MARKING 02 NPN Search Results

marking 65B

Abstract: BCW65B BCW65A BCW65C
Contextual Info: CDIIL BCW65A, BCW65B BCW65C GENERAL PURPOSE TRANSISTOR N-P-N transistor Marking BCW65A = EA BCW65B = EB BCW65C = EC PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0 2.8 0.14 0.48 0.38 3 Pin configuration 2.6 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR _1 .02 _

max6032

Abstract: BCW65B BCW65C BCW65A
Contextual Info: BCW65A, BCW65B BCW65C GENERAL PURPOSE TRANSISTOR N-P-N transistor Marking BCW65A = EA BCW65B = EB BCW65C = EC PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm J3.0 2.8" 0.14 0.48 0.38 3 Pin configuration 2.6 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR _1 . 02 _ 0.89

PB8110

Abstract: PBSS8110Z PBSS9110Z SC-73
Contextual Info: PBSS8110Z 100 V, 1 A NPN low VCEsat BISS transistor Rev. 02 — 8 January 2007 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.

PB8110

Abstract: PBSS8110Z
Contextual Info: PBSS8110Z 100 V, 1 A NPN low VCEsat BISS transistor Rev. 02 — 8 January 2007 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.

BFP196TW

Contextual Info: BFP196T/BFP196TR/BFP196TW Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Features For low noise, low distortion broadband amplifiers in telecommunications and antenna systems and power

PDTA123YT

Abstract: PDTC123YT
Contextual Info: PDTA123YT PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ Rev. 02 — 11 June 2004 Objective data 1. Product profile 1.1 General description PNP resistor-equipped transistor. NPN complement: PDTC123YT. 1.2 Features • Built-in bias resistors

PDTA113ET

Abstract: PDTC113ET
Contextual Info: PDTC113ET NPN resistor-equipped transistor; R1 = 1 kΩ, R2 = 1 kΩ Rev. 02 — 8 April 2004 Objective data sheet 1. Product profile 1.1 General description NPN resistor-equipped transistors. PNP complement: PDTA113ET. 1.2 Features • Built-in bias resistors

BC817

Abstract: PDTB123TK PDTB123TS PDTB123TT PDTD123T PDTD123TK PDTD123TS PDTD123TT SC-43A SC-59A
Contextual Info: PDTD123T series NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open Rev. 02 — 21 July 2005 Product data sheet 1. Product profile 1.1 General description 500 mA NPN Resistor-Equipped Transistors RET family. Table 1: Product overview

Transistor SMD marking code NV

Abstract: TRANSISTOR SMD MARKING CODES MARKING CODE SMD IC data sheet for all smd components double match transistor K TRANSISTOR SMD MARKING CODE SOT363 6 BC847BS TRANSISTOR SMD npn MARKING CODE TRANSISTOR SMD MARKING CODE UA BCM847BS
Contextual Info: BCM847BS NPN matched double transistor; ∆hFE = 10 % Rev. 02 — 6 April 2005 Product data sheet 1. Product profile 1.1 General description NPN matched double transistor in a SOT363 SC-88 SMD plastic package. Matched version of BC847BS. The transistors are fully isolated internally.

TRANSISTOR SMD MARKING CODE w6

Abstract: SMD transistor code P npn transistor w6 NXP TRANSISTOR SMD MARKING CODE SOT23 PBHV8115T PBHV9115T TRANSISTOR SMD MARKING CODE 26 MARKING CODE SMD IC
Contextual Info: PBHV8115T 150 V, 1 A NPN high-voltage low VCEsat BISS transistor Rev. 02 — 9 December 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

PBHV8540T

Abstract: PBHV9040T IEC 62-50 code MARKING CODE SMD IC
Contextual Info: PBHV8540T 500 V, 0.5 A NPN high-voltage low VCEsat BISS transistor Rev. 02 — 14 January 2009 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.

BCP55

Abstract: BCX55 PBSS4160V PBSS5160V
Contextual Info: PBSS4160V 60 V, 1 A NPN low VCEsat BISS transistor Rev. 02 — 31 January 2005 Product data sheet 1. Product profile 1.1 General description Low VCEsat (BISS) NPN transistor in a SOT666 plastic package. PNP complement: PBSS5160V. 1.2 Features • ■ ■

BCP52

Abstract: BCX52 PBSS4160V PBSS5160V 14508
Contextual Info: PBSS5160V 60 V, 1 A PNP low VCEsat BISS transistor Rev. 02 — 4 April 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signals (BISS) transistor in a SOT666 plastic package. NPN complement: PBSS4160V.

