MAR 208 TRANSISTOR Search Results

2SC5225

Abstract: DSA003642
Contextual Info: 2SC5225 Silicon NPN Epitaxial Transistor ADE-208-393A Z 2nd. Edition Mar. 2001 Application • Wide band video output amplifier for color CRT monitor. • High frequency high voltage amplifier. • High speed power switching. Features • High voltage large current operation.

2SC5137

Abstract: DSA003641
Contextual Info: 2SC5137 Silicon NPN Epitaxial ADE-208-224A Z 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 10 GHz typ • High gain, low noise figure PG = 16.5 dB typ, NF = 1.5 dB typ at f = 900 MHz Outline

2SC4926

Abstract: 2SC5050 DSA003638
Contextual Info: 2SC5050 Silicon NPN Epitaxial ADE-208-1130A Z 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 11 GHz Typ • High gain, low noise figure PG = 14.0 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline

2SC4988

Abstract: 847S DSA003635
Contextual Info: 2SC4988 Silicon NPN Epitaxial ADE-208-004A Z 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 8.5 GHz Typ • High gain, low noise figure PG = 10.5 dB Typ, NF = 1.3 dB Typ at f = 900 MHz Outline

zo 607

Abstract: ZO 607 MA transistor zo 607 ZO 109 TRANSISTOR ECG 377 zo 107 equivalent ZO 607 ZO 103 zo 103 ma 2SC4995
Contextual Info: 2SC4995 Silicon NPN Epitaxial ADE-208-013A Z 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 11 GHz Typ • High gain, low noise figure PG = 16.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline

TRANSISTOR marking 489 code

Abstract: pc 817 2SC5218 DSA003641
Contextual Info: 2SC5218 Silicon NPN Epitaxial ADE-208-279A Z 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 9 GHz typ • High gain, low noise figure PG = 13.0 dB typ, NF = 1.2 dB typ at f = 900 MHz Outline

2SC4926

Abstract: 2SC5051 Hitachi transistor DSA003638
Contextual Info: 2SC5051 Silicon NPN Epitaxial ADE-208-1131A Z 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 11 GHz Typ • High gain, low noise figure PG = 14.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline

Hitachi DSA0076

Abstract: 2SC5141
Contextual Info: 2SC5141 Silicon NPN Epitaxial ADE-208-228A Z 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 5.8 GHz typ • High gain, low noise figure PG = 13 dB typ, NF = 1.6 dB typ at f = 900 MHz Outline

Hitachi DSA0076

Abstract: 2SC5138
Contextual Info: 2SC5138 Silicon NPN Epitaxial ADE-208-225A Z 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 6 GHz typ • High gain, low noise figure PG = 13 dB typ, NF = 1.8 dB typ at f = 900 MHz Outline SMPAK

Hitachi DSA002783

Contextual Info: 3SK321 Silicon N-Channel Dual Gate MOS FET ADE-208-711B Z 3rd. Edition Mar. 2001 Application UHF RF amplifier Features • Low noise figure. NF = 2.0 dB typ. at f = 900 MHz • Capable of low voltage operation • Provide mini mold packages; MPAK-4R(SOT-143 var.)

Hitachi DSA0076

Abstract: 2SC5136
Contextual Info: 2SC5136 Silicon NPN Epitaxial ADE-208-223A Z 2nd. Edition Mar. 2001 Application VHF/UHF wide band amplifier Features • High gain bandwidth product fT = 3.8 GHz typ • High gain, low noise figure PG = 11 dB typ, NF = 2.5 dB typ at f = 900 MHz Outline SMPAK

Hitachi DSA0076

Abstract: 2SC5140
Contextual Info: 2SC5140 Silicon NPN Epitaxial ADE-208-227A Z 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 9 GHz typ • High gain, low noise figure PG = 15 dB typ, NF = 1.6 dB typ at f = 900 MHz Outline SMPAK

2SK2685

Abstract: DSA003642
Contextual Info: 2SK2685 GaAs HEMT ADE-208-400A Z 2nd. Edition Mar. 2001 Application • UHF low noise amplifier Features • • • • Excellent low noise characteristics. Fmin = 0.83dB Typ (3V, 10mA, 2GHz) High associated gain. Ga = 17 dB Typ (3V, 10mA, 2GHz) High voltage. V DS = 6 or more voltage.

3sk298

Abstract: DSA003642
Contextual Info: 3SK298 Silicon N-Channel Dual Gate MOS FET ADE-208-390A Z 2nd. Edition Mar. 2001 Application UHF / VHF RF amplifier Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Outline CMPAK–4 2 3 1 4 Note: 1. Source

3SK295

Abstract: DSA003641
Contextual Info: 3SK295 Silicon N-Channel Dual Gate MOS FET ADE-208-387A Z 2nd. Edition Mar. 2001 Application UHF RF amplifier Features • Low noise figure. NF = 2.0 dB typ. at f = 900 MHz • Capable of low voltage operation Outline MPAK-4 2 3 1 4 Note: 1. Source 2. Gate1

3SK297

Abstract: DSA003642
Contextual Info: 3SK297 Silicon N-Channel Dual Gate MOS FET ADE-208-389A Z 2nd. Edition Mar. 2001 Application UHF / VHF RF amplifier Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Outline MPAK-4 2 3 1 4 Note: 1. Source

2n uhf fet

Abstract: Hitachi DSA002730 3sk322
Contextual Info: 3SK322 Silicon N-Channel Dual Gate MOS FET ADE-208-712B Z 3rd. Edition Mar. 2001 Application UHF / VHF RF amplifier Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation • Provide mini mold packages; MPAK-4R(SOT-143 var.)

301 marking code PNP transistor

Abstract: PBSS4350D PBSS5350D
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D302 PBSS5350D PNP transistor Product specification 2000 Mar 08 Philips Semiconductors Product specification PNP transistor PBSS5350D PINNING FEATURES • High current capabilities PIN • Low VCEsat.

PBSS4350D

Abstract: PBSS5350D MCD920
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D302 PBSS4350D NPN transistor Product specification 2000 Mar 08 Philips Semiconductors Product specification NPN transistor PBSS4350D PINNING FEATURES • High current capabilities PIN • Low VCEsat.

MRC039

Abstract: ST MRC039 transistor Gigahertz BFQ67T SC-75 MRC041 mrc043 "marking Code" V2 Marking code V2
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BFQ67T NPN 8 GHz wideband transistor Product specification Supersedes data of 1999 Nov 02 2000 Mar 06 Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67T FEATURES DESCRIPTION • High power gain

MAR 745 TRANSISTOR

Abstract: BFR505T MRC013 SC-75
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BFR505T NPN 9 GHz wideband transistor Product specification Supersedes data of 1999 Feb 11 2000 Mar 14 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR505T FEATURES DESCRIPTION • Low current consumption

PBSS4140U

Abstract: PBSS5140U
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D102 PBSS5140U PNP BISS transistor Product specification 2001 Mar 27 Philips Semiconductors Product specification PNP BISS transistor PBSS5140U FEATURES PINNING • High current max. 1 A PIN • Low collector-emitter saturation voltage ensures

BP317

Abstract: PBSS4140T PBSS5140T
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET lfpage M3D088 PBSS4140T NPN BISS transistor Product specification 2001 Mar 23 Philips Semiconductors Product specification NPN BISS transistor PBSS4140T PINNING FEATURES • Low VCEsat PIN • High current capabilities. APPLICATIONS

Contextual Info: AOD11S60/AOI11S60 600V 11A α MOS TM Power Transistor General Description Product Summary The AOD11S60 & AOI11S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.