MAIN 0S Search Results
MAIN 0S Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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V62/14616-01XE |
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2.7-5.5V Dual In/Single Out MOSFET, 0.5A Main/0.1A Aux Input, Act-High Enable 5-SOT-23 -55 to 125 |
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TPS2105MDBVREP |
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2.7-5.5V Dual In/Single Out MOSFET, 0.5A Main/0.1A Aux Input, Act-High Enable 5-SOT-23 -55 to 125 |
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TPS2100DBVR |
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2.7-4V Dual In/Single Out MOSFET, 0.5A Main/0.01A Aux Input, Act-Low Enable, Comm. Temp. 5-SOT-23 -40 to 85 |
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TPS2104DBVR |
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2.7-5.5V Dual In/Single Out MOSFET, 0.5A Main/0.1A Aux Input, Act-Low Enable, Industrial Temp. 5-SOT-23 -40 to 85 |
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TPS2100DBVT |
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2.7-4V Dual In/Single Out MOSFET, 0.5A Main/0.01A Aux Input, Act-Low Enable, Comm. Temp. 5-SOT-23 -40 to 85 |
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MAIN 0S Price and Stock
Advantech Co Ltd AMIS-60-SB-MAIN-AEModules Accessories Storage Box Main Housing for AMIS-60 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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AMIS-60-SB-MAIN-AE |
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MAIN 0S Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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ms3113
Abstract: MS3114 dfc1_h UNEF-2A MIL-DTL-26482
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DFC02H-8- DFC02H-10- DFC02H-12- DFC02H-14- DFC02H-16- DFC02H-18- DFC02H-20- MIL-DTL-26482 MS3116. 1x10CM3/SEC ms3113 MS3114 dfc1_h UNEF-2A | |
MIL-C-26074C
Abstract: CCH.99.281.505 LEMO IEC-169-1-3 agh 003 Lemo 5K EPK.00.250.NTN LEMO FFA.00 EPL.00.250.NTN lemo LEMO 00 connectors
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Charac17 MIL-C-26074C CCH.99.281.505 LEMO IEC-169-1-3 agh 003 Lemo 5K EPK.00.250.NTN LEMO FFA.00 EPL.00.250.NTN lemo LEMO 00 connectors | |
YL 69 moisture
Abstract: LEMO FGG.2B lemo HEG 0K lemo fgg.2k CONNECTOR series avional 14 LEMO A31189 MIL-C-22520/7-01 FGG.0B.731.DN LEMO FGG.1B
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9C0000Contextual Info: 128Mb: P8P Parallel PCM Features P8P Parallel Phase Change Memory PCM Features • Security – One-time programmable registers 64 unique factory device identifier bits 2112 user-programmable OTP bits – Selectable OTP space in main array – Three adjacent main blocks available for boot code |
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128Mb: 115ns 135ns 128KB 09005aef8447d46d/Source: 09005aef845b5c96 9C0000 | |
9C0000Contextual Info: 128Mb: P8P Parallel PCM Features P8P Parallel Phase Change Memory PCM Features • Security – One-time programmable registers 64 unique factory device identifier bits 2112 user-programmable OTP bits – Selectable OTP space in main array – Three adjacent main blocks available for boot code |
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128Mb: 115ns 135ns 128KB 09005aef8447d46d/Source: 09005aef845b5c96 9C0000 | |
Contextual Info: 128Mb: P8P Parallel PCM Features P8P Parallel Phase Change Memory PCM Features • Security – One-time programmable registers 64 unique factory device identifier bits 2112 user-programmable OTP bits – Selectable OTP space in main array – Three adjacent main blocks available for boot code |
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128Mb: 115ns 135ns 128KB blocks-0006, 09005aef8447d46d/Source: 09005aef845b5c96 | |
IBM39
Abstract: 720x608 eNV420 eNV42 SA-12E pml 018
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IBM39 eNV420 eNV422 G522-0606-00 720x608 eNV42 SA-12E pml 018 | |
3.6v WHITE LED 5mm
Abstract: C2M marking code CAM match transistor match sense line match sense LINEAR MARKING marking code C5 SWITCH MODE CURRENT SOURCE tantalum 10-35 LTC3209-1 LTC3209-2 LTC3209EUF-1
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LTC3209-1/LTC3209-2 600mA LTC3209-1: 400mA LTC3209-2: 200mA 16-Lead LTC3251 500mA 3.6v WHITE LED 5mm C2M marking code CAM match transistor match sense line match sense LINEAR MARKING marking code C5 SWITCH MODE CURRENT SOURCE tantalum 10-35 LTC3209-1 LTC3209-2 LTC3209EUF-1 | |
LTC3209-1
Abstract: LTC3209-2 LTC3209EUF-1 LTC3209EUF-2 marking c2m
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LTC3209-1/LTC3209-2 600mA LTC3209-1: 400mA LTC3209-2: 200mA 16-Lead LTC3251 500mA LTC3209-1 LTC3209-2 LTC3209EUF-1 LTC3209EUF-2 marking c2m | |
LEMO 8 pin connectorContextual Info: PLASTIC R SERIES CONNECTORS SERIES ® Table of Contents General Production Program. .page 2 Main Characteristics and |
