MARKING 19S Search Results

c639

Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
Contextual Info: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04

MARKING 68W SOT-23

Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
Contextual Info: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06

c639

Abstract: c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05

transistor Bc 540

Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W

transistor C639

Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W

ELF450H

Abstract: ELF450D ELF22V025A ELF21V014S ELF22V070B ELF18D450D ELF20N013A ELF21V017S ELF22V040B ELF217
Contextual Info: Line Filters Panasonic • Series N, High N • Type 20N, 21N Dimensions in mm not to scale Recommended PW B piercing plan Marking • Standard Parts (Series N : 20N) Part No. Marking ELF20N006A ELF20N008A ELF20N010A ELF20N013A ELF20N015A ELF20N016A ELF20N018A

TRANSISTOR 131-6 BJ 946

Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Contextual Info: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise

transistor marking 19P

Abstract: transistor wae
Contextual Info: BFQ 19P NPN Silicon RF Transistor • For low-distortion broadband amplifiers in antenna and telecommunications systems at collector currents from 10 to 70 mA. For new design refer to BFQ 19S Type Marking Ordering code tape and reel Package BFQ 19P FE Q 62702- F 1 060

npn transistor sot-89 MARKING AG

Contextual Info: NPN Silicon RF Transistor BFQ 19S • For low-noise, low-distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 10 to 70 mA. 6 CECC-type available: C E C C 50002/259. Type Marking Ordering code tape and reel

bond wire gold

Contextual Info: Package Details - SOT-223C Mechanical Drawing Lead Code: Part Marking: Full Part Number. Reference individual device datasheet. Mounting Pad Geometry Dimensions in mm Central TM Semiconductor Corp. w w w. c e n t r a l s e m i . c o m R1 (5-November 2007)

Contextual Info: S C 1 7 i .OA : Outline Drawings k _ GENERAL USE RECTIFIER DIODE : Features ESD-Proof • * B S 8* A f » m Surface m ount device •K « « t4 i/jv : Marking High reliability • Applications • V iSftd fE O H General purpose rectifier applications

Contextual Info: Package Details - SOD-882L Mechanical Drawing Lead Code: 1 Cathode 2) Anode Part Marking: One Character Alpha/Numeric Code Mounting Pad Geometry Dimensions in mm) Central TM Semiconductor Corp. w w w. c e n t r a l s e m i . c o m R0 (19-September 2007)

2N5248

Abstract: jfet to 92 jfet marking code JFET APPLICATIONS
Contextual Info: 2N5248 w w w. c e n t r a l s e m i . c o m N-CHANNEL SILICON JFET The CENTRAL SEMICONDUCTOR 2N5248 is an N-Channel silicon JFET designed for high frequency amplifier and oscillator applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: TA=25°C

ELF450D

Abstract: ELF450H ELF20N008A elf450j ELF228F elf227f ELF22V020A ELF20N010A ELF20N013A ELF20N016A
Contextual Info: Line Filters • Series N, High N ● Type 20N, 21N Recommended PWB piercing plan Dimensions in mm not to scale 29.0±1.0 Marking 11.00±0.05 11.0±0.5 4 20.0±1.0 4.0±1.0 19.5±0.5 1 4–f1.2±0.1 2 19.50±0.05 3 4–f0.8±0.1 32.0±1.0 ● Standard Parts (Series N : 20N)

Contextual Info: MICRON B M T4C16256/7/8/9 L 256K X 16 WIDE DRAM BCMICDNDUCTaH. WC WIDE DRAM 256K x 16 DRAM LOW POWÉR, EXTENDED REFRESH FEATURES MARKING • T im ing 60ns access 70ns access 80ns access • W rite Cycle Access BYTE o r W ORD via WE nonm askable BYTE or W ORD via CAS

