MAIN 0S Search Results
MAIN 0S Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| V62/14616-01XE | Texas Instruments | 2.7-5.5V Dual In/Single Out MOSFET, 0.5A Main/0.1A Aux Input, Act-High Enable 5-SOT-23 -55 to 125 |
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| TPS2105MDBVREP | Texas Instruments | 2.7-5.5V Dual In/Single Out MOSFET, 0.5A Main/0.1A Aux Input, Act-High Enable 5-SOT-23 -55 to 125 |
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| TPS2100DBVT | Texas Instruments | 2.7-4V Dual In/Single Out MOSFET, 0.5A Main/0.01A Aux Input, Act-Low Enable, Comm. Temp. 5-SOT-23 -40 to 85 |
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| TPS2104DBVT | Texas Instruments | 2.7-5.5V Dual In/Single Out MOSFET, 0.5A Main/0.1A Aux Input, Act-Low Enable, Industrial Temp. 5-SOT-23 -40 to 85 |
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| TPS2100DBVR | Texas Instruments | 2.7-4V Dual In/Single Out MOSFET, 0.5A Main/0.01A Aux Input, Act-Low Enable, Comm. Temp. 5-SOT-23 -40 to 85 |
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MAIN 0S Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
ms3113
Abstract: MS3114 dfc1_h UNEF-2A MIL-DTL-26482
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dfc02h-8-dfc02h-10-dfc02h-12-dfc02h-14-+10 | |
MIL-C-26074C
Abstract: CCH.99.281.505 LEMO IEC-169-1-3 agh 003 Lemo 5K EPK.00.250.NTN LEMO FFA.00 EPL.00.250.NTN lemo LEMO 00 connectors
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charac17mil-c-26074ccch.99.281.505 lemoiec-169-1-3+7 | |
9C0000Contextual Info: 128Mb: P8P Parallel PCM Features P8P Parallel Phase Change Memory PCM Features • Security – One-time programmable registers 64 unique factory device identifier bits 2112 user-programmable OTP bits – Selectable OTP space in main array – Three adjacent main blocks available for boot code |
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128mb115ns135ns128kb+3 | |
9C0000Contextual Info: 128Mb: P8P Parallel PCM Features P8P Parallel Phase Change Memory PCM Features • Security – One-time programmable registers 64 unique factory device identifier bits 2112 user-programmable OTP bits – Selectable OTP space in main array – Three adjacent main blocks available for boot code |
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128mb115ns135ns128kb+3 | |
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Contextual Info: 128Mb: P8P Parallel PCM Features P8P Parallel Phase Change Memory PCM Features • Security – One-time programmable registers 64 unique factory device identifier bits 2112 user-programmable OTP bits – Selectable OTP space in main array – Three adjacent main blocks available for boot code |
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128mb115ns135ns128kb+3 | |
IBM39
Abstract: 720x608 eNV420 eNV42 SA-12E pml 018
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ibm39env420env422g522-0606-00+4 | |
3.6v WHITE LED 5mm
Abstract: C2M marking code CAM match transistor match sense line match sense LINEAR MARKING marking code C5 SWITCH MODE CURRENT SOURCE tantalum 10-35 LTC3209-1 LTC3209-2 LTC3209EUF-1
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ltc3209-1/ltc3209-2600maltc3209-1400ma+13 | |
LTC3209-1
Abstract: LTC3209-2 LTC3209EUF-1 LTC3209EUF-2 marking c2m
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ltc3209-1/ltc3209-2600maltc3209-1400ma+8 | |
LEMO 8 pin connectorContextual Info: PLASTIC R SERIES CONNECTORS SERIES ® Table of Contents General Production Program. .page 2 Main Characteristics and |
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p01213lemo 8 pin connector | |
LEMO 8 pin connectorContextual Info: PLASTIC R SERIES CONNECTORS SERIES ® Table of Contents General Production Program. .page 2 Main Characteristics and |
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p0209lemo 8 pin connector | |
1669M-96
Abstract: B9106 en 60721-3-3 1/takamisawa RELAYS jy 110
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d-35305d-35301807-es1669m-96+3 | |