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P01213 LEMO 8 pin connector | |
LEMO 8 pin connectorContextual Info: PLASTIC R SERIES CONNECTORS SERIES ® Table of Contents General Production Program. .page 2 Main Characteristics and |
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P0209 LEMO 8 pin connector | |
1669M-96
Abstract: B9106 en 60721-3-3 1/takamisawa RELAYS jy 110
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D-35305 D-35301 807-es 1669M-96 B9106 en 60721-3-3 1/takamisawa RELAYS jy 110 | |
C67078-A1009-A5Contextual Info: öfl» D • *_:- r — :- - f i I- 1- —- - - û23St.0S QDlMbbD S » S I E G 88D 14660 "i / D BUZ 53 C _ SIEMENS A K T I E N G E S E L L S C H A F -Main ratings |
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C67078-A1009-A5 0Q14bb5 C67078-A1009-A5 | |
asssbContextual Info: m ÖÖD D ö23SbOS Q0147G2 b « S I E 6 8 8D 14702 □ r -3 < 7 -// SIEMENS AKTIENGESELLSCHAF _ Main ratings Draln-source voltage Continuous drain current Draln-source on-reslstance N-Channel - 400 V K>a = 5,9 A 4 ^0S «l = 1,0 f i Qo- Description |
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23SbOS Q0147G2 C67078-A1016-A2 fl23SbOS 00147Db BUZ63 asssb | |
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HP Keyboard KB 0316
Abstract: E1301A HP-E1401A HP Keyboard KB 0316 connector E1460A c64016 TS5400 E1499 EN50082-1 E1405
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E1326B/E1411B TS-5400 HP Keyboard KB 0316 E1301A HP-E1401A HP Keyboard KB 0316 connector E1460A c64016 TS5400 E1499 EN50082-1 E1405 | |
LC1 FK 43Contextual Info: SAMSUN KS57C2408A/2416A 4-BIT CMOS Microcontroller Product Specification OVERVIEW The KS57C2408A/2416A single-chip CMOS microcontroller is designed for very high performance using Samsung's newest 4-bit product development approach, SAM4 Samsung Arrangeable Microcontrollers . Its main |
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KS57C2408A/2416A KS57C2408A/2416A up-to-12-digit 16-bit 408A/2416A" 80-pin 408A/2416A LC1 FK 43 | |
Contextual Info: fiäD D • ñ53SbQS ooi4ss2 5 « s i e g 88D 14552 BUZ 34 SIEMENS AKTIENGESELLSCHAF Main ratings N-Channel Drain-source voltage y03 = 200 V Contlnuous drain current ID a 14 A Draln-source on-reslstance f l 0s on s 0,2 H Description Case SIPMOS, N-channel, enhancement mode |
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53SbQS C67078-A1005-A2 | |
IEC 60947-3 MOELLER
Abstract: AC-21A AC21A IEC EN 60947-3 E36332 EN 60947-3 ZVV-T0 ZAV-T0 T8-3-8342 AC23A AC-23A
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Ambie342/ HPL-ED2009 AC-21A IEC 60947-3 MOELLER AC21A IEC EN 60947-3 E36332 EN 60947-3 ZVV-T0 ZAV-T0 T8-3-8342 AC23A AC-23A | |
Contextual Info: OBSOLETE PRELIMINARY 1 MEG x 8 BOOT BLOCK FLASH MEMORY MT28F008B1 FLASH MEMORY SMARTVOLTAGE FEATURES PIN ASSIGNMENT Top View • Eleven erase blocks: 16KB boot block (protected) Two 8KB parameter blocks Eight main memory blocks • SmartVoltage Technology (SVT): |
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MT28F008B1 110ns 40-Pin 80ns/110ns | |
IEC 60947-4-1 for ABB
Abstract: ABB Magnetic contactor IEC 60947-4-1 50/60HZ abb A 16-30-10 CAL 5-11 ABB abb al 26-30-01 TRANSISTOR R1002 transistor r1010 R1004 transistor ABB AL9 entrelec diode
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1SBC141135C0301 1SBC101139C0201 F-69685 C0201 IEC 60947-4-1 for ABB ABB Magnetic contactor IEC 60947-4-1 50/60HZ abb A 16-30-10 CAL 5-11 ABB abb al 26-30-01 TRANSISTOR R1002 transistor r1010 R1004 transistor ABB AL9 entrelec diode | |
MG400H1FL1
Abstract: TOSHIBA Thyristor calculation of IGBT snubber transistor circuit design
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AC21A
Abstract: IEC EN 60947-3 AC-21A IEC 60947-3 MOELLER E36332 en 60947-3 AC-23A C2007G CSA-C22 DIN-46228 T3
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T3-1-8200/EA/SVB T3-1-8200/. 60068-2-3von T838342/. HPL-ED2009 AC-21A AC21A IEC EN 60947-3 IEC 60947-3 MOELLER E36332 en 60947-3 AC-23A C2007G CSA-C22 DIN-46228 T3 | |
psd5xx
Abstract: laser interrupt counter 80C196 assembly language 80C196 assembly language PROGRAM counter driver cmos HATTELAND ir 939 microcontroller based automatic power factor control PSD503B1 shift register
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800-TEAM-WSI psd5xx laser interrupt counter 80C196 assembly language 80C196 assembly language PROGRAM counter driver cmos HATTELAND ir 939 microcontroller based automatic power factor control PSD503B1 shift register | |
Contextual Info: HY57V658020BTC 8Mx8-bit, 4K Ref., 4Banks, 3.3V DESCRIPTION The Hynix HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V658020B is organized as 4banks of 2,097,152x8. |
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HY57V658020BTC HY57V658020B 864-bit 152x8. |