MA2H736 Search Results
MA2H736 Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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MA2H736 |
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Silicon epitaxial planar type | Original | 47.05KB | 2 | ||
MA2H736 |
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Diode | Original | 57.29KB | 3 | ||
MA2H736 |
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Silicon Epitaxial Planar Type Schottky Barrier Diode (SBD) | Original | 64.7KB | 3 |
MA2H736 Price and Stock
Panasonic Electronic Components MA2H73600L |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MA2H73600L | 1,500 |
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Get Quote |
MA2H736 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Schottky Barrier Diodes SBD MA2H736 Silicon epitaxial planar type 1.9±0.1 1.85±0.2 2 0.9±0.2 Unit: mm For high frequency rectification 8° 0.9±0.2 3.2±0.1 • IF(AV) = 1 A rectification is possible • Half New Mini-power package 3.8±0.2 • Features |
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MA2H736 | |
MA2H736Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2H736 Silicon epitaxial planar type 1.9±0.1 1.85±0.2 M Di ain sc te on na tin nc ue e/ d 2 0.9±0.2 Unit: mm For high frequency rectification 8° ue pl d in an c |
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2002/95/EC) MA2H736 MA2H736 | |
MA2H736
Abstract: mini-power package
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MA2H736 MA2H736 mini-power package | |
MA2H736
Abstract: diodes ir
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2002/95/EC) MA2H736 MA2H736 diodes ir | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2H736 Silicon epitaxial planar type 1.9±0.1 1.85±0.2 2 0.9±0.2 Unit: mm For high frequency rectification 8° 0.9±0.2 3.2±0.1 • Forward current (Average) IF(AV) = 1 A rectification is possible |
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2002/95/EC) MA2H736 | |
Contextual Info: Schottky Barrier Diodes SBD MA2H736 Silicon epitaxial planar type 1.9±0.1 1.85±0.2 2 0.9±0.2 Unit: mm For high frequency rectification 8° 0.9±0.2 3.2±0.1 • IF(AV) = 1 A rectification is possible • Half New Mini-power package 3.8±0.2 • Features |
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MA2H736 05onductor | |
Contextual Info: Schottky Barrier Diodes SBD MA2H736 Silicon epitaxial planar type 1.9±0.1 1.85±0.2 2 0.9±0.2 Unit: mm For high frequency rectification 8° 0.9±0.2 3.2±0.1 • Forward current (Average) IF(AV) = 1 A rectification is possible 3.8±0.2 • Features 1 ■ Absolute Maximum Ratings Ta = 25°C |
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MA2H736 | |
MA2H736Contextual Info: Schottky Barrier Diodes SBD MA2H736 Silicon epitaxial planar type 1.9±0.1 1.85±0.2 2 0.9±0.2 Unit: mm For high frequency rectification 8° 0.9±0.2 3.2±0.1 • IF(AV) = 1 A rectification is possible • Half New Mini-power package 3.8±0.2 • Features |
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MA2H736 MA2H736 | |
Contextual Info: MA111 Schottky Barrier Diodes SBD MA2H736 Silicon epitaxial planer type Unit : mm For high-frequency rectification 3.2±0.1 0 to 0.05 Small and thin half new mini-power package ● IF(AV)=1A rectification possible 1.9±0.1 ● 1.0±0.2 • Features 1 +0.1 |
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MA111 MA2H736 100mA | |
MA2H736Contextual Info: Schottky Barrier Diodes SBD MA2H736 Silicon epitaxial planar type Unit : mm For switching circuits 3.2 ± 0.1 1.0 ± 0.2 1.9 ± 0.1 • Features 0 to 0.05 • Small and thin Half New Mini-power package • Allowing to rectify under (IF(AV) = 1 A) condition |
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MA2H736 MA2H736 | |
2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
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responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE | |
MA7D52Contextual Info: Part Number List • Part Number List M Part No. C Part No. Page M Part No. MA2C700 MA2C700A (MA700) 11 MA3D749A (MA700A) 11 MA3D750 MA2C719 (MA719) 13 MA3D750A MA2C723 (MA723) 15 MA3D752 (C Part No.) Page M Part No. (C Part No.) (MA7D49A) 93 MA3X717 (MA717) |
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MA2C700 MA2C700A MA2C719 MA2C723 MA2D749 MA2D749A MA2D750 MA2D755 MA2D760 MA2H735 MA7D52 | |
2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
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XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928 | |
MA716
Abstract: MA7D50 ma741 MA10799
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MA10700) MA10701) MA10702) MA10703) MA10704) MA10705) MA10798) MA10799) MA4S713) MA6S718) MA716 MA7D50 ma741 MA10799 | |
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Contextual Info: Characteristics Quick Reference Guide • SBD for Power Electrical characteristics Ta = 25°C VRRM IF(AV) (V) (A) 30 30 Package Single-chip type VF max. (V) 20 5 0.47 MA3D798 10 3 0.47 MA3D799 TO-220D-B1 (2-pin) 1 40 45 5 50 3 1 TO-220D-A1 (3-pin) 0.55 3 |
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MA2D760 MA3D761 MA2D755 MA3D756 MA3D760 MA3U760 MA3D752 MA3D752A MA3D755 MA3U755 | |
mitsumi Switching Power Supply
Abstract: circuit diagram of buck boost inverter MM3203 MA2H73600 MA2H73600L RB160M-40 RB160M
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MM3203 mitsumi Switching Power Supply circuit diagram of buck boost inverter MA2H73600 MA2H73600L RB160M-40 RB160M | |
MM3203
Abstract: MA2H73600L MA2H73600 RB160M RB160 rb160m-40 3CCD tss122
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MM3203 -12-5V 500kHz CNTRL03V CNTRL02V MA2H73600L MA2H73600 RB160M RB160 rb160m-40 3CCD tss122 |