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    MARKING 20 ESD Search Results

    MARKING 20 ESD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG80C186-10/BZA
    Rochester Electronics LLC 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101ZA) PDF Buy
    ICM7555MTV/883
    Rochester Electronics LLC ICM7555MTV/883 - Dual marked (5962-8950303GA) PDF Buy
    MQ80C186-10/BYA
    Rochester Electronics LLC 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101YA) PDF Buy
    54121/BCA
    Rochester Electronics LLC 54121 - Multivibrator, Monostable - Dual marked (M38510/01201BCA) PDF Buy
    54F191/QEA
    Rochester Electronics LLC 54F191/QEA - Dual marked (5962-9058201EA) PDF Buy

    MARKING 20 ESD Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    marking code f 25 x

    Abstract: marking code R1 sot23
    Contextual Info: CMPLC1V5 CMPLC1V5D SURFACE MOUNT LOW CAPACITANCE SILICON ESD TRANSIENT DATA LINE PROTECTOR SOT-23 CASE MARKING CODES: CMPLC1V5 SINGLE : CLV5 CMPLC1V5D (DUAL): CV5D MAXIMUM RATINGS: (TA=25°C) Reverse Stand-off Voltage Peak Pulse Power (8 x 20µs Waveform)


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    OT-23 27-January marking code f 25 x marking code R1 sot23 PDF

    Contextual Info: BFR 35AP NPN Silicon RF Transistor 3  For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20 mA 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR 35AP Marking


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    VPS05161 OT-23 900MHz Nov-30-2000 PDF

    bft97

    Abstract: transistor BFT 97 BFT 97 marking t54 20mAVCE transistor marking zs Q62702-F514 Transistor BFT 10 MARKING CODE t54
    Contextual Info: SIEM ENS BFT 97 NPN Silicon RF Transistor • For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking


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    BFT97 BFT97 Q62702-F514 fl235bGS D0b74SS fl23Sb05 00b745b transistor BFT 97 BFT 97 marking t54 20mAVCE transistor marking zs Transistor BFT 10 MARKING CODE t54 PDF

    Contextual Info: SIEM ENS NPN Silicon RF Transistor BFT 66 • For small-signal broadband amplifiers up to 1 GHz at collector currents up to 20 mA. £ CECC-type available: CECC 50002/255. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking


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    Q62702-F456 00b743fi 623SbD5 BFT66 flE35bOS PDF

    F804

    Abstract: Q62702-F804
    Contextual Info: PNP Silicon RF Transistor ● For broadband amplifiers up to 2 GHz at collector currents up to 20 mA. ● Complementary type: BFQ 71 NPN . BFQ 76 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code (tape and reel)


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    Q62702-F804 F804 Q62702-F804 PDF

    BFR90

    Contextual Info: SIEMENS NPN Silicon RF Transistor BFR 90 • For broadband amplifiers up to 2 GHz at collector currents from 1 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFR 90 BFR 90 Q62702-F560 Pin Configuration


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    Q62702-F560 flB35b05 BFR90 PDF

    30227

    Abstract: IC f 922 Transistor BFT 98 infineon marking W1s SOT23 Transistor BFT 10 BFT92 W1S SOT23
    Contextual Info: BFT 92 PNP Silicon RF Transistor 3  For broadband amplifiers up to 2 GHz at collector currents up to 20 mA  Complementary type: BFR 92P NPN 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFT 92 W1s


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    VPS05161 OT-23 900MHz Oct-25-1999 30227 IC f 922 Transistor BFT 98 infineon marking W1s SOT23 Transistor BFT 10 BFT92 W1S SOT23 PDF

    GSO05553

    Abstract: Q62702-G117 CFH77 HEMT marking P
    Contextual Info: GaAs HEMT CFH 77 Target Data Sheet • • • • Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! MW-4 Type Marking Ordering Code


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    Q62702-G117 GSO05553 GSO05553 Q62702-G117 CFH77 HEMT marking P PDF

    infineon marking W1s SOT23

    Abstract: BFT92 w1s sot23 marking W1S sot23 30227 BCW66 E6327
    Contextual Info: BFT92 PNP Silicon RF Transistor 3  For broadband amplifiers up to 2 GHz at collector currents up to 20 mA  Complementary type: BFR 92P NPN 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFT92 W1s Pin Configuration


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    BFT92 VPS05161 15rements infineon marking W1s SOT23 BFT92 w1s sot23 marking W1S sot23 30227 BCW66 E6327 PDF

    BFW92

    Contextual Info: SIEMENS BFW 92 NPN Silicon RF Transistor • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFW 92 BFW 92 Q62702-F321 Pin Configuration


