MARK S11 Search Results

Contextual Info: 27.90 0.50 PGA73-C-S11U-2.54 1 4.46 0.40 INDEX MARK 2.54 5 0.46 0.05 3.40 0.40 1.20 0.30 SEATING PLANE 0.25 M

Contextual Info: Mar. / 2007 Ver2.0 TDK Corporation MULTILAYER LOW PASS FILTER P/N: DEA102500LT-6307A1 [MECHANICAL DIMENSIONS] L T 4 (3) (1) a2 W c1 Pin function (1) IN (2) GND (3) OUT (4) GND (2) Mark L W T a1 c2 b a1 Dimension 1.0±0.05 0.5±0.05 0.4 max 0.3±0.1 Mark

s118 diode

Abstract: S118 1SS118 diode s118 band switching diode 1S118 Hitachi DSA0040
Contextual Info: 1SS118 Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-297 Z Rev. 0 Features • High average forward current. (I O = 200mA) • High reliability with glass seal. Ordering Information Type No. Cathode band Mark Package Code 1SS118 Black S118

S11MS3

Abstract: E64380 S21MS3 S21MS4
Contextual Info: S11MS3/S21MS3/S21MS4 S11MS3/ S21MS3/S21MS4 High Density Surface Mount Type Mini-flat Package Phototriac Coupler • Features ■ Outline Dimensions 1.27± 0.25 6 5 4 S Anode mark S11MS3 S21MS3 Input Output 0.5+- 0.4 0.2 5 No external connection 6 Anode/ cathode

S11MS7

Abstract: E64380
Contextual Info: S11MS7 S11MS7 High Speed/ High Noiseresistance Type Phototriac Coupler • Features ■ Outline Dimensions S11MS 7 1 3 0.4± 0.1 Anode mark 1. For triggering medium/high power triac 6 5 4 4.4± 0.2 6 5 4 ■ Applications Internal connection diagram 0.6MAX.

S11MS7

Abstract: E64380
Contextual Info: S11MS7 S11MS7 High Speed/ High Noiseresistance Type Phototriac Coupler • Features ■ Outline Dimensions S11MS 7 1 3 0.4± 0.1 Anode mark 1. For triggering medium/high power triac 6 5 4 4.4± 0.2 6 5 4 ■ Applications Internal connection diagram 0.6MAX.

S11MS3

Contextual Info: S11MS3/S21MS3/S21MS4 S11MS3/ S21MS3/S21MS4 High Density Surface Mount Type Mini-flat Package Phototriac Coupler • Features ■ Outline Dimensions 1.27± 0.25 6 5 4 S Anode mark S11MS3 S21MS3 Input Output 0.5+- 0.4 0.2 5 No external connection 6 Anode/ cathode

ltcc antenna

Abstract: ltcc antenna 2.4 GHz ltcc WPSM WPSML LTCC X band
Contextual Info: WPSMLANT002B LTCC Antenna PRELIMINARY SPECIFICATION Explanation of Part Number WPSMLANT 1 002 (2) B (3) Soldering terminal Identification mark (1) Product Series WPSMLANT – LTCC Antenna (2) Product Identifier 5.2 x 2.0mm Multilayer Ceramic Antenna (3)

diode gp 434

Abstract: RD07MVS2 diode zener 7.2v RD07MVS1 T112 318 MARKING DIODE
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD07MVS2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION OUTLINE DRAWING 0.22 2.0+/-0.05 1.0+/-0.05 2 3.5+/-0.05 1 3 (0.25) INDEX MARK (Gate)

transistor rf m 1104

Contextual Info: < Silicon RF Power MOS FET Discrete > RD02MUS1 RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W DRAWING DESCRIPTION 0.2+/-0.05 specifically designed for VHF/UHF RF power 1 1.0+/-0.05 4.9+/-0.15 amplifiers applications. FEATURES 2 INDEX MARK

Contextual Info: < Silicon RF Power MOS FET Discrete > RD05MMP1 RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W (a) OUTLINE DRAWING (b) (b) 7.0+/-0.2 0.2+/-0.05 RD05MMP1 is a MOS FET type transistor 0.65+/-0.2 DESCRIPTION 8.0+/-0.2 FEATURES (4.5) INDEX MARK

WPSM

Abstract: WPSML
Contextual Info: Multilayer Ceramic Band Pass Filter Bluetooth & WLAN IEEE 802.11b/g 2.45GHz ISM Band 2520 Construction Explanation of Part Number WPSMLBPF (1) (1) (2) (3) (4) 002 (2) H (3) WPSMLBPF002H Identification mark † (4) Ground Product Series WPSMLBPF: Band Pass Filter

