MARKING 122 TOSHIBA Search Results

7WU04F

Contextual Info: TOSHIBA TC7WU04F/FU TO SH IBA CM OS D IG ITAL INTEGRATED CIRCU IT SILICON M ONOLITHIC TC7WU04F, TC7WU04FU 3 INVERTER The TC7W U04 is a high speed C2MOS INVERTER fabricated with silicon gate C2MOS technology. It achives the high speed operation sim ilar to equivalent

Contextual Info: TOSHIBA 2SC4322 Transistor U n it in m m i-0 5 2 5 -0 3 -0.25 1.5 - 0 . 1 5 , Silicon NPN Epitaxial Planar Type VHF ~ UHF Band Low Noise Amplifier Applications - o o o Egi F e a tu re s • Low Noise Figure, High Gain + • NF = 1 ,8dB, IS21ei2 = 7.5dB f = 2GHz

7WU04F

Abstract: 7wu04 TC7WU04FU TC7WU04 TC7WU04F
Contextual Info: TOSHIBA TC7WU04F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7WU04F, TC7WU04FU 3 INVERTER The TC7WU04 is a high speed C2MOS INVERTER fabricated with silicon gate C2MOS technology. It achives the high speed operation similar to equivalent

S2V 97

Contextual Info: TOSHIBA 2SK2496 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE 2 S K2 49 6 Unit in mm SHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure : NF = 0.9dB f=12GHz High Gain : Ga = lldB (f=12GHz) MAXIMUM RATINGS (Ta = 25°C)

transistor c 3228

Abstract: 2SK2496 2SK24
Contextual Info: TOSHIBA 2SK2496 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE 2SK2496 SHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : NF = 0.9dB f=12GHz • High Gain Unit in mm 2.16±0.2 : Ga = lld B (f=12GHz) MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: SSM6L40TU TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L40TU ○ Power Management Switch Applications ○ High-Speed Switching Applications Characteristic Symbol Rating Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS ±20

Marking H2

Abstract: 3SK257
Contextual Info: TO SH IBA 3SK257 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3SK257 TV TUNER, VHF RF AMPLIFIER APPLICATIONS FM TUNER APPLICATIONS TV TUNER, UHF RF AMPLIFIER APPLICATIONS • Superior Cross Modulation Performance. • Low N oise Figure : NF = 2.0dB Typ.

transistor c 3228

Abstract: transistor a 1837 2SK2496
Contextual Info: TOSHIBA 2SK2496 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE 2SK2496 Unit in mm SHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure : NF = 0.9dB f=12GHz High Gain : Ga = lldB (f=12GHz) 2 .1 6 ± 0 .2 MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: SSM6P47NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS VI SSM6P47NU Power Management Switch Applications 1.5V drive Low ON-resistance: RDS(on) = 242 mΩ (max) (@VGS = -1.5 V) RDS(on) = 170 mΩ (max) (@VGS = -1.8 V) RDS(on) = 125 mΩ (max) (@VGS = -2.5 V)

SSM6P47NU

Contextual Info: SSM6P47NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS VI SSM6P47NU High-Speed Switching Applications Power Management Switch Applications Unit: mm 2.0±0.1 B A 2.0±0.1 1.5V drive Low ON-resistance:Ron = 242 mΩ (max) (@VGS = -1.5 V)

Contextual Info: SSM6P47NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS VI SSM6P47NU Power Management Switch Applications 1.5V drive Low ON-resistance:RDS(on) = 242 m (max) (@VGS = -1.5 V) RDS(on) = 170 m (max) (@VGS = -1.8 V) RDS(on) = 125 m (max) (@VGS = -2.5 V)

Contextual Info: SSM6P47NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS VI SSM6P47NU Power Management Switch Applications 1.5V drive Low ON-resistance:RDS(on) = 242 mΩ (max) (@VGS = -1.5 V) RDS(on) = 170 mΩ (max) (@VGS = -1.8 V) RDS(on) = 125 mΩ (max) (@VGS = -2.5 V)

Contextual Info: SSM6P47NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS VI SSM6P47NU Power Management Switch Applications 1.5V drive Low ON-resistance:RDS(on) = 242 mΩ (max) (@VGS = -1.5 V) RDS(on) = 170 mΩ (max) (@VGS = -1.8 V) RDS(on) = 125 mΩ (max) (@VGS = -2.5 V)

Contextual Info: SSM6L40TU TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L40TU Power Management Switch Applications High-Speed Switching Applications 1 6 2 5 3 4 Symbol Rating Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS ±20 V DC ID 1.6

SSM6L40TU

Abstract: SSM6L40
Contextual Info: SSM6L40TU TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L40TU ○ Power Management Switch Applications ○ High-Speed Switching Applications 1 6 2 5 3 4 Symbol Rating Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS ±20 V

k3374

Abstract: 2SK3374
Contextual Info: 2SK3374 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type F-MOSV 2SK3374 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 4.0 W (typ.) · High forward transfer admittance: ïYfsï = 0.8 S (typ.) · Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)

Contextual Info: 2SK3472 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3472 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.) • High forward transfer admittance: |Yfs| = 0.8 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)

Contextual Info: 2SK3472 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3472 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.) • High forward transfer admittance: |Yfs| = 0.8 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)

Contextual Info: SSM6N40TU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM6N40TU ○ Power Management Switch Applications ○ High-Speed Switching Applications Unit: mm 2.1±0.1 1 6 2 5 3 4 Symbol Rating Unit Drain-source voltage VDSS 30 V Gate-source voltage

Contextual Info: SSM6J53FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6J53FE ○ High-Speed Switching Applications ○ Power Management Switch Applications 6 2 5 3 4 Pb free Characteristics Symbol Rating Unit Drain-Source voltage VDS -20 V Gate-Source voltage

k3472

Abstract: 2SK3472
Contextual Info: 2SK3472 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3472 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.) • High forward transfer admittance: |Yfs| = 0.8 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)

k3472

Abstract: 2SK3472 MJ103
Contextual Info: 2SK3472 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS V 2SK3472 Switching Regulator Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 4.0 mΩ (typ.) • High forward transfer admittance: |Yfs| = 0.8 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)

k3374

Abstract: 2SK3374
Contextual Info: 2SK3374 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3374 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 0.8 S (typ.) •

SSM6J53FE

Contextual Info: SSM6J53FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6J53FE ○ High-Speed Switching Applications ○ Power Management Switch Applications 6 2 5 3 4 Pb free Characteristics Symbol Rating Unit Drain-Source voltage VDS -20 V Gate-Source voltage