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    MARK N10 Search Results

    MARK N10 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG80C186-10/BZA
    Rochester Electronics LLC 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101ZA) PDF Buy
    ICM7555MTV/883
    Rochester Electronics LLC ICM7555MTV/883 - Dual marked (5962-8950303GA) PDF Buy
    MQ80C186-10/BYA
    Rochester Electronics LLC 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101YA) PDF Buy
    54121/BCA
    Rochester Electronics LLC 54121 - Multivibrator, Monostable - Dual marked (M38510/01201BCA) PDF Buy
    54F191/QEA
    Rochester Electronics LLC 54F191/QEA - Dual marked (5962-9058201EA) PDF Buy

    MARK N10 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    CS4281

    Abstract: ctl14 SLV8 AC97 CS4280 CS4294 CS4297 SLV6 acsda
    Contextual Info: &U\VWDO 6HPLFRQGXFWRU 3&,$XGLR'HVLJQ*XLGHIRU PEHGGHG6\VWHPV Specification of Hardware Interfaces Required for PCI Audio in Embedded Applications Mark Gentry &U\VWDO 6HPLFRQGXFWRU Table of Contents 1 2 3 Revision History . 3


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    CS4280. CS4281 ctl14 SLV8 AC97 CS4280 CS4294 CS4297 SLV6 acsda PDF

    IRF530N

    Abstract: MOSFET IRF530n
    Contextual Info: IRF530N Data Sheet July 2001 22A, 100V, 0.064 Ohm, N-Channel, Power MOSFET FO pdfPackaging mark Features JEDEC TO-220AB [ /PageMode /UseOutlines /DOCVIEW pdfmark SOURCE DRAIN GATE DRAIN FLANGE IRF530N • Ultra Low On-Resistance - rDS(ON) = 0.064Ω, VGS = 10V


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    IRF530N O-220AB IRF530N MOSFET IRF530n PDF

    IO01

    Abstract: mark AT0 IO30PDB1V1 IO06PDB0V1 IO10PDB0V1
    Contextual Info: Actel Fusion Mixed-Signal FPGAs 4 – Package Pin Assignments 108-Pin QFN A44 A56 B41 B52 Pin A1 Mark A1 A43 B40 B1 B13 A14 B27 A29 B26 B14 A28 A15 Note: The die attach paddle center of the package is tied to ground GND . Note For Package Manufacturing and Environmental information, visit the Resource Center at


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    108-Pin AFS090 GCB1/IO35PDB1V0 GAA2/IO52PDevice IO01 mark AT0 IO30PDB1V1 IO06PDB0V1 IO10PDB0V1 PDF

    Diode Mark N10

    Abstract: BZV49 diode GF M
    Contextual Info: SOT89 NPN SWITCHING TRANSISTORS Pinout : 1-Base, 2&4-Collector, 3-Emitter V CE sa O Max h -E Type v CBO v CEO ^C(cont P lo t V V mA W FCX2369A 40 15 500 1.0 40/120 FCX2369 40 15 500 1.0 40/120 M in/M ax at lc / V ce m A / Volts Part Mark Code Volts at l c / Iß


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    FCX2369A FCX2369 BZV49 BAW79D BAW79C BAW79B BAW79A 200mA, BAW78D BAW78C Diode Mark N10 diode GF M PDF

    512MB NOR FLASH

    Abstract: BTA160 BGA 130 MCP NAND DDR S72WS512NFFKFWZ2 Flash MCp nand DRAM 137-ball ball 128 mcp NAND FLASH BGA S29WS256N S72WS256ND0 S72WS256NDE
    Contextual Info: S72WS-N Based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus 256/512 Mb Simultaneous Read/Write, Burst Mode Flash Memory 512 Mb NAND Flash 1024 Mb NAND Interface ORNAND Flash Memory on Bus 1 512/256/128 Mb 8M/4M/2M x 16-bit x 4 Banks Mobile SDRAM on Bus 2


