MAGNETIC FIELD SENSOR Search Results

TN501

Abstract: TN-501 H06A-AC1-125-700 H06A-AD3-125-700 magnetic flux pickup strain gage strain Gages h06A delta strain rosette
Contextual Info: Magnetic Field Patterns Vishay Micro-Measurements Special Use Sensors - Magnetic Field Strain Gages Intense, time-varying electromagnetic fields with steep gradients in field strength can cause troublesome noise in strain gage circuits. In severe magnetic environments, with

KMZ41

Abstract: sensor o2 -a2 Wheatstone Bridge BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D315 KMZ41 Magnetic field sensor Preliminary specification Supersedes data of 1998 Mar 26 2000 Apr 18 Philips Semiconductors Preliminary specification Magnetic field sensor KMZ41 DESCRIPTION The KMZ41 is a sensitive magnetic field sensor,

din 17410

Abstract: 8309 magnetic head 2mm magnetic transistor wheatstone bridge with temp. sensor DIN17410 MAGNETIC HEAD circuit magnetic stripe ZMX40M ZMX40MT8TA
Contextual Info: ZMX40M DUAL MAGNETIC FIELD SENSOR DESCRIPTION This device is a special tangential field difference sensor with two AMR Anisotropic Magneto-Resistive bridges for field movement measurements or field comparative measurements. The ZMX40M contains two extremely sensitive magnetic

RS422 cable

Abstract: "external rotor" 12 poles Magnetic Field Sensor 021120 GCI0K RS422 track ferrit Magnet
Contextual Info: Special Encoders & Sensors Magnetic field sensor with pole wheel Rotary applications GCI0K Features – Magnetic field sensor rotary – Touchless sensing of angle – Resolution up to 4096 steps with 64 poles Magnetic ring / 16 times interpolation and external

magnetic sensor circuit diagram

Abstract: "Magnetic Field Sensor" KMZ10B MAGNETIC SENSOR static field KMZ10 magnetic sensor FXD100 SC17 Magnetic Field Sensor marking HX 6 pin
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET KM110B/2 Magnetic field sensor Preliminary specification File under Discrete Semiconductors, SC17 Philips Semiconductors November 1994 Philips Semiconductors Preliminary specification Magnetic field sensor KM110B/2 DESCRIPTION

Contextual Info: GF705 MagnetoResistive Magnetic Field Sensor The GF705 is a magnetic field sensor based on the multilayer Giant MagnetoResistive GMR effect. The Sensor contains a Wheatstone bridge with on-chip flux concentrators to improve the sensitivity. The sensor is ideal for measuring magnetic fields in a

hall 523

Contextual Info: 3501 LINEAR OUTPUT HALL EFFECT SENSORS Utilizing the Hall effect for sensing a magnetic field, UGN3501U and UGN3501UA integrated circuits provide a linear single-ended output that is a function of magnetic field intensity. These devices can sense relatively small changes in a magnetic

Contextual Info: GF708 MagnetoResistive Magnetic Field Sensor Preliminary data sheet The GF708 is a magnetic field sensor based on the Giant MagnetoResistive GMR effect. Its functional magnetic layer is pinned within a synthetic spin-valve connected as a Wheatstone bridge. With its on-chip flux concentrators an extremely large

KMZ50

Abstract: MS-012AA BP317 SC17 Wheatstone Bridge amplifier
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D315 KMZ50 Magnetic field sensor Preliminary specification Supersedes data of 1996 Nov 15 File under Discrete Semiconductors, SC17 1998 Mar 24 Philips Semiconductors Preliminary specification Magnetic field sensor KMZ50

KMZ10B

Contextual Info: Philips Components kmzwb _ A_ MAGNETIC FIELD SENSOR The KMZ10B is a sensitive magnetic field sensor employing the magneto-resistive effect o f thin film permalloy. Its properties enable this sensor to be used in a wide range o f applications fo r current and field

KMZ10

Contextual Info: Philips Semiconductors Product specification Magnetic field sensor KMZ10A1 DESCRIPTION The KMZ10A1 is an extremely sensitive magnetic field sensor, employing the magnetoresistive effect of thin-film permalloy. Its properties enable this sensor to be used in a

Contextual Info: MLX91205 IMC Current Sensor Triaxis Technology Features and Benefits Applications Examples Triaxis™ Hall Technology Sensitive to a magnetic field parallel to the chip surface Very high sensitivity Linear output voltage proportional to a magnetic field

