MA2DF31 Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Fast Recovery Diodes (FRD) MA2DF31 Silicon mesa type For high frequency rectification • Package  Super high speed switching characteristic: trr = 20 ns (typ.)  Low noise type  Code

MA2DF31

Contextual Info: Contribute to power loss with high speed trr and low VF 300V/5A Fast Recovery Diode MA2DF31 „ Overview MA2DF31 is the fast recovery diode suited for high voltage and high frequency rectification. With high speed trr and low VF characteristics by the new structure, this diode can reduce the power loss and offer

MA2DF31

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Fast Recovery Diodes (FRD) MA2DF31 Silicon mesa type For high frequency rectification • Package  Super high speed switching characteristic: trr = 20 ns (typ.)  Low noise type  Code

MA2DF31

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Fast Recovery Diodes (FRD) MA2DF31 Silicon mesa type For high frequency rectification • Package  Super high speed switching characteristic: trr = 20 ns (typ.)  Low noise type  Code

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

mip411

Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

MA3DF30

Abstract: MIP2F mip2fx MIP2KX PANASONIC SC107A IC 4026 internal structure MIP2K MA3DF46 ma3df46* ma3df30 MA2YD260G
Contextual Info: 2009 ver. 2 Diode Series %JPEF
4FSJFT Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and