CS Circuit Package A Single C A TO-252 AA TO-263 AB

ERD03

Abstract: diode a57
Contextual Info: ERD03 3 .OA * ± ' j Outline Drawings GENERAL USE RECTIFIER DIODE -w f*7.5 *1.8 1 — 24MIN — 10 24 MIN— • 4 * A : Features • H igh current • f c f S f i l li High reliability ■ S tK I Marking ! Applications A 5 —3 —K : Ö Color code : White

fairchild 1P

Contextual Info: S E M IC O N D U C T O R MMBD1201 /1203 /1204 /1205 CONNECTION f 1201 DIAGRAMS 3 1 2NC 1204 t MARKING MMBD1201 24 MMBD1204A 27 MMBD1203 26 MMBD1205A 28 * 1 2 3 I I SOT-23 1203^ 3 * ^ * + 1 ; 205 * J 2 High Conductance Ultra Fast Diode S o u rce d fro m P roce ss 1P.

Contextual Info: MIXA40W1200TML Six-Pack XPT IGBT VCES = 1200 V IC25 = 60 A VCE sat = 1.8 V Part name (Marking on product) MIXA40W1200TML 10, 23 14 18 22 13 17 21 8 11, 12 15, 16 19, 20 NTC E72873 Pin coniguration see outlines. 7 6 4 2 5 3 1 9, 24 Features: Application: Package:

Contextual Info: MKI 80-06T6K IGBT Modules H-Bridge IC25 = 89 A VCES = 600 V VCE sat typ. = 1.8 V Trench IGBT Preliminary data Part name (Marking on product) MKI 80-06T6K 10/17/18/23 15 21 16 22 8 11/12 19/20 7 5 1 6 2 3/4/9/24 Features: Application: Package: • Trench IGBT technology

diode n04

Contextual Info: MIXA40W1200TED Six-Pack XPT IGBT VCES = 1200 V IC25 = 60 A VCE sat = 1.8 V Part name (Marking on product) MIXA40W1200TED 15, 16 25, 26 17 1 5 9 2 6 10 NTC 23, 24 21, 22 19, 20 E 72873 18 3 4 7 11 8 12 Pin configuration see outlines. 13, 14 27, 28 Features:

Contextual Info: MIXA60W1200TED Six-Pack XPT IGBT VCES = 1200 V IC25 = 85 A VCE sat = 1.8 V Preliminary data Part name (Marking on product) MIXA60W1200TED 15, 16 25, 26 17 1 5 9 2 6 10 23, 24 21, 22 19, 20 NTC E 72873 18 3 4 Pin coniguration see outlines. 7 11 8 12 13, 14

MIXA30W1200TED

Contextual Info: MIXA30W1200TED Six-Pack XPT IGBT VCES = 1200 V IC25 = 43 A VCE sat = 1.8 V Part name (Marking on product) MIXA30W1200TED 15, 16 25, 26 17 1 5 9 2 6 10 23, 24 21, 22 19, 20 NTC E 72873 18 3 4 Pin coniguration see outlines. 7 11 8 12 13, 14 27, 28 Features:

Contextual Info: MWI 35-12T7T IC25 = 60 A VCES = 1200 V VCE sat typ. = 1.7 V Six-Pack Trench฀IGBT Part name (Marking on product) MWI 35-12T7T 15, 16 25, 26 17 1 5 9 2 6 10 23, 24 21, 22 19, 20 NTC 18 E72873 Pin configuration see outlines. 3 4 7 11 8 12 13, 14 27, 28 Features:

Contextual Info: MIXA150W1200TEH Six-Pack XPT IGBT VCES = 1200 V IC25 = 220 A VCE sat = 1.8 V Part name (Marking on product) MIXA150W1200TEH 16, 17, 18 30, 31, 32 D1 1 19 D3 T1 5 9 27 28 29 24 25 26 D2 3 T2 4 T5 10 6 2 NTC 20 D5 T3 21 22 23 D4 7 8 T4 E72873 Pin configuration see outlines.

Contextual Info: Data sheet 2-conductor diode terminal block; with diode 1N5408 Item No.: 281-915/281-400 2-conductor diode terminal block; with diode 1N5408 Item No.: 281-915/281-400 2-conductor diode terminal block; with diode 1N5408 Marking Business data Supplier WAGO Supplier part no.

