MAM423 Search Results

str 6707

Abstract: TSSOP8 texas BP317 BSH301
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BSH301 Dual N-channel enhancement mode MOS transistor Objective specification 1999 Apr 06 Philips Semiconductors Objective specification Dual N-channel enhancement mode MOS transistor BSH301 FEATURES • 40 mΩ on-state resistance at 2.5 V gate drive