MARK T11 AD Search Results

TLOM1108

Abstract: TLYM1108 750HS ST-100S TLOM1108T11
Contextual Info: TL RM,RMM,SM,OM,YM 1108(T11) TOSHIBA LED Lamps TLRM1108(T11), TLRMM1108(T11), TLSM1108(T11), TLOM1108(T11), TLYM1108(T11) Panel Circuit Indicator Unit: mm Cathode mark • Surface-mount device • 3.2 (L) mm x 2.9 (W) mm × 1.9 (H) mm • InGaAℓP LEDs •

hvm17wa

Abstract: Hitachi DSA001652
Contextual Info: HVM17WA Variable Capacitance Diode for VCO ADE-208-246 Z Rev. 0 May. 1994 Features • • • • Good linearity of C-V curve. To be usable at low voltage. High figure of merit. (Q = 50min) MPAK package is suitable for high density surface mounting and high speed assembly.

HVM17

Abstract: HVM17WA SC-59A Hitachi DSA00497
Contextual Info: ADE-208-087B Z HVM17 Variable Capacitance Diode for FM tuner Preliminary Rev. 2 May. 1993 Features • • • • Pin Arrangement Good linearity of C-V curve. To be usable at low voltage. High figure of merit. (Q=50 min) MPAK package is suitable for high density

Contextual Info: HVM17WA Variable Capacitance Diode for VCO HITACHI ADE-208-246 Z Rev. 0 May. 1994 Features • Good linearity of C-V curve. • To be usable at low voltage. • High figure of merit. (Q = 50min) • MPAK package is suitable for high density surface mounting and high speed assembly.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C32202L 32M-BIT SYNCHRONOUS MASK-PROGRAMMABLE ROM 2M-WORD BY 16-BIT WORD MODE / 1M-WORD BY 32-BIT (DOUBLE WORD MODE) Description The µPD23C32202L is a 33,554,432 bits synchronous mask-programmable ROM with multiplexed address bus.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C64202L 64M-BIT SYNCHRONOUS MASK-PROGRAMMABLE ROM 4M-WORD BY 16-BIT WORD MODE / 2M-WORD BY 32-BIT (DOUBLE WORD MODE) Description The µPD23C64202L is a 67,108,864 bits synchronous mask-programmable ROM with multiplexed address bus.

tas t23

Abstract: QA1 power amplifier
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C64202L 64M-BIT SYNCHRONOUS MASK-PROGRAMMABLE ROM 4M-WORD BY 16-BIT WORD MODE / 2M-WORD BY 32-BIT (DOUBLE WORD MODE) Description The µPD23C64202L is a 67,108,864 bits synchronous mask-programmable ROM with multiplexed address bus.

Contextual Info: VIS VG3617161BT 16Mb CMOS Synchronous Dynamic RAM Description The VG3617161BT is CMOS Synchronous Dynamic RAMs organized as 524,288-word X 16-bit X 2bank. It is fabricated with an advanced submicron CMOS technology and is designed to operate from a single 3.3V power supply. This is packaged using JEDEC standard pinouts and standard plastic TSOP.

Contextual Info: TLN1108 T11 TOSHIBA Infrared LED GaAℓAs Infrared Emitter TLN1108(T11) Unit: mm ○ Infrared LED for Space-Optical-Transmission ○ Light Source for Infrared Cameras ○ Opto-Electronic Switches • Surface-mount devices • Package size • High radiant power : PO = 70mW (typ.) @100mA

rba 016

Abstract: dba1 VG3617161BT
Contextual Info: VIS VG3617161BT 16Mb CMOS Synchronous Dynamic RAM Description The VG3617161BT is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V

tas t23

Contextual Info: VIS VG3617161BT 16Mb CMOS Synchronous Dynamic RAM Description The VG3617161BT is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V