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    S72WS-N 16-bit 512MB NOR FLASH BTA160 BGA 130 MCP NAND DDR S72WS512NFFKFWZ2 Flash MCp nand DRAM 137-ball ball 128 mcp NAND FLASH BGA S29WS256N S72WS256ND0 S72WS256NDE PDF

    512MB NOR FLASH

    Abstract: BFW transistors Diode Mark N10 MCP NOR FLASH SDRAM 137-Ball 66 ball nor flash JESD 95-1, SPP-010 NAND FLASH BGA S72WS256NDE S72WS256NEE
    Contextual Info: S72WS-N Based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus 256/512 Mb Simultaneous Read/Write, Burst Mode Flash Memory 512 Mb NAND Flash 1024 Mb NAND Interface ORNAND Flash Memory on Bus 1 512/256/128 Mb 8M/4M/2M x 16-bit x 4 Banks Mobile SDRAM on


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    S72WS-N 16-bit 200rranty 512MB NOR FLASH BFW transistors Diode Mark N10 MCP NOR FLASH SDRAM 137-Ball 66 ball nor flash JESD 95-1, SPP-010 NAND FLASH BGA S72WS256NDE S72WS256NEE PDF

    BGA 130 MCP NAND DDR

    Abstract: JEP95 137-Ball DSA00272754 Flash MCp nand DRAM 137-ball S72WS512PEF N-ADQ12 130 MCP NAND DDR NAND FLASH BGA Flash MCp nand DRAM 107-ball
    Contextual Info: S72WS-P based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus Simultaneous Read/Write, Burst Mode NOR Flash NAND Flash or NAND Interface ORNAND Flash on Bus 1 Mobile SDRAM on Bus 2 S72WS-P based MCP/PoP Products Cover Sheet Data Sheet Advance Information


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    S72WS-P BGA 130 MCP NAND DDR JEP95 137-Ball DSA00272754 Flash MCp nand DRAM 137-ball S72WS512PEF N-ADQ12 130 MCP NAND DDR NAND FLASH BGA Flash MCp nand DRAM 107-ball PDF

    Contextual Info: SILI CO N S Y S T E M S 4bE D INC • 00G547Ü 7 « S I L SSI 73K224L ¿ m m s if s k m V.22bis/V.22/V.21, Bell 212A/103 Single-Chip Modem s ' A TDK Group/Company T - 7 5 -3 3 - 0 5 November 1991 FEATURES DESCRIPTION The SSI 73K224L is a highly integrated single-chip


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    00G547Ü 73K224L 22bis/V 12A/103 73K224L 22bis 28-pin 22bis, PDF

    FND pinout diagram

    Abstract: ws256n spansion FND115 S29WS-N S30MS-P S75WS256NDF S75WS256NEG S75WS-N A0-A22 NK 5-4
    Contextual Info: S75WS-N Based MCPs Stacked Multi-Chip Product MCP 256 Megabit (16M x 16-bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128 Mb (8M x 16-Bit) RAM Type 4 and 512 Mb (32M x 16-bit) Data Flash or 1 Gb ORNAND Flash Data Sheet PRELIMINARY


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    S75WS-N 16-bit) FND pinout diagram ws256n spansion FND115 S29WS-N S30MS-P S75WS256NDF S75WS256NEG A0-A22 NK 5-4 PDF

    military part marking symbols triangle

    Abstract: marking m2i Q020G qml38535 L3T SMD MARKING qml-38535 1/transistor st 9514
    Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED REV SHEET REV SHEET 15 16 17 REV STATUS OF SHEETS 18 19 20 STANDARD M ICROCIRCUIT DRAW ING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE 22 23 24 25 26 1 2


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    5962-E277-96 0020D2b TDGM70Ã military part marking symbols triangle marking m2i Q020G qml38535 L3T SMD MARKING qml-38535 1/transistor st 9514 PDF

