MA4TD1110T Search Results

MA4TD1110T Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
MA4TD1110T		M-Pulse Microwave	Silicon Bipolar MMIC Cascadable Amplifier	Original	PDF	44.19KB	3

MA4TD1110T Datasheets Context Search

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MP4TD1110 Abstract: Gain Block diode gp 421 silicon bipolar transistor rf power amplifier MA4TD1110 MA4TD1110T Contextual Info: M-Pulse Microwave Silicon Bipolar MMIC Cascadable Amplifier MP4TD1110 Features • High Dynamic Range Cascadable 50Ω/75Ω Gain Block • 3dB Bandwidth: 50 MHz to 1.3 GHz • 17.0 dBm Typical P1dB @ 1.0 GHz • 12 dB Typical Gain @ 0.5 GHz • 3.8 dB Typical Noise Figure @ 1.0 GHz	Original	MP4TD1110 MP4TD1110 Gain Block diode gp 421 silicon bipolar transistor rf power amplifier MA4TD1110 MA4TD1110T	PDF

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MP4TD1110

Abstract: Gain Block diode gp 421 silicon bipolar transistor rf power amplifier MA4TD1110 MA4TD1110T
Contextual Info: M-Pulse Microwave Silicon Bipolar MMIC Cascadable Amplifier MP4TD1110 Features • High Dynamic Range Cascadable 50Ω/75Ω Gain Block • 3dB Bandwidth: 50 MHz to 1.3 GHz • 17.0 dBm Typical P1dB @ 1.0 GHz • 12 dB Typical Gain @ 0.5 GHz • 3.8 dB Typical Noise Figure @ 1.0 GHz

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MP4TD1110 MP4TD1110 Gain Block diode gp 421 silicon bipolar transistor rf power amplifier MA4TD1110 MA4TD1110T

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