DIODE M4A
Abstract: surge 105 MA3X791
Contextual Info: Schottky Barrier Diodes SBD MA3X791 Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Single Average forward current Single Unit VR 30 V VRRM 30 V IFM 300 mA Series*2 1.45
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MA3X786E
Abstract: SC-59A
Contextual Info: Schottky Barrier Diodes SBD MA3X786E Silicon epitaxial planar type Unit : mm 2.8 Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Single Average forward current Single VR 30 V VRRM 30 V IFM 300 mA Double*2 1.45 0.95 + 0.1 + 0.1 0.16 − 0.06
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DIODE M4A
Abstract: Panasonic super a series MA3X791 MA791
Contextual Info: Schottky Barrier Diodes SBD MA3X791 (MA791) Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Single Average forward current Single Unit VR 30 V VRRM 30 V IFM 300 mA Series*2
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MA3X786E
Abstract: MA786WK SC-59A
Contextual Info: Schottky Barrier Diodes SBD MA3X786E (MA786WK) Silicon epitaxial planar type Unit : mm 2.8 Repetitive peak reverse voltage Peak forward current Single Average forward current Single VR 30 V VRRM 30 V IFM 300 mA Double*2 1.45 0.95 + 0.1 + 0.1 0.16 − 0.06
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diode m3y
Abstract: MA3X786D
Contextual Info: Schottky Barrier Diodes SBD MA3X786D Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 Unit VR 30 V VRRM 30 V 300 mA Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Single Average forward current Single IFM Double*2 1.45
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MA3X786D
Abstract: MA786WA
Contextual Info: Schottky Barrier Diodes SBD MA3X786D (MA786WA) Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 Repetitive peak reverse voltage Peak forward current Single Average forward current Single Unit VR 30 V VRRM 30 V IFM 300 mA Double*2 1.45 0.95 + 0.1
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