MAR 202 Search Results

Contextual Info: S Welwyn Ultra Precision Metal Film Resistor MAR 40/42 SERIES * Tolerance down to 0.005% * Very lowTCRs * Rugged moulded protection * 3.8 and 5.1mm lead spacing available * Matched sets available ELECTRICAL DATA MAR 42 MAR 40 Power rating at 85°C watts 0.3

Contextual Info: K4S560832C CMOS SDRAM 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Mar. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Mar. 2001 K4S560832C CMOS SDRAM Revision History Revision 0.0 Mar. 06, 2001

k4s560432c

Contextual Info: K4S560432C CMOS SDRAM 256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Mar. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Mar. 2001 K4S560432C CMOS SDRAM Revision History Revision 0.0 Mar. 06, 2001

2MBI300U4E-120

Abstract: ED-4701 MS5F6058 MT5F12959
Contextual Info: SPECIFICATION Device Name : Type Name : Spec. No. Mar. 09 ’05 S.Miyashita Mar. 09 ’05 T.Miyasaka K.Yamada : Y.Seki IGBT MODULE 2MBI300U4E-120 MS5F 6058 MS5F6058 1 a 13 H04-004-07b R e v i s e d Date Classification Mar.-09 -’05 Enactment Oct.-25-’05

2MBI75U4A-120

Abstract: 2mbi75u4a120 IGBT 2MBI75U4A-120 FUJI 2MBI75U4A ED-4701 MT5F12959
Contextual Info: SPECIFICATION Device Name : IGBT MODULE Type Name : 2MBI75U4A-120 Spec. No. Mar. 09 ’05 S.Miyashita Mar. 09 ’05 T.Miyasaka K.Yamada : Y.Seki MS5F 6060 MS5F6060 1 a 13 H04-004-07b R e v i s e d Date Classification Mar.-09 -’05 Enactment May.-31 -’06

1MBI600U4B-120

Abstract: ED-4701 MT5F12959
Contextual Info: SPECIFICATION Device Name : Type Name : Spec. No. Mar. 09 ’05 S.Miyashita Mar. 09 ’05 T.Miyasaka K.Yamada : Y.Seki IGBT MODULE 1MBI600U4B-120 MS5F 6062 MS5F6062 1 a 13 H04-004-07b R e v i s e d Date Classification Mar.-09 -’05 Enactment Oct.-25-’05

2MBI150U4B-120

Abstract: ED-4701 MT5F12959
Contextual Info: SPECIFICATION Device Name : Type Name : Spec. No. Mar. 09 ’05 S.Miyashita Mar. 09 ’05 T.Miyasaka K.Yamada : Y.Seki IGBT MODULE 2MBI150U4B-120 MS5F 6059 MS5F6059 1 13 H04-004-07b R e v i s e d Date Classification Mar.-09 -’05 Enactment Ind. Content R e c o r d s

2MBI450U4E-120

Abstract: 2mbi450u4e 2mbi450u4e120 ms5f6057 ED-4701 MT5F12959 2MBI450U4
Contextual Info: SPECIFICATION Device Name : Type Name : Spec. No. Mar. 09 ’05 S.Miyashita Mar. 09 ’05 T.Miyasaka K.Yamada : Y.Seki IGBT MODULE 2MBI450U4E-120 MS5F 6057 MS5F6057 1 13 H04-004-07b R e v i s e d Date Classification Mar.-09 -’05 Enactment Ind. Content R e c o r d s

2MBI100U4A-120

Abstract: ED-4701 MT5F12959 MS5F6061
Contextual Info: SPECIFICATION Device Name : Type Name : Spec. No. Mar. 09 ’05 S.Miyashita Mar. 09 ’05 T.Miyasaka K.Yamada : Y.Seki IGBT MODULE 2MBI100U4A-120 MS5F 6061 MS5F6061 1 13 H04-004-07b R e v i s e d Date Classification Mar.-09 -’05 Enactment Ind. Content R e c o r d s

fma20n50e

Abstract: 20N50E
Contextual Info: DATE DRAWN Mar.-29-'07 CHECKED Mar.-29-'07 CHECKED Mar.-29-'07 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor

16n60e

Abstract: marking code EA SMD MOSFET mosfet smd code tc FMB20N50E mosfet marking ke
Contextual Info: Device Name DATE DRAWN Mar.-30-'07 CHECKED Mar.-30-'07 CHECKED Mar.-30-'07 NAME APPROVED : DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used

fma16n60e

Abstract: FMA16N60E,16N60E
Contextual Info: DATE DRAWN Mar.-30-'07 CHECKED Mar.-30-'07 CHECKED Mar.-30-'07 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor

16n60e

Abstract: marking code EA SMD MOSFET Method CF st smd diode marking code ex KE 16A DIODE
Contextual Info: Device Name DATE DRAWN Mar.-30-'07 CHECKED Mar.-30-'07 CHECKED Mar.-30-'07 NAME APPROVED : DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used

