MARK 1J Search Results

S1800

Abstract: S1803 S1850 FR-0320
Contextual Info: Pericom Semiconductor Corp. • 3545 North First St. • San Jose, CA 95134 • USA PRODUCT/PROCESS CHANGE NOTICE PCN PCN Number: 05-15 Date: 4-Oct-2005 Means of Distinguishing Changed Devices: Product Mark Back Mark Product(s) Affected: SaRonix S1800, S1803, and S1850 series Clock

mark 5503 MOSFET

Abstract: m233 transistor TH-3 TH-4 TH-6 transistor m236
Contextual Info: / Dimensions mm Lead-1 Lead-1 A Lead-2 Lead-2A Lead-3 Lead-3A Voltage dass, Lot No. 'A \ aO.E 25 min. Lead-4 Cathode mark class, Lot No. 03.0 5.0 ^ \ 00.8 Cathode mark / 25 min. 28 min. Lead-5A Voltage class, Lot No. -1*4- 5.0 03.0 28 min. Lead-6 Voltage dass, Lot No.

I1117

Contextual Info: 0 .5 4 .0 Pos. MARK <£- - 5* ; A \ N r- -1 A -tìz1i 1_1 ~ j - V C A V IT Y ^ T t* T P t iM f f lS y — 3. SR'Î^J-iaiÆ^.+S- « 1 14-57 79 j¿ r~ 0 3 i — p : J08-5408 & > — NO TES,A r — C L-L - s: C = f= ^ - < = f1 i '.i V / i_L TRADE MARK

MMBT2369

Abstract: MARK 1J HIGH SPEED SWITCHING NPN SOT23 MMBT2369 SOT23
Contextual Info: MMBT2369 NPN Switching Transistor MMBT2369 NPN Switching Transistor • This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. • Sourced from process 21. C E SOT-23 Mark: 1J B Absolute Maximum Ratings * T a Symbol

Contextual Info: U l/l CD r CO I O A T R I ANG LE MARK w ^ SECT. rr _ B - B CSCALE rr 3 - T Y P E - 2 ) 2-1) ] A CHAMFER TT1 T R IA N G L E - A /X CHAM FER MARK (T Y P E - 1 ) o /f SECT. <r . /f A CSCALE 1i LU A V A IL A B L E NOT ABA IL A B L E ji 1 —□□ zo o Osi _

NEh jJ8

Abstract: k30270 LB 11911 095275-VK20BA ue09 KM 7-C 1 UF -20 100V 74S83 S0807 74LS32N z3ans
Contextual Info: R E V IS IO N S DESCRIPT'ON » * * LTR MARK AM*« P iK PXÛC1S1 Z v cmpcz procgsz z. 2 PL J L MARK PEU PE0C£5S J p 6 H A A # i WAS 9?Z7£9-toZW E 6 m * T £ D * £ / i £ r £ t d i0 £ # i/ tty * * ¡è k w - ¿ A J 4 0 1 6 9 / & J / O / i. — to * D D £ D

1j capacitor

Abstract: td331
Contextual Info: HF / FILTERS KC2A KC 1J & KC 2AF three terminal FILTER STRUCTURE 1 Insulator 2 Inner electrode Ag 3 Outer terminations 3a Ag - Pd electrode 3b Ni Plating 3c Solder plating 4 GND terminations 5 Glass coating 6 Polarity mark f CAPACITOR / INDUCTOR KC Bottom

MMBT2369

Abstract: HIGH SPEED SWITCHING NPN SOT23
Contextual Info: MMBT2369 MMBT2369 NPN Switching Transistor • This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. • Sourced from process 21. G S D SOT-23 Mark: 1J Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol

Contextual Info: MMBT2369 / PN2369 NPN Switching Transistor • This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. • Sourced from process 21. MMBT2369 PN2369 C E SOT-23 B TO-92 1 Mark: 1J Absolute Maximum Ratings * T a Symbol

PN2369

Abstract: PN2369 EQUIVALENT HIGH SPEED SWITCHING NPN SOT23 FAIRCHILD SOT-23 MARK 30 MMBT2369
Contextual Info: MMBT2369 / PN2369 NPN Switching Transistor • This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. • Sourced from process 21. MMBT2369 PN2369 C E SOT-23 B TO-92 1 Mark: 1J Absolute Maximum Ratings * T a Symbol

mark FEC

Abstract: ix 2429
Contextual Info: 10 ¿^JR AD E 3.7 A trade MARK MARK MADE IN J A P A N : M X J MADE IN M A L A Y S I A : M X L FEC l^ l'T : a ; l A « e ia / -h ”1j -f s k s m m . L 3; f g 7 t ^ ia f a f i'b S 7 S Ä y iiii iS iL S i„ AB0U7 FPC: RECOMMENDED PUNCHER D IR E C T IO N sFORM CONDUCTOR