ELF850

Abstract: ELF860C ELF656V ELF650B ELF850C ELF850B elf666a ELF656Y ELF18D860B ELF650C
Contextual Info: Line Filters n Series N, High N Recommended PWB piercing plan Marking 29.0 1.0 l Type 20N, 21N Dimensions in mm not to scale ± ± 11.00 0.05 ± ± 11.0 0.5 ± 19.50 0.05 ± 20.0 1.0 " 4.0 1.0 ± 19.5 0.5  ± B 4Ð 1.2 0.1 ± 32.0 1.0 ! B ± 4Ð 0.8 0.1

ez920

Abstract: LH5160N LH5160 LH5160HN-10L RC-1009B
Contextual Info: n SHARP 2 8 19SLJ TO: •K ìlì - ì R E N C E D E V I C E S P E C I F I C A T I O N FOR 64K bit S T A T I C R A M 8,192 X 8bit M O D E L NO. L H 5 1 6 0 H N - 1 ( LH5160N8 OL ) SP E C N O . : E L 0 2 Y 0 1 1 ISSUE: CUSTOMERS D e c . 13.1990 APPROVAL DATE:

Contextual Info: R E U . /ED JUN 2 6 19S3 DOPUNT REVISIONS DESCRIPTION LETTER NO NOTES: A REVISED PER ECO 1. DISSIPATION FACTOR: .005 MAX @ 2 5 ' C, 1 kHZ. ER <£18 2. CAPACITANCE: 180 n F -2 2 0 nF. 3. DIELECTRIC WITHSTANDING VOLTAGE: 2.5 kV RATED, 3.5 kV PROCESS FOR 2 HOURS @ 100* C AND

1N589

Abstract: IN5809 1v500 1M5811 JANTX 1N5811 DIODE 1N5804 1N5896 j 5804 ns802 1N5809 equivalent
Contextual Info: MIL SPECS 44E » The documentation and proc*»» conversion m w r M necessary to comply with this revision shall be completed by 25 Apr 93. • □□□□155 0032612 7 ■ M I L S 1- 1 IINCH-POUNDj I . — I | j j ML-S-19S00/477B 25 January 1993

MARKING 19S

Abstract: sot marking code ZS
Contextual Info: SIEMENS BFQ 19S NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 10 mA to 70 mA • CECC-type available: C E C C 50 002/259 ESP: Electrostatic discharge sensitive device, observe handling precaution!

LH5160

Contextual Info: n SHARP 2 8 19SLJ TO: •K ìlì - ì R E N C E D E V I C E S P E C I F I C A T I O N FOR 64K bit S T A T I C R A M 8,192 X 8bit M O D E L NO. L H 5 1 6 0 H N - 1 ( LH5160N8 OL ) SP E C N O . : E L 0 2 Y 0 1 1 ISSUE: CUSTOMERS D e c . 13.1990 APPROVAL DATE:

MARKING 19S

Abstract: bfq 85 fgs npn Q62702-F1088 Marking Code FGs
Contextual Info: BFQ 19S NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 10 mA to 70 mA • CECC-type available: CECC 50 002/259 ESD: Electrostatic discharge sensitive device, observe handling precaution!

transistor 1p3

Abstract: BFQ19P MARKING 19S ic MARKING FZ 62702-F1060 F1060 e23s
Contextual Info: 47E D ê23SbGS DDSMMST 7 « S I E 6 7 ^ 3 3 BFQ 19P NPN Silicon RF Transistor - SIEMENS AKTI ENGESELLSCHAF • For low-distortion broadband amplifiers in antenna and telecommunications systems at collector currents from 10 to 70 mA. For new design refer to BFQ 19S

BFQ19S

Abstract: MARKING 19S bfq 85
Contextual Info: BFQ 19S NPN Silicon RF Transistor 1
For low noise, low distortion broadband 2 amplifiers in antenna and 3 telecommunications systems up to 1.5 GHz at collector currents from 10 mA to 70 mA 2 VPS05162 ESD: Electrostatic discharge sensitive device, observe handling precaution!