BB182

Abstract: MARKING CODE SMD diode
Contextual Info: BB182 VHF variable capacitance diode Rev. 03 — 24 February 2009 Product data sheet 1. Product profile 1.1 General description The BB182 is a planar technology variable capacitance diode in a SOD523 SC-79 ultra small plastic package. The excellent matching performance is achieved by gliding

Contextual Info: LESHAN RADIO COMPANY, LTD. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors MMBZ5V6ALT1 Series 3 SOT–23 Dual Common Anode Zeners for ESD Protection 1 2 These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They

SOD-323 land pattern

Abstract: SD05C
Contextual Info: SD05C through SD24C Single Line TVS Diode for ESD Protection in Portable Electronics PRELIMINARY PROTECTION PRODUCTS Description Features The SDxxC TVS diodes are designed to replace multilayer varistors MLVs in portable applications such as cell phones, notebook computers, and PDA’s. They

Marking code TVS Diodes

Contextual Info: Transient Voltage Suppression Diodes Surface Mount > 3.0SMC Series 3.0SMC Series RoHS Description Uni-directional The 3.0SMC series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events.

H 48 zener diode

Abstract: 6V8C marking 13B zener diode marking code 30 zener diode marking code 40 DDZX10C DDZX11C DDZX12C DDZX8V2C DDZX14
Contextual Info: DDZX5V1B - DDZX43 SURFACE MOUNT PRECISION ZENER DIODE Features • · · · · Very Sharp Breakdown Characteristics 300mW Power Dissipation on FR-4 PCB Very Tight Tolerance on VZ Ideally Suited for Automated Assembly Processes Very Low Leakage Current SOT-23

zener diode B5

Abstract: B9 zener diode sod*323* diode MARKING B3 zener diode BN Zener Diode B1 9 zener diode BZ 320 BZ 85 18 zener diode J-STD-020A UDZ10B UDZ12B
Contextual Info: UDZ2V0B-UDZ56B SURFACE MOUNT PRECISION ZENER DIODE UNDER DEVELOPMENT NEW PRODUCT Features • · · · · Ultra-Small Surface Mount Package Ideally suited for Automated Assembly Processes Very Sharp Breakdown Characteristics Very Tight Tolerance on Zener Breakdown Voltage

diode hp 2835

Abstract: DIODE Sp marking code diode marking 7n MARKING CODE R7 DIODE 4935A marking code 8P marking code KP CMDZ10L CMDZ11L CMDZ13L
Contextual Info: Central CMDZ1L8 THRU CMDZ47L TM Semiconductor Corp. SUPERmini LOW LEVEL ZENER DIODE 250mW, 1.8 VOLTS THRU 47 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDZ1L8 Series Silicon Low Level Zener Diode is a high quality voltage regulator, manufactured in a

1N4565

Abstract: 6.4v zener diode temperature compensated zener diode 8251 1N4565A 1N4566 1N4566A 1N4567 1N4567A 1N4568
Contextual Info: 6.4V TEMPERATURE COMPENSATED ZENER DIODE 1N4565 - 1N4584ADLCC2 • Hermetic Ceramic Surface Mount Package • 6.4V ±5% Reference Voltage • Stable over a wide temperature range • Space Level and High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated

HVR-1X 7 diode

Abstract: HVR-1X 7 hvr-ix HVR-1X 6 diode microwave oven 10DN 40b marking fbt tv 10EN HVR-1X 8 diode
Contextual Info: High-Voltage Rectifier Diodes Electrical Characteristics Ta = 25°C Absolute Maximum Ratings Parameter Type No. SHV-02 SHV-03S SHV-03 SHV-10 SHV-12 SHV-14 SHV-16 SHV-20 SHV-24 SHV-06EN SHV-08EN SHV-10EN SHV-12EN SHV-08DN SHV-10DN SHV-12DN HVR-1X-40B VRM

KS 2152

Abstract: diode sod-123 marking code 120 H 48 zener diode DDZ16 DDZ18C DDZ20C DDZ22D DDZ43 DDZ10C DDZ11C
Contextual Info: DDZ3V3A - DDZ43 SURFACE MOUNT PRECISION ZENER DIODE SPICE MODELS: DDZ5V1B DDZ5V6B DDZ6V2B DDZ6V8C DDZ7V5C DDZ8V2C DDZ9V1C DDZ10C DDZ11C DDZ12C DDZ13B DDZ14 DDZ15 DDZ16 Features • · · · · · Very Sharp Breakdown Characteristics 500mW Power Dissipation on Ceramic PCB