MARKING 23Z Search Results

schiele

Abstract: Luranyl 2402 L99-799-XXE rosenberger assembly mini 23S103-270L3 32S10 32S102-270L5 23Z121-007
Contextual Info: TECHNICAL DATA SHEET RF_35/05.10/6.0 Dieses Dokument ist urheberrechtlich geschützt ● This document is protected by copyright ● Rosenberger Hochfrequenztechnik GmbH & Co. KG CABLE ASSEMBLY MINI COAX PLUG/JACK – SMA PLUG L99-799-XXE Marking 1A 1B 2A

L99-816-XXE

Abstract: jack rtk 6.35 jack
Contextual Info: TECHNICAL DATA SHEET CABLE ASSEMBLY MINI COAX PLUG/JACK – SMA PLUG L99-816-XXE Marking All dimensions are in mm; tolerances according to ISO 2768 c-H RF_35/11.05/3.1 Available variants Type Channels A mm Insertion loss ≤ (dB) at 20 GHz Weight (g) / pce

Contextual Info: TECHNICAL DATA SHEET RF_35/05.10/6.0 Dieses Dokument ist urheberrechtlich geschützt ● This document is protected by copyright ● Rosenberger Hochfrequenztechnik GmbH & Co. KG CABLE ASSEMBLY MINI COAX PLUG/JACK – SMA PLUG L99-816-XXD Marking B All dimensions are in mm; tolerances according to ISO 2768 c-H

ROSENBERGER

Abstract: 23k1
Contextual Info: TECHNICAL DATA SHEET RF_35/05.10/6.0 Dieses Dokument ist urheberrechtlich geschützt ● This document is protected by copyright ● Rosenberger Hochfrequenztechnik GmbH & Co. KG CABLE ASSEMBLY MINI COAX PLUG/JACK – SMA PLUG L99-816-XXD Marking B All dimensions are in mm; tolerances according to ISO 2768 c-H

Contextual Info: MICRON B M T4C16256/7/8/9 L 256K X 16 WIDE DRAM BCMICDNDUCTaH. WC WIDE DRAM 256K x 16 DRAM LOW POWÉR, EXTENDED REFRESH FEATURES MARKING • T im ing 60ns access 70ns access 80ns access • W rite Cycle Access BYTE o r W ORD via WE nonm askable BYTE or W ORD via CAS

Contextual Info: PAGE NBR 1 PACKAGING PROCESS SHEET STANDARD PACKAGING PROCESS FOR CATALOG NBR 1434072-1 00 CURRENT UM PC ORG CODE 0K00 PROD CDE M136 SUPPLIER MFG DATE 10/24/01 COUNTRY CODE MX TRADEMARK NM FLEXSTRIP STANDARD QUANTITY 1000 DESCRIPTION STANDARD LEVEL 200 PRODUCT DESC FSN-23Z-6

23Z6

Abstract: 23Z2 MARKING WL JESD22-A113 JESD51-7 LP2985 LP3985 SC74 0.47 uf capacitor
Contextual Info: DA9123.007 3 May 2004 MAS9123 80 mA LDO Voltage Regulator IC • • • • Very Low Noise: 9.5 µVrms Very Short Start-up Time: 20 µs Excellent Ripple Rejection: 68 dB Stable with Low-ESR Output Capacitors • Low Minimum Output Capacitance Requirement: 0.23 µF

523AX

Abstract: 23Z6
Contextual Info: DA9123.007 3 May 2004 MAS9123 80 mA LDO Voltage Regulator IC • • • • Very Low Noise: 9.5 µVrms Very Short Start-up Time: 20 µs Excellent Ripple Rejection: 68 dB Stable with Low-ESR Output Capacitors • Low Minimum Output Capacitance Requirement: 0.23 µF

