MARKING 1C7 Search Results

cFeon EN29

Abstract: cfeon en29lv320ab cFeon EN29LV320A cFeon EN eon en29
Contextual Info: EN29LV320A Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the

Contextual Info: EN29PL064 Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the

cFeon

Abstract: EN29PL064 3FE00 cFeon EN SA10 SA11 SA12 SA13 SA14 sa15-s
Contextual Info: EN29PL064 Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the

EN29PL032

Abstract: SA16 cFeon Flash chip
Contextual Info: EN29PL032 Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the

Contextual Info: EN29LV640T/B Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the

cFeon EN

Abstract: cFeon sg32 diode EN29LV640B 7400 4p toggle switch 555 data sheet cFeon EN29LV640B cFeon F data sheet 555
Contextual Info: EN29LV640T/B Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the

Contextual Info: EN29PL064/032 Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the

cFeon

Abstract: cFeon F cFeon EN29LV640B cFeon EN29lv640 A0-A21 EN29LV640b cfeon flash 72-SA
Contextual Info: EN29LV640T/B Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the

Contextual Info: s TAIWAN SEMICONDUCTOR SR 102 - S R 115 1.0 AMP. Schottky Barrier Rectifiers DO-41 RoHS COMPLIANCE 4 T 7 *. Features 40 4• - «■ .1C7 2.7j .000 ¡2.01 DUV Low p ow er loss, high efficiency. High current capability, Low VF. High re lia bility High surge current ca p a b ility.

JESD22-A115

Contextual Info: LF PA K PSMN1R7-25YLC N-channel 25 V 1.9 mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 01 — 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is

101G

Abstract: 105G 106G DBLS101G DBLS107G DBLS-104G 98-Q
Contextual Info: TAIWAN f f i SEMICONDUCTOR DBLS101G - DBLS107G Single Phase 1.0 AMP. Glass Passivated Bridge Rectifiers RoHS DBLS COMPLIANCE Features > 4- UL R ecognized File # E -326243 Glass passivated junction Ideal for printed circuit board ^ Reliable low cost construction utilizing molded

Contextual Info: 1?£8£I0PS 'ON 0NIMVHQ PIN INSERT T H E S E M A R K I N G S L E T T E R S IN DRAWING SHOW S O C K E T I N S E R T . FOR P I N I N S E R T MARK A S FOLLOWS._ SOCKET POF-O-212P(98. 02 ? V P IN I NSERT v h — h r- INSERT S P E C I F I C A T I ON

tef 6621

Abstract: ABOTT LRS1380
Contextual Info: LRS1380 Stacked Chip 32M x16 Flash and 4M (x16) SRAM ( Model No. : LRS1380) Spec No. : EL13 7 0 04 Issue Dat e: Jul y 5, 2001 SHARP LRS1380 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written permission

Contextual Info: 7/ STPR241 OCT STPR2420 CT SGS-THOMSON ra«M S»iD(S ULTRA FAST RECOVERY RECTIFIER DIODES A 1 -N-K CVJ < . SUITED FOR SMPS • LOW LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIME . HIGH SURGE CURRENT CAPABILiTY ■ HIGH AVALANCHE ENERGY CAPABILITY

FW723

Abstract: DS-7 marking E5 TRS.150 MT28F320A18
Contextual Info: 2 MEG x 16 1.8V ENHANCED+ BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F320A18 Low Voltage, Extended Temperature 0.15µm Process Technology FEATURES Ball Assignment 47-Ball FBGA • 32Mb block architecture Seventy-one erasable blocks: Eight 4K-word parameter blocks

sr43

Abstract: FF-47 TRS.150 CMOS linear array marking E5 transistor substitution chart MT28F320A18
Contextual Info: PRELIMINARY‡ 2 MEG x 16 1.8V ENHANCED+ BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F320A18A Low Voltage, Extended Temperature 0.12µm Process Technology Features Figure 1: 47-Ball FBGA • 32Mb block architecture Seventy-one erasable blocks: Eight 4K-word parameter blocks

Contextual Info: TOSHIBA 2SC2715 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS n r WÊF 7 7 m i m s wmr HIGH FREQUENCY AM PLIFIER APPLICATIONS. U n it in mm + CL5 2.5-CI3 + 0 .2 5 1.5 - a i 5 FEA TU RES : H igh Pow er G ain • t— EE- : Gpe = 2dB (Typ.) (f= 10.7M H z)

Contextual Info: STTH120L06TV Turbo 2 ultrafast high voltage rectifier Features and benefits • Ultrafast switching ■ Low reverse current ■ Low thermal resistance ■ Reduces switching and conduction losses Description The STTH120L06TV, which is using ST Turbo 2 600 V technology, is specially suited for use in

Contextual Info: PRELIMINARY COM’L: -7/10/12/15 IND: -10/12/15/20 The MACH5-512/MACH5LV-512 AMD£I M A C H 5 -5 1 2 /1 2 0 -7 /1 0 /1 2 /1 5 /2 0 M A C H 5 -5 1 2 /1 6 0 -7 /1 0 /1 2 /1 5 /2 0 M A C H 5 -5 1 2 /1 8 4 -7 /1 0 /1 2 /1 5 /2 0 M A C H 5 -5 1 2 /1 9 2 -7 /1 0 /1 2 /1 5 /2 0 M A C H 5 -5 1 2 /

2n2907 TO-92

Abstract: BC337 hie hre hfe bc337 hie c237a C714B BC337 hoe 2N3702 NATIONAL SEMICONDUCTOR C2371 C2379 hie for bc337
Contextual Info: Process National Semiconductor 3 S o -(pS 2_ 63 PNP M edium Row ^ 12. ( 2 13 2 1 Uj- D ESC R IPT IO N 3.020 Process 63 is a non-overlay, double-diffused, si I epitaxial device. Complement to Process 19. A PPLIC A T IO N This device was designed for use as general pure

sample code read and write flash memory

Abstract: MARKING flash 28F MT28F320A18
Contextual Info: PRELIMINARY‡ 2 MEG x 16 1.8V ENHANCED+ BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F320A18 Low Voltage, Extended Temperature 0.15µm Process Technology FEATURES Ball Assignment 48-Ball FBGA • 32Mb block architecture Seventy-one erasable blocks: Eight 4K-word parameter blocks

Contextual Info: 2 MEG x 16 1.8V ENHANCED+ BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F320A18 Low Voltage, Extended Temperature 0.15µm Process Technology FEATURES Ball Assignment 47-Ball FBGA 32Mb block architecture • Seventy-one erasable blocks: • Eight 4K-word parameter blocks

MT28F320A18

Contextual Info: 2 MEG x 16 1.8V ENHANCED+ BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F320A18 Low Voltage, Extended Temperature 0.15µm Process Technology FEATURES Ball Assignment 47-Ball FBGA 32Mb block architecture • Seventy-one erasable blocks: • Eight 4K-word parameter blocks

ZXTN25060BZTA

Abstract: TS16949 ZXTN25060BZ SOT89 transistor marking 5A marking 1c7
Contextual Info: ZXTN25060BZ 60V, SOT89, NPN medium power transistor Summary BVCEX > 150V BVCEO > 60V BVECO > 6V IC cont = 5A VCE(sat) < 70mV @ 1A RCE(sat) = 48m⍀ PD = 2.4W Description C Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in