MA402 Search Results

Schottky diode wafer

Contextual Info: Schottky Barrier Beam Lead Anti-Parallel Pairs MA40278, MA40279 Series V3.00 Case Style 942 Features ● ● ● ● ● ● Small Physical Size for Microstrip Mounting High Reliability Closely Matched Junctions Three Diode Barrier Heights are Available Minimum Parasitics for Broadband Designs

ma4140-m

Abstract: MA4140M MA3330 MA4047 MA4056 mm075 MA4051 MA4068(L)-T2 MA3240 MA3240L
Contextual Info: - •y « a /s. / t r e m #. B % tt £ P mW MA3240 M A3240L MA3270 MA3300 MA3330 fô T fô T 200 500 200 200 200 MA3360 MA4Q20 MA4022 MA 4024 MA4027 të fâ tô fô fô 200 370 370 370 370 fô T T T T T T (m A) Zztnax Vz (V ) Iz I z (m A) Wtlfic â ü æ

Silicon Detector

Abstract: 1202 transistor 3004 diode tangential ASI-DDC4563-24 ASI-MA40232-119 MA40232-119 detector diode 50TSS
Contextual Info: ASI-DDC4563-24 / ASI-MA40232-119 SILICON DETECTOR DIODE PACKAGE STYLE 207-001 DESCRIPTION: The MA40232-119 is a Zero Bias Silicon Schottky Barrier Detector Diode. MAXIMUM RATINGS O PDISS 200 mW @ TC = 25 C TJ -65 C to +150 C TSTG -65 C to +175 C O O O O CHARACTERISTICS

Contextual Info: MA40251 Diodes General Purpose UHF/MW Detector Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandL-X Test Freq9.3G Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. Minimum Figure of Merit @Power Level (test) (W)

Contextual Info: MA40268-276 Diodes General Purpose UHF/MW Detector Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage Band Test Freq16G Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. Minimum Figure of Merit @Power Level (test) (W)

Contextual Info: MA40258 Diodes General Purpose UHF/MW Detector Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandL-X Test Freq9.3G Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. Minimum Figure of Merit @Power Level (test) (W)

A4029

Abstract: A4027
Contextual Info: MA40270, MA40290, MA40130 Series Silicon Beam-Lead Schottky Barrier Diodes Low, Medium and High Barrier Mixer and Detector Diodes Features • PLANAR CONSTRUCTION SURFACE ORIENTED DIODE ■ EXTREMELY STRONG BEAM CONSTRUCTION ■ HIGH PROCESS UNIFORMITY ■ LOW NOISE FIGURE (MIXER DIODES)

Contextual Info: MA40278 and MA40279 Series Schottky Barrier Beam-Lead Anti-Parallel Pairs Features • SMALL PHYSICAL SIZE FOR MICROSTRIP MOUNTING ■ HIGH RELIABILITY ■ CLOSELY MATCHED JUNCTIONS ■ THREE DIODE BARRIER HEIGHTS ARE AVAILABLE ■ DEVICES 100% TESTED ■ MINIMUM PARASITICS FOR

Contextual Info: an A M P com pany Schottky Barrier Beam Lead Anti-Parallel Pairs MA40278, MA40279 Series V3.00 Features • • • • • • Case Style 942 Small Physical Size for Microstrip Mounting High Reliability Closely Matched Junctions Three Diode Barrier Heights are Available

Contextual Info: a n AM P com pany Schottky Barrier Beam Lead Anti-Parallel Pairs MA40278, MA40279 Series V3.00 Case Style 942 Features • • • • • • Small Physical Size for Microstrip M ounting High Reliability Closely M atched Junctions Three D iode Barrier Heights are Available

Contextual Info: MA40255 Diodes General Purpose UHF/MW Detector Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandKu Test Freq16G Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. Minimum Figure of Merit @Power Level (test) (W)

Contextual Info: MA40262 Diodes General Purpose UHF/MW Detector Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage Band Test Freq10G Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. Minimum Figure of Merit @Power Level (test) (W)

Contextual Info: MA40293 Diodes General Purpose UHF/MW Detector Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandL-X Test Freq10G Frequency Min. (Hz)1.0G Frequency Max. (Hz)12G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. Minimum Figure of Merit @Power Level (test) (W)

Contextual Info: MA40266 Diodes General Purpose UHF/MW Detector Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandKu Test Freq16G Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. Minimum Figure of Merit @Power Level (test) (W)

Contextual Info: an A M P com pany Schottky Barrier Beam Lead Anti-Parallel Pairs MA40278, MA40279 Series V 2.00 Case Style 942 Features • • • • • • Small Physical Size for Microstrip M ounting High Reliability Closely M atched Junctions Three D iode Barrier H eights are Available

MA40297

Contextual Info: MA40270, MA40290, MA40130 Series Silicon Beam-Lead Schottky B arrier Diodes Low, Medium and High Barrier Mixer and Detector Diodes Features • ISOPLANAR CONSTRUCTION BEAM STRENGTH EXCEEDS 10 GRAMS ■ PLANAR CONSTRUCTION (SURFACE ORIENTED DIODE) ■ EXTREMELY STRONG BEAM

MA40278

Contextual Info: M/A-COM SEMICOND t BRLNGTON 11 » • S h M E 2 m QQQ13QÔ 5 ■ M I C MA40278 and MA40279 Series Schottky Barrier Beam-Lead Anti-Parallel Pairs Features ■ SMALL PHYSICAL SIZE FOR MICROSTRIP MOUNTING ■ HIGH RELIABILITY ■ CLOSELY MATCHED JUNCTIONS ■ THREE DIODE BARRIER HEIGHTS ARE

MA4068

Abstract: MA3330 MA4140-M MA4100 MA4051 MA4030 MA4140M MA4051(M)-T2 ma4082 mm075
Contextual Info: - •y « a /s. / t r e m #. B % tt £ P mW MA3240 M A3240L MA3270 MA3300 MA3330 fô T fô T 200 500 200 200 200 MA3360 MA4Q20 MA4022 MA 4024 MA4027 të fâ tô fô fô 200 370 370 370 370 fô T T T T T T (m A) Zztnax Vz (V ) Iz I z (m A) Wtlfic â ü æ

Contextual Info: MA40201 Diodes General Purpose UHF/MW Detector Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandL-Ku Test Freq9.3G Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. Minimum Figure of Merit @Power Level (test) (W)

Contextual Info: MA40265 Diodes General Purpose UHF/MW Detector Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandKu Test Freq16G Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. Minimum Figure of Merit @Power Level (test) (W)

Contextual Info: MA40288 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandKu Test Freq Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)7.5 Maximum Conversion Loss (dB)

Contextual Info: MA40236 Diodes General Purpose UHF/MW Detector Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandL-X Test Freq6.7G Frequency Min. (Hz)1.0G Frequency Max. (Hz)12G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. Minimum Figure of Merit @Power Level (test) (W)

MA2560

Abstract: MA3330 MA1180 Panasonic MA1056 MA1033 ma4300 zener panasonic diode MA4020 MA8180 DIODE D29
Contextual Info: Diode # Zener Diodes Line-up Zener Voltage Vz V MA1000 Series DO-35 (D28) PD = SOOmW MA2000 Series DO-41 (D29) PD = 1W MA3000 Series Mini Type 3 pins (D12) P d = 500mW 1 .8 8 - 2.24 MA1020 MA4020 2 .0 8 - 2.45 MA 1022 MA4022 2 .2 8 - 2.70 MA1024 MA3024 MA4024

Contextual Info: MA40273 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandX Test Freq Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB) Maximum Conversion Loss (dB)