Contextual Info: ULTRASENSITIVE BIPOLAR HALL-EFFECT SWITCHES These Hall-effect switches are designed for magnetic actuation using a bipolar magnetic field, i.e., a north-south alternating field. They combine extreme magnetic sensitivity with excellent stability over varying temperature and supply voltage. The high sensitivity permits

UGN 3235

Abstract: 3280E UGN3132LT 27631
Contextual Info: Data Sheet 27631.2B 3132 AND 3133 ULTRA-SENSITIVE BIPOLAR HALL-EFFECT SWITCHES X These Hall-effect switches are designed for magnetic actuation using a bipolar magnetic field, i.e., a north-south alternating field. They combine extreme magnetic sensitivity with excellent stability over

Contextual Info: Honeywell Magnetic Products ONE AND TWO AXIS MAGNETIC SENSORS HMC1001 HMC1002 FEATURES APPLICATIONS • Measures strength and direction of magnetic fields • Compassing • Medical Instruments • Detects change in magnetic field due to presence of ferromagnetic objects

Contextual Info: Philips Semiconductors Preliminary specification Magnetic field sensor KMZ41 DESCRIPTION The KMZ41 is a sensitive magnetic field sensor, employing the magnetoresistive effect of thin-film permalloy. The sensor contains two galvanic separated Wheatstone bridges. Its properties enable this sensor to

Contextual Info: Bulk Indium Arsenide BH-200 Series Hall Sensors Instrumentation Quality Description The BH-200 series of Hall effect magnetic field sensors consists of ten models designed to meet the requirements of most magnetic field measurement applications. Models in the BH-200

H0022B

Contextual Info: ULTRASENSITIVE BIPOLAR HALL-EFFECT SWITCHES These Hall-effect switches are designed for magnetic actuation using a bipolar magnetic field, i.e., a north-south alternating field. They combine extreme magnetic sensitivity with excellent stability over varying tem perature and supply voltage. The high sensitivity permits

HY MARKING SOT223

Abstract: Magnetoresistive Sensors zmy20m ZMY20M ZMY20MTA ZMY20MTC
Contextual Info: ZMY20M MAGNETIC FIELD SENSOR WITH INTERNAL MAGNET DESCRIPTION The ZMY20M is an extremely sensitive magnetic sensor employing the magneto-resistive effect of thin film permalloy. It allows the measurement of magnetic fields or the detection of magnetic parts. The highly sensitive and small size

AN00023

Abstract: KMZ41 AN00004 UZZ9000 UZZ9001 MGU175
Contextual Info: KMZ41 Magnetic field sensor Rev. 05 — 27 November 2006 Product data sheet 1. Product profile 1.1 General description The KMZ41 is a sensitive magnetic field sensor, employing the magneto-resistive effect of thin film permalloy. The sensor contains two galvanic separated Wheatstone bridges,

KMZ41

Abstract: Wheatstone Bridge
Contextual Info: KMZ41 Magnetic field sensor Rev. 6 — 18 November 2010 Product data sheet 1. Product profile 1.1 General description The KMZ41 is a sensitive magnetic field sensor, employing the magneto-resistive effect of thin film permalloy. The sensor contains two galvanically separated Wheatstone bridges,

HMC2003

Abstract: HMC2003 "pin compatible" HMC1002 HMC1001 magnetic transducer interface HMC2003 set reset
Contextual Info: 3-Axis Magnetic Sensor Hybrid HMC2003 The Honeywell HMC2003 is a high sensitivity, three-axis magnetic sensor hybrid assembly used to measure low magnetic field strengths. Honeywell’s most sensitive magneto-resistive sensors HMC1001 and HMC1002 are utilized to

lsm303dlh

Abstract: LSM303 LSM303DLHTR LSM303DLHT 3axis MEMS magnetometer 0011110b LGA-28 LSM303DL lsm303d
Contextual Info: LSM303DLH Sensor module: 3-axis accelerometer and 3-axis magnetometer Features • Analog supply voltage: 2.5 V to 3.3 V ■ Digital supply voltage IOs: 1.8 V ■ Power-down mode ■ 3 magnetic field channels and 3 acceleration channels ■ ±1.3 to ±8,1 gauss magnetic field full-scale

KMZ10A application note

Abstract: SOT195 KMZ10A
Contextual Info: Philips Components kmzioa A _ MAGNETIC FIELD SEN SO R The K M Z 1 0 A is an extremely sensitive magnetic field sensor employing the magneto-resistive effect of thin film permalloy. Its properties enable this sensor to be used in a wide range of applications for navigation, current and