MARKING 1PC Search Results

Contextual Info: TC7SL00FJC7SL00FU 2-INPUT NAND GATE The TC7SL00 is a low voltage operative C2MOS 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology. Operating voltage OJqq opr ¡s 1~3V equivalent to 1pc or 2pcs of dry cell battery and it achives low power

Contextual Info: TOSHIBA TC7SLU04F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SLU04F, TC7SLU04FU INVERTER The TC7SLU04 is a low voltage operative C2MOS INVERTER fabricated with silicon gate C2MOS technology Operating voltage V (x (o p r 's 1~3V equivalent to 1pc

Contextual Info: TOSHIBA TC7SL00F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SL00F, TC7SL00FU 2-INPUT NAND GATE The TC7SL00 is a low voltage operative C2MOS 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology. Operating voltage V c c (o p r 's 1~3V equivalent to 1pc

Contextual Info: TOSHIBA TC7SL02F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SL02F, TC7SL02FU 2-INPUT NOR GATE The TC7SL02 is a low voltage operative C2MOS 2-INPUT NOR GATE fabricated w ith silicon gate C2MOS technology. Operating voltage V c c (o p r 's 1~3V equivalent to 1pc

ITT 7

Contextual Info: TOSHIBA TC7SL08F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SL08F, TC7SL08FU 2-INPUT AND GATE The TC7SL08 is a low voltage operative C2MOS 2-INPUT AND GATE fabricated with silicon gate C2MOS technology. Operating voltage V c c (o p r 's 1~3V equivalent to 1pc

Contextual Info: TOSHIBA TC7SL08F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SL08F, TC7SL08FU 2-INPUT AND GATE The TC7SL08 is a low voltage operative C2MOS 2-INPUT AND GATE fabricated with silicon gate C2MOS technology. Operating voltage V c c (o p r 's 1~3V equivalent to 1pc

Contextual Info: TO SHIBA TC7SL04F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SL04F, TC7SL04FU INVERTER The TC7SL04 is a low voltage operative C2MOS INVERTER fabricated with silicon gate C2MOS technology. Operating voltage V (x (o p r is 1~3V equivalent to 1pc

Contextual Info: TOSHIBA TC7SLU04F/FU TO SH IBA CM OS D IG ITAL INTEGRATED CIRCU IT SILICON M ONOLITHIC TC7SLU04F, TC7SLU04FU INVERTER The TC7SLU04 is a low voltage operative C2MOS INVERTER fabricated w ith silicon gate C2MOS technology O perating voltage V ( x ( o p r ) is 1 ~ 3 V equivalent to 1pc

marking L4 toshiba

Contextual Info: TO SHIBA TC7SL32F/FU TO SH IBA CM OS D IG ITAL INTEGRATED CIRCU IT SILICON M ONOLITHIC TC7SL32F, TC7SL32FU 2-INPUT OR GATE The TC7SL32 is a low voltage operative C2MOS 2-INPUT OR GATE fabricated w ith silicon gate C2MOS technology. O perating voltage V ( x ( o p r ) is 1 ~ 3 V equivalent to 1pc

Contextual Info: TO SHIBA TC7SLU04F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SLU04F, TC7SLU04FU INVERTER The TC7SLU04 is a low voltage operative C2MOS INVERTER fabricated with silicon gate C2MOS technology Operating voltage V c c (o p r is 1~3V equivalent to 1pc

tc7sl08

Contextual Info: T O SH IB A TC7SL08F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SL08F, TC7SL08FU 2-INPUT AND GATE The TC7SL08 is a low voltage operative C2MOS 2-INPUT AND GATE fabricated with silicon gate C2MOS technology. Operating voltage V c c (o p r 's 1~3 V equivalent to 1pc

Contextual Info: T O SH IB A TC7SL02F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SL02F, TC7SL02FU 2-INPUT NOR GATE The TC7SL02 is a low voltage operative C2MOS 2-INPUT NOR GATE fabricated w ith silicon gate C2MOS technology. Operating voltage V c c (o p r 's 1~3 V equivalent to 1pc

tc7sl00

Contextual Info: T O SH IB A TC7SL00F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SL00F, TC7SL00FU 2-INPUT NAND GATE The TC7SL00 is a low voltage operative C2MOS 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology. Operating voltage V c c (o p r 's 1~3 V equivalent to 1pc

