MARK U1 Search Results

JRC 14

Abstract: jrc 8 pin MARK H1 SOT-89 MARK MARK D2 SOT23 jrc 14 pin MARK C3 SOT23 56A1 SDMP30 144L1
Contextual Info: STANDARD MARK LAYOUT 7. STANDARD MARK LAYOUT The standard mark layout of our packages are as follows. For further information, please contact to our sales offices. <Lead Insertion Type> Name Number of pins TO-220 3, 4 ,5 Mark Layout Device name JRC Logo Device name

ATXMEGA128A1-AU

Abstract: ATXMEGA128A1 STK600-ATXMEGA1281A1 BLM21AG102SN1D N-7075
Contextual Info: 5 4 3 Place close to U1: 95 Mark with silkprint "AREF+" 2 1 ATxmega1281A1 MCU card AREF0 C2 N.M PCB1 L2 Place close to U1, pin100 GND VTG C8 BLM21AG102SN1D 100n Place close to U1:96 Mark with silkprint "AREF-" AREF1 GND C7 N.M GND GND VTG GND L1 100 99 98

E3M-VG21

Abstract: washing machine ladder diagram Wiring Diagram Great wall automatic water level controller circuit diagram remote fire sensor E3M-VG16 omron E3E2 E39-L132 Wiring Diagram remote Great wall E3M-VG26
Contextual Info: Color Mark Sensor E3M-V Great for Irregularities and Lamination, an Easy-to-use Mark Sensor Be sure to read Safety Precautions on page 5. Ordering Information Sensors Green Appearance Connection method Sensing distance Spot diameter Model NPN output PNP output

PBT-GF30

Abstract: PBT-GF-30 PBTGF-30 JAHL-10220 PBT-GF30 1.0 PBT-GF30 CONNECTOR JACS-10220 PBTGF30 jae mx Japan Aviation Electronics Industry TS
Contextual Info: JK ft E E 9 L 0 L TS 'ON DATE REV. 2 0NIMVÜQ ##ME 11 . J U1. 2005 DON w. w. ft S NO. 057778 DESCRIPTION SHAPE a ys C HK . DR. CHANGE S.I IDA U APPD. H.HASH IMOTO¿ 'j Q £= L & s n AP P D . <y E (MATERIAL MARK) MATED A (MATERIAL MARK) 0 0 ND I T I 0 N ( R E F . )

A128C256

Abstract: 80c31 application 8031P H0902 eeprom PROGRAMMING tutorial h0908 WSI Cross Reference 29F010 EPM7064S EPM7064SLC84-5
Contextual Info: 3/22/98 – REV 1.0 Design Tutorial, PSD813F1 – 80C31 Application Note 057 Preliminary By Dan Harris and Mark Rootz Contents 1 Introduction . 2

KDZ2.4EV

Abstract: KDZ10EV KDZ11EV KDZ12EV KDZ13EV KDZ15EV KDZ16EV KDZ18EV KDZ20EV KDZ22EV
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KDZ2.0EV~24EV ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. ᴌNominal Voltage Tolerance About ᴦ6%. 1 A ᴌSmall Package : ESC E C B CATHODE MARK FEATURES 2

Contextual Info: AS3911 AS3911 EMVco reference design Application note Rev 0V6 April 2012 Application engineer: Thomas Luecker Marketing contact: Mark Dickson Proprietary and Confidential 1 1 Introduction. 3

24v zener diode

Abstract: KDZ10V KDZ11V KDZ12V KDZ13V KDZ15V KDZ16V KDZ18V KDZ20V KDZ22V
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KDZ2.0V~24V ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. CATHODE MARK L K H F ᴌNominal Voltage Tolerance About ᴦ6%. A ᴌSmall Package : USC 1 E FEATURES

40 hmr 120

Abstract: 70 hmr 160 FFB3904 FMB3904 MMPQ3904 SC70-6 SOIC-16 DCP10 B5075
Contextual Info: «=>F n n tx ¿ c i ' 1' n n FFB3904 FMB3904 MMPQ3904 E2 B2 C1 C1 C2 B1 pin#1 E1 pin#1 B1 SC70-6 SuperSOT -6 Mark: .1A Mark: .1A SOIC-16 NPN General Purpose Amplifier This device is designed as a general purpose am plifier and switch. The useful dynam ic range extends to 100 m A as a switch and to

KDS160

Contextual Info: SEMICONDUCTOR KDS160 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. L K H F ᴌFast Reverse Recovery Time. A ᴌLow Forward Voltage. 1 E ᴌSmall Package : USC. G B CATHODE MARK FEATURES ᴌSmall Total capacitance. 2

Contextual Info: 631-2012:QuarkCatalogTempNew 8/23/12 5:45 PM Page 631 4 Labeling ᭤ Easy-Mark Labeling Software Simplifies Label Creation for the Specific Needs of Your Applications ᭤ Intuitive Interview Process Allows Automatic Generation of Compliant Labels and Signs