C67078-A1009-A5Contextual Info: öfl» D • *_:- r — :- - f i I- 1- —- - - û23St.0S QDlMbbD S » S I E G 88D 14660 "i / D BUZ 53 C _ SIEMENS A K T I E N G E S E L L S C H A F -Main ratings |
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c67078-a1009-a50q14bb5 | |
asssbContextual Info: m ÖÖD D ö23SbOS Q0147G2 b « S I E 6 8 8D 14702 □ r -3 < 7 -// SIEMENS AKTIENGESELLSCHAF _ Main ratings Draln-source voltage Continuous drain current Draln-source on-reslstance N-Channel - 400 V K>a = 5,9 A 4 ^0S «l = 1,0 f i Qo- Description |
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23sbosq0147g2c67078-a1016-a2fl23sbos+3 | |
96-SegContextual Info: KS57C2408 4-BIT CMOS Microcontroller ELECTRONICS Product Specification OVERVIEW The KS57C2408 single-chip CMOS microcontroller is designed for very high performance using Samsung's newest 4-bit product development approach, SAM4 Samsung Arrangeable Microcontrollers . Its main features |
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ks57c2408up-to-12-digit16-bit80-pin+4 | |
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LC1 FK 43Contextual Info: SAMSUN KS57C2408A/2416A 4-BIT CMOS Microcontroller Product Specification OVERVIEW The KS57C2408A/2416A single-chip CMOS microcontroller is designed for very high performance using Samsung's newest 4-bit product development approach, SAM4 Samsung Arrangeable Microcontrollers . Its main |
OCR Scan |
ks57c2408a/2416aup-to-12-digit16-bit408a/2416a+2 | |
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Contextual Info: fiäD D • ñ53SbQS ooi4ss2 5 « s i e g 88D 14552 BUZ 34 SIEMENS AKTIENGESELLSCHAF Main ratings N-Channel Drain-source voltage y03 = 200 V Contlnuous drain current ID a 14 A Draln-source on-reslstance f l 0s on s 0,2 H Description Case SIPMOS, N-channel, enhancement mode |
OCR Scan |
53sbqsc67078-a1005-a2 | |
IEC 60947-3 MOELLER
Abstract: AC-21A AC21A IEC EN 60947-3 E36332 EN 60947-3 ZVV-T0 ZAV-T0 T8-3-8342 AC23A AC-23A
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ambie342/hpl-ed2009ac-21aiec 60947-3 moeller+8 | |
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Contextual Info: OBSOLETE PRELIMINARY 1 MEG x 8 BOOT BLOCK FLASH MEMORY MT28F008B1 FLASH MEMORY SMARTVOLTAGE FEATURES PIN ASSIGNMENT Top View • Eleven erase blocks: 16KB boot block (protected) Two 8KB parameter blocks Eight main memory blocks • SmartVoltage Technology (SVT): |
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mt28f008b1110ns40-pin80ns/110ns | |
IEC 60947-4-1 for ABB
Abstract: ABB Magnetic contactor IEC 60947-4-1 50/60HZ abb A 16-30-10 CAL 5-11 ABB abb al 26-30-01 TRANSISTOR R1002 transistor r1010 R1004 transistor ABB AL9 entrelec diode
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1sbc141135c03011sbc101139c0201f-69685c0201+10 | |
MG400H1FL1
Abstract: TOSHIBA Thyristor calculation of IGBT snubber transistor circuit design
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mg400h1fl1toshiba thyristorcalculation of igbt snubbertransistor circuit design | |
AC21A
Abstract: IEC EN 60947-3 AC-21A IEC 60947-3 MOELLER E36332 en 60947-3 AC-23A C2007G CSA-C22 DIN-46228 T3
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t3-1-8200/ea/svbt3-1-8200/60068-2-3vont838342/+11 | |
psd5xx
Abstract: laser interrupt counter 80C196 assembly language 80C196 assembly language PROGRAM counter driver cmos HATTELAND ir 939 microcontroller based automatic power factor control PSD503B1 shift register
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800-team-wsipsd5xxlaser interrupt counter80c196 assembly language+7 | |
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Contextual Info: HY57V658020BTC 8Mx8-bit, 4K Ref., 4Banks, 3.3V DESCRIPTION The Hynix HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V658020B is organized as 4banks of 2,097,152x8. |
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hy57v658020btchy57v658020b864-bit152x8 | |
2sk1603
Abstract: 2SK2236 2SK1723 2SK2222 2sk538 2SK180S 2SK584 2SK1882 2SK1513 2sk1915
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2sj1152sj1232sj1262sj147+16 | |