MA48 Search Results

Contextual Info: MA4803D10000000 N-Ch and P-Ch 40V Fast Switching MOSFETs General Description Product Summery The MA4803D is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter

Contextual Info: MA48709B166 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.500f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage25 Q Factor Min. f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialGaAs Package StylePill-B Mounting StyleS

Contextual Info: MA48711C30 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.674f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage Q Factor Min. f(co) Min. (Hz) Cut-off freq.100G P(D) Max. (W) Semiconductor MaterialGaAs Package StylePin Mounting StyleS

Contextual Info: MA48711E30 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.674f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage Q Factor Min. f(co) Min. (Hz) Cut-off freq.100G P(D) Max. (W) Semiconductor MaterialGaAs Package StylePin Mounting StyleS

Contextual Info: MA48507E30 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.474f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage Q Factor Min. f(co) Min. (Hz) Cut-off freq.100G P(D) Max. (W) Semiconductor MaterialGaAs Package StylePin Mounting StyleS

Contextual Info: MA48707A168 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage25 Q Factor Min. f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialGaAs Package StylePin Mounting StyleS

Contextual Info: MA48703I30 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.274f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage Q Factor Min. f(co) Min. (Hz) Cut-off freq.250G P(D) Max. (W) Semiconductor MaterialGaAs Package StylePin Mounting StyleS

millimeter wave radar

Abstract: DIODE ED 92 GaAs Gunn Diode 24 GaAs impatt diode W band
Contextual Info: Afacm MA48700 Series GaAs Multiplier Varactors Features • HIGH CUTOFF FREQUENCY ■ OPERATING TEMPERATURES FROM - 65°C to + 200°C ■ GUARANTEED REPRODUCIBILITY Applications The MA48700 series of Gallium Arsenide Abrupt Junction Multiplier Varactors is specifically designed to provide

varactor diode capacitance measurement

Abstract: impatt diode Gunn diode GaAs Gunn Diode "94 GHz" radar gunn diode GaAs Gunn Diode impatt varactor diode high frequency GHz MA48700 Gunn Diode e band
Contextual Info: M/A-COM S E N ICOND tBRLNGTON 11 D • SbM22m ÜGG14DG M ■MIC A fiA s A y fi T - 0 7 - ii MA48700 Series GaAs Multiplier Varactors Features ■ HIGH CUTOFF FREQUENCY r ~\ ■ OPERATING TEMPERATURES FROM - 65°C to + 200°C ■ GUARANTEED REPRODUCIBILITY

gaas varactor diodes

Contextual Info: an A M P com pany GaAs Multiplier Varactors MA48700 Series V3.00 Features Case Styles • • See appendix for complete dimensions High Cutoff Frequency Operating Tem peratures From -65°C to +200°C Description The MA48700 series o f Gallium Arsenide Abrupt Junction

millimeter wave radar

Abstract: MA48700 ADVANCED TECHNICAL SOLUTIONS
Contextual Info: MA48700 Series M/A-COM Products GaAs Multiplier Varactors Features • • High Cutoff Frequency Operating Temperatures From -65°C to +200°C V4 Absolute Max Rating @ 25 °C Description The MA48700 series of Gallium Arsenide Abrupt Junction Multiplier Varactors is

Contextual Info: MA4803D10000000 N-Ch and P-Ch 40V Fast Switching MOSFETs Rating Symbol Parameter N-Ch P-Ch Units VDS Drain-Source Voltage 40 -40 V VGS Gate-Source Voltage TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D020210

Contextual Info: MA487 Linear ICs Fixed Positive Voltage Regulator status Military/High-RelN Output Voltage Nominal V 5.0 Load Current Max. (A)500m Tolerance (%)4.0 Drop-Out Volt Max.600m P(D) Max. (W) Supply Voltage Maximum (V)28 Minimum Operating Temp (øC)-45 Maximum Operating Temp (øC)155

millimeter wave radar

Abstract: varactor multiplier frequency multiplier X3 millimeter gunn diode IMPATT MA48701A
Contextual Info: MA48700 Series GaAs Multiplier Varactors Features • HIGH CUTOFF FREQUENCY ■ OPERATING TEMPERATURES FROM - 65°C to + 200°C ■ GUARANTEED REPRODUCIBILITY Applications The MA48700 series of Gallium Arsenide Abrupt Junction Multiplier Varactors is specifically designed to provide

rs485 modbus connection

Abstract: rs232 to rs422
Contextual Info: Book 1 Technical Support Reference RS Part No. 221-367 MA485F9 - Industry standard RS232 to RS422/485 converter with automatic turnaround Amplicon Part No. 90993233 • • • • • • Converts RS232 signals to RS422/485 compliant signals Ideal for converting RS232 to 2-wire RS485

Contextual Info: MA48708A36 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.400f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage25 Q Factor Min. f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialGaAs Package StylePin Mounting StyleS

Contextual Info: MA48711A30 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.674f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage Q Factor Min. f(co) Min. (Hz) Cut-off freq.100G P(D) Max. (W) Semiconductor MaterialGaAs Package StylePin Mounting StyleS

Contextual Info: MA48511D30 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.674f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage Q Factor Min. f(co) Min. (Hz) Cut-off freq.100G P(D) Max. (W) Semiconductor MaterialGaAs Package StylePin Mounting StyleS

Contextual Info: MA48503I30 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.274f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage Q Factor Min. f(co) Min. (Hz) Cut-off freq.250G P(D) Max. (W) Semiconductor MaterialGaAs Package StylePin Mounting StyleS

Contextual Info: MA48711D30 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.674f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage Q Factor Min. f(co) Min. (Hz) Cut-off freq.100G P(D) Max. (W) Semiconductor MaterialGaAs Package StylePin Mounting StyleS

ma4853

Abstract: MA4853M
Contextual Info: MA4853M MEDIUM BARRIER SCHOTTKY MATCHED PAIR DIODE PACKAGE STYLE 54 DESCRIPTION: The ASI MA4853M is a Silicon Schottky Mixer Matched pair Diode. Designed for use in Stripline and coaxial mixers and upconverters. FEATURES: • • High Reliability. Low Noise Figure.

Contextual Info: MA4883 MEDIUM BARRIER SCHOTTKY DIODE DESCRIPTION: PACKAGE STYLE 54 The ASI MA4883 is a Silicon Schottky Mixer Diode designed for use in Stripline and coaxial mixers and upconverters. FEATURES: • • High Reliability. Low Noise Figure. MAXIMUM RATINGS I 2.0 mA

Contextual Info: MA48503H30 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.274f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage Q Factor Min. f(co) Min. (Hz) Cut-off freq.250G P(D) Max. (W) Semiconductor MaterialGaAs Package StylePin Mounting StyleS

Contextual Info: MA48182-138 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power50m Frequency Min. (Hz)50G Frequency Max. (Hz)60G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage4.5 I(Oper.) Typ.(A) Oper. Current1.2 Semiconductor MaterialGaAs Package StyleScrew Mounting StyleT