SOT353-1 footprint

Abstract: SC-88A npn PMP4201G PMP4201Y PMP4501G PMP4501Y PMP5501G PMP5501Y MARKING CODE SMD IC tr2 smd
Contextual Info: PMP4501G; PMP4501Y NPN/NPN matched double transistors Rev. 02 — 14 February 2006 Product data sheet 1. Product profile 1.1 General description NPN/NPN matched double transistors in small Surface Mounted Device SMD plastic packages. The transistors in the SOT363 (SC-88) package are fully isolated internally.

smd transistor xb

Abstract: msa-420 transistor smd xb PBSS4160K PBSS5160K SC-59A MARKING CODE SMD IC TRANSISTOR Marking XB PNP TRANSISTOR SMD MARKING CODE 2x
Contextual Info: PBSS4160K 60 V, 1 A NPN low VCEsat BISS transistor Rev. 02 — 18 July 2005 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT346 (SC-59A) Surface Mounted Device (SMD) plastic package.

PUMH14

Abstract: PUMD14 PEMB14 PEMD14 PEMH14 PUMB14 PEMB1
Contextual Info: PEMH14; PUMH14 NPN/NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = open Rev. 02 — 29 April 2005 Product data sheet 1. Product profile 1.1 General description NPN/NPN Resistor-Equipped Transistors RET . Table 1: Product overview Type number Package

PEMB19

Abstract: PEMD19 PEMH19 PUMB19 PUMD19 PUMH19 PEMB1
Contextual Info: PEMH19; PUMH19 NPN/NPN resistor-equipped transistors; R1 = 22 kΩ, R2 = open Rev. 02 — 2 May 2005 Product data sheet 1. Product profile 1.1 General description NPN/NPN Resistor-Equipped Transistors RET . Table 1: Product overview Type number Package Philips

marking code A09 SMD Transistor

Contextual Info: PBSS3540E 40 V, 500 mA PNP low VCEsat BISS transistor Rev. 02 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package. NPN complement: PBSS2540E.

smd TRANSISTOR code marking 2007

Abstract: 2PB1424 2PD2150 TRANSISTOR SMD MARKING CODE 3x sot89 footprint nxp marking code M2
Contextual Info: 2PD2150 20 V, 3 A NPN low VCEsat BISS transistor Rev. 02 — 2 January 2007 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT89 (SC-62/TO-243) flat lead Surface-Mounted Device (SMD) plastic package.

FMBT4401

Abstract: Transistor Equivalent list
Contextual Info: Formosa MS NPN Epitaxial Planar Transistor FMBT4401 List List. 1 Package outline. 2

PDTD113ZT

Abstract: TRANSISTOR SMD MARKING CODES BC817 PDTB113ZT PDTD113ZK PDTD113ZS
Contextual Info: PDTD113ZT NPN 500 mA, 50 V resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ Rev. 02 — 23 March 2009 Product data sheet 1. Product profile 1.1 General description NPN 500 mA Resistor-Equipped Transistor RET in a small Surface-Mounted Device (SMD) plastic package.

PUSH PULL MOSFET DRIVER

Abstract: PMD2001D SC74 marking 345
Contextual Info: PMD2001D MOSFET driver Rev. 02 — 28 August 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP transistor pair connected as push-pull driver in a SOT457 SC-74 Surface-Mounted Device (SMD) plastic package. 1.2 Features • ■ ■

PEMD17

Abstract: PEMH17 PEMB17 PUMB17 PUMD17 PUMH17 14461 TR16 PEMB1
Contextual Info: PEMH17; PUMH17 NPN/NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ Rev. 02 — 3 May 2005 Product data sheet 1. Product profile 1.1 General description NPN/NPN Resistor-Equipped Transistors RET . Table 1: Product overview Type number Package

Contextual Info: PBSS9110X 100 V, 1 A PNP low VCEsat BISS transistor Rev. 02 — 22 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/ TO-243) SMD plastic package. NPN complement: PBSS8110X.