KDS160

Contextual Info: SEMICONDUCTOR KDS160 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. L K H F ᴌFast Reverse Recovery Time. A ᴌLow Forward Voltage. 1 E ᴌSmall Package : USC. G B CATHODE MARK FEATURES ᴌSmall Total capacitance. 2

C10V

Abstract: KDV239E
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KDV239E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO FOR UHF RADIO. FEATURES 1 A ᴌSmall Package. ESC Package E C B CATHODE MARK ᴌUltra Low Series Resistance : rS=0.44ή(Typ.) 2 MAXIMUM RATING (Ta=25ᴱ)

Contextual Info: SEMICONDUCTOR KDV350E TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO. FEATURES 1 A ᴌSmall Package. ESC Package E C B CATHODE MARK ᴌLow Series Resistance : rS=0.50ή(Max.) 2 MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC D F SYMBOL

KDV350E

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KDV350E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO. FEATURES 1 A ᴌSmall Package. ESC Package E C B CATHODE MARK ᴌLow Series Resistance : rS=0.50ή(Max.) 2 MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC D F SYMBOL

UZG121

Abstract: UZG120 UZG1205 UZG130 UZG140 UZH130 UZH200 UZH301 UZH302 UZH462
Contextual Info: UZG series 0.6.7 15:56 Page 1 AMPLIFIER-SEPARATED PHOTOELECTRIC SENSORS UZG/H Series SMALL PACKAGE POWER & FLEXIBILITY Just Press the Buttons Anyone can achieve the optimum sensitivity setting with the press of a button. ᕃ Press “ON” button on the mark.

C10V

Abstract: KDV154
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KDV154 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV VHF,UHF TUNER AFC VCO FOR UHF BAND RADIO. CATHODE MARK SYMBOL RATING UNIT Reverse Voltage VR 20 V Junction Temperature Tj 150 ᴱ Tstg -55ᴕ150 ᴱ Storage Temperature Range

KDS160E

Contextual Info: SEMICONDUCTOR KDS160E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES ᴌFast Reverse Recovery Time. ᴌSmall Total capacitance. E 1 A ᴌLow Forward Voltage. C B CATHODE MARK ᴌSmall Package : ESC. 2 D F MAXIMUM RATING Ta=25ᴱ

vr 1K

Abstract: KDR412
Contextual Info: SEMICONDUCTOR KDR412 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE LOW POWER RECTIFICATION FOR SWITCHING POWER SUPPLY. CATHODE MARK L K H F ᴌLow Forward Voltage : VF max=0.5V A ᴌSmall Surface Mounting Type. USC 1 E FEATURES G B ᴌHigh Reliability 2 J D

kds114

Contextual Info: SEMICONDUCTOR KDS114 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE VHF TUNER BAND SWITCH APPLICATIONS. L K A ᴌSmall Total Capacitance : CT=1.2pF Max. . H F ᴌLow Series Resistance : rS=0.5ή(Typ.). 1 E ᴌSmall Package. G B CATHODE MARK FEATURES 2 J D

NEh jJ8

Abstract: k30270 LB 11911 095275-VK20BA ue09 KM 7-C 1 UF -20 100V 74S83 S0807 74LS32N z3ans
Contextual Info: R E V IS IO N S DESCRIPT'ON » * * LTR MARK AM*« P iK PXÛC1S1 Z v cmpcz procgsz z. 2 PL J L MARK PEU PE0C£5S J p 6 H A A # i WAS 9?Z7£9-toZW E 6 m * T £ D * £ / i £ r £ t d i0 £ # i/ tty * * ¡è k w - ¿ A J 4 0 1 6 9 / & J / O / i. — to * D D £ D

motorola 68hc11 schematic programmer

Abstract: PLC Communication cables pin diagram 68ch11 68HC11 download spi flash programmer schematic 68HC11 WSI Cross Reference 68hC motorola 68hc11 applications note PSDSoft
Contextual Info: PSD913F2 / 68HC11 Design Guide Application Note 068 By Mark Rootz April, 2000 Rev 1.2 Waferscale Integration Inc. 47280 Kato Road, Fremont, CA 94538 Contents 1 2 3 4 5 6 7 Introduction . 1

hc705j1a

Abstract: MC68HC05 Applications Guide operational amplifier discrete schematic DAC8043 AN1730 japan 8043 HC05 MC68HC705J1A H705 layout diagram of microcontroller
Contextual Info: Freescale Semiconductor, Inc. Order this document by AN1730/D Motorola Semiconductor Application Note AN1730 Freescale Semiconductor, Inc. Digital Amplification Control of an Analog Signal Using the MC68HC705J1A By Mark Glenewinkel Consumer Systems Group

KDV350

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KDV350 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO. L K A H F ᴌSmall Package. 1 E ᴌLow Series Resistance : rS=0.50ή Max. G B CATHODE MARK FEATURES 2 J D C I MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL