MARKING 1AJ Search Results

Contextual Info: ADVANCE MT2D48 4 MEG X 8 DRAM MODULE MICRON I TECHNOLOGY. INC DRAM 4 MEG M O D U LE IV IU U U U L 4 MEGABYTE, 5V, FAST PAGE MODE X 8 FEATURES OPTIONS MARKING • Timing 60ns access 70ns access -6 -7 • Packages 30-pin SIMM M PIN ASSIGNMENT Front View 30-Pin SIMM

marking code P76

Abstract: Fz125 r60s1 TEA7069
Contextual Info: T H IR D ANGLE P R O J E C T IO N | RA T ED V O L T A GE E C Q E 1 A 1 0 3 FZ 12 5 V A C li n 1A 1 2 3 ( ) F Z II n 1A1530FZ II // 1 A 1 8 3 ( F Z ll n 1A2230FZ ll 1A 2 7 3 FZ ll ff 1 A 3 3 3 0 F Z ll n 1A3930FZ ll ll 1 A 4 7 3 ( ) F Z II ii 1 A 5 6 3 ( ) FZ

1A223

Abstract: 1A393 1A474 1a japan 59 1A473 1A333
Contextual Info: THIRD ANGLE PROJECT IOU | E C Q E 1A 1 0 3 n 1A 1 2 3 // 1A 1 5 3 // 1A 1 8 3 // 1 A 2 2 3 » 1A273 // 1 A 3 3 3 // 1 A 3 9 3 » 1A473 » 1A563 // 1 A 6 8 3 h 1A823 // 1A 1 0 4 U 1 A 12 4 // 1A 15 4 // 1 A 1 8 4 // 1 A 2 2 4 // 1 A 2 7 4 // 1 A 3 3 4 // 1 A 3 9 4

Contextual Info: THIRD ANGLE P R OJECTION | RATED VOLTAGE E C Q E 1A 1 0 3 FB 12 5 V A C H ' « 1A 1 2 3( ) FB n 11 1A 153 ( ) FB li « 1A 1 8 3 ( ) FB n // I A 2 2 3 0 F B ii n 1A273 0 F B ii // 1A333 0 F B II // 1 A 3 9 3 ( ) F B ii tt 1A 4 7 3 ( ) FB il // 1A563 0 F B

5I153

Abstract: TEA7069
Contextual Info: THIRD ANGLE PROJECTION | RATED VOLTAGE E C Q E 1A 1 0 3 FB 12 5 V A C u ' n 1A 1 2 3( ) FB n // 1A 153 ( ) FB H n 1A 1 8 3 ( ) FB n Il 1A223 0 F B it » 1A2 73 0 F B u Il 1 A 3 3 3 0 F B II il 1 A 3 9 3 0 F B it » 1A 4 7 3 ( ) FB II n 1 A 5 63 0 F 8 n

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC4245 TV TUNER, UHF MIXER APPLICATIONS. Unit in iran VHF-UHF BAND RF AMPLIFIER APPLICATIONS. 2.1 ± 0.1 1. 25 ± 0 . 1 oe +i 3- 2 -Efl MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO 30

LS4103

Contextual Info: o X LS4-R10K .10 LS4-R12K .12 LS4-R15K .15 LS4-R18K .18 LS4-R22K .22 LS4-R27K .27 LS4-R33K .33 LS4-R39K .39 LS4-R47K .47 LS4-R56K .56 LS4-R68K .68 LS4-R82K .82 LS4-1R0K 1.0 LS4-1R2K 1.2 LS4-1R5K 1.5 LS4-1R8K 1.8 IS 4 -2R 2 K 2.2 LS4-2R7K 2.7 LS4-3R3K 3.3 LS4-3R9K

Contextual Info: CLC501 High Speed, Output Clamping Op Amp *Space level version also available. General Description The CLC501 is a high speed current-feedback op amp with the unique feature of output voltage clamping. This feature allows both the maximum positive VHIGH and negative

Contextual Info: CLC401 Fast Settling, Wideband High Gain Monolithic Op Amp General Description The CLC401 is a wideband, fast settling op amp designed for applications requiring gains greater than ± 7. Constructed using an advanced complementary bipolar process and a proprietary design, the CLC401 features dynamic performance far beyond that of typical high speed monolithic op