1g47s

Abstract: toshiba LTM 08 TSZ1G45S TSZ1G47S TSZ1J45S TSZ1J47S control relay
Contextual Info: TOSHIBA TSZ1G45S,TSZ1J45S,TSZ1G47S,TSZ1J47S TOSHIBA SOLID STATE AC RELAY TSZ1G45S, TSZ1J45S, TSZ1G47S, TSZ1J47S Unit in mm OPTICALLY ISOLATED, NORMALLY OPEN SSR 15 MAX. 47 MAX. COMPUTER PERIPHERALS TYPE MARK ✓. MACHINE TOOL CONTROLS PROCESS CONTROL SYSTEMS

BC848

Contextual Info: SEMICONDUCTOR BC848 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 1J 1 2 Item Marking Description Device Mark 1 BC848 hFE Grade J J, K, L * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

BC848W

Contextual Info: SEMICONDUCTOR BC848W MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 1J 1 2 Item Marking Description Device Mark 1 BC848W hFE Grade J A J , B(K), C(L) * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note) * Lot No. marking method

CTPR10

Abstract: 2n2 j 1600 1n5 j 1600
Contextual Info: INDUCTORS TECHNOLOGY OF TOMORROW MULTILAYER STRUCTURE CERAMIC INDUCTORS MHL MHI 1 2 3 4 5 Solder plating Diffusion barrier Silver metallisation Ceramic Electrodes IDENTIFICATION TYPE COATING COLOR MARKING MHL xx C Black MHL 1E K White None Polarity mark

SOT89 MARKING CODE 3D

Abstract: sot89 mark code AE sot23 mark code AE 3D sot23 SOT89 marking cec SOT89 MARKING CODE 43 marking 1p sot23 sot23 p04 marking marking P1R SOT89 MARKING 5G
Contextual Info: Philips Sem iconductors Small-signal Transistors Marking MARKING LIST Types in SC59, SC70, SOT23, SOT89, SOT143, SOT223 and SOT323 packages are marked with a code as listed in the following tables. The actual type number and data code are on the packing. MARK

Contextual Info: GaAs IC SPDT Switch With Integral Driver Non-Reflective DC-4 GHz ESAlpha AK004M2-11 Features • Integral Driver ±5 V Supply Voltages -11 ORIENTATION MARK 0.180 4.57 mm SQ . MAX. ■ High Isolation, Non-Reflective ■ 8 Lead Hermetic Surface Mount Package

0N6S

Abstract: tb10ns
Contextual Info: INDUCTORS TECHNOLOGY OF TOMORROW THIN FILM STRUCTURE CHIP INDUCTOR KL73 1 2 3 4 5 6 7 8 9 10 Ceramic substrate Cross electrode Polymide insulated film Cu thin film coil pattern Epoxy protection film Ni barrier Solder plating Via hole Direction mark Marking

Contextual Info: MAXIMUM SOLUTIONS Mill-Max Target Connectors for Spring Pins Hit the Mark Mill-Max Target Connectors provide a convenient mating surface to connect with Mill-Max spring pins. They can be utilized in any spring pin application requiring conductive lands. Examples are: board stacking, elevated

n68 j 250

Abstract: TE56N OF 22 nH INDUCTOR TP-2N2 Inductor 0.5 nH TE10N
Contextual Info: INDUCTORS THIN FILM STRUCTURE CHIP INDUCTOR KL73 1 2 3 4 5 6 7 8 9 10 Ceramic substrate Cross electrode Polymide insulated film Cu thin film coil pattern Epoxy protection film Ni barrier Solder plating Via hole Direction mark Marking IDENTIFICATION PRODUCT CODE

MARKING H9

Contextual Info: INDUCTORS TECHNOLOGY OF TOMORROW THIN FILM CHIP INDUCTOR KL73 STRUCTURE 1 2 3 4 5 6 7 8 9 10 Ceramic substrate Cross electrode Polymide insulated film Cu thin film coil pattern Epoxy protection film Ni barrier Solder plating Veer hole Direction mark Marking

Contextual Info: INDUCTORS TECHNOLOGY OF TOMORROW THIN FILM STRUCTURE CHIP INDUCTOR KL73 1 2 3 4 5 6 7 8 9 10 Ceramic substrate Cross electrode Polymide insulated film Cu thin film coil pattern Epoxy protection film Ni barrier Solder plating Via hole Direction mark Marking

marking TB

Abstract: 8 tb 08 Marking code H6 TE 56 -ATC
Contextual Info: INDUCTORS THIN FILM STRUCTURE CHIP INDUCTOR KL73 1 2 3 4 5 6 7 8 9 10 Ceramic substrate Cross electrode Polymide insulated film Cu thin film coil pattern Epoxy protection film Ni barrier Solder plating Via hole Direction mark Marking IDENTIFICATION PRODUCT CODE

Contextual Info: INDUCTORS TECHNOLOGY OF TOMORROW THIN FILM STRUCTURE CHIP INDUCTOR KL73 1 2 3 4 5 6 7 8 9 10 Ceramic substrate Cross electrode Polymide insulated film Cu thin film coil pattern Epoxy protection film Ni barrier Solder plating Via hole Direction mark Marking