MA260 Search Results

Contextual Info: MA2601S10000000 N-Ch and P-Ch Fast Switching MOSFETs General Description Product Summery The MA2601S is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Band Switching Diodes MA26077 Silicon epitaxial planar type For band switching Unit: mm • Features  Low forward dynamic resistance rf  Less voltage dependence of diode capacitance CD 3

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Band Switching Diodes MA26077 Silicon epitaxial planar type For band switching Unit: mm • Features  Low forward dynamic resistance rf  Less voltage dependence of diode capacitance CD 3

Contextual Info: MA2601S10000000 N-Ch and P-Ch Fast Switching MOSFETs Rating Symbol Parameter N-Ch P-Ch Units VDS Drain-Source Voltage 20 -20 V VGS Gate-Source Voltage TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D020210

Contextual Info: MA2607V10000000 N-Ch and P-Ch Fast Switching MOSFETs General Description Product Summery The MA2607V is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and

Contextual Info: MA2605S10000000 N-Ch and P-Ch Fast Switching MOSFETs General Description Product Summery The MA2605S is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and

MA26077

Contextual Info: Band Switching Diodes MA26077 Silicon epitaxial planar type For band switching Unit: mm • Features  Low forward dynamic resistance rf  Less voltage dependence of diode capacitance CD 3 0.60±0.05 1 0.39+0.01 −0.03 1.00±0.05 Rating Unit Reverse voltage

MA26077

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Band Switching Diodes MA26077 Silicon epitaxial planar type For band switching Unit: mm • Features  Low forward dynamic resistance rf  Less voltage dependence of diode capacitance CD 3

Contextual Info: MA2607C10000000 N-Ch and P-Ch Fast Switching MOSFETs Rating Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage N-Channel P-Channel 20 -20 Units V TXC CORPORATION , All Rights Reserved. 4 Rev A.01 D032610 4

Contextual Info: MA2607V10000000 N-Ch and P-Ch Fast Switching MOSFETs Rating Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage N-Channel P-Channel 20 -20 Units V TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D032610

Contextual Info: MA2602S10000000 N-Ch and P-Ch Fast Switching MOSFETs Rating Symbol Parameter N-Ch P-Ch Units VDS Drain-Source Voltage 20 -20 V VGS Gate-Source Voltage TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D020210

Contextual Info: MA2604V10000000 N-Ch and P-Ch Fast Switching MOSFETs Rating Symbol Parameter N-Channel P-Channel Units VDS Drain-Source Voltage 20 20 V VGS Gate-Source Voltage TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D032610

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Band Switching Diodes MA26077 Silicon epitaxial planar type For band switching Unit: mm • Features 3  Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit Reverse voltage VR 35 V Forward current

Contextual Info: MA2602S10000000 N-Ch and P-Ch Fast Switching MOSFETs General Description Product Summery The MA2602S is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and

Contextual Info: MA2605V10000000 N-Ch and P-Ch Fast Switching MOSFETs Rating N-Channel P-Channel Steady Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage 10s State 20 Steady 10s State -20 Units V TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D032610

Contextual Info: MA2605S10000000 N-Ch and P-Ch Fast Switching MOSFETs Rating Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage N-Channel P-Channel 20 -20 Units V TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D020210

Contextual Info: MA2608N80000000 N-Ch and P-Ch Fast Switching MOSFE Ts General Description Product Summery The MA2608N8 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and

Contextual Info: MA2607C10000000 N-Ch and P-Ch Fast Switching MOSFETs General Description Product Summery The MA2607C1 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and

Contextual Info: MA2605V10000000 N-Ch and P-Ch Fast Switching MOSFETs General Description Product Summery The MA2605V is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and

Contextual Info: MA2604V10000000 N-Ch and P-Ch Fast Switching MOSFETs General Description Product Summery The QM2604V is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and

MA26077

Abstract: MA260
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Band Switching Diodes MA26077 Silicon epitaxial planar type For band switching Unit: mm • Features 3 M Di ain sc te on na tin nc ue e/ d 2 1 Forward current Operating ambient temperature Storage temperature

Contextual Info: MA2606C10000000 N-Ch and P-Ch Fast Switching MOSFETs Rating Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage N-Channel P-Channel 20 -20 Units V TXC CORPORATION , All Rights Reserved. 4 Rev A.01 D032610 4

Contextual Info: MA2608N80000000 N-Ch and P-Ch Fast Switching MOSFE Ts Rating Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage N-Channel P-Channel 20 -20 Units V TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D020210

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the