MARKING 1PC Search Results

part MARKING k48

Abstract: marking bc p28 CMSD4448 W4W MARKING CM0Z15L CMZ5936B CM0Z11V CMZ5945B marking 6ca marking code ca2
Contextual Info: Marking Codes Continued Marking Code Part Number Marking Code 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1F)C 2AC 2B 2C 2CA 2F 2FC 2G 2PC 2QC 2P 3A 3B 3E 3F 3G 3J 3K 3L 3P 4A 4B 4C 4E

Contextual Info: SIEMENS NPN Silicon Switching Transistor SMBT4124 • High current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SMBT 4124 sZC Q68000-A8316 B SOT-23 E C Maximum Ratings

BZX 48c 6v8

Abstract: PT2369 code Cj5 CMXZ11VTO 7006S
Contextual Info: M arking Codes Marking Code Part Number 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1RC 2AC 2B 2C 2C A 2F 2FC 2G 2 PC 2Q C 2P 3A 3AE 3B 3CE 3E 3F 3G 3J 3K 3L 3P 3SE 4A 4B 4C 4E 4F 4G 4P

t3d01

Abstract: pin configuration of IC 1619 cp LM 3177 C16-256 MT4C16257
Contextual Info: PRELIMINARY M T 4C 16256/7/8/9 S 256K X 16 WIDE DRAM |U |I C R O N WIDE DRAM 2 5 6 K X 16 DRAM FAST-PAGE-MODE SELF REFRESH FEATURES OPTIONS P IN A S S IG N M E N T 4 0 -P in S O J T o p 4 0 -P in MARKING • Timing 70ns access -7 80ns access -8 • Write Cycle Access

Contextual Info: TC7SL00FJC7SL00FU 2-INPUT NAND GATE The TC7SL00 is a low voltage operative C2MOS 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology. Operating voltage OJqq opr ¡s 1~3V equivalent to 1pc or 2pcs of dry cell battery and it achives low power

Contextual Info: T 1PC- Issue NO. * ÎT Date of Issue : 2008^7^29 0 July 29, 2008 I ff K » Classification: B M A ftt fKt p, r_. Mff New L J Change LJ Renewal m PRODUCT SPECIFICATION FOR INFORMATION SI pdp £ ft Product Description I : Power Choke Coil pp s Product Part Number

tc7sl32

Contextual Info: TC7SL32FJC7SL32FU 2-INPUT OR GATE The TC7SL32 is a low voltage operative C2MOS 2-INPUT OR GATE fabricated with silicon gate C2MOS technology. Operating voltage V c c (o p r 's 1~3V equivalent to 1pc or 2pcs of dry cell battery and it achives low power dissipation.

Contextual Info: TOSHIBA TC7SLU04F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SLU04F, TC7SLU04FU INVERTER The TC7SLU04 is a low voltage operative C2MOS INVERTER fabricated with silicon gate C2MOS technology Operating voltage V (x (o p r 's 1~3V equivalent to 1pc

Contextual Info: TOSHIBA TC7SL00F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SL00F, TC7SL00FU 2-INPUT NAND GATE The TC7SL00 is a low voltage operative C2MOS 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology. Operating voltage V c c (o p r 's 1~3V equivalent to 1pc

TC7SL00

Abstract: TC7SL00F TC7SL00FU
Contextual Info: TOSHIBA TC7SL00F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SL00F, TC7SL00FU 2-INPUT NAND GATE The TC7SL00 is a low voltage operative C2MOS 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology. Operating voltage Vcc (opr 's 1~3V equivalent to 1pc

TC7SLU04F

Abstract: TC7SLU04FU
Contextual Info: TO SHIBA TC7SLU04F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SLU04F, TC7SLU04FU INVERTER The TC7SLU04 is a low voltage operative C2MOS INVERTER fabricated with silicon gate C2MOS technology Operating voltage Vcc (opr 's 1~3V equivalent to 1pc

Contextual Info: TOSHIBA TC7SL00F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SL00F, TC7SL00FU 2-INPUT NAND GATE The TC7SL00 is a low voltage operative C2MOS 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology. Operating voltage V c c (o p r 's 1~3V equivalent to 1pc

TC7SL02

Abstract: TC7SL02F TC7SL02FU
Contextual Info: TOSHIBA TC7SL02F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SL02F, TC7SL02FU 2-INPUT NOR GATE The TC7SL02 is a low voltage operative C2MOS 2-INPUT NOR GATE fabricated with silicon gate C2MOS technology. Operating voltage Vcc (opr 's 1~3V equivalent to 1pc

