MA42111 Search Results

Contextual Info: MA42111-511 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)20 I(C) Max. (A)125m Absolute Max. Power Diss. (W)750m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: MA42111-510 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)20 I(C) Max. (A)125m Absolute Max. Power Diss. (W)1.2 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: MA42111-509 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)20 I(C) Max. (A)125m Absolute Max. Power Diss. (W)450m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: M/A-COM SEMICONDtBRLNGTON 11 D m Silicon Low Noise Bipolar Transistors Sh42214 000144^ 1 • M I C ■ ■ MA42110 Series Description T -3i- Nominal fT - 5.5 GHz Nominal Current Range - 3 to 20 mA Iq Max. - 125 mA Frequency Range - 100 MHz to 1.5 GHz Geometry - 60

MA42111

Contextual Info: Silicon Low Noise Bipolar Transistors MA42110 Series Description Nominal fT - 5.5 GHz Nominal Current Range - 3 to 20 mA lç Max. - 125 mA Frequency Range - 100 MHz to 1.5 GHz Geometry - 60 The MA42110 series of silicon NPN bipolar transistors is designed to give a very low noise figure and wide dynamic

transistor K 2056

Abstract: MA42120 K 2056 transistor 2N6665 MA42001-509 2N5054 2n5651 MA42005 MA-42120 2N2857 Model
Contextual Info: /yfaom Silicon Low Noise Bipolar T ransistors Features • LOW NOISE THROUGH 2.5 GHz ■ HERMETIC PACKAGE ■ CAN BE SCREENED TO JAN, JANTX, JANTXV LEVELS Description The series of Silicon NPN bipolar transistors are designed for low noise amplifiers in the frequency range of 60 MHz

MA42181-510

Abstract: 2N5054 2N6665-509
Contextual Info: M a n A M P icom pany General Purpose Low Noise Bipolar Transistors V3.00 Case Styles Features • Low Noise Through 1.5 GHz • Hermetic Package • Can Be Screened to JAN, JANTX, JANTXV Levels Description The series of Silicon NPN bipolar transistors are designed

2N6665

Abstract: MA42001-509 2N6665-509 MA42181-510 2n5054 RF NPN POWER TRANSISTOR C 10-50 GHZ 2N2857 Model MA42001 ma42 transistor 2N3953
Contextual Info: an A M P com pany General Purpose Low Noise Bipolar Transistors Features Case Styles • Low Noise Through 1.5 GHz • Hermetic Package • Can Be Screened to JAN, JANTX, JANTXV Levels Description The series of Silicon NPN bipolar transistors are designed