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    Q62702-F321 fl235b05 35bQ5 Q0b747Q BFW92 PDF

    GaAs FET cfy 19

    Abstract: CFY 35-20 F1393 f1394 GSO05553 Q62702-F1393 Q62702-F1394 smd code marking 814 cfy 19
    Contextual Info: GaAs FET CFY 35 Data Sheet • • • • Low noise High gain For low-noise front end amplifiers For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel CFY 35-20 NA Q62702-F1393


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    Q62702-F1394 Q62702-F1393 GSO05553 GaAs FET cfy 19 CFY 35-20 F1393 f1394 GSO05553 Q62702-F1393 Q62702-F1394 smd code marking 814 cfy 19 PDF

    NCP1937

    Contextual Info: NCP1937 Combination Power Factor Correction and QuasiResonant Flyback Controllers for Adapters Common General Features http://onsemi.com MARKING DIAGRAM HV/X2 BO/X2 PControl SOIC−20 PONOFF Narrow Body QCT CASE 751BS Fault PSTimer QFB 1 20 NCP1937xxG AWLYWW


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    NCP1937 751BS NCP1937xxG NCP1937/D NCP1937 PDF

    MARKING PARI SC70-6

    Abstract: sot363 marking qs sm905
    Contextual Info: SÌ1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS(V) Id r D S (o n) (£2) A V P (A) 0.385 e VGS = 4.5 V 0.70 0.630 9 VGS = 2.5 V 0.54 20 SOT-363 SC-70 (6-LEADS) Marking Code L otTraceability and Date Code L— Pari # Code Top View


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    1902DL OT-363 SC-70 S-99188-- 01-Nov-99 MARKING PARI SC70-6 sot363 marking qs sm905 PDF

    80C166-M

    Abstract: 80C166M SAB 80C166-M CB "marking ca" 80C166 80C166E 88C166 C166 TCL SERVICE MANUAL SAB 80C166 single step
    Contextual Info: Microcomputer Components Technical Support Group Munich HL MCB AT 1 Errata Sheet March 20, 1996 / Release 1.0 Device : Stepping Code / Marking : SAB 80C166 - M, SAB 80C166 - M - T3 ES-DA, DA This Errata Sheet describes the functional problems see part A and the


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    80C166 80C166-M P-MQFP-100-2) 80C166-M, 80C166M SAB 80C166-M CB "marking ca" 80C166E 88C166 C166 TCL SERVICE MANUAL SAB 80C166 single step PDF

    c 129 transistor

    Abstract: transistor c 129 Q67000-S073 SIPMOS E6327 BSP129
    Contextual Info: BSP 129 SIPMOS Small-Signal Transistor ● VDS 240 V ● ID 0.2 A ● RDS on 20 Ω ● N channel ● Depletion mode ● High dynamic resistance Type Ordering Code Tape and Reel Information Pin Configuration Marking Package BSP 129 Q67000-S073 E6327: 1000 pcs/reel


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    Q67000-S073 E6327: OT-223 c 129 transistor transistor c 129 SIPMOS E6327 BSP129 PDF

    Contextual Info: MC74VHC1G66 SPST NO Normally Open Analog Switch MARKING DIAGRAMS 5 SC−88A DF SUFFIX CASE 419A High Speed: tPD = 20 ns (Typ) at VCC = 5.0 V 5 5 1 Low Power Dissipation: ICC = 1.0 mA (Max) at TA = 25°C V9 M G Diode Protection Provided on Inputs and Outputs


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    MC74VHC1G66 MC74VHC4066 MC14066. MC74VHC1G66/D PDF

    Contextual Info: MICRONAS Edition Oct. 20, 1999 6251-109-4E 6251-441-1DS HAL800 Programmable Linear Hall Effect Sensor MICRONAS HAL 800 Contents Page Section Title 3 3 3 4 4 4 4 4 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. 1.7. Introduction Major Applications Features Marking Code Operating Junction Temperature Range TJ


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    HAL800 6251-109-4E 6251-441-1DS PDF

    SS129

    Abstract: Q62702-S015 Q67000-S116
    Contextual Info: BSS 129 SIPMOS Small-Signal Transistor ● ● ● ● ● ● ● VDS 240 V ID 0.15 A RDS on 20 Ω N channel Depletion mode High dynamic resistance Available grouped in VGS(th) Type Ordering Code 2 1 Tape and Reel Information 3 Pin Configuration Marking Package