Contextual Info: 32 SH7265 Group User's Manual: Hardware Renesas 32-Bit RISC Microcomputer SuperH RISC engine Family / SH7260 Series SH7265 R5S72650P200BG R5S72651P200BG R5S72652P200BG R5S72653P200BG Rev.3.00 Mar 2014 Page iiof xxxvi R01UH0472EJ0300 Rev. 3.00 Mar. 27, 2014

DA 1402

Abstract: 49733 SETA ne 037
Contextual Info: K10 Sub-Family Reference Manual Supports: MK10N512VLK100, MK10N512VMB100 Document Number: K10P81M100SF2RM Rev. 4, 1 Mar 2011 Preliminary K10 Sub-Family Reference Manual, Rev. 4, 1 Mar 2011 2 Preliminary Freescale Semiconductor, Inc. Contents Section Number

cmos 556 timer

Abstract: voltage to frequency converter using ic 556 timer YA 1241 Dp 104 MagnaChip Semiconductor MC80C0104/0204 MC80C0104 MC80C0204 MC80F0104 MC80F0204
Contextual Info: MAGNACHIP SEMICONDUCTOR LTD. 8-BIT SINGLE-CHIP MICROCONTROLLERS MC80F0104/0204 MC80C0104/0204 Preliminary User’s Manual Ver. 0.2 REVISION HISTORY VERSION 0.2 (MAR. 2005) This book Fix some errata. VERSION 0.1 (MAR. 2005) This book First Edition Version 0.2

Contextual Info: Resistors Ultra Precision Make Possible Ultra MetalPrecision Film Resistors Metal Film Resistors Welwyn Components MAR 40/42 series MAR 40/42 seriesdown • Tolerance to 0.005% Very lowdown TCRsto 0.005% • Tolerance low TCRs Rugged moulded protection • Very

TB 1275 N DATA SHEET

Abstract: pal 005a CHN 841 CHN 747 TB 1226 BN tms 3616 tone generator ic 731 1624 pj12 diode TB 1226 EN PJ8 diode
Contextual Info: REJ09B0351-0100 32 SH7265 Group Hardware Manual TM SuperH Renesas 32-Bit RISC Microcomputer RISC engine Family / SH7260 Series SH7265 Rev.1.00 Revision Date: Mar. 14, 2008 R5S72650P200BG R5S72651P200BG R5S72652P200BG R5S72653P200BG Rev. 1.00 Mar. 14, 2008 Page ii of xxxvi

MC80F0316B/0316G

Contextual Info: MAGNACHIP SEMICONDUCTOR LTD. 8-BIT SINGLE-CHIP MICROCONTROLLERS MC83F0304/0308/0314 MC83C0304/0308/0316 Preliminary User’s Manual Ver. 0.2 REVISION HISTORY VERSION 0.2 (MAR. 2005) This book Fix some errata. VERSION 0.1 (MAR. 2005) This book First Edition

2MBI300UC-120

Abstract: ED-4701 MT5F12959 IGBT TEST
Contextual Info: SPECIFICATION Device Name : IGBT Module Type Name : 2MBI300UC-120 Spec. No. : MS5F 5416 Fuji Electric Co.,Ltd. Matsumoto Factory Mar. 20 '03 Y.Kobayashi Mar. 20 '03 T.Miyasaka K.Yamada T.Fujihira MS5F 5416 a 1 13 H04-004-07 Revised Records Date Classification

PS3 rsx

Abstract: mc80f0448q Motorolla 2N2907 DI YA 0432 use of ps2 female connector pin diagram marking T2O MC80F0448 0448L cmos 556 timer MC800
Contextual Info: MAGNACHIP SEMICONDUCTOR LTD. 8-BIT SINGLE-CHIP MICROCONTROLLERS MC80F0424/0432/0448 MC80C0424/0432/0448 User’s Manual Ver. 0.2 Version History Ver 0.2 (MAR, 2005) this book FLASH memory feature is included. Ver 0.1 (MAR, 2005) First release version. Version 0.2

CHN T4 1060

Abstract: pal 005a 458 TIMER CIRCUIT COLLECTION SH 628-12 rda 1486 TLC 1298 bosch al 1450 dv TB 1227 BN CHN 623 Diodes CHN 703
Contextual Info: REJ09B0372-0100 32 SH7205 Group Hardware Manual TM SuperH Renesas 32-Bit RISC Microcomputer RISC engine Family / SH7200 Series SH7205 Rev.1.00 Revision Date: Mar. 25, 2008 R5S72050W200BG Rev. 1.00 Mar. 25, 2008 Page ii of xxxii Notes regarding these materials

AC digital ampermeter

Abstract: K4S281632D
Contextual Info: K4S281632D CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.0 Mar. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Mar. 2001 K4S281632D CMOS SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM

K4S280832D

Contextual Info: K4S280832D CMOS SDRAM 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.0 Mar. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Mar. 2001 K4S280832D CMOS SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM