MA40 Search Results

diode cross reference

Abstract: schottky diode cross reference MV3110 AH513 AH761 AH512 impatt diode Gunn Diode AH370 DMK-6606
Contextual Info: CROS S R E F E R E N C E LIST MA/COM R E F . TC S REF. D E S C R IP T IO N MA40401 PACKAGED SCHOTTKY DIODE DH378 MA40402 PACKAGED SCHOTTKY DIODE DH379 MA40404 PACKAGED SCHOTTKY DIODE DH383 MA40404 PACKAGED SCHOTTKY DIODE DH384 MA40404 PACKAGED SCHOTTKY DIODE

MA40135

Abstract: MA40133 ma40131
Contextual Info: Silicon Beam Lead Schottky Barrier Diodes MA40130 Series V3.00 Features ● ● ● ● Case Style 965 Planar Construction Surface Oriented Diode Strong Beam Construction Low Noise Figure (Mixer Diodes) Low, Medium and High Barrier Diodes Available Description

MAB360

Abstract: mab100 MA4056 MA8051 MA4062 MA4062(H)-72 MA4100 MA4075N MA8027 MA4068(L)-Y
Contextual Info: Diodes # Zener Diodes MA4000 N Series (Low Noise, Low Operating Resistance) Zener Voltage V z(V ) 4.42- 4.90 4 .84- 5.38 5.32- 5.92 5.866.477.077.77- 6.53 7.14 7.83 8.63 8.57- 9.53 9.47- 9.85 10.45-11.56 11.43 -12.58 12.46-13.96 13.84 -15.51 15.38-17.08 16.94 -19.02

Schottky diode wafer

Contextual Info: Schottky Barrier Beam Lead Anti-Parallel Pairs MA40278, MA40279 Series V3.00 Case Style 942 Features ● ● ● ● ● ● Small Physical Size for Microstrip Mounting High Reliability Closely Matched Junctions Three Diode Barrier Heights are Available Minimum Parasitics for Broadband Designs

Contextual Info: MA4008K10000000 N-Ch 40V Fast Switching MOSFETs General Description Product Summery The MA4008K is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load

MAZ40270L

Abstract: MA4000 Series maz40390 MA4000 MAZ4000 MAZ4020 MAZ40200H MAZ40200L MAZ4022 MAZ40220H
Contextual Info: Zener Diodes MAZ4000 Series MA4000 Series Silicon planar type Unit: mm For stabilization of power supply • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance

cx406

Abstract: C-15 MA406
Contextual Info: CARDINAL COMPONENTS Surface Mount Crystal Series CX406 Fits Epson MA406 footprint. Part Numbering Example: CX406 Z - A1 B2 C2 200 - 3.579545 D18 - 3 CX406 Z A1* B2 C2 200 3.579545 D18 -3 SERIES ADDED FEATURES OPERATING TEMP. STABILITY TOLERANCE RESISTANCE FREQUENCY LOAD CAP.

ma4140-m

Abstract: MA4140M MA3330 MA4047 MA4056 mm075 MA4051 MA4068(L)-T2 MA3240 MA3240L
Contextual Info: - •y « a /s. / t r e m #. B % tt £ P mW MA3240 M A3240L MA3270 MA3300 MA3330 fô T fô T 200 500 200 200 200 MA3360 MA4Q20 MA4022 MA 4024 MA4027 të fâ tô fô fô 200 370 370 370 370 fô T T T T T T (m A) Zztnax Vz (V ) Iz I z (m A) Wtlfic â ü æ

Silicon Detector

Abstract: 1202 transistor 3004 diode tangential ASI-DDC4563-24 ASI-MA40232-119 MA40232-119 detector diode 50TSS
Contextual Info: ASI-DDC4563-24 / ASI-MA40232-119 SILICON DETECTOR DIODE PACKAGE STYLE 207-001 DESCRIPTION: The MA40232-119 is a Zero Bias Silicon Schottky Barrier Detector Diode. MAXIMUM RATINGS O PDISS 200 mW @ TC = 25 C TJ -65 C to +150 C TSTG -65 C to +175 C O O O O CHARACTERISTICS

Contextual Info: MA40251 Diodes General Purpose UHF/MW Detector Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandL-X Test Freq9.3G Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. Minimum Figure of Merit @Power Level (test) (W)

Contextual Info: MA40268-276 Diodes General Purpose UHF/MW Detector Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage Band Test Freq16G Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. Minimum Figure of Merit @Power Level (test) (W)

Contextual Info: MA40258 Diodes General Purpose UHF/MW Detector Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandL-X Test Freq9.3G Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. Minimum Figure of Merit @Power Level (test) (W)

Contextual Info: MA40172 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandX Test Freq9.4G Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.5 Maximum Conversion Loss (dB)

Contextual Info: MA40193 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage Band Test Freq9.4G Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)12 Maximum Conversion Loss (dB)

A4029

Abstract: A4027
Contextual Info: MA40270, MA40290, MA40130 Series Silicon Beam-Lead Schottky Barrier Diodes Low, Medium and High Barrier Mixer and Detector Diodes Features • PLANAR CONSTRUCTION SURFACE ORIENTED DIODE ■ EXTREMELY STRONG BEAM CONSTRUCTION ■ HIGH PROCESS UNIFORMITY ■ LOW NOISE FIGURE (MIXER DIODES)

MA40420

Abstract: schottky diodes Anti parallel
Contextual Info: MA40401/MA40422 Series GaAs Schottky Mixer Diodes Features • VERY LOW NOISE FIGURE X, W-BAND ■ LOW JUNCTION CAPACITANCE ■ LOW SERIES RESISTANCE ■ WIDE RANGE OF AVAILABLE PRODUCT Description This family of Gallium Arsenide Schottky diodes is fabri­

Contextual Info: MA40278 and MA40279 Series Schottky Barrier Beam-Lead Anti-Parallel Pairs Features • SMALL PHYSICAL SIZE FOR MICROSTRIP MOUNTING ■ HIGH RELIABILITY ■ CLOSELY MATCHED JUNCTIONS ■ THREE DIODE BARRIER HEIGHTS ARE AVAILABLE ■ DEVICES 100% TESTED ■ MINIMUM PARASITICS FOR

Contextual Info: Extract from the online catalog EEM-RS485-MA400 Order No.: 2901365 RS-485 JBUS/MODBUS communication module for EEM-MA400 Commercial data EAN 4 046356 Pack 1 pcs. Customs tariff 90303100

Contextual Info: Extract from the online catalog EEM-MKT-DRA Order No.: 2902078 DIN rail adapter for EEM-MA600 and EEM-MA400 energy meters Product notes WEEE/RoHS-compliant since: 2011-01-20 Commercial data

MA4000 Series

Abstract: MA4000 MAZ4000 MAZ4020 MAZ4020-H MAZ4020-L MAZ4022 MAZ4022-H MAZ4022-L
Contextual Info: Zener Diodes MAZ4000 Series MA4000 Series Silicon planar type Unit : mm For stabilization of power supply • Features 13.0 min. 2.3±0.3 0.2 max. 2.2±0.3 Colored band indicatesVz classification Anode 1st Band 2nd Band 3rd Band Symbol Rating Unit Average forward current

Contextual Info: an A M P com pany Schottky Barrier Beam Lead Anti-Parallel Pairs MA40278, MA40279 Series V3.00 Features • • • • • • Case Style 942 Small Physical Size for Microstrip Mounting High Reliability Closely Matched Junctions Three Diode Barrier Heights are Available

MA40S4S

Abstract: MA200D1-1 MA40S4R ma400a1 MA200A1 MA80A1 MA40MC10-1B MA40E8-2 MA40MF14-1B MA40E7S-1
Contextual Info: 传感器元件 05.05.30 超声波传感器 o 开放型 Directivity in sensitivity 0˚ 30˚ 30˚ 9.0±1.0 12.0±0.5 Case Plastic 2-ø1.2±0.1 −10 Attenuation (dB) ø16.0±0.5 60˚ −20 60˚ −30 10.0±0.3 MA40B8R 90˚ 90˚ ∗ : EIAJ Code : R or S in mm

MA40416-1010

Abstract: MA40404-119 MA40400 Ka Band Mixer mixer diodes MA40415 MA40419-1108 MA40403 MA40404 MA40408
Contextual Info: GaAs Schottky Mixer Diodes MA40400 Series V3.00 Features ● ● ● ● ● ● ● Case Styles Very Low Noise Figure from X through W-Band Low Junction Capacitance Low Series Resistance Wide Range of Available Product – Packaged Diodes – Chips – Beam Leads

Contextual Info: Extract from the online catalog EEM-MA400 Order No.: 2901364 Energy measurement device to measure electrical parameters in low voltage installations up to 500 V, acquisition of total harmonic