Contextual Info: TOSHIBA TC7SL02F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SL02F, TC7SL02FU 2-INPUT NOR GATE The TC7SL02 is a low voltage operative C2MOS 2-INPUT NOR GATE fabricated w ith silicon gate C2MOS technology. Operating voltage V c c (o p r 's 1~3V equivalent to 1pc

Contextual Info: TO SHIBA TC7SL04F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SL04F, TC7SL04FU INVERTER The TC7SL04 is a low voltage operative C2MOS INVERTER fabricated with silicon gate C2MOS technology. Operating voltage V ( x (o p r ) 's 1~3V equivalent to 1pc

TC7SL02F

Abstract: TC7SL02FU TC7SL32 TC7SL32F TC7SL32FU
Contextual Info: TOSHIBA TC7SL32F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SL32F, TC7SL32FU 2-INPUT OR GATE The TC7SL32 is a low voltage operative C2MOS 2-INPUT OR GATE fabricated with silicon gate C2MOS technology. Operating voltage V ( x (o p r ) 's 1~3V equivalent to 1pc

TC7SL02

Abstract: TC7SL02F TC7SL02FU
Contextual Info: TOSHIBA TC7SL02F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SL02F, TC7SL02FU 2-INPUT NOR GATE The TC7SL02 is a low voltage operative C2MOS 2-INPUT NOR GATE fabricated with silicon gate C2MOS technology. Operating voltage V c c (o p r 's 1~3V equivalent to 1pc

Contextual Info: TOSHIBA TC7SL08F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SL08F, TC7SL08FU 2-INPUT AND GATE The TC7SL08 is a low voltage operative C2MOS 2-INPUT AND GATE fabricated with silicon gate C2MOS technology. Operating voltage V c c (o p r 's 1~3V equivalent to 1pc

Contextual Info: TO SHIBA TC7SL04F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SL04F, TC7SL04FU INVERTER The TC7SL04 is a low voltage operative C2MOS INVERTER fabricated with silicon gate C2MOS technology. Operating voltage V (x (o p r is 1~3V equivalent to 1pc

Contextual Info: TOSHIBA TC7SLU04F/FU TO SH IBA CM OS D IG ITAL INTEGRATED CIRCU IT SILICON M ONOLITHIC TC7SLU04F, TC7SLU04FU INVERTER The TC7SLU04 is a low voltage operative C2MOS INVERTER fabricated w ith silicon gate C2MOS technology O perating voltage V ( x ( o p r ) is 1 ~ 3 V equivalent to 1pc

marking L4 toshiba

Contextual Info: TO SHIBA TC7SL32F/FU TO SH IBA CM OS D IG ITAL INTEGRATED CIRCU IT SILICON M ONOLITHIC TC7SL32F, TC7SL32FU 2-INPUT OR GATE The TC7SL32 is a low voltage operative C2MOS 2-INPUT OR GATE fabricated w ith silicon gate C2MOS technology. O perating voltage V ( x ( o p r ) is 1 ~ 3 V equivalent to 1pc

TC7SL02F

Abstract: TC7SL02FU TC7SL32 TC7SL32F TC7SL32FU
Contextual Info: TOSHIBA TC7SL32F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SL32F, TC7SL32FU 2-INPUT OR GATE The TC7SL32 is a low voltage operative C2MOS 2-INPUT OR GATE fabricated with silicon gate C2MOS technology. Operating voltage V ( x (o p r ) 's 1~3V equivalent to 1pc

TC7SL08F

Abstract: TC7SL08FU
Contextual Info: TOSHIBA TC7SL08F/FU TO SH IBA CM OS D IG ITAL INTEGRATED CIRCUIT SILICON M ONOLITHIC TC7SL08F, TC7SL08FU 2-INPUT AND GATE The TC7SL08 is a low voltage operative C2MOS 2-INPUT AN D GATE fabricated w ith silicon gate C2MOS technology. O perating voltage V c c (o p r 's 1 ~ 3 V equivalent to 1pc

tc7sl04

Contextual Info: TO SHIBA TC7SL04F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SL04F, TC7SL04FU INVERTER The TC7SL04 is a low voltage operative C2MOS INVERTER fabricated with silicon gate C2MOS technology. Operating voltage V c c (o p r is 1~3V equivalent to 1pc