Contextual Info: SSM3K335R MOSFETs Silicon N-Channel MOS U-MOS-H SSM3K335R 1. Applications • Power Management Switches • DC-DC Converters 2. Features (1) 4.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 38 mΩ (max) (@VGS = 10 V) RDS(ON) = 56 mΩ (max) (@VGS = 4.5 V)

ssm3j331

Contextual Info: SSM3J331R MOSFETs Silicon P-Channel MOS U-MOS SSM3J331R 1. Applications • Power Management Switches 2. Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 150 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 100 mΩ (max) (@VGS = -1.8 V)

SSM3K335R

Contextual Info: SSM3K335R MOSFETs Silicon N-Channel MOS U-MOS-H SSM3K335R 1. Applications • Power Management Switches • DC-DC Converters 2. Features (1) 4.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 38 mΩ (max) (@VGS = 10 V) RDS(ON) = 56 mΩ (max) (@VGS = 4.5 V)

ssm3j331

Abstract: SSM3J331R
Contextual Info: SSM3J331R MOSFETs Silicon P-Channel MOS U-MOS SSM3J331R 1. Applications • Power Management Switches 2. Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 150 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 100 mΩ (max) (@VGS = -1.8 V)

Contextual Info: SSM3K336R MOSFETs Silicon N-Channel MOS SSM3K336R 1. Applications • Power Management Switches • DC-DC Converters 2. Features 1 4.5 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 95 mΩ (max) (@VGS = 10 V) RDS(ON) = 140 mΩ (max) (@VGS = 4.5 V)

Contextual Info: SSM3K336R MOSFETs Silicon N-Channel MOS SSM3K336R 1. Applications • Power Management Switches • DC-DC Converters 2. Features 1 4.5 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 95 mΩ (max) (@VGS = 10 V) RDS(ON) = 140 mΩ (max) (@VGS = 4.5 V)

Contextual Info: SSM3K335R MOSFETs Silicon N-Channel MOS U-MOS-H SSM3K335R 1. Applications • Power Management Switches • DC-DC Converters 2. Features (1) 4.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 38 mΩ (max) (@VGS = 10 V) RDS(ON) = 56 mΩ (max) (@VGS = 4.5 V)

Contextual Info: SSM3J331R MOSFETs Silicon P-Channel MOS U-MOS SSM3J331R 1. Applications • Power Management Switches 2. Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 150 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 100 mΩ (max) (@VGS = -1.8 V)

Contextual Info: SSM3K336R MOSFETs Silicon N-Channel MOS SSM3K336R 1. Applications • Power Management Switches • DC-DC Converters 2. Features 1 4.5 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 95 mΩ (max) (@VGS = 10 V) RDS(ON) = 140 mΩ (max) (@VGS = 4.5 V)

Contextual Info: TECHNICAL DATA SHEET RF_35/05.10/6.0 Dieses Dokument ist urheberrechtlich geschützt ● This document is protected by copyright ● Rosenberger Hochfrequenztechnik GmbH & Co. KG CABLE ASSEMBLY MINI COAX PLUG/JACK – SMA PLUG 1A 1B 2A 2B 3A 3B L99-799-XXG

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Contextual Info: OPERATING TEMPERATURE RANGE RATING 2010 / 01/12 08:05:35 c a r o l. tr ib b le A P P L IC A 3LE S T A N D A R D STORAGE TEMPERATURE RANGE APPLICABLE CONNECTOR -35°C TO +85°C NOTES 1 VOLTAGE 30V AC CURRENT 0. 3A -10°C TO +60°C BM10* (0. 8) —16DS—0. 4V (*)

marking 23z

Abstract: SGA-2386z AN-075 SGA-2386
Contextual Info: Product Description The SGA-2386 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities

Contextual Info: SGA-2363 Product Description The SGA-2363 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities

Contextual Info: SSM3K333R TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type U-MOS VII-H SSM3K333R Power Management Switch Applications High-Speed Switching Applications Unit: mm +0.08 4.5V drive • Low ON-resistance: RDS(ON) = 42 mΩ (max) (@VGS = 4.5 V) 0.05