    ADQ12

    Abstract: ADQ14 Multi-Chip Package MEMORY F12 MARK MICRON mcp NS512 S29NS-N S72NS-N 7d8l S72NS512ND0
    Contextual Info: S72NS-N Based MCPs Stacked Multi-Chip Product MCP MirrorBitTM Flash Memory & DRAM 128 Mb (8 M x 16 bit)/256 Mb (16 M x 16 bit), 110nm CMOS 1.8 Volt-only, Multiplexed, Simultaneous Read/Write, Burst Mode Flash Memory and 128/256-Mb (8/16-M x 16-bit) DDR DRAM


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    S72NS-N 110nm 128/256-Mb 8/16-M 16-bit) S72NS128 256ND0 ADQ12 ADQ14 Multi-Chip Package MEMORY F12 MARK MICRON mcp NS512 S29NS-N 7d8l S72NS512ND0 PDF

    2006 international 9400 wiring diagram

    Contextual Info: R1515x Series AEC-Q100 Grade 2 Certified 50 mA Voltage Regulator Wide Input Voltage Range for Automotive Applications NO. EC-153-140107 OUTLINE The R1515x series are CMOS-based positive voltage regulator (VR) ICs featuring 50mA output current. The R1515xxxxB has features of high input voltage and ultra-low supply current. A peak current limit circuit, a short


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    R1515x AEC-Q100 EC-153-140107 R1515xxxxB Room403, Room109, 2006 international 9400 wiring diagram PDF

    73k324

    Contextual Info: SSI 73K224L ów m su skm s' V.22bis/V.22/V.21, Bell 212A/103 Single-Chip Modem A TDK Group/Company January 1994 DESCRIPTION FEATURES The SSI 73K 224L is a highly integrated single-chip m odem 1C w hich provides the functions needed to construct a V.22bis com patible m odem , capable of


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    73K224L 22bis 28-pin 22bis, 80C51 73k324 PDF

    5962-8982303MTX

    Abstract: 3090-70 5962-8982303MXX QML-38535 n10 smd 6-pin 5962-8982302QXA TOKO marking P4 smd diode l15 smd marking code G16 5962-8982301MXX
    Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA B Redrawn with changes. Converted drawing to one part-one part number SMD format. Corrected art work for Y and Z packages. 92-11-16 M.A. Frye C Redrawn with changes. Added devices 03 and 04. Changes to paragraph 4.2.1. Changes to table I and table IIA. Changed the max lead thickness on


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    5962-R198-95. 5962-R005-97. throughoutN164MQ 5962-8982303MTX 3090-70 5962-8982303MXX QML-38535 n10 smd 6-pin 5962-8982302QXA TOKO marking P4 smd diode l15 smd marking code G16 5962-8982301MXX PDF

    Contextual Info: Power LED I TECHNICAL DATA W10190 N10190 B10190 G10190 R10190 C10190 A10190 SEOUL SEMICONDUCTOR CO., LTD. 148-29, Kasan-Dong, Keumchun-Gu, Seoul, Korea TEL : 82-2-3281-6269 FAX : 82-2-857-5430 Rev08 – 2005/04 1 SPECIFICATIONS - Features • Super high flux output and high luminance


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    W10190 N10190 B10190 G10190 R10190 C10190 A10190 Rev08 PDF

    Contextual Info: Power LED I TECHNICAL DATA W10290 N10290 B10290 G10290 R10290 C10290 A10290 SEOUL SEMICONDUCTOR CO., LTD. 148-29, Kasan-Dong, Keumchun-Gu, Seoul, Korea TEL : 82-2-3281-6269 FAX : 82-2-857-5430 Rev05 – 2005/04 1 SPECIFICATIONS - Features • Super high flux output and high luminance


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    W10290 N10290 B10290 G10290 R10290 C10290 A10290 Rev05 PDF

    SH7618

    Abstract: Diode Mark N10 SH7600
    Contextual Info: SuperH Family E10A Emulator Additional Document for User’s Manual SH7618 E10A HS7618KCM02HE Renesas Microcomputer Development Environment System SuperH Family / SH7600 Series Specific Guide for the SH7618 E10A Emulator Rev.1.00 2003.12.16 Cautions