Contextual Info: CLC401 Fast Settling, Wideband High Gain Monolithic Op Amp General Description The CLC401 is a wideband, fast settling op amp designed for applications requiring gains greater than ± 7. Constructed using an advanced complementary bipolar process and a proprietary design, the CLC401 features dynamic performance far beyond that of typical high speed monolithic op

lg power supply

Contextual Info: CLC401 Fast Settling, Wideband High Gain Monolithic Op Amp General Description The CLC401 is a wideband, fast settling op amp designed for applications requiring gains greater than ± 7. Constructed using an advanced complementary bipolar process and a proprietary design, the CLC401 features dynamic performance far beyond that of typical high speed monolithic op

marking atoa

Contextual Info: MIL-M-38510/150C 7 November 1985 SOPCRSEDING— M IL-M-38510/150B USAF 26 January 1976 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, BIPOLAR, TTL, MAGNITUDE COMPARATORS, MONOLITHIC SILICON This specification Is approved for use by all Depart­ ments and Agencies of the Department of Defense.

Contextual Info: MT2D25632, MT4D51232 256K, 512K x 32 DRAM MODULES U IIC Z R O N 256K, 512K x 32 DRAM MODULE 1, 2 MEGABYTE, 5V, FAST PAGE MODE FEATURES PIN ASSIGNMENT (Front View • JEDEC- and industry-standard pinout in a 72-pin single-in-line memory module (SIMM) • High-performance CMOS silicon-gate process

embedded powerpc 460

Abstract: TS68EN360 powerpc 460 Profibus UART PC860 TSPC860 spll 1086 3B30D CDMA system implementation receiver
Contextual Info: Features H PowerPC single issue integer core. H Precise exception model. H Extensive system development support - on-chip watchpoints and breakpoints, - program flow tracking, - On-chip emulation OnCE development interface. H High performance (Dhrystone 2.1: 52 MIPS @ 50 MHz, 3.3V, 1.3 Watts total power).

Contextual Info: MT8D132 X , MT16D232(X) 1 MEG, 2 MEG x 32 DRAM MODULES MICRON I TÉCHNOICSY INC. DRAM 1 MEG, 2 MEG x 32 II E IV IV J U U L C 4. 8 MEGABYTE, SV, FAST PAGE OR EDO PAGE MODE FEATURES PIN ASSIGNMENT (Front View) • JEDEC- and industry-standard pinout in a 72-pin,

la 7184

Contextual Info: MICRON 2, 4, 8 MEG X 72 BUFFERED DRAM DIMMs TECHNOLOGY. INC. DRAM MODULE MT9LD272 X MT18LD472(F)(X) MT36LD872(F)(X) FEATURES PIN ASSIGNMENT (Front View) • JEDEC-standard ECC pinout in a 168-pin, dual in-line memory module (DIMM) • 16MB (2 Meg x 72), 32MB (4 Meg x 72),

KF 13003 F

Abstract: KF 13003 tt442 13003 HJ mxl 5007 54HCT14 54HC14 HJ 13003 marking 2U diode t5 2yl1
Contextual Info: MIL-M-38510/657 30 S e p t e m b e r 1 9 8 6 MILITARY SPECIFICATION M I C R O C I R C U I T S , DI GI TA L, HIGH SPEED, CMOS, BUFFER GATES, MONOLITHIC SILICON T h i s s p e c i f i c a t i o n is a p p r o v e d ments and Agencies of the 1. f o r u s e b y all D e p a r t ­

bcm2835

Abstract: BROADCOM BCM2835
Contextual Info: 1 1 1 1 1 1 BCM2835 ARM Peripherals 2012 Broadcom Corporation. All rights reserved Broadcom Europe Ltd. 406 Science Park Milton Road Cambridge CB4 0WW Table of Contents 11 Introduction 1.11 Overview 1.21 Address map 1.2.11 Diagrammatic overview 1.2.21 ARM virtual addresses standard Linux kernel only

3TE445

Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
Contextual Info: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group

SN74ALS123

Abstract: SN7401 74LS424 54175 SN74298 SN74265 SN74LS630 SN74LS69 National Semiconductor Linear Data Book Transistor AF 138
Contextual Info: INDEX • FUNCTIONAL SELECTION GUIDE • NUMERICAL FUNCTION INTERCHANGEABILITY GUIDE GENERAL INFORMATION AND EXPLANATION OF NEW LOGIC SYMBOLS ORDERING INSTRUCTIONS AND MECHANICAL DATA 54/74 SERIES OF COMPATIBLE TTL CIRCUITS • PIN OUT DIAGRAMS 54/74 FAMILY SSI CIRCUITS