Zener diode smd marking code S3

Abstract: SMD CODE MARKING s7 SOT23 Zener diode smd marking code 621 triac 214 215 216 BZX84C5V1 spice smd z70 smd diode B3 SOT23 Z3 marking Zener diode smd marking S4 SMD CODE PACKAGE SOT23 486
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 BZX84 series Voltage regulator diodes Product data sheet Supersedes data of 1999 May 18 2003 Apr 10 NXP Semiconductors Product data sheet Voltage regulator diodes BZX84 series FEATURES PINNING • Total power dissipation: max. 250 mW

transistor 1PC

Abstract: CMST2222A 1pc marking
Contextual Info: CMST2222A w w w. c e n t r a l s e m i . c o m SURFACE MOUNT NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMST2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal, general

Okaya

Abstract: 100C 4R-4198-Y85 4r4198
Contextual Info: Spec No. Data Version SS-023 Oct 30, 2003 First P: 1/5 SPECIFICATION Product name : Rodan Spark Gap Type : RSG-502-BKL OKAYA ELECTRIC AMERICA, INC. Spec No. Data Version SS-023 Oct 30, 2003 First 1. Scope P: 2/5 This specification covers Rodan Spark Gap RSG-502-BKL.

ez 802

Abstract: Okaya Electric Industries rodan okaya spark gap 4r4198
Contextual Info: Spec No. Data Version SS-024 Oct 30, 2003 First P: 1/5 SPECIFICATION Product name Rodan Spark Gap Type RSG-802-BQL OKAYA ELECTRIC AMERICA, INC. Spec No. Data Version SS-024 Oct 30, 2003 First 1. Scope P: 2/5 This specification covers Rodan Spark Gap RSG-802-BQL.

Contextual Info: MYBEA01210CZT DATA Sheet 1 DC-DC Converter DATA Sheet MYBEA01210CZT/ MYBEA01210CZTB Feature: 1/8th Brick type Vin 36Vdc-75Vdc Vout 12Vdc Iout 10Adc 120W Application: This specification applies to DC-DC Converter MYBEA01210CZT/ MYBEA01210CZTB for telecommunication equipment.

Contextual Info: MYBEA01212AZT DATA Sheet 1 DC-DC Converter DATA Sheet MYBEA01212AZT/ MYBEA01212AZTB Feature: th 1/8 Brick type Vin 36Vdc-75Vdc Vout 12Vdc I out 12Adc 144W Application: This specification applies to DC-DC Converter MYBEA01212AZT for telecommunication equipment.

Contextual Info: MYBEA01212AZT DATA Sheet 1 DC-DC Converter DATA Sheet MYBEA01212AZT/ MYBEA01212AZTB Feature: 1/16th Brick type Vin 36Vdc-75Vdc Vout 12Vdc I out 12Adc 144W Application: This specification applies to DC‐DC Converter MYBEA01212AZT for telecommunication equipment.

Parallel resonance circuit induction furnace

Abstract: induction furnace circuit diagram induction furnace induction furnace schematic C3501 H63A MPD6D11 MPD6D20 schematic diagram induction furnace MPD6D209S
Contextual Info: MPD6D20*S Specification 1 DC-DC Converter Specification MPD6D20*S 1 . Application This specification applies to DC-DC Converter MPD6D20*S *:7,9 for telecommunication / data-communication equipment. For any other application, please contact us before using this product.

AB-PLLDRO-12.8GHZ

Abstract: dielectric resonator oscillator
Contextual Info: 12.8GHz Dielectric Resonator Oscillator AB-PLLDRO-12.8GHz Pb RoHS Compliant FEATURES: • High Carrier Frequency –12.8GHz • Wide operating temperature range • Linear Tuning Range • Low Power Design 300mA max • High Output Power (+12dBm min) • Excellent VSWR characteristics

AB-DRO-14.5GHZ

Contextual Info: 14.5GHz Dielectric Resonator Oscillator AB-DRO-14.5GHz Pb RoHS Compliant FEATURES: • High Carrier Frequency –14.5GHz • Wide operating temperature range • Linear Tuning Range • Low Power Design 300mA max • High Output Power (+12dBm min) • Excellent VSWR characteristics

MARKING PB

Contextual Info: 12.8GHz Dielectric Resonator Oscillator AB-PLLDRO-12.8GHz Pb RoHS /RoHS II Compliant FEATURES: • High Carrier Frequency –12.8GHz • Wide operating temperature range • Linear Tuning Range • Low Power Design 300mA max • High Output Power (+12dBm min)