MOSFET A13

Abstract: lbaa MIC2514BM5 78204 High-Side MOSFET Driver TO263 mark code A11 sot markings MOSFET driver SOT LAXX MIC7211BM5
Contextual Info: Part Identification Packaged Devices MIC XXXX -01 A E B Q Micrel or Standard Prefix Part Number Speed /Bonding Option only used when required Qualification Option H4 = Rad Hard, 1x104 rad Si Q = Class B or S Screening Option (None) = Industrial B = Class B S = Class S

LGAA

Abstract: mark A15 sot-23-6 MIC5219BM5 LGAA A12A LDXX WM Mark code negative VOLTAGE REGULATOR sot 23-6 A16 SOT
Contextual Info: You are in Databook Vol. 1 • Click for Main Menu Part Identification Packaged Devices MIC XXXX -01 A E B Q Micrel or Standard Prefix Qualification Option H4 = Rad Hard, 1x104 rad Si Q = Class B or S Part Number Speed/Bonding Option only use when required

eltek flatpack

Abstract: mosfet 407 sot-23-5 op amp or regulator mark A15 sot-23-6 LBAA sot-23 M6 negative VOLTAGE REGULATOR sot 23-6 SOT23 m6 sot-23-5 a13
Contextual Info: You are in Databook Vol. 3 • Click for Main Menu Part Identification Packaged Devices MIC XXXX -01 A E B Q Micrel or Standard Prefix Qualification Option H4 = Rad Hard, 1x104 rad Si Q = Class B or S Part Number Speed/Bonding Option only use when required

dba1

Contextual Info: VIS Preliminary VG3617161DT 16Mb CMOS Synchronous Dynamic RAM Description The VG3617161DT is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V

Contextual Info: VG3617161DT 1,048,576 x 16 - Bit CMOS Synchronous Dynamic RAM VIS Description The VG3617161DT is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V

Contextual Info: VG3617161DT 1,048,576 x 16 - Bit CMOS Synchronous Dynamic RAM VIS Description The VG3617161DT is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V

rkm 34 transistor

Abstract: RKM 24 sm transistor rkm 21 transistor diode t95 mark J5 SOT-89 CRB20 T95 Diode sot36 rkm 45 transistor TS11
Contextual Info: Packing Monolithic ICs P ackage SOP QFP 2 Taping package SOP8 - 28 pin) P ackaging type Tube A rranged in pla stic tu b e s (antistatic treated) Taping (8 - 28 pins only) SOP ICs adh e re d to a tape and w ound on a reel Pallet H oused in individual cells on stacked

Contextual Info: VIS Preliminary VG3617161BT 16Mb CMOS Synchronous Dynamic RAM Description The VG3617161BT is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V

dba1

Abstract: VG3617161DT
Contextual Info: VG3617161DT 1,048,576 x 16 - Bit CMOS Synchronous Dynamic RAM VIS Description The VG3617161DT is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V

Contextual Info: VIS VG3617161BT 16Mb CMOS Synchronous Dynamic RAM Description The VG3617161BT is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V

Vixel Corporation

Contextual Info: Vixel 5100 V-GLM For Reliable High-Speed Performance in All Fibre Channel Configurations Whether your applications demand high I/O operations per second or pure throughput, the new Vixel 5100 Gigabaud Link Module GLM assures superior optical performance and greater

MARKING CODE QA1

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C32202L 32M-BIT SYNCHRONOUS MASK-PROGRAMMABLE ROM 2M-WORD BY 16-BIT WORD MODE / 1M-WORD BY 32-BIT (DOUBLE WORD MODE) Description The µPD23C32202L is a 33,554,432 bits synchronous mask-programmable ROM with multiplexed address bus.

vs237

Abstract: Winbond Electronics vs180 VS236 vs133 VS232 WFP6530B 60-1600 VS148 D15D
Contextual Info: WFP6530B Advanced Product Information 1. PRODUCT DESCRIPTION COG Signal Driver The WFP6530B is a 6-bit, 240-channel signal driver designed for SVGA chip-on-glass COG TFT-LCDs. The WFP6530B’s minimum form factor and optimized COG layout permit the design of