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    SH7618 HS7618KCM02HE SH7600 REJ10B0077-0100H Diode Mark N10 PDF

    Contextual Info: H3E I SEUITRON INDUSTRIES LTD TJ • 813768=1 0000105 4 « S L C B 'T - W - T 'b TM SERIES- PI-RANGE Transient Voltage Suppressor ■Glass Passivated Junction Voltage Range 68V - 350 Volts ■100A Peak Pulse Current APPLICATIONS ■ Transient voltage suppression for induced lightning, NEMP,


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    DO-35 DO-41 DO-15 DO-201AD PDF

    Contextual Info: Power LED I TECHNICAL DATA W10290 N10290 B10290 G10290 R10290 C10290 A10290 SEOUL SEMICONDUCTOR CO., LTD. 148-29, Kasan-Dong, Keumchun-Gu, Seoul, Korea TEL : 82-2-3281-6269 FAX : 82-2-857-5430 Rev07 – 2006/05 1 SPECIFICATIONS - Features • Super high flux output and high luminance


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    W10290 N10290 B10290 G10290 R10290 C10290 A10290 Rev07 PDF

    Contextual Info: Power LED I TECHNICAL DATA W10191, W10192 N10191, N10192 B10191, B10192 G10191, G10192 R10191, R10192 C10191, C10192 A10191, A10192 SEOUL SEMICONDUCTOR CO., LTD. 148-29, Kasan-Dong, Keumchun-Gu, Seoul, Korea TEL : 82-2-3281-6269 FAX : 82-2-857-5430 Rev08 – 2005/04


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    W10191, W10192 N10191, N10192 B10191, B10192 G10191, G10192 R10191, R10192 PDF

    Contextual Info: Power LED I TECHNICAL DATA W10290 N10290 B10290 G10290 R10290 C10290 A10290 SEOUL SEMICONDUCTOR CO., LTD. 148-29, Kasan-Dong, Keumchun-Gu, Seoul, Korea TEL : 82-2-3281-6269 FAX : 82-2-857-5430 Rev06 – 2005/09 1 SPECIFICATIONS - Features • Super high flux output and high luminance


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    W10290 N10290 B10290 G10290 R10290 C10290 A10290 Rev06 PDF

    Contextual Info: Power LED TECHNICAL DATA W10490 N10490 B10490 G10490 R10490 C10490 A10490 SEOUL SEMICONDUCTOR CO., LTD. 148-29, Kasan-Dong, Keumchun-Gu, Seoul, Korea TEL : 82-2-3281-6269 FAX : 82-2-857-5430 Rev06 – 2006/05 1 SPECIFICATIONS - Features • Super high flux output and high luminance


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    W10490 N10490 B10490 G10490 R10490 C10490 A10490 Rev06 PDF

    Contextual Info: Power LED I TECHNICAL DATA W10291, W10292 N10291, N10292 B10291, B10292 G10291, G10292 R10291, R10292 C10291, C10292 A10291, A10292 SEOUL SEMICONDUCTOR CO., LTD. 148-29, Kasan-Dong, Keumchun-Gu, Seoul, Korea TEL : 82-2-3281-6269 FAX : 82-2-857-5430 Rev05 – 2005/04


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    W10291, W10292 N10291, N10292 B10291, B10292 G10291, G10292 R10291, R10292 PDF

    Contextual Info: Power LED TECHNICAL DATA W10491, W10492 N10491, N10492 B10491, B10492 G10491, G10492 R10491, R10492 A10491, A10492 C10491, C10492 SEOUL SEMICONDUCTOR CO., LTD. 148-29, Kasan-Dong, Keumchun-Gu, Seoul, Korea TEL : 82-2-3281-6269 FAX : 82-2-857-5430 Rev05 – 2005/04


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    W10491, W10492 N10491, N10492 B10491, B10492 G10491, G10492 R10491, R10492 PDF