MGF0914A

Abstract: fet 4901 0648
Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0914A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION OUTLINE DRAWING Unit:mm The MGF0914A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. Gate Mark Round corner FEATURES

s118 diode

Abstract: s118 jedec do 35 1SS118 Hitachi DSA001653
Contextual Info: 1SS118 Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-297 Z Rev. 0 Dec. 1994 Features • High average forward current. (IO = 200mA) • High reliability with glass seal. Ordering Information Type No. Cathode band Mark Package Code 1SS118

s118 diode

Abstract: diode s118
Contextual Info: 1SS118 Silicon Epitaxial Planar Diode for High Speed Switching HITACHI ADE-208-297 Z Rev. 0 Dec. 1994 Features • High average forward current. (I0 = 200mA) • High reliability with glass seal. Ordering Information Type No. Cathode band Mark Package Code

MARK "326" FET

Abstract: transistor 3669
Contextual Info: < Silicon RF Power MOS FET Discrete > RD05MMP1 RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W (a) OUTLINE DRAWING 7.0+/-0.2 0.2+/-0.05 RD05MMP1 is a MOS FET type transistor (b) (b) 0.65+/-0.2 DESCRIPTION 8.0+/-0.2 FEATURES (4.5) INDEX MARK

wpi terminal

Abstract: WPSMLANT015A WPSM WPSML LTCC GHz
Contextual Info: Multilayer Ceramic Antenna 900MHz ISM Band Working Frequency Explanation of Part Number WPSMLANT 1 (1) (2) (3) (4) 015 (2) A (3) WPSMLANT015A Construction Soldering terminal † (4) Identification mark Product Series WPSMLANT: Multilayer Ceramic Antenna Product No. Indentifier 015

2SK2975

Abstract: MITSUBISHI RF POWER MOS FET GR40-310 139706 t12max GR40-10 0927 TRANSISTOR 40799 17053
Contextual Info: MITSUBISHI RF POWER MOS FET 2SK2975 DESCRIPTION 2SK2975 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications. OUTLINE DRAWING INDEX MARK Dimensions in mm TOP (BOTTOM) FEATURES • High power gain:Gpe≥8.4dB @VDD=9.6V,f=450MHz,Pin=30dBm

diode gp 434

Abstract: RD07MVS1 RD07MVS2 T112 07MVS1 PO520 zener gp 434
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS2 RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 2.0+/-0.05 2 INDEX MARK Gate For output stage of high power amplifiers In VHF/UHF band mobile radio sets.

2SK2974

Abstract: 093.216 transistor 2sk2974 GR400 093.941 9357 MITSUBISHI RF POWER MOS FET 015789 FET MARKING CR10-510
Contextual Info: MITSUBISHI RF POWER MOS FET 2SK2974 DESCRIPTION 2SK2974 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications. OUTLINE DRAWING INDEX MARK Dimensions in mm TOP (BOTTOM) FEATURES • High power gain:Gpe≥8.4dB @VDD=7.2V,f=450MHz,Pin=30dBm

WPSM

Abstract: WPSML LTCC GHz
Contextual Info: Miniature Band Pass Filter 2520 Bluetooth & WLAN IEEE 802.11b 2.45GHz ISM Band Working Frequency Explanation of Part Number WPSMLBPF (1) (1) (2) (3) (4) 002 (2) G (3) WPSMLBPF002G Construction Identification mark (4) Input/ Output Ground Product Series WPSMLBPF: Miniature Band Pass Filter

TRANSISTOR D 1765

Abstract: transistor mosfet 4425 1776 48T08 TRANSISTOR D 1765 720 T72 MARKING 1788
Contextual Info: < Silicon RF Power MOS FET Discrete > RD09MUP2 RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W DESCRIPTION (a) (b) 7.0+/-0.2 0.2+/-0.05 FEATURES (4.5) INDEX MARK [Gate] 2.6+/-0.2 0.95+/-0.2 •High power gain: Pout>8W, Gp>10dB@Vdd=7.2V,f=520MHz

MGF0913A

Abstract: 1709-1
Contextual Info: MITSUBISHI SEM ICON DUCTOR<GaAs FET> Preliminary MGF0913A L & S BAND GaAs FET [ SMD OUTLINE DRAWING DESCRIPTION non - matched ] urnt: Gate Mark Round corner The MGF0913A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES

Contextual Info: RMO3E-3 A Highly Integrated Dual-band SiGe Power Amplifier that Enables 256 QAM 802.11ac WLAN Radio Front-End Designs Chun-Wen Paul Huang, Philip Antognetti, Lui Lam, Tony Quaglietta, Mark Doherty, and William Vaillancourt Skyworks Solutions, Inc., Andover, MA 01810, USA