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    Q62702-S015 E6288: Q67000-S116 E6296: SS129 PDF

    specifications of MOSFET

    Abstract: on semiconductor marking code sot MOSFET 2KV marking code sot563 C08 marking Small Signal MOSFETs all mosfet equivalent book p-channel mosfet P-channel MOSFET 50V, 10 A rds code l02
    Contextual Info: PRODUCT announcement Small Signal MOSFETs TLP Tiny Leadless Package SOT-563 SOT-883L TLM621H Single or Dual (Single) (Single) features • Single and Dual configurations Sample Devices • N-Channel and P-Channel devices available • Dual MOSFET with ESD protection (CMLDM7003)


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    OT-563 OT-883L TLM621H CMLDM7003) 280mA, OT-563 CMLDM7003 CMLDM8002A CMLDM7002A specifications of MOSFET on semiconductor marking code sot MOSFET 2KV marking code sot563 C08 marking Small Signal MOSFETs all mosfet equivalent book p-channel mosfet P-channel MOSFET 50V, 10 A rds code l02 PDF

    BAT62

    Abstract: BAT62-02L BAT62-02W BAT62-03W BAT62-07L4 BAT62-07W BAT62-09S SCD80
    Contextual Info: BAT62. Silicon Schottky Diode • Low barrier diode for detectors up to GHz frequencies BAT62 4 BAT62-02L BAT62-02W BAT62-03W 3 BAT62-09S 6 4 3 1 D 1 2 2 1 D 2 D 1 D 2 2 4 5 D 2 D 1 1 BAT62-07W BAT62-07L4 1 2 3 ESD Electrostatic discharge sensitive device, observe handling precaution!


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    BAT62. BAT62 BAT62-02L BAT62-02W BAT62-03W BAT62-09S BAT62-07W BAT62-07L4 BAT62 BAT62-02L BAT62-02W BAT62-03W BAT62-07L4 BAT62-07W BAT62-09S SCD80 PDF

    ESD18VU1B-02LS

    Abstract: murata nfc antenna ESD18VU1B-02LRH nfc pcb antenna
    Contextual Info: TVS Diodes Transient Voltage Suppressor Diodes ESD18VU1B Series ESD / Transient Protection Diode for Near Field Communication NFC ESD18VU1B-02LRH ESD18VU1B-02LS Data Sheet Revision 1.1, 2012-05-30 Final Power Management & Multimarket Edition 2012-05-30 Published by


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    ESD18VU1B ESD18VU1B-02LRH ESD18VU1B-02LS IEC61000-4-2 ESD18VU1B-02LS murata nfc antenna nfc pcb antenna PDF

    sot23 marking code 02

    Abstract: BAS40 BAS40-04 BAS40-05 BAS40-06 J-STD-020A BAS40 K46
    Contextual Info: BAS40/ -04/ -05/ -06 SURFACE MOUNT SCHOTTKY BARRIER DIODE SPICE MODELS: BAS40 BAS40-04 BAS40-05 BAS40-06 Features • · · · Low Forward Voltage Drop Fast Switching PN Junction Guard Ring for Transient and ESD Protection Also Available in Lead Free Version


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    BAS40/ BAS40 BAS40-04 BAS40-05 BAS40-06 OT-23 OT-23, J-STD-020A MIL-STD-202, sot23 marking code 02 BAS40-06 J-STD-020A BAS40 K46 PDF

    sot23 marking code 02

    Abstract: transistor k43 J-STD-020A BAS40 BAS40-04 BAS40-05 BAS40-06 BAS40-7
    Contextual Info: BAS40/ -04/ -05/ -06 SURFACE MOUNT SCHOTTKY BARRIER DIODE Features • · · Low Forward Voltage Drop Fast Switching PN Junction Guard Ring for Transient and ESD Protection SOT-23 A B C Mechanical Data TOP VIEW · · · · · · · · Case: SOT-23, Molded Plastic


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    BAS40/ OT-23 OT-23, J-STD-020A MIL-STD-202, BAS40-06-7 BAS40-7 3000/Tape com/datasheets/ap02007 sot23 marking code 02 transistor k43 J-STD-020A BAS40 BAS40-04 BAS40-05 BAS40-06 BAS40-7 PDF

    Contextual Info: SESO8A C XXL04 SERIES Brightking's SESO8A(C)XXL04 series of TVS arrays are designed to provide ! " " # $ # % & $ ( ) ' & ! * % + % ,- % ,+ % -. " 3,+4 % "" % 54 ' */ & 6& ( " 7 ($1/,222& *24 ,2 .& & IEC61000-4-2 ESD 15kV Air, 8kV contact compliance " )(1#25


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    XXL04 IEC61000-4-2 SESO8AXXL04 SESO8CXXL04 PDF