MA4X160 Search Results

Contextual Info: Switching Diodes MA4X160 MA160 Silicon epitaxial planar type Unit: mm 2.90+0.02 –0.05 For high-speed switching circuits 1.9±0.2 0.16+0.1 –0.06 (0.95) (0.95) 2 Unit 40 V VRM 40 V Forward current Single IF(AV) 100 mA (Average) Series Repetitive peak Single

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA4X160A (MA160A) Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 For switching circuits 1.9±0.2 0.16+0.10 –0.06 (0.95) (0.95) VR Repetitive peak reverse voltage Forward current

marking M1D

Abstract: MA160 MA4X160
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA4X160 (MA160) Silicon epitaxial planar type Unit: mm 2.90+0.02 –0.05 For high-speed switching circuits 1.9±0.2 0.16+0.1 –0.06 M Di ain sc te on na tin nc ue e/ d (0.95) (0.95)

MA160A

Abstract: MA4X160A
Contextual Info: Switching Diodes MA4X160A MA160A Silicon epitaxial planar type Unit : mm For switching circuits + 0.2 2.8 − 0.3 + 0.25 0.65 ± 0.15 0.65 ± 0.15 + 0.1 • Features 0.4 − 0.05 1.45 1.5 − 0.05 0.5 0.95 Unit VR 80 V VRRM 80 V 2 0.4 − 0.05 0.8 + 0.1

MA160

Abstract: MA4X160 m1d 95
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA4X160 (MA160) Silicon epitaxial planar type Unit: mm 2.90+0.02 –0.05 For high-speed switching circuits 1.9±0.2 0.16+0.1 –0.06 (0.95) (0.95) 2 Rating Unit VR 40 V VRM 40

Contextual Info: Switching Diodes MA4X160A MA160A Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 For switching circuits 1.9±0.2 0.16+0.10 –0.06 (0.95) (0.95) 2 Unit 80 V VRRM 80 V IF(AV) 100 mA IFRM 225 IFSM 500 Double Double Double 1: Cathode 1 2: Anode 2 3: Cathode 2

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA4X160A (MA160A) Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 For switching circuits 1.9±0.2 0.16+0.10 –0.06 (0.95) (0.95) 2 Forward current (Average) Single Repetitive peak

MA160A

Abstract: MA4X160A
Contextual Info: Switching Diodes MA4X160A MA160A Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 For switching circuits 1.9±0.2 0.16+0.10 –0.06 (0.95) (0.95) 2 Forward current (Average) Single Repetitive peak forward current Single Unit 80 V VRRM 80 V IF(AV)

MA160A

Abstract: MA4X160A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA4X160A (MA160A) Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 For switching circuits 1.9±0.2 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d (0.95) (0.95) 0.40+0.10

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA4X160A (MA160A) Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 For switching circuits 1.9±0.2 0.16+0.10 –0.06 (0.95) (0.95) 2 Forward current (Average) Single Repetitive peak

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA4X160 (MA160) Silicon epitaxial planar type Unit: mm 2.90+0.02 –0.05 For high-speed switching circuits 1.9±0.2 0.16+0.1 –0.06 (0.95) (0.95) 2 Rating Unit VR 40 V VRM 40

MA4X160AG

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA4X160AG Silicon epitaxial planar type For switching circuits • Package • Two isolated elements contained in one package, allowing highdensity mounting • Centrosymmetrical wiring, allowing to free from the taping

MA160A

Abstract: MA4X160A
Contextual Info: Switching Diodes MA4X160A MA160A Silicon epitaxial planar type Unit : mm 2.90+0.02 –0.05 For switching circuits 1.9±0.2 0.16+0.1 –0.06 (0.95) (0.95) 4 2 5° 0.5R 2.8+0.2 –0.3 3 1 (0.65) (0.2) 0.60+0.10 –0.05 0.4±0.2 • Two isolated elements contained in one package, allowing highdensity mounting

MA160

Abstract: MA4X160
Contextual Info: Switching Diodes MA4X160 MA160 Silicon epitaxial planar type Unit: mm 2.90+0.02 –0.05 For high-speed switching circuits 1.9±0.2 0.16+0.1 –0.06 (0.95) (0.95) 2 0.4±0.2 (0.65) 0.60+0.10 –0.05 Rating Unit VR 40 V Maximum peak reverse voltage VRM 40

MA4X160A

Contextual Info: Switching Diodes MA4X160A Silicon epitaxial planar type Unit : mm For switching circuits + 0.2 2.8 − 0.3 + 0.25 0.65 ± 0.15 0.65 ± 0.15 + 0.1 • Features 0.4 − 0.05 1.45 1.5 − 0.05 Unit VR 80 V VRRM 80 V 0.95 0.5 0.4 − 0.05 2 + 0.1 0.16 − 0.06

panasonic m1d

Abstract: marking M1D MA4X1600G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA4X1600G Silicon epitaxial planar type For high-speed switching circuits • Package ■ Features • Code Mini4-G3 • Pin Name Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b

MA4X160AG

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA4X160AG Silicon epitaxial planar type M Di ain sc te on na tin nc ue e/ d For switching circuits • Package • Two isolated elements contained in one package, allowing highdensity mounting

panasonic m1d

Abstract: MA4X1600G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA4X1600G Silicon epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high-speed switching circuits • Package ■ Features • Code Mini4-G3 • Pin Name ue pl d in

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

k11 zener diode

Abstract: zener diode k11 diode k6 MA3DD82 MA2B150 MA3DF40 MA3DF30 MA2B171 MA21D350 MA3df3
Contextual Info: Diodes Switching Diodes. K2 Switching Diodes . K2

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and