MARKING 1CS Search Results

transistor Bc 580

Abstract: marking 1cs 847S transistor bc 100
Contextual Info: BC 847S NPN Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors in one package Type Marking Ordering Code Pin Configuration

transistor bc icbo nA npn

Abstract: 847S Q62702-C2372 marking 1cs
Contextual Info: BC 847S NPN Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package Type Marking Ordering Code

transistor bc 577

Abstract: transistor bc 103
Contextual Info: SIEMENS BC 847S NPN Silicon AF Transistor Array >For AF input stages and driver applications >High current gain >Low collector-emitter saturation voltage >Two galvanic internal isolated Transistors in one package F] FI FI liJ lU Type Marking Ordering Code

transistor bc 499

Abstract: 1CS K2 marking 1cs transistor Bc 580
Contextual Info: SIEMENS BC 847S NPN Silicon AF Transistor Array 1For AF input stages and driver applications •High current gain • Low collector-emitter saturation voltage >Two galvanic internal isolated Transistors in one package A R n 3 tr ETH "j>- Type Marking Ordering Code

Contextual Info: MT4LC4M4B1 L 4 MEG X 4 DRAM MICRON 4 MEG x 4 DRAM DRAM 3.3V, FAST PAGE MODE, OPTIONAL EXTENDED REFRESH FEATURES PIN ASSIGNMENT (Top View) OPTIONS MARKING • Timing 60ns access 70ns access -6 -7 • Packages Plastic SOJ (300 mil) DJ • Refresh Rate Standard 32ms period

jeida dram 88 pin

Abstract: dram card 68 pin
Contextual Info: PRELIMINARY t o i f m m iv i M T12D 88C 436 4 MEG x 36, 8 MEG x 18 IC DRAM CARD IC DRAM CARD 16 MEGABYTES 4 MEG x 36, 8 MEG x 18 FEATURES PIN ASSIGNMENT End View 88-Pin Card (DF-1) OPTIONS MARKING • Timing 60ns access 70ns access 80ns access -6 -7 -8 • Part Number Example: MT12D88C436-6

MARKING CODE CCB

Abstract: BC847S
Contextual Info: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see

BC846U/S

Abstract: BC846U
Contextual Info: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see

1DS sot363

Abstract: marking 1DS sot363
Contextual Info: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see

marking 1DS sot363

Abstract: 1Ds SOT363 BC846S BC846U BC847S BC847U SC74 1CS MARKING 5 pin IC marking ms marking 1cs
Contextual Info: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see

h11e

Contextual Info: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see

Contextual Info: BC847S NPN Silicon AF Transistor Array • For AF input stages and driver applications • High current gain 4 5 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package C1 B2 E2 6 5

TRANSISTOR 2N338

Abstract: 2N338 2N337 SFWM marking YJ AM 2N3384 2N338 JAN zn338 2 TMT 15-4
Contextual Info: iiU M 'U 'ivuw / gva ¿2 H o v te ttr 1971 SUPERSEDING _ Û1LL.-0-lÖÖÖO/ÖWD 4 Mafflh tOM MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSBTOR, NPN, SILICON, LOW-POWER TYPES 2N337 AND 2N338 This specification la mandatory for use bv all Departmeats and Agencies of the Department of Defense.

Frequency Control Products

Abstract: CB2V
Contextual Info: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book FREQUENCY CONTROL PRODUCTS vishay DALE vsE-db0020-1012 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

CDR03 receiver

Abstract: varistor 250v 592 PH 105k 250v ceramic disc Piezoelectric crystal 1mhz ultrasonic FUSE T2A 250v Motorola transistor smd marking codes smps 10w 5V 230 AC to 5V dc smps capacitor type 104z 50v SR 0805 X7R capacitor
Contextual Info: MLC Capacitors Tantalum Capacitors Microwave Capacitors Thin Film Capacitors Glass Capacitors Chip Resistors Networks EMI Filters Bulk Filters Saw Filters Dielectric Filters Resonators Oscillators Thin Film Inductors Thin Film Fuses Voltage Suppressors Acoustical Piezos

WX26 cable

Abstract: marking code H5C SMD Transistor xo-54be max 083 Crystal Oscillator, Leaded, Radial, 16.000 MHz smd transistor h5c XO-54B p l e sq3300 mto13fad XO-52BE
Contextual Info: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book FREQUENCY CONTROL PRODUCTS vishay DALE vsE-db0020-0507 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

5b1 transistor

Abstract: transistor 5b1 transistor bc qe TRANSISTOR MARKING TE SOT363 Marking 1cs sot marking 1cs FR1E marking code YA Transistor 6c2 transistor
Contextual Info: SIEMENS BC 847S NPN Silicon AF Transistor Array • For AF input stages and driver applications 4 • High current gain 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package 2 1 Type

HY64LD16162M

Abstract: HY64LD16162M-DF85E HY64LD16162M-DF85I
Contextual Info: HY64LD16162M Series Document Title 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Initial Jan. 04. ’ 01 Preliminary 1.1 Revised Jul. 03. ’ 01 Preliminary Jul.18. ’ 01 Preliminary Oct. 07. ‘ 01

HY64SD16162B

Abstract: HY64SD16162B-DF85E HY64SD16162B-DF85I
Contextual Info: HY64SD16162B Series Document Title 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Dec. 4. ’02 Preliminary Initial This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not

Contextual Info: Phototubes PHOTOTUBES •FEATURES AND APPLICATIONS FEATURES High sensitivity and high stability make phototubes very useful in chemical and medical analytical instruments which require high reliability. Phototubes feature a wide dynamic range from several picoamperes to several microamperes, providing signal

HYUD16162B

Abstract: HY64UD16162B HY64UD16162B-DF60E HY64UD16162B-DF60I HY64UD16162B-DF70E HY64UD16162B-DF70I
Contextual Info: HY64UD16162B Series Document Title 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Dec. 3. ’02 Preliminary Initial This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not

HYUD16162B

Abstract: HYUD16162
Contextual Info: HY64UD16162B Series Document Title 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Initial Dec. 3. ’02 Preliminary 1.1 DC Spec.변경 Apr. 21. ‘03 This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not

Contextual Info: HY64LD16322M Series Document Title 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Initial Jan. 04. ’ 01 Preliminary 1.1 Revised Jul. 03. ’ 01 Preliminary Jul.18. ‘ 01 Preliminary Oct. 06. ’ 01

r840

Contextual Info: Phototubes PHOTOTUBES •FEATURES AND APPLICATIONS FEATURES High sensitivity and high stability make phototubes very useful in chemical and medical analytical instruments which require high reliability. Phototubes feature a wide dynamic range from several picoamperes to several microamperes, providing signal